Inverted VDMOS transistors

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H01L29/781

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/781Inverted VDMOS transistors

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Patents Grantslast 30 patents

Information Patent Grant
Device having increased forward biased safe operating area using so...
- Patent number 12,230,686
- Issue date Feb 18, 2025
- Infineon Technologies Americas Corp.
- Praveen Shenoy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 12,230,693
- Issue date Feb 18, 2025
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,627
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Isao Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and chip singulation method
- Patent number 12,232,337
- Issue date Feb 18, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yoshihiro Matsushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shield structure for backside through substrate vias (TSVs)
- Patent number 12,230,554
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFETs with improved trench terminations and...
- Patent number 12,230,705
- Issue date Feb 18, 2025
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with field plates
- Patent number 12,230,710
- Issue date Feb 18, 2025
- ABLIC INC.
- Shinichirou Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device
- Patent number 12,230,703
- Issue date Feb 18, 2025
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Yi Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a cell field and method of fabricating a g...
- Patent number 12,230,706
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,224,341
- Issue date Feb 11, 2025
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with gate-source ESD diode structure
- Patent number 12,224,311
- Issue date Feb 11, 2025
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,224,320
- Issue date Feb 11, 2025
- Fuji Electric Co., Ltd.
- Yoshihito Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,224,313
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Yuhki Fujino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure for a trench power MOSFET with a split gate...
- Patent number 12,224,342
- Issue date Feb 11, 2025
- STMicroelectronics Pte Ltd
- Yean Ching Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,345
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Load switch including back-to-back connected transistors
- Patent number 12,224,740
- Issue date Feb 11, 2025
- Nuvolta Technoloiges (Heifei) Co., Ltd.
- Jinbiao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 12,224,283
- Issue date Feb 11, 2025
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Janbo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and poly gate
- Patent number 12,217,975
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method
- Patent number 12,218,228
- Issue date Feb 4, 2025
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid component with silicon and wide bandgap semconductor material
- Patent number 12,218,235
- Issue date Feb 4, 2025
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,218,234
- Issue date Feb 4, 2025
- Rohm Co., Ltd.
- Kengo Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,218,194
- Issue date Feb 4, 2025
- SK Hynix Inc.
- Hae Jung Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,218,189
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,218,134
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 12,211,807
- Issue date Jan 28, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double diffused MOS device
- Patent number 12,211,909
- Issue date Jan 28, 2025
- NuVolta Technologies (Hefei) Co., Ltd.
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor having improved layout
- Patent number 12,211,916
- Issue date Jan 28, 2025
- Ampleon Netherlands B.V.
- Patrick Valk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for designing thereof
- Patent number 12,211,903
- Issue date Jan 28, 2025
- mqSemi AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved breakdown voltage
- Patent number 12,211,932
- Issue date Jan 28, 2025
- Renesas Electronics Corporation
- Machiko Sato
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE
- Publication number 20250063775
- Publication date Feb 20, 2025
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES
- Publication number 20250063774
- Publication date Feb 20, 2025
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063794
- Publication date Feb 20, 2025
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250063796
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Hiroki NEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-FREQUENCY DRAIN-EXTENDED METAL-OXIDE-SEMICONDUCTOR (DEMOS) DEV...
- Publication number 20250056829
- Publication date Feb 13, 2025
- Zhejiang University
- Kai XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD
- Publication number 20250056846
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...
- Publication number 20250056830
- Publication date Feb 13, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250056836
- Publication date Feb 13, 2025
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INT...
- Publication number 20250056833
- Publication date Feb 13, 2025
- QUALCOMM Incorporated
- Taehun KWON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048672
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Shoji TAKEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE
- Publication number 20250048721
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Eung Jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250046758
- Publication date Feb 6, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Takashi OHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20250048673
- Publication date Feb 6, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...
- Publication number 20250048700
- Publication date Feb 6, 2025
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048708
- Publication date Feb 6, 2025
- Kabushiki Kaisha Toshiba
- Taichi FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048722
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Shoji TAKEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250046612
- Publication date Feb 6, 2025
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250046759
- Publication date Feb 6, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Takeshi IMAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20250046649
- Publication date Feb 6, 2025
- DB HiTek Co., Ltd.
- Sang Il HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20250048671
- Publication date Feb 6, 2025
- United Microelectronics Corp.
- Hsuan-Kai Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048685
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Yuji OSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION MASK LAYOUT
- Publication number 20250048712
- Publication date Feb 6, 2025
- SK keyfoundry Inc.
- Yang Beom KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE
- Publication number 20250040180
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040223
- Publication date Jan 30, 2025
- ROHM CO., LTD.
- Masatsugu YUTANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250040230
- Publication date Jan 30, 2025
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiajun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally-Diffused Metal-Oxide Semiconductor Devices with Reduced G...
- Publication number 20250040178
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS

Inverted VDMOS transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Device having increased forward biased safe operating area using so...

Semiconductor device and manufacturing method therefor

Semiconductor device

Semiconductor device and chip singulation method

Shield structure for backside through substrate vias (TSVs)

Shielded gate trench MOSFETs with improved trench terminations and...

LDMOS with field plates

Semiconductor power device

Semiconductor device

Transistor device having a cell field and method of fabricating a g...

Semiconductor device and method of manufacturing the same

Power MOSFET with gate-source ESD diode structure

Silicon carbide semiconductor device and method of manufacturing si...

Semiconductor device and method for manufacturing the same

Gate contact structure for a trench power MOSFET with a split gate...

Semiconductor device

Load switch including back-to-back connected transistors

Semiconductor memory device

Semiconductor device having metal gate and poly gate

Semiconductor device and manufacturing method

Hybrid component with silicon and wide bandgap semconductor material

Semiconductor device and method of manufacturing the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method

Semiconductor doped region with biased isolated members

Lateral double diffused MOS device

Field-effect transistor having improved layout

Semiconductor device and method for designing thereof

Semiconductor device with improved breakdown voltage

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

SIC TRENCH DEVICES HAVING N-TYPE GATE OXIDE SHIELD ZONES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

HIGH-FREQUENCY DRAIN-EXTENDED METAL-OXIDE-SEMICONDUCTOR (DEMOS) DEV...

TRANSISTOR DEVICE AND METHOD

METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INT...

SEMICONDUCTOR DEVICE

SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

SEMICONDUCTOR DEVICE

TRENCH MOSFET AND MANUFACTURING METHOD THEREOF

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

TRANSISTOR STRUCTURE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION MASK LAYOUT

LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Laterally-Diffused Metal-Oxide Semiconductor Devices with Reduced G...