in different semiconductor regions

Industry

CPC
H01L29/165

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/165in different semiconductor regions

Industries

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,159,872
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 12,154,971
- Issue date Nov 26, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,154,902
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,148,701
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Hongsik Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming finFET with low-dielectric-constant gate electrod...
- Patent number 12,148,832
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts
- Patent number 12,142,663
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with high-K metal gate stack
- Patent number 12,142,685
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,142,638
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with self-aligned wavy contact profile and met...
- Patent number 12,136,673
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming recesses in source/drain regions and devices fo...
- Patent number 12,132,089
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with dissimlar materials and methods
- Patent number 12,132,086
- Issue date Oct 29, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Gordon M. Grivna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with patterned fin structure
- Patent number 12,131,901
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing semiconductor de...
- Patent number 12,132,001
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Yong Kong Siew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method with enhanced gate contact and threshold...
- Patent number 12,119,403
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Max Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-inducing silicon liner in semiconductor devices
- Patent number 12,113,118
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor contact with reduced contact resistance
- Patent number 12,107,086
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with cap layer
- Patent number 12,107,165
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,164
- Issue date Oct 1, 2024
- United Microelectronics Corp.
- Chia-Jhe Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 12,107,144
- Issue date Oct 1, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,159
- Issue date Oct 1, 2024
- Kabushiki Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,100,735
- Issue date Sep 24, 2024
- Samsung Electronics Co., Ltd.
- Namkyu Edward Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistors having end portions of nan...
- Patent number 12,094,972
- Issue date Sep 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NOISE TRANSISTOR
- Publication number 20240421228
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...
- Publication number 20240405101
- Publication date Dec 5, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
- Publication number 20240405105
- Publication date Dec 5, 2024
- Analog Devices, Inc.
- F. Jacob Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395811
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Features of Semiconductor Devices and Methods of Forming...
- Publication number 20240395554
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu Shan Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240395624
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240397692
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING GATE DIELECTRIC LAYER
- Publication number 20240395564
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240379814
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379459
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240379431
- Publication date Nov 14, 2024
- Parabellum Strategic Opportunities Fund LLC
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
- Publication number 20240379817
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379677
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR
- Publication number 20240369421
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zi-Ang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240371636
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
RAISED SOURCE/DRAIN TRANSISTOR
- Publication number 20240363434
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER
- Publication number 20240363754
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE
- Publication number 20240363691
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF FIN-LIKE FIELD EFFECT TRANSISTOR
- Publication number 20240363439
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiu-Ko JANGJIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240355681
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES
- Publication number 20240355896
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shien-Yang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED STRAIN HETEROEPITAXY ASSEMBLY FOR THREE-DIMENSIONAL DEVICE...
- Publication number 20240347602
- Publication date Oct 17, 2024
- Applied Materials, Inc.
- Fredrick FISHBURN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20240347611
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...
- Publication number 20240339538
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial wafer, Method of manufacturing the epitaxial wafer, and M...
- Publication number 20240339503
- Publication date Oct 10, 2024
- UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY
- Dae Hong KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHTLY-DOPED CHANNEL EXTENSIONS
- Publication number 20240339544
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Jen Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240332298
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS

in different semiconductor regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Heterojunction bipolar transistor with buried trap rich isolation r...

Semiconductor device and method

IC including standard cells and SRAM cells

Non-planar gate all-around device and method of fabrication thereof

Forming nanosheet transistor using sacrificial spacer and inner spa...

Semiconductor device and manufacturing method thereof

Semiconductor device

Method of forming finFET with low-dielectric-constant gate electrod...

Method for forming source/drain contacts

FinFET device with high-K metal gate stack

Silicon and silicon germanium nanowire structures

Semiconductor device having a shaped epitaxial region with shaping...

Semiconductor structure

Semiconductor device including a gate-all-around field effect trans...

Contact over active gate structures for advanced integrated circuit...

Semiconductor device with self-aligned wavy contact profile and met...

Backside electrical contacts to buried power rails

Methods for forming recesses in source/drain regions and devices fo...

Semiconductor devices with dissimlar materials and methods

Semiconductor structure with patterned fin structure

Semiconductor devices and methods of manufacturing semiconductor de...

Gate structure and method with enhanced gate contact and threshold...

Stress-inducing silicon liner in semiconductor devices

Field effect transistor contact with reduced contact resistance

Semiconductor device structure with cap layer

Semiconductor device

Threshold adjustment for quantum dot array devices with metal sourc...

Semiconductor device

Semiconductor devices

Gate-all-around field effect transistors having end portions of nan...

Patents Applicationslast 30 patents

NOISE TRANSISTOR

CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...

HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Conductive Features of Semiconductor Devices and Methods of Forming...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

SEMICONDUCTOR DEVICE STRUCTURE HAVING GATE DIELECTRIC LAYER

FinFET Device With High-K Metal Gate Stack

METHOD FOR FORMING SOURCE/DRAIN CONTACTS

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

RAISED SOURCE/DRAIN TRANSISTOR

SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER

WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE

STRUCTURE AND FORMATION METHOD OF FIN-LIKE FIELD EFFECT TRANSISTOR

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

METHODS OF FORMING GATE-ALL-AROUND (GAA) DEVICES

REDUCED STRAIN HETEROEPITAXY ASSEMBLY FOR THREE-DIMENSIONAL DEVICE...

Source/Drain Feature to Contact Interfaces

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...

Epitaxial wafer, Method of manufacturing the epitaxial wafer, and M...

LIGHTLY-DOPED CHANNEL EXTENSIONS

METHOD FOR FORMING SOURCE/DRAIN CONTACTS