integrated circuits made of compound material

Industry

CPC
H01L27/0605

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/0605integrated circuits made of compound material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Electrostatic discharge protection circuit and semiconductor circuit
- Patent number 11,973,076
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Fang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-polar devices including a depleting layer with improved conductivity
- Patent number 11,973,138
- Issue date Apr 30, 2024
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with an auxiliary gate structure
- Patent number 11,955,478
- Issue date Apr 9, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Martin Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,948,980
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced interfacial area III-nitride material semiconductor structures
- Patent number 11,942,518
- Issue date Mar 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN devices
- Patent number 11,929,364
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,923,448
- Issue date Mar 5, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor substrate with monolithically integrated c...
- Patent number 11,916,068
- Issue date Feb 27, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation and/or protection structures
- Patent number 11,887,945
- Issue date Jan 30, 2024
- Wolfspeed, Inc.
- Lei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integrated half-bridge circuit
- Patent number 11,876,437
- Issue date Jan 16, 2024
- Infineon Technologies Austria AG
- Kennith Kin Leong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,869,887
- Issue date Jan 9, 2024
- Danfeng Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Terahertz oscillator and producing method thereof
- Patent number 11,863,125
- Issue date Jan 2, 2024
- Tokyo Institute of Technology
- Safumi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a bidirectional switch and discharge ci...
- Patent number 11,862,630
- Issue date Jan 2, 2024
- Infineon Technologies Austria AG
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,854,909
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for pillar connection on frontside and passive device integ...
- Patent number 11,842,997
- Issue date Dec 12, 2023
- Wolfspeed, Inc.
- Terry Alcorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterolithic integrated circuits including integrated devices forme...
- Patent number 11,817,450
- Issue date Nov 14, 2023
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic component comprising a gallium nitride power transistor
- Patent number 11,810,911
- Issue date Nov 7, 2023
- STMicroelectronics Application GmbH
- Mathieu Rouviere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride transistor structure capable of reducing leakage...
- Patent number 11,810,910
- Issue date Nov 7, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated LIDAR illumination power control
- Patent number 11,808,891
- Issue date Nov 7, 2023
- VELODYNE LIDAR USA, INC.
- David S. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device
- Patent number 11,791,335
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Te Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for pillar connection on frontside and passive device integ...
- Patent number 11,769,768
- Issue date Sep 26, 2023
- Wolfspeed, Inc.
- Terry Alcorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor embedded dynamic random-access memory with sha...
- Patent number 11,758,711
- Issue date Sep 12, 2023
- Intel Corporation
- Yih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices including vertical memory cells and related methods
- Patent number 11,758,716
- Issue date Sep 12, 2023
- Micron Technology, Inc.
- Adam W. Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,721,692
- Issue date Aug 8, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus to form silicon-based transistors on group II...
- Patent number 11,715,799
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,710,778
- Issue date Jul 25, 2023
- United Microelectronics Corp.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 11,705,486
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VOLTAGE REGULATOR CIRCUIT
- Publication number 20240136351
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH
- Publication number 20240136408
- Publication date Apr 25, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE
- Publication number 20240136343
- Publication date Apr 25, 2024
- ROBERT BOSCH GmbH
- Felix Stewing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATER...
- Publication number 20240105595
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240096878
- Publication date Mar 21, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Danfeng MAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE DETECTION USING NEGATIVE TEMPERATURE COEFFICIENT RESIST...
- Publication number 20240085247
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC CASCODE MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS
- Publication number 20240079484
- Publication date Mar 7, 2024
- Virginia Tech Intellectual Properties, Inc.
- Yuhao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20240079405
- Publication date Mar 7, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240030216
- Publication date Jan 25, 2024
- Nuvoton Technology Corporation
- Wen-Ying Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20240021604
- Publication date Jan 18, 2024
- STMicroelectronics Application GmbH
- Mathieu ROUVIERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPLIFIER CIRCUIT
- Publication number 20230402451
- Publication date Dec 14, 2023
- Sumitomo Electric Industries, Ltd.
- Koshi HAMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures With Improved Reliability
- Publication number 20230395531
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN POWER TRANSISTOR HAVING A VOLTAGE CLAMPING NODE WITH AVALANCHE...
- Publication number 20230378163
- Publication date Nov 23, 2023
- THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Jing CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230327003
- Publication date Oct 12, 2023
- UNITED MICROELECTRONICS CORP.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD EFFECT TRANSISTOR
- Publication number 20230326921
- Publication date Oct 12, 2023
- International Business Machines Corporation
- Eunjung Cha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR OPTOELECTRONIC INTEGRATED CIRCUIT AND METHODOLOGY FOR...
- Publication number 20230317819
- Publication date Oct 5, 2023
- Geoff W. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN 3D POWER BLOCK
- Publication number 20230307441
- Publication date Sep 28, 2023
- Intel Corporation
- Ahmed ABOU-ALFOTOUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20230299133
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATED HALF-BRIDGE CIRCUIT
- Publication number 20230283166
- Publication date Sep 7, 2023
- Infineon Technologies Austria AG
- Kennith Kin Leong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...
- Publication number 20230260988
- Publication date Aug 17, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCEPT FOR SILICON FOR CARBIDE POWER DEVICES
- Publication number 20230246020
- Publication date Aug 3, 2023
- II-VI Delaware, Inc.
- Adolf Schöner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction based half bridge
- Publication number 20230246019
- Publication date Aug 3, 2023
- Cambridge GaN Devices Limited
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF CAPACITOR STRUCTURE
- Publication number 20230231003
- Publication date Jul 20, 2023
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20230223399
- Publication date Jul 13, 2023
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20230223400
- Publication date Jul 13, 2023
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON...
- Publication number 20230207557
- Publication date Jun 29, 2023
- MACOM Technology Solutions Holdings, Inc.
- Douglas Carlson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON...
- Publication number 20230207558
- Publication date Jun 29, 2023
- MACOM Technology Solutions Holdings, Inc.
- Douglas Carlson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, DEVICES, AND SYSTEMS RELATED TO FORMING SEMICONDUCTOR POWE...
- Publication number 20230197788
- Publication date Jun 22, 2023
- Micron Technology, Inc.
- Martin F. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURABLE GALLIUM CONTAINING ELECTRONIC DEVICES
- Publication number 20230178611
- Publication date Jun 8, 2023
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS

integrated circuits made of compound material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electrostatic discharge protection circuit and semiconductor circuit

N-polar devices including a depleting layer with improved conductivity

Manufacturable thin film gallium and nitrogen containing devices

Power semiconductor device with an auxiliary gate structure

Manufacturable thin film gallium and nitrogen containing devices

Tunnel polarization junction III-N transistors

Reduced interfacial area III-nitride material semiconductor structures

Parasitic capacitance reduction in GaN devices

High voltage blocking III-V semiconductor device

Type III-V semiconductor substrate with monolithically integrated c...

Semiconductor device with isolation and/or protection structures

Monolithic integrated half-bridge circuit

Semiconductor device and manufacturing method thereof

Terahertz oscillator and producing method thereof

Semiconductor device having a bidirectional switch and discharge ci...

Semiconductor structure and method for manufacturing thereof

Methods for pillar connection on frontside and passive device integ...

Heterolithic integrated circuits including integrated devices forme...

Monolithic component comprising a gallium nitride power transistor

Group III nitride transistor structure capable of reducing leakage...

Integrated LIDAR illumination power control

Method for forming semiconductor device

Methods for pillar connection on frontside and passive device integ...

Thin-film transistor embedded dynamic random-access memory with sha...

Electronic devices including vertical memory cells and related methods

Semiconductor device and fabrication method thereof

Methods and apparatus to form silicon-based transistors on group II...

Semiconductor device and method for fabricating the same

Isolation structure for active devices

Logic circuit with indium nitride quantum well

Patents Applicationslast 30 patents

VOLTAGE REGULATOR CIRCUIT

THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH

SEMICONDUCTOR MODULE

ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATER...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

TEMPERATURE DETECTION USING NEGATIVE TEMPERATURE COEFFICIENT RESIST...

MONOLITHIC CASCODE MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS

HIGH-ELECTRON-MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE

MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR

AMPLIFIER CIRCUIT

Semiconductor Structures With Improved Reliability

GAN POWER TRANSISTOR HAVING A VOLTAGE CLAMPING NODE WITH AVALANCHE...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH FIELD EFFECT TRANSISTOR

SEMICONDUCTOR OPTOELECTRONIC INTEGRATED CIRCUIT AND METHODOLOGY FOR...

GAN 3D POWER BLOCK

ISOLATION STRUCTURE FOR ACTIVE DEVICES

MONOLITHIC INTEGRATED HALF-BRIDGE CIRCUIT

GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...

CONCEPT FOR SILICON FOR CARBIDE POWER DEVICES

Heterojunction based half bridge

MANUFACTURING METHOD OF CAPACITOR STRUCTURE

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON...

MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON...

METHODS, DEVICES, AND SYSTEMS RELATED TO FORMING SEMICONDUCTOR POWE...

MANUFACTURABLE GALLIUM CONTAINING ELECTRONIC DEVICES