in a gaseous ambient using an oxygen or a water vapour

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H01L21/28211

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28211in a gaseous ambient using an oxygen or a water vapour

Industries

Patents Grantslast 30 patents

Information Patent Grant
Tuning threshold voltage through meta stable plasma treatment
- Patent number 12,148,620
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 12,113,128
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device including buried oxide layer
- Patent number 12,040,396
- Issue date Jul 16, 2024
- United Microelectronics Corp.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 11,711,917
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning threshold voltage through meta stable plasma treatment
- Patent number 11,688,606
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Jyun Wu
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,640,981
- Issue date May 2, 2023
- United Microelectronics Corp.
- Shin-Hung Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with doped gate dielectrics
- Patent number 11,605,537
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of thin oxide layer with amorphous silicon and oxidation
- Patent number 11,569,245
- Issue date Jan 31, 2023
- Applied Materials, Inc.
- Christopher S. Olsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 11,257,944
- Issue date Feb 22, 2022
- Rohm Co., Ltd.
- Shigenari Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning threshold voltage through meta stable plasma treatment
- Patent number 11,239,083
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor and fabrication method thereof
- Patent number 11,217,693
- Issue date Jan 4, 2022
- United Microelectronics Corp.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,145,733
- Issue date Oct 12, 2021
- United Microelectronics Corp.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,127,850
- Issue date Sep 21, 2021
- Rohm Co., Ltd.
- Yusuke Kubo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 11,114,452
- Issue date Sep 7, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 11,049,967
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,043,434
- Issue date Jun 22, 2021
- ABLIC INC.
- Hitomi Sakurai
- G01 - MEASURING TESTING
Information Patent Grant
PNA temperature monitoring method
- Patent number 10,978,360
- Issue date Apr 13, 2021
- Shanghai Huali Integrated Circuit Corporation
- Zhonghua Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 10,937,795
- Issue date Mar 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with doped gate dielectrics
- Patent number 10,930,495
- Issue date Feb 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device having a multi-thickness ga...
- Patent number 10,847,517
- Issue date Nov 24, 2020
- United Microelectronics Corp.
- Tsuo-Wen Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and manufacturing methods thereof
- Patent number 10,840,262
- Issue date Nov 17, 2020
- TOSHIBA MEMORY CORPORATION
- Hanae Ishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack reliability in vertical transport field effect transistors
- Patent number 10,833,172
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of super-junction power semiconductor device
- Patent number 10,811,502
- Issue date Oct 20, 2020
- NXP USA, INC.
- Vishnu Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices
- Patent number 10,797,160
- Issue date Oct 6, 2020
- Samsung Electronics Co., Ltd.
- Hyun-Jun Sim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a memory transistor into High-k, metal gate CMOS pro...
- Patent number 10,784,277
- Issue date Sep 22, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned spacerless thin film transistor
- Patent number 10,692,716
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned spacerless thin film transistor
- Patent number 10,679,847
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device or display device including the same
- Patent number 10,580,641
- Issue date Mar 3, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 10,580,708
- Issue date Mar 3, 2020
- ABLIC Inc.
- Hitomi Sakurai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TUNING THRESHOLD VOLTAGE THROUGH META STABLE PLASMA TREATMENT
- Publication number 20240387178
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING BURIED OXIDE LAYER
- Publication number 20240322036
- Publication date Sep 26, 2024
- UNITED MICROELECTRONICS CORP.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240120406
- Publication date Apr 11, 2024
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...
- Publication number 20230320089
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Threshold Voltage Through Meta Stable Plasma Treatment
- Publication number 20230282484
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Jyun Wu
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
GATE AND LOCOS DIELECTRICS GROWN USING LOCOS PROCESSING
- Publication number 20230245919
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mark Francis Arendt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING BURIED OXIDE LAYER
- Publication number 20230207692
- Publication date Jun 29, 2023
- UNITED MICROELECTRONICS CORP.
- Sheng-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230197827
- Publication date Jun 22, 2023
- RENESAS ELECTRONICS CORPORATION
- Zhichao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230140347
- Publication date May 4, 2023
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure and manufacturing method thereof
- Publication number 20220367653
- Publication date Nov 17, 2022
- UNITED MICROELECTRONICS CORP.
- Shin-Hung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Threshold Voltage Through Meta Stable Plasma Treatment
- Publication number 20220139712
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH OF THIN OXIDE LAYER WITH AMORPHOUS SILICON AND OXIDATION
- Publication number 20220130837
- Publication date Apr 28, 2022
- Applied Materials, Inc.
- Christopher S. Olsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...
- Publication number 20210375897
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...
- Publication number 20210280714
- Publication date Sep 9, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuits with Doped Gate Dielectrics
- Publication number 20210175076
- Publication date Jun 10, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20210167208
- Publication date Jun 3, 2021
- UNITED MICROELECTRONICS CORP.
- Chang-Po Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PNA Temperature Monitoring Method
- Publication number 20210028072
- Publication date Jan 28, 2021
- Shanghai Huali Integrated Circuit Corporation
- Zhonghua Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tuning Threshold Voltage Through Meta Stable Plasma Treatment
- Publication number 20200294805
- Publication date Sep 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE OR DISPLAY DEVICE INCLUDING THE SAME
- Publication number 20200227257
- Publication date Jul 16, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20200152529
- Publication date May 14, 2020
- ABLIC Inc.
- Hitomi SAKURAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...
- Publication number 20200144413
- Publication date May 7, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuits with Doped Gate Dielectrics
- Publication number 20200126789
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...
- Publication number 20200035695
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...
- Publication number 20200006365
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING A MULTI-THICKNESS GA...
- Publication number 20190312036
- Publication date Oct 10, 2019
- UNITED MICROELECTRONICS CORP.
- Tsuo-Wen Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SPACERLESS THIN FILM TRANSISTOR
- Publication number 20190280128
- Publication date Sep 12, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SPACERLESS THIN FILM TRANSISTOR
- Publication number 20190273165
- Publication date Sep 5, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20190237563
- Publication date Aug 1, 2019
- Samsung Electronics Co., Ltd.
- HYUN-JUN SIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20190198633
- Publication date Jun 27, 2019
- Vanguard International Semiconductor Corporation
- Shih-Chieh CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuits with Doped Gate Dielectrics
- Publication number 20190139759
- Publication date May 9, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS

in a gaseous ambient using an oxygen or a water vapour

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Tuning threshold voltage through meta stable plasma treatment

Seal method to integrate non-volatile memory (NVM) into logic or bi...

DMOS transistor having thick gate oxide and STI and method of fabri...

High voltage semiconductor device including buried oxide layer

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Tuning threshold voltage through meta stable plasma treatment

Semiconductor structure and manufacturing method thereof

Integrated circuits with doped gate dielectrics

Growth of thin oxide layer with amorphous silicon and oxidation

Semiconductor device and semiconductor device manufacturing method

Tuning threshold voltage through meta stable plasma treatment

Semiconductor transistor and fabrication method thereof

Method of manufacturing a semiconductor device

Semiconductor device

Seal method to integrate non-volatile memory (NVM) into logic or bi...

DMOS transistor having thick gate oxide and STI and method of fabri...

Method of manufacturing a semiconductor device

PNA temperature monitoring method

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Integrated circuits with doped gate dielectrics

Method for forming semiconductor device having a multi-thickness ga...

Memory device and manufacturing methods thereof

Gate stack reliability in vertical transport field effect transistors

Method of manufacture of super-junction power semiconductor device

Methods of fabricating semiconductor devices

Integration of a memory transistor into High-k, metal gate CMOS pro...

Self-aligned spacerless thin film transistor

Self-aligned spacerless thin film transistor

Semiconductor device or display device including the same

Method of manufacturing a semiconductor device and semiconductor de...

Patents Applicationslast 30 patents

TUNING THRESHOLD VOLTAGE THROUGH META STABLE PLASMA TREATMENT

HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING BURIED OXIDE LAYER

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...

Tuning Threshold Voltage Through Meta Stable Plasma Treatment

GATE AND LOCOS DIELECTRICS GROWN USING LOCOS PROCESSING

HIGH VOLTAGE SEMICONDUCTOR DEVICE INCLUDING BURIED OXIDE LAYER

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Semiconductor structure and manufacturing method thereof

Tuning Threshold Voltage Through Meta Stable Plasma Treatment

GROWTH OF THIN OXIDE LAYER WITH AMORPHOUS SILICON AND OXIDATION

SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...

DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...

Integrated Circuits with Doped Gate Dielectrics

SEMICONDUCTOR TRANSISTOR AND FABRICATION METHOD THEREOF

PNA Temperature Monitoring Method

Tuning Threshold Voltage Through Meta Stable Plasma Treatment

SEMICONDUCTOR DEVICE OR DISPLAY DEVICE INCLUDING THE SAME

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

DMOS TRANSISTOR HAVING THICK GATE OXIDE AND STI AND METHOD OF FABRI...

Integrated Circuits with Doped Gate Dielectrics

SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...

SEAL METHOD TO INTEGRATE NON-VOLATILE MEMORY (NVM) INTO LOGIC OR BI...

METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING A MULTI-THICKNESS GA...

SELF-ALIGNED SPACERLESS THIN FILM TRANSISTOR

SELF-ALIGNED SPACERLESS THIN FILM TRANSISTOR

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Integrated Circuits with Doped Gate Dielectrics