in combination with diodes, or capacitors or resistors

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H01L27/0727

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/0727in combination with diodes, or capacitors or resistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Substrate-less vertical diode integrated circuit structures
- Patent number 12,154,898
- Issue date Nov 26, 2024
- Intel Corporation
- Avyaya Jayanthinarasimham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including inner conductive layer having region...
- Patent number 12,125,823
- Issue date Oct 22, 2024
- Denso Corporation
- Shingo Tsuchimochi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,094,944
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures of stacked devices and methods of forming the same
- Patent number 12,094,869
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including discharging path and methods o...
- Patent number 12,087,669
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,707
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting insulated gate power semiconductor device having...
- Patent number 12,068,312
- Issue date Aug 20, 2024
- HITACHI ENERGY LTD
- Charalampos Papadopoulos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated transistor and resistor-diode-capacitor snubber
- Patent number 12,051,967
- Issue date Jul 30, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Dean E. Probst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gated field effect transistor structure having shielded s...
- Patent number 12,027,622
- Issue date Jul 2, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Xiaoli Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit
- Patent number 12,015,062
- Issue date Jun 18, 2024
- Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V.
- Maciej Cwiklinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,009,360
- Issue date Jun 11, 2024
- Mitsubishi Electric Corporation
- Munenori Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting semiconductor device and method for manufacturin...
- Patent number 12,002,806
- Issue date Jun 4, 2024
- Mitsubishi Electric Corporation
- Koichi Nishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits with dual polarization transistors and metho...
- Patent number 11,990,541
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a Schottky diode with a MOSFET
- Patent number 11,984,497
- Issue date May 14, 2024
- II-VI ADVANCED MATERIALS, LLC
- Nicolas Thierry-Jebali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,956,959
- Issue date Apr 9, 2024
- Kioxia Corporation
- Jun Fujiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super CMOS devices on a microelectronics system
- Patent number 11,955,476
- Issue date Apr 9, 2024
- SCHOTTKY LSI, INC.
- Augustine Wei-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with an auxiliary gate structure
- Patent number 11,955,478
- Issue date Apr 9, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Martin Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit with edge structure to decrease le...
- Patent number 11,948,937
- Issue date Apr 2, 2024
- Fuji Electric Co., Ltd.
- Yoshiaki Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module circuit structure
- Patent number 11,923,266
- Issue date Mar 5, 2024
- Fuji Electric Co., Ltd.
- Makoto Isozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module
- Patent number 11,894,280
- Issue date Feb 6, 2024
- Fuji Electric Co., Ltd.
- Yoshiaki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode including a plurality of trenches
- Patent number 11,869,985
- Issue date Jan 9, 2024
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AC coupling modules for bias ladders
- Patent number 11,870,431
- Issue date Jan 9, 2024
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide field trench (OFT) diode control device
- Patent number 11,869,959
- Issue date Jan 9, 2024
- STMicroelectronics (Tours) SAS
- Frederic Gautier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a bidirectional switch and discharge ci...
- Patent number 11,862,630
- Issue date Jan 2, 2024
- Infineon Technologies Austria AG
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverter
- Patent number 11,837,523
- Issue date Dec 5, 2023
- Tesla, Inc.
- Wenjun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate IGBT with carrier trap under the control electrode
- Patent number 11,824,056
- Issue date Nov 21, 2023
- Kabushiki Kaisha Toshiba
- Ryohei Gejo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple independent gates
- Patent number 11,824,523
- Issue date Nov 21, 2023
- Vishay SIliconix, LLC
- Sanjay Havanur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,817,495
- Issue date Nov 14, 2023
- Fuji Electric Co., Ltd.
- Tetsutaro Imagawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240395806
- Publication date Nov 28, 2024
- Mitsubishi Electric Corporation
- Kakeru OTSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240387713
- Publication date Nov 21, 2024
- Fuji Electric Co., Ltd.
- Masayuki MOMOSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371860
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240339330
- Publication date Oct 10, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE INCLUDING A DIODE AREA
- Publication number 20240332407
- Publication date Oct 3, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240321871
- Publication date Sep 26, 2024
- Kabushiki Kaisha Toshiba
- Kazuki MINAMIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20240321986
- Publication date Sep 26, 2024
- MITSUBISHI ELECTRIC CORPORATION
- Kazunari Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240274698
- Publication date Aug 15, 2024
- Fuji Electric Co., Ltd.
- Misaki UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC ELEMENT AND CIRCUIT DEVICE
- Publication number 20240258307
- Publication date Aug 1, 2024
- Murata Manufacturing Co., Ltd.
- Takaaki MIYASAKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240258306
- Publication date Aug 1, 2024
- Mitsubishi Electric Corporation
- Munenori IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240243169
- Publication date Jul 18, 2024
- Fuji Electric Co., Ltd.
- Tohru SHIRAKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT
- Publication number 20240234414
- Publication date Jul 11, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240234554
- Publication date Jul 11, 2024
- Fuji Electric Co., Ltd.
- Naoki MITAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING LATERAL INSULATED-GATE BIPOLAR TRANSISTOR
- Publication number 20240222478
- Publication date Jul 4, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Sen ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240203830
- Publication date Jun 20, 2024
- Mitsubishi Electric Corporation
- Masanori TSUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT
- Publication number 20240136353
- Publication date Apr 25, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MOSFET REGION AND DIODE REGION AND M...
- Publication number 20240128260
- Publication date Apr 18, 2024
- DB HiTek Co., Ltd.
- Seung Hyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE INCLUDING A TRENCH ELECTRODE SUBDIVIDED INTO AT LEAST FIRST A...
- Publication number 20240088304
- Publication date Mar 14, 2024
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240072045
- Publication date Feb 29, 2024
- DENSO CORPORATION
- Keita FUKUTANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240072162
- Publication date Feb 29, 2024
- Fuji Electric Co., Ltd.
- Tetsutaro IMAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTER
- Publication number 20240063084
- Publication date Feb 22, 2024
- Tesla, Inc.
- Wenjun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AC Coupling Modules for Bias Ladders
- Publication number 20240063785
- Publication date Feb 22, 2024
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20240055506
- Publication date Feb 15, 2024
- Fuji Electric Co., Ltd.
- Takashi YOSHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, RECTIFYING ELEMENT USING SAME, AND ALTERNATOR
- Publication number 20240055423
- Publication date Feb 15, 2024
- HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- Masaki SHIRAISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240030217
- Publication date Jan 25, 2024
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240021607
- Publication date Jan 18, 2024
- Fuji Electric Co., Ltd.
- Tomoyuki OBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT RECEPTION DEVICE AND DISTANCE MEASURING DEVICE
- Publication number 20240012150
- Publication date Jan 11, 2024
- Sony Semiconductor Solutions Corporation
- YASUNORI TSUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230378164
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361111
- Publication date Nov 9, 2023
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE PN JUNCTION DIODE
- Publication number 20230361117
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS

in combination with diodes, or capacitors or resistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Substrate-less vertical diode integrated circuit structures

Semiconductor device including inner conductive layer having region...

Transistor circuits including fringeless transistors and method of...

Diode structures of stacked devices and methods of forming the same

Integrated circuit devices including discharging path and methods o...

Semiconductor device

Reverse conducting insulated gate power semiconductor device having...

Integrated transistor and resistor-diode-capacitor snubber

Insulated gated field effect transistor structure having shielded s...

Integrated circuit

Semiconductor device and method for manufacturing the same

Reverse conducting semiconductor device and method for manufacturin...

Apparatus and circuits with dual polarization transistors and metho...

Integration of a Schottky diode with a MOSFET

Semiconductor memory device and method for manufacturing same

Super CMOS devices on a microelectronics system

Power semiconductor device with an auxiliary gate structure

Semiconductor integrated circuit with edge structure to decrease le...

Semiconductor module circuit structure

Semiconductor module

Diode including a plurality of trenches

AC coupling modules for bias ladders

Oxide field trench (OFT) diode control device

Semiconductor device having a bidirectional switch and discharge ci...

Diode structure of a power semiconductor device

Power semiconductor device having overvoltage protection and method...

Inverter

Trench gate IGBT with carrier trap under the control electrode

Semiconductor device with multiple independent gates

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE INCLUDING A DIODE AREA

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND POWER CONVERTER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

ELECTRONIC ELEMENT AND CIRCUIT DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT

SEMICONDUCTOR DEVICE

REVERSE CONDUCTING LATERAL INSULATED-GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE

RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT

SEMICONDUCTOR DEVICE INCLUDING MOSFET REGION AND DIODE REGION AND M...

DIODE INCLUDING A TRENCH ELECTRODE SUBDIVIDED INTO AT LEAST FIRST A...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INVERTER

AC Coupling Modules for Bias Ladders

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, RECTIFYING ELEMENT USING SAME, AND ALTERNATOR

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

LIGHT RECEPTION DEVICE AND DISTANCE MEASURING DEVICE

DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE

BACKSIDE PN JUNCTION DIODE