including only semiconductor components of a single kind

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H01L27/08

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/08including only semiconductor components of a single kind

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having interconnection lines with different li...
- Patent number 12,199,042
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy poly layout for high density devices
- Patent number 12,199,087
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yung Feng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D semiconductor devices and structures with metal layers
- Patent number 12,199,093
- Issue date Jan 14, 2025
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM capacitor with a symmetrical capacitor insulator structure
- Patent number 12,199,029
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate isolation layer
- Patent number 12,199,096
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Seung Seok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stack-gate circuit
- Patent number 12,199,086
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Tao Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact over active gate structures with tapered gate or trench con...
- Patent number 12,199,161
- Issue date Jan 14, 2025
- Intel Corporation
- Charles H. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including Finfets having different gate oxide configura...
- Patent number 12,199,094
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Hyuck Soo Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors having vertically stacked nano-sheet
- Patent number 12,199,095
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Neighboring gate-all-around integrated circuit structures having co...
- Patent number 12,199,142
- Issue date Jan 14, 2025
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,191,304
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 12,191,308
- Issue date Jan 7, 2025
- Tahoe Research, LTD.
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,191,343
- Issue date Jan 7, 2025
- LAPIS SEMICONDUCTOR CO., LTD.
- Takamitsu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of silicon channel nanostructures and silicon-germanium...
- Patent number 12,191,305
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with capped air-gap spacer
- Patent number 12,191,373
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Sangkoo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,191,391
- Issue date Jan 7, 2025
- United Microelectronics Corp.
- Shou-Wan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using different work-functions to reduce gate-induced drain leakage...
- Patent number 12,191,352
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,191,368
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Yonghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure
- Patent number 12,191,303
- Issue date Jan 7, 2025
- NANYA TECHNOLOGY CORPORATION
- Hsih-Yang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar I/O and logic semiconductor devices having different wor...
- Patent number 12,191,207
- Issue date Jan 7, 2025
- Intel Corporation
- Roman W. Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,183,733
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,183,787
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ formation of metal gate modulators
- Patent number 12,183,638
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Han Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including an isolation insulating pattern on...
- Patent number 12,183,732
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Inwon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,183,734
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Sang Min Yoo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS
- Publication number 20250022877
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250022876
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sung Min KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HARD MASK DESIGN FOR IMPROVED SOURCE/DRAIN FORMATION
- Publication number 20250022938
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Hsuan Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022796
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Seigo MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION
- Publication number 20250022913
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20250022916
- Publication date Jan 16, 2025
- ROHM CO., LTD.
- Keisuke NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURES AND CIRCUITS
- Publication number 20250022775
- Publication date Jan 16, 2025
- Murata Manufacturing Co., Ltd.
- Shishir RAY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...
- Publication number 20250022914
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250022946
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250015157
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Beomjin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPLAY DEVICE AND ELECTRONIC DEVICE
- Publication number 20250014534
- Publication date Jan 9, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Atsushi Umezaki
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015179
- Publication date Jan 9, 2025
- United Microelectronics Corp.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20250015080
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR
- Publication number 20250015127
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien Yu Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Refill With Buffer Layer
- Publication number 20250014946
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD T...
- Publication number 20250015079
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20250015081
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND METHOD
- Publication number 20250016983
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015200
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Keiichi FURUYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIELECTRIC GATE ISOLATION SECTION
- Publication number 20250006732
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...
- Publication number 20250006579
- Publication date Jan 2, 2025
- Intel Corporation
- Avijit Barik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMISTOR INTEGRATED WITH A BIAS RESISTOR
- Publication number 20250006408
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Mark Robert Visokay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACER LINERS
- Publication number 20250006808
- Publication date Jan 2, 2025
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF
- Publication number 20250006818
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL-TRANSPORT TRANSISTOR...
- Publication number 20250006837
- Publication date Jan 2, 2025
- Intel Corporation
- Richard GEIGER
- H01 - BASIC ELECTRIC ELEMENTS

including only semiconductor components of a single kind

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having interconnection lines with different li...

Dummy poly layout for high density devices

3D semiconductor devices and structures with metal layers

Semiconductor devices and method of manufacturing the same

Method of manufacturing a multi-gate device having a semiconductor...

Gate line plug structures for advanced integrated circuit structure...

MIM capacitor with a symmetrical capacitor insulator structure

Semiconductor device having gate isolation layer

Stack-gate circuit

Contact over active gate structures with tapered gate or trench con...

Apparatuses including Finfets having different gate oxide configura...

Fin field effect transistors having vertically stacked nano-sheet

Neighboring gate-all-around integrated circuit structures having co...

Plugs for interconnect lines for advanced integrated circuit struct...

Method of manufacturing a semiconductor device and a semiconductor...

Non-planar semiconductor device having doped sub-fin region and met...

Semiconductor device and method of manufacturing semiconductor device

Reducing off-state leakage in semiconductor devices

Integration of silicon channel nanostructures and silicon-germanium...

Method of forming a semiconductor device with capped air-gap spacer

Semiconductor device and method for fabricating the same

Using different work-functions to reduce gate-induced drain leakage...

Semiconductor device

Semiconductor device structure

Non-planar I/O and logic semiconductor devices having different wor...

Semiconductor device structure and methods of forming the same

Semiconductor device with silicide gate fill structure

In-situ formation of metal gate modulators

Semiconductor devices including an isolation insulating pattern on...

Semiconductor device and method for fabricating the same

Patents Applicationslast 30 patents

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SPACERS

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

GATE HARD MASK DESIGN FOR IMPROVED SOURCE/DRAIN FORMATION

SEMICONDUCTOR DEVICE

TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION

SIC SEMICONDUCTOR DEVICE

3-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURES AND CIRCUITS

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

DISPLAY DEVICE AND ELECTRONIC DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

Cut Metal Gate Refill With Buffer Layer

SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD T...

FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

MEMORY DEVICE STRUCTURE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING DIELECTRIC GATE ISOLATION SECTION

MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...

THERMISTOR INTEGRATED WITH A BIAS RESISTOR

INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACER LINERS

TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF

INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL-TRANSPORT TRANSISTOR...