Joining of crystals

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CPC
C30B33/06

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Current Industry

C30B33/06Joining of crystals

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of producing large GaAs and GaP infrared windows
- Patent number 12,203,191
- Issue date Jan 21, 2025
- BAE Systems Information and Electronic Systems Integration Inc.
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide composite wafer and manufacturing method thereof
- Patent number 12,159,855
- Issue date Dec 3, 2024
- HONG CHUANG APPLIED TECHNOLOGY CO., LTD
- Yan-Kai Zeng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of single-crystal silicon substrate
- Patent number 12,129,570
- Issue date Oct 29, 2024
- Disco Corporation
- Hayato Iga
- C30 - CRYSTAL GROWTH
Information Patent Grant
Pseudo-substrate with improved efficiency of usage of single crysta...
- Patent number 12,112,976
- Issue date Oct 8, 2024
- Soitec
- Fabrice Letertre
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for preparing a single crystal comprising a volatilizatio...
- Patent number 12,098,478
- Issue date Sep 24, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Shujie Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing large EMI shielded GaAs and GaP infrared windows
- Patent number 12,084,791
- Issue date Sep 10, 2024
- BAE Systems Information and Electronic Systems Integration Inc.
- Peter G. Schunemann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Composite having diamond crystal base
- Patent number 12,027,440
- Issue date Jul 2, 2024
- National Institute of Advanced Industrial Science and Technology
- Takashi Matsumae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large scale production of oxidized graphene
- Patent number 12,006,220
- Issue date Jun 11, 2024
- NanoXplore Inc.
- Marie Bozalina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,009,205
- Issue date Jun 11, 2024
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a crystalline layer of PZT material by transfe...
- Patent number 11,877,514
- Issue date Jan 16, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a monocrystalline layer of lithium niobate by...
- Patent number 11,828,000
- Issue date Nov 28, 2023
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing hexagonal semiconductor plate crystal
- Patent number 11,772,301
- Issue date Oct 3, 2023
- Mitsubishi Chemical Corporation
- Hirofumi Uchida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Three-dimensionally stretchable single crystalline semiconductor me...
- Patent number 11,697,889
- Issue date Jul 11, 2023
- International Business Machines Corporation
- Alexander Reznicek
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for producing a layer of solid material
- Patent number 11,699,616
- Issue date Jul 11, 2023
- Siltectra GmbH
- Wolfram Drescher
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of manufacturing diamond substrate, diamond substrate, and d...
- Patent number 11,692,264
- Issue date Jul 4, 2023
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing ring-shaped member and ring-shaped member
- Patent number 11,551,915
- Issue date Jan 10, 2023
- THINKON NEW TECHNOLOGY JAPAN CORPORATION
- Atsushi Ikari
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline ceramic substrate, bonding-layer-including polycrys...
- Patent number 11,545,356
- Issue date Jan 3, 2023
- Sumitomo Electric Industries, Ltd.
- Keiichiro Geshi
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
SiC ingot forming method
- Patent number 11,534,890
- Issue date Dec 27, 2022
- Disco Corporation
- Kazuya Hirata
- B24 - GRINDING POLISHING
Information Patent Grant
Method for producing GaN laminate substrate having front surface wh...
- Patent number 11,479,876
- Issue date Oct 25, 2022
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growth of a merged crystal by bonding at least a first a...
- Patent number 11,453,956
- Issue date Sep 27, 2022
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for growing crystals
- Patent number 11,408,089
- Issue date Aug 9, 2022
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large scale production of oxidized graphene
- Patent number 11,407,643
- Issue date Aug 9, 2022
- NanoXplore Inc.
- Marie Bozalina
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
- Patent number 11,404,268
- Issue date Aug 2, 2022
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of manufacturing engineered substrate structures for power...
- Patent number 11,387,101
- Issue date Jul 12, 2022
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Two-stage seeded growth of large aluminum nitride single crystals
- Patent number 11,384,449
- Issue date Jul 12, 2022
- Crystal IS, Inc.
- Leo J. Schowalter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing diamond, diamond, diamond composite substra...
- Patent number 11,371,139
- Issue date Jun 28, 2022
- Sumitomo Electric Industries, Ltd.
- Yoshiki Nishibayashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Substrate-transferred stacked optical coatings
- Patent number 11,365,492
- Issue date Jun 21, 2022
- Thorlabs, Inc.
- Garrett Cole
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing diamond substrate, diamond substrate, and d...
- Patent number 11,359,275
- Issue date Jun 14, 2022
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTA...
- Publication number 20250022747
- Publication date Jan 16, 2025
- SOITEC
- Fabrice Letertre
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE
- Publication number 20250002354
- Publication date Jan 2, 2025
- NanoXplore Inc.
- Marie BOZALINA
- B82 - NANO-TECHNOLOGY
Information Patent Application
COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
- Publication number 20240426026
- Publication date Dec 26, 2024
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD FOR GROWTH OF QUASI-PHASE MATCHED STRONTIUM TETRA...
- Publication number 20240426021
- Publication date Dec 26, 2024
- KLA Corporation
- Kelly Mauser
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...
- Publication number 20240392476
- Publication date Nov 28, 2024
- SOITEC
- Ionut Radu
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL MATERIAL AND PREPARATION METHOD THEREOF
- Publication number 20240376638
- Publication date Nov 14, 2024
- Huawei Technologies Co., Ltd
- Ruoyu XU
- C01 - INORGANIC CHEMISTRY
Information Patent Application
BONDING NONLINEAR OPTICAL MATERIALS
- Publication number 20240280878
- Publication date Aug 22, 2024
- GAMDAN Optics, Inc.
- William M. Grossman
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
- Publication number 20240183065
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING LARGE-SCALE TWO-DIMENSIONAL SINGLE CRYSTAL STA...
- Publication number 20240183064
- Publication date Jun 6, 2024
- Peking University
- Kaihui LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING LARGE EMI SHIELDED GaAs AND GaP INFRARED WINDOWS
- Publication number 20240183075
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20240117525
- Publication date Apr 11, 2024
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS
- Publication number 20240110307
- Publication date Apr 4, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE BY...
- Publication number 20240044043
- Publication date Feb 8, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A CRYSTALLINE LAYER OF PZT MATERIAL BY TRANSFE...
- Publication number 20230422619
- Publication date Dec 28, 2023
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR TRANSFERRING A USEFUL LAYER OF CRYSTALLINE DIAMOND ONTO...
- Publication number 20230193511
- Publication date Jun 22, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Cédric MASANTE
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20230178367
- Publication date Jun 8, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE
- Publication number 20230062310
- Publication date Mar 2, 2023
- NanoXplore Inc.
- Marie BOZALINA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SINGLE-CRYSTAL SILICON SUBSTRATE
- Publication number 20230054939
- Publication date Feb 23, 2023
- Disco Corporation
- Hayato IGA
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOSTRUCTURES, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE INCLUD...
- Publication number 20220406974
- Publication date Dec 22, 2022
- Samsung Electronics Co., Ltd.
- Seon-Yeong KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICES AND METHODS FOR GROWING CRYSTALS
- Publication number 20220356599
- Publication date Nov 10, 2022
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE SIC ARTICLE
- Publication number 20220341054
- Publication date Oct 27, 2022
- TOKAI CARBON CO., LTD.
- Yuji Ushijima
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20220301855
- Publication date Sep 22, 2022
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of Manufacturing Diamond Substrate, Diamond Substrate, and D...
- Publication number 20220267894
- Publication date Aug 25, 2022
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C01 - INORGANIC CHEMISTRY
Information Patent Application
COMPOSITE HAVING DIAMOND CRYSTAL BASE
- Publication number 20220230934
- Publication date Jul 21, 2022
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Takashi MATSUMAE
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE
- Publication number 20220194799
- Publication date Jun 23, 2022
- NanoXplore Inc.
- Marie BOZALINA
- B82 - NANO-TECHNOLOGY
Information Patent Application
APPARATUS FOR PREPARING LARGE-SIZE SINGLE CRYSTAL
- Publication number 20220074073
- Publication date Mar 10, 2022
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Shujie WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICES AND METHODS FOR GROWING CRYSTALS
- Publication number 20220056612
- Publication date Feb 24, 2022
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GaN LAMINATE SUBSTRATE
- Publication number 20210301419
- Publication date Sep 30, 2021
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED BODY, LASER OSCILLATOR, LASER AMPLIFIER, AND METHOD FOR PROD...
- Publication number 20210296840
- Publication date Sep 23, 2021
- National University Corporation Kitami Institute of Technology
- Hiroaki FURUSE
- H01 - BASIC ELECTRIC ELEMENTS

