in IV compounds

Industry

CPC
H01S5/3427

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Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/3427in IV compounds

Industries

Patents Grantslast 30 patents

Information Patent Grant
Light-emitting or light-absorbing component
- Patent number 12,065,601
- Issue date Aug 20, 2024
- Technische Universiteit Eindhoven
- Silvana Botti
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical device and method of forming the same
- Patent number 11,962,128
- Issue date Apr 16, 2024
- Nanyang Technological University
- Donguk Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,888,079
- Issue date Jan 30, 2024
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGeSn laser diodes and method of fabricating same
- Patent number 11,757,257
- Issue date Sep 12, 2023
- Board of Trustees of the University of Arkansas
- Shui-Qing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 11,728,624
- Issue date Aug 15, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...
- Patent number 11,456,374
- Issue date Sep 27, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,424,382
- Issue date Aug 23, 2022
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced wafer bonded heterojunction bipolar transistors and method...
- Patent number 11,335,794
- Issue date May 17, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 11,271,370
- Issue date Mar 8, 2022
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer bonded GaN monolithic integrated circuits and methods of manu...
- Patent number 11,239,348
- Issue date Feb 1, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 10,756,227
- Issue date Aug 25, 2020
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 10,727,647
- Issue date Jul 28, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a suspended membrane containing a...
- Patent number 10,666,019
- Issue date May 26, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Vincent Reboud
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Guiding and confining of electromagnetic modes in low-index materials
- Patent number 10,547,160
- Issue date Jan 28, 2020
- California Institute of Technology
- Christos T. Santis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced wafer bonded heterojunction bipolar transistors and method...
- Patent number 10,505,026
- Issue date Dec 10, 2019
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly integrated multi-channel optical transceiver module and acti...
- Patent number 10,274,687
- Issue date Apr 30, 2019
- Jiangsu Hengtong Optical Network Technology Co., Ltd.
- Weiming Shi
- G02 - OPTICS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 10,193,307
- Issue date Jan 29, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 10,008,827
- Issue date Jun 26, 2018
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Advanced heterojunction devices and methods of manufacturing advanc...
- Patent number 9,666,702
- Issue date May 30, 2017
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser element and method of manufacturing semiconduct...
- Patent number 9,478,944
- Issue date Oct 25, 2016
- Furukawa Electric Co., Ltd.
- Hidehiro Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material quality, suspended material structures on lattice-mismatch...
- Patent number 9,330,907
- Issue date May 3, 2016
- The Board of Trustees of the Leland Stanford Junior University
- Robert Chen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 9,270,083
- Issue date Feb 23, 2016
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunable SOI laser
- Patent number 9,240,673
- Issue date Jan 19, 2016
- Rockley Photonics Limited
- Andrew Rickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced optical gain and lasing in indirect gap semiconductor thin...
- Patent number 9,166,363
- Issue date Oct 20, 2015
- Faquir C. Jain
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 8,731,017
- Issue date May 20, 2014
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 7,816,702
- Issue date Oct 19, 2010
- Hitachi, Ltd.
- Shinichi Saito
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum-well photoelectric device assembled from nanomembranes
- Patent number 7,776,642
- Issue date Aug 17, 2010
- Wisconsin Alumni Research Foundation
- Mark A. Eriksson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of germanium laser on silicon
- Patent number 7,596,158
- Issue date Sep 29, 2009
- Massachusetts Institute of Technology
- Jifeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quan...
- Patent number 6,897,471
- Issue date May 24, 2005
- The United States of America as represented by the Secretary of the Air Force
- Richard A. Soref
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a whispering gallery mode resonator using CVD...
- Patent number 6,541,295
- Issue date Apr 1, 2003
- The United States as represented by the Secretary of the Air Force
- Gary W. Looney
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPTICAL DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240088628
- Publication date Mar 14, 2024
- Nanyang Technological University
- Donguk NAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20230344200
- Publication date Oct 26, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL DEVICES MAKING USE OF COUNTERDOPED JUNCTIONS
- Publication number 20220367744
- Publication date Nov 17, 2022
- Quantum Semiconductor LLC
- Carlos Jorge R.P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURE OF ADVANCED WAFER BONDED HETEROJUNCTION BIPO...
- Publication number 20220278228
- Publication date Sep 1, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20220173575
- Publication date Jun 2, 2022
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
O-BAND SILICON-BASED HIGH-SPEED SEMICONDUCTOR LASER DIODE FOR OPTIC...
- Publication number 20210408767
- Publication date Dec 30, 2021
- FuJian Z.K. Litecore,Ltd.
- zheng qun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL DEVICES MAKING USE OF COUNTERDOPED JUNCTIONS
- Publication number 20200343401
- Publication date Oct 29, 2020
- Quantum Semiconductor LLC
- Carlos Jorge R.P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20200335945
- Publication date Oct 22, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIPOLAR LIGHT DEVICES INTEGRATED WITH FOREIGN SUBSTRATES AND METHO...
- Publication number 20200185885
- Publication date Jun 11, 2020
- The Regents of the University of California
- Alan Young Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GUIDING AND CONFINING OF ELECTROMAGNETIC MODES IN LOW-INDEX MATERIALS
- Publication number 20190214789
- Publication date Jul 11, 2019
- California Institute of Technology
- Christos T. Santis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY INTEGRATED MULTI-CHANNEL OPTICAL TRANSCEIVER MODULE AND ACTI...
- Publication number 20190154932
- Publication date May 23, 2019
- Jiangsu Hengtong Optic-Electric Co., Ltd.
- Weiming SHI
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20190115726
- Publication date Apr 18, 2019
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A SUSPENDED MEMBRANE CONTAINING A...
- Publication number 20190044308
- Publication date Feb 7, 2019
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Vincent REBOUD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical Devices Making Use of Counterdoped Junctions
- Publication number 20180301584
- Publication date Oct 18, 2018
- Quantum Semiconductor LLC
- Carlos Jorge R.P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20180062352
- Publication date Mar 1, 2018
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LAYER VARIATION FOR SUBSTRATE REMOVAL AFTER BONDING
- Publication number 20170085056
- Publication date Mar 23, 2017
- Skorpios Technologies, Inc.
- John Y. Spann
- G02 - OPTICS
Information Patent Application
LAYER ARRANGEMENT AND METHOD FOR FABRICATING THEREOF
- Publication number 20160141835
- Publication date May 19, 2016
- Nanyang Technological University
- Guozhen Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tensile Strained Semiconductor Photon Emission and Detection Device...
- Publication number 20150249320
- Publication date Sep 3, 2015
- Acorn Technologies, Inc.
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE SOI LASER
- Publication number 20150207296
- Publication date Jul 23, 2015
- Rockley Photonics Limited
- Andrew Rickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tensile Strained Semiconductor Photon Emission and Detection Device...
- Publication number 20140369372
- Publication date Dec 18, 2014
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin...
- Publication number 20140185640
- Publication date Jul 3, 2014
- Faquir C. Jain
- B82 - NANO-TECHNOLOGY
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20130039664
- Publication date Feb 14, 2013
- Acorn Technologies, Inc.
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM-WELL PHOTOELECTRIC DEVICE ASSEMBLED FROM NANOMEMBRANES
- Publication number 20090283749
- Publication date Nov 19, 2009
- Mark A. Eriksson
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090090925
- Publication date Apr 9, 2009
- Hitachi, Ltd.
- Shinichi Saito
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD AND STRUCTURE OF GERMANIUM LASER ON SILICON
- Publication number 20070105251
- Publication date May 10, 2007
- Massachusetts Institute of Technology
- Jifeng Liu
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light source
- Publication number 20070051963
- Publication date Mar 8, 2007
- Yifan Chen
- B82 - NANO-TECHNOLOGY

