including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier

Industry

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier

Industries

Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,706,934
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,688,446
- Issue date Jun 27, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device including a memory element between wiring layers and...
- Patent number 11,683,942
- Issue date Jun 20, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Jun Sumino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D micro display device and structure
- Patent number 11,682,683
- Issue date Jun 20, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing variable resistance memory device
- Patent number 11,683,940
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Dongkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,682,442
- Issue date Jun 20, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory systems with vertical integration
- Patent number 11,676,641
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory layout for reduced line loading
- Patent number 11,678,494
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,672,129
- Issue date Jun 6, 2023
- Kioxia Corporation
- Shoichi Kabuyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,672,132
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Tae Hong Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,672,131
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Yumin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,665,912
- Issue date May 30, 2023
- SK hynix Inc.
- Tae Jung Ha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three dimensional semiconductor memory devices
- Patent number 11,665,914
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Si-Ho Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon over insulator two-transistor one-resistor in-series resist...
- Patent number 11,659,720
- Issue date May 23, 2023
- Weebit Nano Ltd.
- Lior Dagan
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite electrode material chemistry
- Patent number 11,659,778
- Issue date May 23, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selector device and method of making the same
- Patent number 11,659,781
- Issue date May 23, 2023
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with data storage structure and method for...
- Patent number 11,653,503
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Woan-Yun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate formation in memory
- Patent number 11,652,153
- Issue date May 16, 2023
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM device structure and manufacturing method
- Patent number 11,653,581
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,653,505
- Issue date May 16, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnection structure of an integrated circuit
- Patent number 11,653,577
- Issue date May 16, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean-Philippe Reynard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 11,653,578
- Issue date May 16, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell including programmable resistors with transistor compon...
- Patent number 11,646,079
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY
- Publication number 20240215462
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELEC...
- Publication number 20240196628
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY STRUCTURE HAVING BIT LINE FOR REDUCING SIGNAL RES...
- Publication number 20240196629
- Publication date Jun 13, 2024
- GLOBAL FOUNDRIES U.S. Inc.
- Sandeep PURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE
- Publication number 20240188455
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL RERAM DEVICE
- Publication number 20240179924
- Publication date May 30, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20240180047
- Publication date May 30, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240172455
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...
- Publication number 20240164224
- Publication date May 16, 2024
- United Microelectronics Corp.
- Kai-Jiun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ELEMENTS ACCESSED BY BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240147736
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND STORAGE ON A SINGLE CHIP
- Publication number 20240130143
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240130254
- Publication date Apr 18, 2024
- United Microelectronics Corp.
- Yen-Min TING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER
- Publication number 20240130255
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Robert Viktor Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS
- Publication number 20240130142
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE MRAM WITH FRONTSIDE DEVICES
- Publication number 20240114699
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...
- Publication number 20240114813
- Publication date Apr 4, 2024
- TetraMem Inc.
- Mingche Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240107902
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20240098992
- Publication date Mar 21, 2024
- SANDISK TECHNOLOGIES LLC
- Tatsuya HINOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boron Surface Passivation of Phase Change Memory Material
- Publication number 20240099166
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pillar Based Memory (MRAM) Embedded within the Buried Power Rail wi...
- Publication number 20240090235
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Wu-Chang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
- Publication number 20240090350
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER
- Publication number 20240090352
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM
- Publication number 20240090353
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Samuel Sung Shik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED METAL SIGNAL RAIL FOR MEMORY ARRAYS
- Publication number 20240079326
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS
- Publication number 20240081159
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240081158
- Publication date Mar 7, 2024
- UNITED MICROELECTRONICS CORP.
- Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS

including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Cross-point memory array and related fabrication techniques

Forced current access with voltage clamping in cross-point array

Memory device including a memory element between wiring layers and...

3D micro display device and structure

Method of manufacturing variable resistance memory device

Forced current access with voltage clamping in cross-point array

Memory systems with vertical integration

Memory layout for reduced line loading

Semiconductor devices comprising threshold switching materials

Memory device

Variable resistance memory device

Two-terminal reversibly switchable memory device

Semiconductor device and method of forming the same

Memory device and method of manufacturing the same

Non-volatile memory

Electronic device and method for fabricating the same

Three dimensional semiconductor memory devices

Silicon over insulator two-transistor one-resistor in-series resist...

Composite electrode material chemistry

Selector device and method of making the same

Semiconductor structure with data storage structure and method for...

Memory devices

Replacement gate formation in memory

RRAM device structure and manufacturing method

Cross-point memory array and related fabrication techniques

Interconnection structure of an integrated circuit

Phase-change material-based XOR logic gates

Memory cell including programmable resistors with transistor compon...

Oxide-based resistive memory having a plasma-exposed bottom electrode

Patents Applicationslast 30 patents

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

EMBEDDED ReRAM WITH BACKSIDE CONTACT

MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELEC...

MEMORY CELL ARRAY STRUCTURE HAVING BIT LINE FOR REDUCING SIGNAL RES...

PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE

THREE DIMENSIONAL RERAM DEVICE

PHASE CHANGE MEMORY

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...

ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...

RESISTIVE MEMORY ELEMENTS ACCESSED BY BIPOLAR JUNCTION TRANSISTORS

MEMORY AND STORAGE ON A SINGLE CHIP

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER

RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS

BACKSIDE MRAM WITH FRONTSIDE DEVICES

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

Boron Surface Passivation of Phase Change Memory Material

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

Pillar Based Memory (MRAM) Embedded within the Buried Power Rail wi...

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM

BURIED METAL SIGNAL RAIL FOR MEMORY ARRAYS

PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS

RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME