III-V semiconductor

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H01L21/02241

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02241III-V semiconductor

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 12,009,213
- Issue date Jun 11, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-driven transition from insulator to conductor
- Patent number 11,923,245
- Issue date Mar 5, 2024
- Bowling Green State University
- Farida Selim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor structure and method of shaping
- Patent number 11,869,973
- Issue date Jan 9, 2024
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and fabrication method therefor
- Patent number 11,777,024
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,757,028
- Issue date Sep 12, 2023
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor layers
- Patent number 11,735,418
- Issue date Aug 22, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor layer
- Patent number 11,721,548
- Issue date Aug 8, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon rich nitride layer between a plurality of semiconductor layers
- Patent number 11,515,411
- Issue date Nov 29, 2022
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial III-N nanoribbon structures for device fabrication
- Patent number 11,437,255
- Issue date Sep 6, 2022
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,355,593
- Issue date Jun 7, 2022
- Toyoda Gosei Co., Ltd.
- Takatomi Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 11,276,574
- Issue date Mar 15, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light assisted platelet formation facilitating layer transfer from...
- Patent number 11,173,697
- Issue date Nov 16, 2021
- GlobalWafers Co., Ltd.
- Gang Wang
- B32 - LAYERED PRODUCTS
Information Patent Grant
Semiconductive device with mesa structure and method of fabricating...
- Patent number 11,177,377
- Issue date Nov 16, 2021
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-based passivation-assisted plasma etching of III-v semiconduc...
- Patent number 11,133,190
- Issue date Sep 28, 2021
- Lawrence Livermore National Security, LLC
- Sara E. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication with electrochemical apparatus
- Patent number 11,101,149
- Issue date Aug 24, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Andrew Joseph Kelly
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Heterostructure semiconductor device and manufacturing method
- Patent number 11,037,782
- Issue date Jun 15, 2021
- Comptek Solutions Oy
- Johnny Dahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,018,248
- Issue date May 25, 2021
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally off III nitride transistor
- Patent number 11,011,515
- Issue date May 18, 2021
- Texas Instruments Incorporated
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and fabrication method therefor
- Patent number 10,991,818
- Issue date Apr 27, 2021
- Rohm Co., Ltd.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation using preferential oxidation of the bulk substrate
- Patent number 10,978,562
- Issue date Apr 13, 2021
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure
- Patent number 10,923,581
- Issue date Feb 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET based junctionless wrap around structure
- Patent number 10,854,757
- Issue date Dec 1, 2020
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 10,840,098
- Issue date Nov 17, 2020
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V segmented finFET free of wafer bonding
- Patent number 10,833,158
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensing device for sensing minor charge variations
- Patent number 10,818,785
- Issue date Oct 27, 2020
- Ecole Polytechnique Federale de Lausanne (EPFL)
- Cem Alper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-rich NMOS transistor channels
- Patent number 10,818,793
- Issue date Oct 27, 2020
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,804,384
- Issue date Oct 13, 2020
- Rohm Co., Ltd.
- Kazuya Nagase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gate insulator for HEMT
- Patent number 10,796,917
- Issue date Oct 6, 2020
- Fujitsu Limited
- Shirou Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial control of oxygen vacancy doping and electrical conduct...
- Patent number 10,784,104
- Issue date Sep 22, 2020
- UChicago Argonne, LLC
- Jeffrey A. Eastman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240304447
- Publication date Sep 12, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLOGRAPHIC- AND OXYNITRIDE-BASED SURFACE
- Publication number 20240141519
- Publication date May 2, 2024
- The Regents of the University of Michigan
- Francesca Maria Toma
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230147426
- Publication date May 11, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230144369
- Publication date May 11, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Layers
- Publication number 20230135654
- Publication date May 4, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-DRIVEN TRANSITION FROM INSULATOR TO CONDUCTOR
- Publication number 20230101586
- Publication date Mar 30, 2023
- Bowling Green State University
- Farida Selim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE, AMPLIFIER, AND METHOD FOR MANUFACTUR...
- Publication number 20230037148
- Publication date Feb 2, 2023
- Fujitsu Limited
- Shirou OZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220416070
- Publication date Dec 29, 2022
- Samsung Electronics Co., Ltd.
- Junhyuk PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR
- Publication number 20220406949
- Publication date Dec 22, 2022
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20220157606
- Publication date May 19, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Layer
- Publication number 20220028689
- Publication date Jan 27, 2022
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20210217886
- Publication date Jul 15, 2021
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210183649
- Publication date Jun 17, 2021
- Comptek Solutions Oy
- Johnny DAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTIVE DEVICE WITH MESA STRUCTURE AND METHOD OF FABRICATING...
- Publication number 20210167198
- Publication date Jun 3, 2021
- UNITED MICROELECTRONICS CORP.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20210043456
- Publication date Feb 11, 2021
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL III-N NANORIBBON STRUCTURES FOR DEVICE FABRICATION
- Publication number 20200350184
- Publication date Nov 5, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20200273975
- Publication date Aug 27, 2020
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR DEVICES WITH SELECTIVE OXIDATION
- Publication number 20200235207
- Publication date Jul 23, 2020
- Tessera, Inc.
- Cheng-wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20200161133
- Publication date May 21, 2020
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
- Publication number 20200144375
- Publication date May 7, 2020
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20200098898
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben DOORNBOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEGMENTED FINFET FREE OF WAFER BONDING
- Publication number 20200006485
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V-SEGMENTED FINFET FREE OF WAFER BONDING
- Publication number 20190341452
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
- Publication number 20190244821
- Publication date Aug 8, 2019
- Fujitsu Limited
- Shirou OZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET BASED JUNCTIONLESS WRAP AROUND STRUCTURE
- Publication number 20190245098
- Publication date Aug 8, 2019
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20190207023
- Publication date Jul 4, 2019
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM-RICH NMOS TRANSISTOR CHANNELS
- Publication number 20190189794
- Publication date Jun 20, 2019
- Intel Corporation
- CHANDRA S. MOHAPATRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sensing Device for Sensing Minor Charge Variations
- Publication number 20190172937
- Publication date Jun 6, 2019
- ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Cem ALPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
- Publication number 20190165109
- Publication date May 30, 2019
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS

III-V semiconductor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride-based semiconductor device and method for manufacturing the...

Semiconductor power device and method for producing same

Light-driven transition from insulator to conductor

Nanowire transistor structure and method of shaping

Nitride semiconductor device and fabrication method therefor

Semiconductor device and method for manufacturing the same

Method for forming semiconductor layers

Method for forming semiconductor layer

Silicon rich nitride layer between a plurality of semiconductor layers

Epitaxial III-N nanoribbon structures for device fabrication

Semiconductor device

Semiconductor power device and method for producing same

Light assisted platelet formation facilitating layer transfer from...

Semiconductive device with mesa structure and method of fabricating...

Metal-based passivation-assisted plasma etching of III-v semiconduc...

Semiconductor fabrication with electrochemical apparatus

Heterostructure semiconductor device and manufacturing method

Semiconductor device and method for manufacturing the same

Normally off III nitride transistor

Nitride semiconductor device and fabrication method therefor

Device isolation using preferential oxidation of the bulk substrate

Method for forming semiconductor structure

FINFET based junctionless wrap around structure

Semiconductor power device and method for producing same

III-V segmented finFET free of wafer bonding

Sensing device for sensing minor charge variations

Indium-rich NMOS transistor channels

Semiconductor device and manufacturing method thereof

Method for manufacturing gate insulator for HEMT

Interfacial control of oxygen vacancy doping and electrical conduct...

Patents Applicationslast 30 patents

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

CRYSTALLOGRAPHIC- AND OXYNITRIDE-BASED SURFACE

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

Method for Forming Semiconductor Layers

LIGHT-DRIVEN TRANSITION FROM INSULATOR TO CONDUCTOR

COMPOUND SEMICONDUCTOR DEVICE, AMPLIFIER, AND METHOD FOR MANUFACTUR...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

DIODE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

Method for Forming Semiconductor Layer

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

HETEROSTRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTIVE DEVICE WITH MESA STRUCTURE AND METHOD OF FABRICATING...

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

EPITAXIAL III-N NANORIBBON STRUCTURES FOR DEVICE FABRICATION

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

III-V SEMICONDUCTOR DEVICES WITH SELECTIVE OXIDATION

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

III-V SEGMENTED FINFET FREE OF WAFER BONDING

III-V-SEGMENTED FINFET FREE OF WAFER BONDING

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

FINFET BASED JUNCTIONLESS WRAP AROUND STRUCTURE

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

INDIUM-RICH NMOS TRANSISTOR CHANNELS

Sensing Device for Sensing Minor Charge Variations

DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE