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H01L29/225

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/225in different semiconductor regions

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Heterostructure of an electronic circuit having a semiconductor device
- Patent number 12,094,964
- Issue date Sep 17, 2024
- NaMLab gGmbH
- Stefan Schmult
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical heterostructure semiconductor memory cell and methods for...
- Patent number 11,956,940
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction material and method of preparing the same
- Patent number 11,735,417
- Issue date Aug 22, 2023
- Research & Business Foundation Sungkyunkwan University
- Taesung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure of an electronic circuit having a semiconductor device
- Patent number 11,699,749
- Issue date Jul 11, 2023
- NaMLab gGmbH
- Stefan Schmult
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure oxide semiconductor vertical gate-all-around (VGAA)...
- Patent number 11,672,110
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical heterostructure semiconductor memory cell and methods for...
- Patent number 11,569,244
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization-induced 2D hole gases for high-voltage p-channel trans...
- Patent number 11,158,709
- Issue date Oct 26, 2021
- Cornell University
- Reet Chaudhuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanoparticle, semiconductor nanoparticle-containing d...
- Patent number 11,133,382
- Issue date Sep 28, 2021
- FUJIFILM Corporation
- Tsutomu Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coated semiconductor nanocrystals and products including same
- Patent number 10,734,546
- Issue date Aug 4, 2020
- Samsung Electronics Co., Ltd.
- Craig Breen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-activated compositions and methods using the same
- Patent number 10,548,979
- Issue date Feb 4, 2020
- The Regents of the University of Colorado, a Body Corporate
- Prashant Nagpal
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-heterojunction nanoparticles, methods of manufacture thereof...
- Patent number 10,510,924
- Issue date Dec 17, 2019
- The Board of Trustees of the University of Illinois
- Moonsub Shim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Complementary metal-oxide semiconductor (CMOS) integration with com...
- Patent number 10,431,581
- Issue date Oct 1, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-activated compositions and methods using the same
- Patent number 10,383,939
- Issue date Aug 20, 2019
- The Regents of the University of Colorado, a Body Corporate
- Prashant Nagpal
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Metallic contact for optoelectronic semiconductor device
- Patent number 10,347,793
- Issue date Jul 9, 2019
- Sensor Electronic Technology, Inc.
- Alexander Lunev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material having a compositionally-graded transition l...
- Patent number 10,177,229
- Issue date Jan 8, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxide thin film transistor, array substrate and display device
- Patent number 10,141,449
- Issue date Nov 27, 2018
- BOE Technology Group Co., Ltd.
- Meili Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for coating semiconductor nanocrystals
- Patent number 10,096,678
- Issue date Oct 9, 2018
- Samsung Electronics Co., Ltd.
- Craig Breen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit die having reduced defect group III-nitride laye...
- Patent number 9,922,826
- Issue date Mar 20, 2018
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a sensor including a core-shell nanostructure
- Patent number 9,772,301
- Issue date Sep 26, 2017
- Inha-Industry Partnership Institute
- Sang Sub Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electronic device having carbon layer and method for manufacturing...
- Patent number 9,666,673
- Issue date May 30, 2017
- SNU R&DB Foundation
- Gyuchul Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and semiconductor device
- Patent number 9,613,961
- Issue date Apr 4, 2017
- Kabushiki Kaisha Toshiba
- Yoshiki Kamata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum rod and method of fabricating the same
- Patent number 9,543,394
- Issue date Jan 10, 2017
- LG Display Co., Ltd.
- Kyung-Seok Jeong
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunneling field effect transistor having a three-side source and fa...
- Patent number 9,490,363
- Issue date Nov 8, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with compositionally-graded transition layer
- Patent number 9,461,119
- Issue date Oct 4, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor nanocrystals and compositions and devices including same
- Patent number 9,444,008
- Issue date Sep 13, 2016
- QD Vision, Inc.
- Dorai Ramprasad
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-nitride based semiconductor structure
- Patent number 9,437,687
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride devices with discontinuously graded transition layer
- Patent number 9,437,686
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Devices comprising coated semiconductor nanocrystal heterostructures
- Patent number 9,410,959
- Issue date Aug 9, 2016
- Massachusetts Institute of Technology
- Sungjee Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for forming nanocrystals with position-controlled dopants
- Patent number 9,406,759
- Issue date Aug 2, 2016
- University of Florida Research Foundation, Inc.
- Y. Charles Cao
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Normally-off gallium nitride-based semiconductor devices
