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H01L29/201

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/201including two or more compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,094,963
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,080,778
- Issue date Sep 3, 2024
- United Microelectronics Corp.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 11,935,943
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Hyun Kwan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for a high-electron-mobility transistor and related methods
- Patent number 11,888,051
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jiacheng Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor interface between gate and active region
- Patent number 11,843,035
- Issue date Dec 12, 2023
- Micron Technology, Inc.
- Moeko Kawana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 11,784,238
- Issue date Oct 10, 2023
- United Microelectronics Corp.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V fins by aspect ratio trapping and self-aligned etch to remove...
- Patent number 11,776,956
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-containing fin of a transistor device with an indium-rich core
- Patent number 11,764,275
- Issue date Sep 19, 2023
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing of semiconductor films with reduced evaporati...
- Patent number 11,735,419
- Issue date Aug 22, 2023
- The Regents of the University of California
- Christian J. Zollner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked, high-blocking InGaAs semiconductor power diode
- Patent number 11,699,722
- Issue date Jul 11, 2023
- AZUR SPACE
- Daniel Fuhrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) having an indium-containin...
- Patent number 11,551,927
- Issue date Jan 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 11,532,740
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V compound semiconductor substrate and group III-V compou...
- Patent number 11,444,161
- Issue date Sep 13, 2022
- Sumitomo Electric Industries, Ltd.
- Shinya Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 11,322,600
- Issue date May 3, 2022
- United Microelectronics Corp.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-tunnel field-effect transistor (TFET) having a tunnel barrie...
- Patent number 11,264,452
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked, high-blocking InGaAs semiconductor power diode
- Patent number 11,257,909
- Issue date Feb 22, 2022
- Azur Space Solar Power GmbH
- Daniel Fuhrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing the same
- Patent number 11,239,344
- Issue date Feb 1, 2022
- Samsung Electronics Co., Ltd.
- Hyun Kwan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect-transistors
- Patent number 11,227,919
- Issue date Jan 18, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistors with high charge mobility channel mater...
- Patent number 11,222,952
- Issue date Jan 11, 2022
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel layer formed in an art trench
- Patent number 11,164,974
- Issue date Nov 2, 2021
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,107,895
- Issue date Aug 31, 2021
- Mitsubishi Electric Corporation
- Tetsuro Hayashida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors with self aligned source/drain ju...
- Patent number 11,107,905
- Issue date Aug 31, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method of forming same
- Patent number 11,088,280
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal source and drain contacts for multi-gate field effect tra...
- Patent number 11,063,128
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 11,031,315
- Issue date Jun 8, 2021
- Semiconductor Manufacturing International (Beijing) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V fins by aspect ratio trapping and self-aligned etch to remove...
- Patent number 11,031,393
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,004,966
- Issue date May 11, 2021
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors
- Patent number 10,991,819
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIF...
- Publication number 20240379765
- Publication date Nov 14, 2024
- GAN SYSTEMS INC.
- Claudio Andres Canizares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240371968
- Publication date Nov 7, 2024
- UNITED MICROELECTRONICS CORP.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A TRANSISTOR, AN ELECTRICAL DEVICE, AND A METHOD FOR PRODUCING A TR...
- Publication number 20240363693
- Publication date Oct 31, 2024
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE BIASING OF HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240282827
- Publication date Aug 22, 2024
- GAN SYSTEMS INC.
- Marco A. ZUNIGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure for Improved Radio Frequency Thermal Manage...
- Publication number 20240266426
- Publication date Aug 8, 2024
- Wolfspeed, Inc.
- Matthew R. King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20240079232
- Publication date Mar 7, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Liyang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20230402527
- Publication date Dec 14, 2023
- UNITED MICROELECTRONICS CORP.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC COMPONENT, METHOD FOR THE CONTROL THEREOF, AND METHOD FO...
- Publication number 20230395707
- Publication date Dec 7, 2023
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Simon FICHTNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230123907
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20220223716
- Publication date Jul 14, 2022
- UNITED MICROELECTRONICS CORP.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INTERFACE BETWEEN GATE AND ACTIVE REGION
- Publication number 20220199779
- Publication date Jun 23, 2022
- Micron Technology, Inc.
- Moeko Kawana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED, HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE
- Publication number 20220140088
- Publication date May 5, 2022
- AZUR SPACE SOLAR POWER GMBH
- Daniel FUHRMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20220130982
- Publication date Apr 28, 2022
- Samsung Electronics Co., Ltd.
- HYUN KWAN YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR A HIGH-ELECTRON-MOBILITY TRANSISTOR AND RELATED METHODS
- Publication number 20210351286
- Publication date Nov 11, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Jiacheng Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20210313462
- Publication date Oct 7, 2021
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE...
- Publication number 20210249410
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20210226047
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTORS WITH HIGH CHARGE MOBILITY CHANNEL MATER...
- Publication number 20210226009
- Publication date Jul 22, 2021
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20210083073
- Publication date Mar 18, 2021
- UNITED MICROELECTRONICS CORP.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR SUBSTRATE AND GROUP III-V COMPOU...
- Publication number 20210057527
- Publication date Feb 25, 2021
- Sumitomo Electric Industries, Ltd.
- Shinya FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200381519
- Publication date Dec 3, 2020
- Mitsubishi Electric Corporation
- Tetsuro HAYASHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED, HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE
- Publication number 20200350407
- Publication date Nov 5, 2020
- AZUR SPACE SOLAR POWER GMBH
- Daniel FUHRMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20200328290
- Publication date Oct 15, 2020
- Samsung Electronics Co., Ltd.
- HYUN KWAN YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING OF SEMICONDUCTOR FILMS WITH REDUCED EVAPORATI...
- Publication number 20200243334
- Publication date Jul 30, 2020
- The Regents of the University of California
- Christian J. Zollner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20200243651
- Publication date Jul 30, 2020
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE...
- Publication number 20200176445
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTORS WITH EMBEDDED DIELECTRIC SPACERS
- Publication number 20200168703
- Publication date May 28, 2020
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Application
AN INDIUM-CONTAINING FIN OF A TRANSISTOR DEVICE WITH AN INDIUM-RICH...
- Publication number 20200066855
- Publication date Feb 27, 2020
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR SUBSTRATE AND GROUP III-V COMPOU...
- Publication number 20200052075
- Publication date Feb 13, 2020
- Sumitomo Electric Industries, Ltd.
- Shinya FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20190245074
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- YAO-CHUNG CHANG
- H01 - BASIC ELECTRIC ELEMENTS

including two or more compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Reducing off-state leakage in semiconductor devices

Semiconductor structure, HEMT structure and method of forming the same

Nitride semiconductor device

High electron mobility transistor

Semiconductor devices and methods of manufacturing the same

Structures for a high-electron-mobility transistor and related methods

Transistor interface between gate and active region

High electron mobility transistor

III-V fins by aspect ratio trapping and self-aligned etch to remove...

Indium-containing fin of a transistor device with an indium-rich core

Method for processing of semiconductor films with reduced evaporati...

Stacked, high-blocking InGaAs semiconductor power diode

High electron mobility transistor (HEMT) having an indium-containin...

Semiconductor structure, HEMT structure and method of forming the same

Group III-V compound semiconductor substrate and group III-V compou...

High electron mobility transistor

Hetero-tunnel field-effect transistor (TFET) having a tunnel barrie...

Stacked, high-blocking InGaAs semiconductor power diode

Semiconductor devices and methods of manufacturing the same

Field-effect-transistors

Gate all around transistors with high charge mobility channel mater...

Channel layer formed in an art trench

Semiconductor device

Vertical field effect transistors with self aligned source/drain ju...

Transistor and method of forming same

Conformal source and drain contacts for multi-gate field effect tra...

Semiconductor structure and fabrication method thereof

III-V fins by aspect ratio trapping and self-aligned etch to remove...

Nitride semiconductor device

High electron mobility transistors

Patents Applicationslast 30 patents

SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIF...

HIGH ELECTRON MOBILITY TRANSISTOR

A TRANSISTOR, AN ELECTRICAL DEVICE, AND A METHOD FOR PRODUCING A TR...

FIELD PLATE BIASING OF HIGH ELECTRON MOBILITY TRANSISTOR

Semiconductor Structure for Improved Radio Frequency Thermal Manage...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

HIGH ELECTRON MOBILITY TRANSISTOR

ELECTRONIC COMPONENT, METHOD FOR THE CONTROL THEREOF, AND METHOD FO...

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR

TRANSISTOR INTERFACE BETWEEN GATE AND ACTIVE REGION

STACKED, HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

STRUCTURES FOR A HIGH-ELECTRON-MOBILITY TRANSISTOR AND RELATED METHODS

NITRIDE SEMICONDUCTOR DEVICE

III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE...

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME

GATE ALL AROUND TRANSISTORS WITH HIGH CHARGE MOBILITY CHANNEL MATER...

HIGH ELECTRON MOBILITY TRANSISTOR

GROUP III-V COMPOUND SEMICONDUCTOR SUBSTRATE AND GROUP III-V COMPOU...

SEMICONDUCTOR DEVICE

STACKED, HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

METHOD FOR PROCESSING OF SEMICONDUCTOR FILMS WITH REDUCED EVAPORATI...

GALLIUM NITRIDE MATERIALS AND METHODS

III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE...

NANOWIRE TRANSISTORS WITH EMBEDDED DIELECTRIC SPACERS

AN INDIUM-CONTAINING FIN OF A TRANSISTOR DEVICE WITH AN INDIUM-RICH...

GROUP III-V COMPOUND SEMICONDUCTOR SUBSTRATE AND GROUP III-V COMPOU...

SEMICONDUCTOR STRUCTURE, HEMT STRUCTURE AND METHOD OF FORMING THE SAME