Lateral isolation by field effect

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CPC
H01L21/76291

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/76291Lateral isolation by field effect

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Patents Grantslast 30 patents

Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 12,125,923
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 10,971,632
- Issue date Apr 6, 2021
- Semiconductor Components Industries, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having isolating region for suppressing electr...
- Patent number 6,646,319
- Issue date Nov 11, 2003
- Denso Corporation
- Hirokazu Itakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,436,792
- Issue date Aug 20, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,407,432
- Issue date Jun 18, 2002
- Hitachi, Ltd.
- Minehiro Nemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination of walkout in high voltage trench isolated devices
- Patent number 6,362,064
- Issue date Mar 26, 2002
- National Semiconductor Corporation
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an SOI structure
- Patent number 6,310,377
- Issue date Oct 30, 2001
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI Semiconductor device with field shield electrode
- Patent number 6,242,786
- Issue date Jun 5, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Yoshiki Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an SOI structure
- Patent number 5,808,341
- Issue date Sep 15, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory and semiconductor device having SOI structure
- Patent number 5,773,865
- Issue date Jun 30, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Hideto Hidaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory and semiconductor device having SOI structure
- Patent number 5,635,744
- Issue date Jun 3, 1997
- Mitsubushi Denki Kabushiki Kaisha
- Hideto Hidaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3678347
- Patent number 3,678,347
- Issue date Jul 18, 1972
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH
- Publication number 20210193847
- Publication date Jun 24, 2021
- Semiconductor Components Industries, LLC
- Jaroslav PJENCAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH
- Publication number 20200403103
- Publication date Dec 24, 2020
- Semiconductor Components Industries, LLC
- Jaroslav PJENCAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having isolating region for suppressing electr...
- Publication number 20030001224
- Publication date Jan 2, 2003
- Hirokazu Itakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES
- Publication number 20010023974
- Publication date Sep 27, 2001
- JOEL M. MCGREGOR
- H01 - BASIC ELECTRIC ELEMENTS

Lateral isolation by field effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High voltage diode on SOI substrate with trench-modified current path

High voltage diode on SOI substrate with trench-modified current path

Semiconductor device having isolating region for suppressing electr...

Method of manufacturing semiconductor device

Semiconductor device

Elimination of walkout in high voltage trench isolated devices

Semiconductor device having an SOI structure

SOI Semiconductor device with field shield electrode

Semiconductor device having an SOI structure

Semiconductor memory and semiconductor device having SOI structure

Semiconductor memory and semiconductor device having SOI structure

3678347

Patents Applicationslast 30 patents

HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH

HIGH VOLTAGE DIODE ON SOI SUBSTRATE WITH TRENCH-MODIFIED CURRENT PATH

Semiconductor device having isolating region for suppressing electr...

ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES