into an oxide layer

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H01L21/02332

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02332into an oxide layer

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Patents Grantslast 30 patents

Information Patent Grant
Varying temperature anneal for film and structures formed thereby
- Patent number 12,176,206
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced trap defect and method of forming...
- Patent number 12,119,389
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing semiconductor structure and semiconductor stru...
- Patent number 12,119,222
- Issue date Oct 15, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Mengmeng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soft ashing process for forming protective layer on conductive cap...
- Patent number 12,033,860
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guan-Xuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon dioxide film and method for forming meta...
- Patent number 11,990,331
- Issue date May 21, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jingwen Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,978,676
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modifying ferroelectric properties of hafnium oxide with hafnium ni...
- Patent number 11,923,404
- Issue date Mar 5, 2024
- Lam Research Corporation
- Hyungsuk Alexander Yoon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate processing method and substrate processing apparatus
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- Issue date Jan 30, 2024
- Tokyo Electron Limited
- Jaewon Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device
- Patent number 11,876,122
- Issue date Jan 16, 2024
- United Microelectronics Corp.
- Chia-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of diffusing nitrogen into a tunnel layer of a nonvolatile m...
- Patent number 11,764,291
- Issue date Sep 19, 2023
- SK hynix Inc.
- Bo Yun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced trap defect and method of forming...
- Patent number 11,764,284
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
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- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Andrew Joseph Kelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varying temperature anneal for film and structures formed thereby
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- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
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- Issue date Jan 3, 2023
- United Microelectronics Corp.
- Chia-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method of fabricating the same
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- Issue date Sep 6, 2022
- SK hynix Inc.
- Bo Yun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced trap defect and method of forming...
- Patent number 11,329,139
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing method
- Patent number 11,264,236
- Issue date Mar 1, 2022
- Tokyo Electron Limited
- Toru Hisamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varying temperature anneal for film and structures formed thereby
- Patent number 11,244,823
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VFET devices with ILD protection
- Patent number 11,164,959
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate capping layers of semiconductor devices
- Patent number 11,164,954
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Workpiece processing method
- Patent number 11,133,192
- Issue date Sep 28, 2021
- Tokyo Electron Limited
- Masahiro Tabata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure
- Patent number 11,133,216
- Issue date Sep 28, 2021
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 11,101,357
- Issue date Aug 24, 2021
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Argon addition to remote plasma oxidation
- Patent number 11,081,340
- Issue date Aug 3, 2021
- Applied Materials, Inc.
- Hansel Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,069,821
- Issue date Jul 20, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Guo Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,978,549
- Issue date Apr 13, 2021
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Capacitor including first electrode, second electrode, and dielectr...
- Patent number 10,916,621
- Issue date Feb 9, 2021
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Takahiro Koyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having isolation struc...
- Patent number 10,867,859
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating gate oxide of semiconductor device
- Patent number 10,763,114
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Andrew Joseph Kelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of self-aligned bottom spacer for vertical transistors
- Patent number 10,749,012
- Issue date Aug 18, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TREATMENTS TO ENHANCE MATERIAL STRUCTURES
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Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED TRAP DEFECT AND METHOD OF FORMING...
- Publication number 20240371974
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN HSIUNG TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED FORMATION OF GATE INTERFACE
- Publication number 20240339318
- Publication date Oct 10, 2024
- Applied Materials, Inc.
- Steven C. H. HUNG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SOFT ASHING PROCESS FOR FORMING PROTECTIVE LAYER ON CONDUCTIVE CAP...
- Publication number 20240321582
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- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guan-Xuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240266229
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATION FOR A SEMICONDUCTOR STRUCTURE
- Publication number 20240170324
- Publication date May 23, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yi TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SURFACE TREATMENT FOR WAFER BONDING METHODS
- Publication number 20240071746
- Publication date Feb 29, 2024
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED TRAP DEFECT AND METHOD OF FORMING...
- Publication number 20230369454
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN HSIUNG TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230343595
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Andrew Joseph KELLY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Varying Temperature Anneal for Film and Structures Formed Thereby
- Publication number 20230317448
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Comprising Bottom Isolation Structures
- Publication number 20230178593
- Publication date Jun 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Ting Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20230091153
- Publication date Mar 23, 2023
- UNITED MICROELECTRONICS CORP.
- Chia-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20230074163
- Publication date Mar 9, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230038762
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOFT ASHING PROCESS FOR FORMING PROTECTIVE LAYER ON CONDUCTIVE CAP...
- Publication number 20230014509
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guan-Xuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20220376092
- Publication date Nov 24, 2022
- SK HYNIX INC.
- Bo Yun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220302279
- Publication date Sep 22, 2022
- UNITED MICROELECTRONICS CORP.
- Chia-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED TRAP DEFECT AND METHOD OF FORMING...
- Publication number 20220262924
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN HSIUNG TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRU...
- Publication number 20220223412
- Publication date Jul 14, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Mengmeng YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Varying Temperature Anneal for Film and Structures Formed Thereby
- Publication number 20220157596
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON DIOXIDE FILM AND METHOD FOR FORMING META...
- Publication number 20210391169
- Publication date Dec 16, 2021
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Jingwen LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20210104402
- Publication date Apr 8, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210074804
- Publication date Mar 11, 2021
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao HUANG
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- Publication number 20210057215
- Publication date Feb 25, 2021
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- Steven C. H. HUNG
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Information Patent Application
MODIFYING FERROELECTRIC PROPERTIES OF HAFNIUM OXIDE WITH HAFNIUM NI...
- Publication number 20210028273
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- LAM RESEARCH CORPORATION
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Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED TRAP DEFECT AND METHOD OF FORMING...
- Publication number 20210020761
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN HSIUNG TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200395216
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Andrew Joseph KELLY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CAPPING LAYERS OF SEMICONDUCTOR DEVICES
- Publication number 20200388693
- Publication date Dec 10, 2020
- GLOBALFOUNDRIES INC.
- SIPENG GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20200365702
- Publication date Nov 19, 2020
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
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- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY

into an oxide layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Varying temperature anneal for film and structures formed thereby

Semiconductor device with reduced trap defect and method of forming...

Method for preparing semiconductor structure and semiconductor stru...

Soft ashing process for forming protective layer on conductive cap...

Method for forming silicon dioxide film and method for forming meta...

Semiconductor structure and method of forming the same

Modifying ferroelectric properties of hafnium oxide with hafnium ni...

Substrate processing method and substrate processing apparatus

Method for forming semiconductor device

Method of diffusing nitrogen into a tunnel layer of a nonvolatile m...

Semiconductor device with reduced trap defect and method of forming...

Semiconductor device

Varying temperature anneal for film and structures formed thereby

Semiconductor device and fabrication method thereof

Nonvolatile memory device and method of fabricating the same

Semiconductor device with reduced trap defect and method of forming...

Substrate processing method

Varying temperature anneal for film and structures formed thereby

VFET devices with ILD protection

Gate capping layers of semiconductor devices

Workpiece processing method

Interconnect structure

Asymmetric high-k dielectric for reducing gate induced drain leakage

Argon addition to remote plasma oxidation

Semiconductor device and manufacturing method thereof

Semiconductor device and method for fabricating the same

Capacitor including first electrode, second electrode, and dielectr...

Methods of fabricating semiconductor devices having isolation struc...

Method of fabricating gate oxide of semiconductor device

Formation of self-aligned bottom spacer for vertical transistors

Patents Applicationslast 30 patents

TREATMENTS TO ENHANCE MATERIAL STRUCTURES

SEMICONDUCTOR DEVICE WITH REDUCED TRAP DEFECT AND METHOD OF FORMING...

SEGMENTED FORMATION OF GATE INTERFACE

SOFT ASHING PROCESS FOR FORMING PROTECTIVE LAYER ON CONDUCTIVE CAP...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

METHOD OF FABRICATION FOR A SEMICONDUCTOR STRUCTURE

PLASMA SURFACE TREATMENT FOR WAFER BONDING METHODS

SEMICONDUCTOR DEVICE WITH REDUCED TRAP DEFECT AND METHOD OF FORMING...

SEMICONDUCTOR DEVICE

Varying Temperature Anneal for Film and Structures Formed Thereby

Metal-Comprising Bottom Isolation Structures

METHOD FOR FORMING SEMICONDUCTOR DEVICE

SONOS ONO STACK SCALING

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SOFT ASHING PROCESS FOR FORMING PROTECTIVE LAYER ON CONDUCTIVE CAP...

NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE WITH REDUCED TRAP DEFECT AND METHOD OF FORMING...

METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRU...

Varying Temperature Anneal for Film and Structures Formed Thereby

METHOD FOR FORMING SILICON DIOXIDE FILM AND METHOD FOR FORMING META...

SONOS ONO STACK SCALING

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

TREATMENTS TO ENHANCE MATERIAL STRUCTURES

MODIFYING FERROELECTRIC PROPERTIES OF HAFNIUM OXIDE WITH HAFNIUM NI...

SEMICONDUCTOR DEVICE WITH REDUCED TRAP DEFECT AND METHOD OF FORMING...

SEMICONDUCTOR DEVICE

GATE CAPPING LAYERS OF SEMICONDUCTOR DEVICES

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...