- Patent number 9,385,199
- Issue date Jul 5, 2016
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL HETEROSTRUCTURE SEMICONDUCTOR MEMORY CELL AND METHODS FOR...
- Publication number 20240215217
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben DOORNBOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructure of an Electronic Circuit Having a Semiconductor Device
- Publication number 20230327012
- Publication date Oct 12, 2023
- NaMLab gGmbH
- Stefan SCHMULT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE OXIDE SEMICONDUCTOR VERTICAL GATE-ALL-AROUND (VGAA)...
- Publication number 20230262953
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HETEROSTRUCTURE SEMICONDUCTOR MEMORY CELL AND METHODS FOR...
- Publication number 20230171937
- Publication date Jun 1, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben DOORNBOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE OXIDE SEMICONDUCTOR VERTICAL GATE-ALL-AROUND (VGAA)...
- Publication number 20210376157
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION METERIAL AND METHOD OF PREPARING THE SAME
- Publication number 20210366708
- Publication date Nov 25, 2021
- Research & Business Foundation Sungkyunkwan University
- Taesung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20200243651
- Publication date Jul 30, 2020
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR NANOPARTICLE, SEMICONDUCTOR NANOPARTICLE-CONTAINING D...
- Publication number 20200052068
- Publication date Feb 13, 2020
- FUJIFILM CORPORATION
- Tsutomu SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructure of an Electronic Circuit Having a Semiconductor Device
- Publication number 20200020790
- Publication date Jan 16, 2020
- NaMLab gGmbH
- Stefan SCHMULT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20190229190
- Publication date Jul 25, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Application
Gallium nitride materials and methods
- Publication number 20190214468
- Publication date Jul 11, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR POWER AMPLIFIER WITH BACKSIDE THE...
- Publication number 20180211897
- Publication date Jul 26, 2018
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE LAYE...
- Publication number 20170352532
- Publication date Dec 7, 2017
- Intel Corporation
- SANSAPTAK DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
- Publication number 20170117416
- Publication date Apr 27, 2017
- BOE TECHNOLOGY GROUP CO., LTD.
- Meili WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20160197076
- Publication date Jul 7, 2016
- KABUSHIKA KAISHA TOSHIBA
- Yoshiki KAMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM ROD AND METHOD OF FABRICATING THE SAME
- Publication number 20160087047
- Publication date Mar 24, 2016
- LG Display Co., Ltd.
- Kyung-Seok Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF...
- Publication number 20150364645
- Publication date Dec 17, 2015
- Rohm and Haas Electronic Materials, LLC
- Moonsub Shim
- B82 - NANO-TECHNOLOGY
Information Patent Application
SENSOR INCLUDING CORE-SHELL NANOSTRUCTURE, AND METHOD FOR PRODUCING...
- Publication number 20150300980
- Publication date Oct 22, 2015
- INHA-INDUSTRY PARTNERSHIP INSTITUTE
- Sang Sub KIM
- G01 - MEASURING TESTING
Information Patent Application
Synthesis of CdSe/ZnS Core/Shell Semiconductor Nanowires
- Publication number 20150028288
- Publication date Jan 29, 2015
- US Nano LLC
- Anthony C. Onicha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR COATING SEMICONDUCTOR NANOCRYSTALS
- Publication number 20150021551
- Publication date Jan 22, 2015
- QD VISION, INC.
- CRAIG BREEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR COATING SEMICONDUCTOR NANOCRYSTALS
- Publication number 20150014629
- Publication date Jan 15, 2015
- QD VISION, INC.
- CRAIG BREEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
THIN-FILM HYBRID COMPLEMENTARY CIRCUITS
- Publication number 20140361303
- Publication date Dec 11, 2014
- Tze-Chiang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
THIN-FILM HYBRID COMPLEMENTARY CIRCUITS
- Publication number 20140361350
- Publication date Dec 11, 2014
- International Business Machines Corporation
- Tze-Chiang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Gallium Nitride Semiconductor Structures With Compositionally-Grade...
- Publication number 20140353680
- Publication date Dec 4, 2014
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME
- Publication number 20140312300
- Publication date Oct 23, 2014
- QD VISION, INC.
- Dorai RAMPRASAD
- B82 - NANO-TECHNOLOGY
Information Patent Application
NORMALLY-OFF GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICES
- Publication number 20140312358
- Publication date Oct 23, 2014
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OBTAINING A HETEROGENEOUS SUBSTRATE FOR THE PRODUCTION O...
- Publication number 20140306268
- Publication date Oct 16, 2014
- Abdenacer Ait-Mani
- G02 - OPTICS
Information Patent Application
HETEROGENEOUS INTERGRATION OF GROUP III-V OR II-VI MATERIALS WITH S...
- Publication number 20140299872
- Publication date Oct 9, 2014
- Isis Innovation Limited
- Peter Wilshaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING A WAFER FOR AN ELECTRONIC CIRCUIT
- Publication number 20140291815
- Publication date Oct 2, 2014
- Isis Innovation Limited
- Peter Wilshaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF...
- Publication number 20140264258
- Publication date Sep 18, 2014
- Moonsub Shim
- B82 - NANO-TECHNOLOGY

in different semiconductor regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Heterostructure of an electronic circuit having a semiconductor device

Vertical heterostructure semiconductor memory cell and methods for...

Heterojunction material and method of preparing the same

Heterostructure of an electronic circuit having a semiconductor device

Heterostructure oxide semiconductor vertical gate-all-around (VGAA)...

Vertical heterostructure semiconductor memory cell and methods for...

Polarization-induced 2D hole gases for high-voltage p-channel trans...

Semiconductor nanoparticle, semiconductor nanoparticle-containing d...

Coated semiconductor nanocrystals and products including same

Light-activated compositions and methods using the same

Multi-heterojunction nanoparticles, methods of manufacture thereof...

Complementary metal-oxide semiconductor (CMOS) integration with com...

Light-activated compositions and methods using the same

Metallic contact for optoelectronic semiconductor device

Semiconductor material having a compositionally-graded transition l...

Oxide thin film transistor, array substrate and display device

Methods for coating semiconductor nanocrystals

Integrated circuit die having reduced defect group III-nitride laye...

Method for producing a sensor including a core-shell nanostructure

Electronic device having carbon layer and method for manufacturing...

Field-effect transistor and semiconductor device

Quantum rod and method of fabricating the same

Tunneling field effect transistor having a three-side source and fa...

Semiconductor structure with compositionally-graded transition layer

Semiconductor nanocrystals and compositions and devices including same

III-nitride based semiconductor structure

Gallium nitride devices with discontinuously graded transition layer

Devices comprising coated semiconductor nanocrystal heterostructures

Methods for forming nanocrystals with position-controlled dopants

Normally-off gallium nitride-based semiconductor devices

Patents Applicationslast 30 patents

VERTICAL HETEROSTRUCTURE SEMICONDUCTOR MEMORY CELL AND METHODS FOR...

Heterostructure of an Electronic Circuit Having a Semiconductor Device

HETEROSTRUCTURE OXIDE SEMICONDUCTOR VERTICAL GATE-ALL-AROUND (VGAA)...

VERTICAL HETEROSTRUCTURE SEMICONDUCTOR MEMORY CELL AND METHODS FOR...

HETEROSTRUCTURE OXIDE SEMICONDUCTOR VERTICAL GATE-ALL-AROUND (VGAA)...

HETEROJUNCTION METERIAL AND METHOD OF PREPARING THE SAME

GALLIUM NITRIDE MATERIALS AND METHODS

SEMICONDUCTOR NANOPARTICLE, SEMICONDUCTOR NANOPARTICLE-CONTAINING D...

Heterostructure of an Electronic Circuit Having a Semiconductor Device

GALLIUM NITRIDE MATERIALS AND METHODS

Gallium nitride materials and methods

HETEROJUNCTION BIPOLAR TRANSISTOR POWER AMPLIFIER WITH BACKSIDE THE...

INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE LAYE...

OXIDE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE

FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE

QUANTUM ROD AND METHOD OF FABRICATING THE SAME

MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF...

SENSOR INCLUDING CORE-SHELL NANOSTRUCTURE, AND METHOD FOR PRODUCING...

Synthesis of CdSe/ZnS Core/Shell Semiconductor Nanowires

METHODS FOR COATING SEMICONDUCTOR NANOCRYSTALS

METHODS FOR COATING SEMICONDUCTOR NANOCRYSTALS

THIN-FILM HYBRID COMPLEMENTARY CIRCUITS

THIN-FILM HYBRID COMPLEMENTARY CIRCUITS

Gallium Nitride Semiconductor Structures With Compositionally-Grade...

SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME

NORMALLY-OFF GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICES

METHOD FOR OBTAINING A HETEROGENEOUS SUBSTRATE FOR THE PRODUCTION O...

HETEROGENEOUS INTERGRATION OF GROUP III-V OR II-VI MATERIALS WITH S...

PROCESSING A WAFER FOR AN ELECTRONIC CIRCUIT

MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF...