Ion implantation, general

Industry

CPC
Y10S148/083

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/083Ion implantation, general

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a 1-inch diameter glass substrate for a mag...
- Patent number 6,314,764
- Issue date Nov 13, 2001
- Saatec Engineering Corporation
- Yasuaki Sakamoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a 2-5 inch diameter glass substrate for a m...
- Patent number 6,314,763
- Issue date Nov 13, 2001
- Saatec Engineering Corporation
- Yasuaki Sakamoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Surface reforming method of a metal product
- Patent number 6,136,385
- Issue date Oct 24, 2000
- Saatec Engineering Corporation
- Yasuaki Sakamoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Shield assembly for semiconductor wafer supports
- Patent number 5,476,520
- Issue date Dec 19, 1995
- Applied Materials, Inc.
- Peter R. Jaffe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a real time ion implantation metal silicide monitor
- Patent number 5,451,529
- Issue date Sep 19, 1995
- Taiwan Semiconductor Manufacturing Company
- Shun-Liang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanting impurities in semiconductors and semiconductor implanted...
- Patent number 5,294,557
- Issue date Mar 15, 1994
- The United States of America as represented by the Secretary of the Navy
- Frederick G. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,290,709
- Issue date Mar 1, 1994
- NEC Corporation
- Akira Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device, method for producing the s...
- Patent number 5,244,820
- Issue date Sep 14, 1993
- Tadashi Kamata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making solid state device utilizing ion implantation tec...
- Patent number 5,082,793
- Issue date Jan 21, 1992
- Chou H. Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Producing a plasma containing beryllium and beryllium fluoride
- Patent number 5,073,507
- Issue date Dec 17, 1991
- Motorola, Inc.
- Charles T. Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device using a single mask meth...
- Patent number 5,023,191
- Issue date Jun 11, 1991
- Fuji Electric Co., Ltd.
- Kenya Sakurai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping and implanting using arsine, antimony, and phosphi...
- Patent number 4,988,640
- Issue date Jan 29, 1991
- Air Products and Chemicals, Inc.
- David A. Bohling
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ultra-thin semiconductor membranes
- Patent number 4,952,446
- Issue date Aug 28, 1990
- Cornell Research Foundation, Inc.
- Kevin C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin semiconductor membranes
- Patent number 4,946,735
- Issue date Aug 7, 1990
- Cornell Research Foundation, Inc.
- Kevin C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for preventing cross contamination of species...
- Patent number 4,937,206
- Issue date Jun 26, 1990
- Applied Materials, Inc.
- Peter R. Jaffe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering process with multi-step annealing and inert ion implantation
- Patent number 4,885,257
- Issue date Dec 5, 1989
- Kabushiki Kaisha Toshiba
- Yoshiaki Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing an ion-implanted organic resin layer during fab...
- Patent number 4,861,732
- Issue date Aug 29, 1989
- Fujitsu Limited
- Shuzo Fujimura
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for producing thin conductive and semi-conductive layers in...
- Patent number 4,837,174
- Issue date Jun 6, 1989
- Stiftelsen Institutet for Microvagsteknik VID
- Sture Peterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-implant process for forming graded source/drain regions
- Patent number 4,801,555
- Issue date Jan 31, 1989
- Motorola, Inc.
- Patrick J. Holly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the formation of a refractory metal silicide layer on a...
- Patent number 4,777,150
- Issue date Oct 11, 1988
- Centre de La Recherch Scientifique
- Alain Deneuville
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of thermal treatment of a wafer in an evacuated environment
- Patent number 4,743,570
- Issue date May 10, 1988
- Varian Associates, Inc.
- Lawrence T. Lamont
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of preventing hillock formation in polysilicon layer by oxyg...
- Patent number 4,740,481
- Issue date Apr 26, 1988
- Motorola Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming alignment marks in sapphire
- Patent number 4,732,867
- Issue date Mar 22, 1988
- General Electric Company
- George L. Schnable
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of dielectrically isolated devices utilizing buried oxy...
- Patent number 4,676,841
- Issue date Jun 30, 1987
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- George K. Celler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing high quality germanium-germanium nitride inter...
- Patent number 4,671,845
- Issue date Jun 9, 1987
- The United States of America as represented by the Secretary of the Navy
- Max N. Yoder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of implanting uniform concentrations in solids having predet...
- Patent number 4,670,968
- Issue date Jun 9, 1987
- Kabushiki Kaisha Toshiba
- Hitoshi Mikami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Generating high purity ions by non-thermal excimer laser processing
- Patent number 4,670,064
- Issue date Jun 2, 1987
- Eaton Corporation
- Steven R. Schachameyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an imaging array having a higher sensitivity
- Patent number 4,658,497
- Issue date Apr 21, 1987
- RCA Corporation
- Eugene D. Savoye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of simultaneously manufacturing semiconductor regions having...
- Patent number 4,653,176
- Issue date Mar 31, 1987
- U.S. Philips Corporation
- Alfred H. Van Ommen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating solar cells
- Patent number 4,650,695
- Issue date Mar 17, 1987
- Mobil Solar Energy Corporation
- James A. Gregory
- H01 - BASIC ELECTRIC ELEMENTS

Ion implantation, general

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a 1-inch diameter glass substrate for a mag...

Method of manufacturing a 2-5 inch diameter glass substrate for a m...

Surface reforming method of a metal product

Shield assembly for semiconductor wafer supports

Method of making a real time ion implantation metal silicide monitor

Implanting impurities in semiconductors and semiconductor implanted...

Method of manufacturing semiconductor device

Semiconductor integrated circuit device, method for producing the s...

Method for making solid state device utilizing ion implantation tec...

Producing a plasma containing beryllium and beryllium fluoride

Method of producing a semiconductor device using a single mask meth...

Method of doping and implanting using arsine, antimony, and phosphi...

Ultra-thin semiconductor membranes

Ultra-thin semiconductor membranes

Method and apparatus for preventing cross contamination of species...

Gettering process with multi-step annealing and inert ion implantation

Method for removing an ion-implanted organic resin layer during fab...

Method for producing thin conductive and semi-conductive layers in...

Double-implant process for forming graded source/drain regions

Process for the formation of a refractory metal silicide layer on a...

Method of thermal treatment of a wafer in an evacuated environment

Method of preventing hillock formation in polysilicon layer by oxyg...

Method of forming alignment marks in sapphire

Fabrication of dielectrically isolated devices utilizing buried oxy...

Method for producing high quality germanium-germanium nitride inter...

Method of implanting uniform concentrations in solids having predet...

Generating high purity ions by non-thermal excimer laser processing

Method of making an imaging array having a higher sensitivity

Method of simultaneously manufacturing semiconductor regions having...

Method of fabricating solar cells

Patents Applicationslast 30 patents