in IV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Light-emitting or light-absorbing component

Optical device and method of forming the same

Electrical devices making use of counterdoped junctions

SiGeSn laser diodes and method of fabricating same

Tensile strained semiconductor photon emission and detection device...

Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...

Electrical devices making use of counterdoped junctions

Advanced wafer bonded heterojunction bipolar transistors and method...

Tensile strained semiconductor photon emission and detection device...

Wafer bonded GaN monolithic integrated circuits and methods of manu...

Electrical devices making use of counterdoped junctions

Tensile strained semiconductor photon emission and detection device...

Semiconductor structure including a suspended membrane containing a...

Guiding and confining of electromagnetic modes in low-index materials

Advanced wafer bonded heterojunction bipolar transistors and method...

Highly integrated multi-channel optical transceiver module and acti...

Tensile strained semiconductor photon emission and detection device...

Tensile strained semiconductor photon emission and detection device...

Advanced heterojunction devices and methods of manufacturing advanc...

Semiconductor laser element and method of manufacturing semiconduct...

Material quality, suspended material structures on lattice-mismatch...

Tensile strained semiconductor photon emission and detection device...

Tunable SOI laser

Enhanced optical gain and lasing in indirect gap semiconductor thin...

Tensile strained semiconductor photon emission and detection device...

Semiconductor device

Quantum-well photoelectric device assembled from nanomembranes

Method and structure of germanium laser on silicon

Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quan...

Method of fabricating a whispering gallery mode resonator using CVD...

Patents Applicationslast 30 patents

OPTICAL DEVICE AND METHOD OF FORMING THE SAME

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

ELECTRICAL DEVICES MAKING USE OF COUNTERDOPED JUNCTIONS

METHODS OF MANUFACTURE OF ADVANCED WAFER BONDED HETEROJUNCTION BIPO...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

O-BAND SILICON-BASED HIGH-SPEED SEMICONDUCTOR LASER DIODE FOR OPTIC...

ELECTRICAL DEVICES MAKING USE OF COUNTERDOPED JUNCTIONS

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

UNIPOLAR LIGHT DEVICES INTEGRATED WITH FOREIGN SUBSTRATES AND METHO...

GUIDING AND CONFINING OF ELECTROMAGNETIC MODES IN LOW-INDEX MATERIALS

HIGHLY INTEGRATED MULTI-CHANNEL OPTICAL TRANSCEIVER MODULE AND ACTI...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

SEMICONDUCTOR STRUCTURE INCLUDING A SUSPENDED MEMBRANE CONTAINING A...

Electrical Devices Making Use of Counterdoped Junctions

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

SEMICONDUCTOR LAYER VARIATION FOR SUBSTRATE REMOVAL AFTER BONDING

LAYER ARRANGEMENT AND METHOD FOR FABRICATING THEREOF

Tensile Strained Semiconductor Photon Emission and Detection Device...

TUNABLE SOI LASER

Tensile Strained Semiconductor Photon Emission and Detection Device...

Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin...

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

QUANTUM-WELL PHOTOELECTRIC DEVICE ASSEMBLED FROM NANOMEMBRANES

SEMICONDUCTOR DEVICE

METHOD AND STRUCTURE OF GERMANIUM LASER ON SILICON

Semiconductor light source