Joining of crystals

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of producing large GaAs and GaP infrared windows

Silicon carbide composite wafer and manufacturing method thereof

Joined body, laser oscillator, laser amplifier, and joined body man...

Manufacturing method of single-crystal silicon substrate

Pseudo-substrate with improved efficiency of usage of single crysta...

Apparatus for preparing a single crystal comprising a volatilizatio...

Method of producing large EMI shielded GaAs and GaP infrared windows

Composite having diamond crystal base

Large scale production of oxidized graphene

Engineered substrate structures for power and RF applications

Method for producing a crystalline layer of PZT material by transfe...

Method for producing a monocrystalline layer of lithium niobate by...

Conductive C-plane GaN substrate

Method for manufacturing hexagonal semiconductor plate crystal

Three-dimensionally stretchable single crystalline semiconductor me...

Method for producing a layer of solid material

Method of manufacturing diamond substrate, diamond substrate, and d...

Method of manufacturing ring-shaped member and ring-shaped member

Polycrystalline ceramic substrate, bonding-layer-including polycrys...

SiC ingot forming method

Method for producing GaN laminate substrate having front surface wh...

Method for growth of a merged crystal by bonding at least a first a...

Devices and methods for growing crystals

Large scale production of oxidized graphene

Method for growing GaN crystal and c-plane GaN substrate

Methods of manufacturing engineered substrate structures for power...

Two-stage seeded growth of large aluminum nitride single crystals

Method of manufacturing diamond, diamond, diamond composite substra...

Substrate-transferred stacked optical coatings

Method of manufacturing diamond substrate, diamond substrate, and d...

Patents Applicationslast 30 patents

PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTA...

LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE

COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

SYSTEM AND METHOD FOR GROWTH OF QUASI-PHASE MATCHED STRONTIUM TETRA...

METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYS...

CRYSTAL MATERIAL AND PREPARATION METHOD THEREOF

BONDING NONLINEAR OPTICAL MATERIALS

METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS

METHOD FOR PREPARING LARGE-SCALE TWO-DIMENSIONAL SINGLE CRYSTAL STA...

METHOD OF PRODUCING LARGE EMI SHIELDED GaAs AND GaP INFRARED WINDOWS

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME

METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS

CONDUCTIVE C-PLANE GaN SUBSTRATE

METHOD FOR PRODUCING A MONOCRYSTALLINE LAYER OF LITHIUM NIOBATE BY...

METHOD FOR PRODUCING A CRYSTALLINE LAYER OF PZT MATERIAL BY TRANSFE...

METHOD FOR TRANSFERRING A USEFUL LAYER OF CRYSTALLINE DIAMOND ONTO...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE

MANUFACTURING METHOD OF SINGLE-CRYSTAL SILICON SUBSTRATE

NANOSTRUCTURES, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE INCLUD...

DEVICES AND METHODS FOR GROWING CRYSTALS

POLYCRYSTALLINE SIC ARTICLE

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

Method of Manufacturing Diamond Substrate, Diamond Substrate, and D...

COMPOSITE HAVING DIAMOND CRYSTAL BASE

LARGE SCALE PRODUCTION OF OXIDIZED GRAPHENE

APPARATUS FOR PREPARING LARGE-SIZE SINGLE CRYSTAL

DEVICES AND METHODS FOR GROWING CRYSTALS

METHOD FOR PRODUCING GaN LAMINATE SUBSTRATE

BONDED BODY, LASER OSCILLATOR, LASER AMPLIFIER, AND METHOD FOR PROD...