Lateral isolation by refilling of trenches with polycristalline material

Industry

CPC
H01L21/76286

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76286Lateral isolation by refilling of trenches with polycristalline material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Selective polysilicon growth for deep trench polysilicon isolation...
- Patent number 12,148,756
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation with field oxide
- Patent number 12,087,813
- Issue date Sep 10, 2024
- Texas Instruments Incorporated
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising a substrate equipped with a trap-rich...
- Patent number 11,978,710
- Issue date May 7, 2024
- STMicroelectronics (Crolles 2) SAS
- Didier Dutartre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,791,198
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer isolation structure for high voltage silicon-on-insulato...
- Patent number 11,682,578
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective polysilicon growth for deep trench polysilicon isolation...
- Patent number 11,594,597
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for gapfill in high aspect ratio structures
- Patent number 11,488,856
- Issue date Nov 1, 2022
- Applied Materials, Inc.
- Pramit Manna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,302,568
- Issue date Apr 12, 2022
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sealed cavity structures with a planar surface
- Patent number 11,107,884
- Issue date Aug 31, 2021
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising a substrate equipped with a trap-rich...
- Patent number 11,075,177
- Issue date Jul 27, 2021
- STMicroelectronics (Crolles 2) SAS
- Didier Dutartre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor isolation structures comprising shallow trench and de...
- Patent number 11,049,932
- Issue date Jun 29, 2021
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for gapfill in high aspect ratio structures
- Patent number 10,811,303
- Issue date Oct 20, 2020
- Applied Materials, Inc.
- Pramit Manna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with improved resistive region
- Patent number 10,770,357
- Issue date Sep 8, 2020
- STMicroelectronics (Crolles 2) SAS
- Benoît Froment
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with airgap
- Patent number 10,692,753
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Mark D. Jaffe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local trap-rich isolation
- Patent number 10,446,435
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with improved resistive region
- Patent number 10,354,926
- Issue date Jul 16, 2019
- STMicroelectronics (Crolles 2) SAS
- Benoît Froment
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable charge trapping layer for use in manufacture of se...
- Patent number 10,290,533
- Issue date May 14, 2019
- GlobalWafers Co., Ltd.
- Alex Usenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with airgap
- Patent number 10,211,087
- Issue date Feb 19, 2019
- International Business Machines Corporation
- Mark D. Jaffe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for gapfill in high aspect ratio structures
- Patent number 10,192,775
- Issue date Jan 29, 2019
- Applied Materials, Inc.
- Pramit Manna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with 110-PFET and 111-NFET current f...
- Patent number 10,177,169
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local trap-rich isolation
- Patent number 9,991,155
- Issue date Jun 5, 2018
- GLOBALFOUNDRIES, INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing trench isolation structure
- Patent number 9,972,525
- Issue date May 15, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Hua Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with 110-PFET and 111-NFET current f...
- Patent number 9,947,689
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a semiconductor body with a cutout
- Patent number 9,923,072
- Issue date Mar 20, 2018
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with airgap
- Patent number 9,917,005
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Mark D. Jaffe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrates with buried isolation layers and methods of formation th...
- Patent number 9,875,926
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Iris Moder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device isolation structure and manufacture method
- Patent number 9,653,344
- Issue date May 16, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Guangli Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method providing an epitaxial growth having a reduction in defects...
- Patent number 9,356,096
- Issue date May 31, 2016
- Micron Technology, Inc.
- Song Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and methods for producing a semiconductor c...
- Patent number 9,275,895
- Issue date Mar 1, 2016
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method providing an epitaxial growth having a reduction in defects...
- Patent number 9,099,309
- Issue date Aug 4, 2015
- Micron Technology, Inc.
- Song Guo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...
- Publication number 20240379684
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH...
- Publication number 20240274552
- Publication date Aug 15, 2024
- STMicroelectronics (Crolles 2) SAS
- Didier DUTARTRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...
- Publication number 20240088157
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER ISOLATION STRUCTURE FOR HIGH VOLTAGE SILICON-ON-INSULATO...
- Publication number 20230326787
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT
- Publication number 20230069862
- Publication date Mar 9, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Thibaud FACHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION WITH FIELD OXIDE
- Publication number 20230060695
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...
- Publication number 20220352308
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20220208601
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SPREADING ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20220189821
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Isolation Structure for High Voltage Silicon-On-Insulato...
- Publication number 20220037199
- Publication date Feb 3, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH...
- Publication number 20210327834
- Publication date Oct 21, 2021
- STMicroelectronics (Crolles 2) SAS
- Didier DUTARTRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...
- Publication number 20210126089
- Publication date Apr 29, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Gapfill In High Aspect Ratio Structures
- Publication number 20210028055
- Publication date Jan 28, 2021
- Applied Materials, Inc.
- Pramit Manna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELD ISOLATION LAYER
- Publication number 20200312710
- Publication date Oct 1, 2020
- TEXAS INSTRUMENTS INCORPORATED
- HONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ISOLATION STRUCTURES AND METHODS OF FORMING SAME
- Publication number 20200203478
- Publication date Jun 25, 2020
- GLOBALFOUNDRIES INC.
- STEVEN M. SHANK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH IMPROVED RESISTIVE REGION
- Publication number 20190287862
- Publication date Sep 19, 2019
- STMicroelectronics (Crolles 2) SAS
- Benoît Froment
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH...
- Publication number 20190267335
- Publication date Aug 29, 2019
- STMicroelectronics (Crolles 2) SAS
- Didier DUTARTRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods For Gapfill In High Aspect Ratio Structures
- Publication number 20190157134
- Publication date May 23, 2019
- Applied Materials, Inc.
- Pramit Manna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIRGAP
- Publication number 20190139819
- Publication date May 9, 2019
- International Business Machines Corporation
- Mark D. JAFFE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAP-RICH ISOLATION
- Publication number 20180233401
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES, Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAP-RICH ISOLATION
- Publication number 20180096884
- Publication date Apr 5, 2018
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIRGAP
- Publication number 20180068887
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Mark D. JAFFE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE CHARGE TRAPPING LAYER FOR USE IN MANUFACTURE OF SE...
- Publication number 20180047614
- Publication date Feb 15, 2018
- SUNEDISON SEMICONDUCTOR LIMITED
- Alex Usenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIRGAP
- Publication number 20170170056
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Mark D. JAFFE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structure With 110-PFET and 111-NFET Current F...
- Publication number 20170125446
- Publication date May 4, 2017
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD PROVIDING AN EPITAXIAL GROWTH HAVING A REDUCTION IN DEFECTS...
- Publication number 20150108600
- Publication date Apr 23, 2015
- Micron Technology, Inc.
- Song Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having a Semiconductor Body with a Cutout
- Publication number 20140299933
- Publication date Oct 9, 2014
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR C...
- Publication number 20140141608
- Publication date May 22, 2014
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a structure element and semiconductor componen...
- Publication number 20120068260
- Publication date Mar 22, 2012
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR C...
- Publication number 20110256688
- Publication date Oct 20, 2011
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS

Lateral isolation by refilling of trenches with polycristalline material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Selective polysilicon growth for deep trench polysilicon isolation...

Deep trench isolation with field oxide

Integrated circuit comprising a substrate equipped with a trap-rich...

Trench shield isolation layer

Multilayer isolation structure for high voltage silicon-on-insulato...

Selective polysilicon growth for deep trench polysilicon isolation...

Methods for gapfill in high aspect ratio structures

Trench shield isolation layer

Sealed cavity structures with a planar surface

Integrated circuit comprising a substrate equipped with a trap-rich...

Semiconductor isolation structures comprising shallow trench and de...

Methods for gapfill in high aspect ratio structures

Integrated circuit with improved resistive region

Semiconductor structure with airgap

Local trap-rich isolation

Integrated circuit with improved resistive region

Thermally stable charge trapping layer for use in manufacture of se...

Semiconductor structure with airgap

Methods for gapfill in high aspect ratio structures

Semiconductor device structure with 110-PFET and 111-NFET current f...

Local trap-rich isolation

Method for preparing trench isolation structure

Semiconductor device structure with 110-PFET and 111-NFET current f...

Semiconductor component having a semiconductor body with a cutout

Semiconductor structure with airgap

Substrates with buried isolation layers and methods of formation th...

Device isolation structure and manufacture method

Method providing an epitaxial growth having a reduction in defects...

Semiconductor component and methods for producing a semiconductor c...

Method providing an epitaxial growth having a reduction in defects...

Patents Applicationslast 30 patents

SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...

INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH...

SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...

MULTILAYER ISOLATION STRUCTURE FOR HIGH VOLTAGE SILICON-ON-INSULATO...

METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT

DEEP TRENCH ISOLATION WITH FIELD OXIDE

SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...

TRENCH SHIELD ISOLATION LAYER

HEAT SPREADING ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICES

Multilayer Isolation Structure for High Voltage Silicon-On-Insulato...

INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH...

SELECTIVE POLYSILICON GROWTH FOR DEEP TRENCH POLYSILICON ISOLATION...

Methods For Gapfill In High Aspect Ratio Structures

TRENCH SHIELD ISOLATION LAYER

SEMICONDUCTOR ISOLATION STRUCTURES AND METHODS OF FORMING SAME

INTEGRATED CIRCUIT WITH IMPROVED RESISTIVE REGION

INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH...

Methods For Gapfill In High Aspect Ratio Structures

SEMICONDUCTOR STRUCTURE WITH AIRGAP

LOCAL TRAP-RICH ISOLATION

LOCAL TRAP-RICH ISOLATION

SEMICONDUCTOR STRUCTURE WITH AIRGAP

THERMALLY STABLE CHARGE TRAPPING LAYER FOR USE IN MANUFACTURE OF SE...

SEMICONDUCTOR STRUCTURE WITH AIRGAP

Semiconductor Device Structure With 110-PFET and 111-NFET Current F...

METHOD PROVIDING AN EPITAXIAL GROWTH HAVING A REDUCTION IN DEFECTS...

Semiconductor Component Having a Semiconductor Body with a Cutout

SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR C...

Method for producing a structure element and semiconductor componen...

SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR C...