Lateral isolation by selective oxidation of silicon

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H01L21/76281

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/76281Lateral isolation by selective oxidation of silicon

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Patents Grantslast 30 patents

Information Patent Grant
High voltage device and manufacturing method thereof
- Patent number 12,062,570
- Issue date Aug 13, 2024
- Richtek Technology Corporation
- Kun-Huang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,600,577
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 11,456,354
- Issue date Sep 27, 2022
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break device for FDSOI
- Patent number 10,957,578
- Issue date Mar 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 10,886,164
- Issue date Jan 5, 2021
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 10,811,255
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a buried cavity structure
- Patent number 10,784,147
- Issue date Sep 22, 2020
- Infineon Technologies AG
- Ines Uhlig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extremely thin silicon-on-insulator silicon germanium device withou...
- Patent number 10,658,387
- Issue date May 19, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 10,374,035
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extremely thin silicon-on-insulator silicon germanium device withou...
- Patent number 10,340,292
- Issue date Jul 2, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nanosheet with dielectric isolation
- Patent number 10,312,323
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of silicon oxide films
- Patent number 10,176,980
- Issue date Jan 8, 2019
- Applied Materials, Inc.
- Pramit Manna
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bipolar mobile electrostatic carriers for wafer processing
- Patent number 9,997,389
- Issue date Jun 12, 2018
- Tesla, Inc.
- Mehrdad M. Moslehi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Process for fabricating a structure having a buried dielectric laye...
- Patent number 9,929,040
- Issue date Mar 27, 2018
- Soitec
- Carole David
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrates with buried isolation layers and methods of formation th...
- Patent number 9,875,926
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Iris Moder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 9,865,498
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk finFET with partial dielectric isolation featuring a punch-thr...
- Patent number 9,842,897
- Issue date Dec 12, 2017
- GLOBALFOUNDRIES Inc.
- Murat K. Akarvardar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extremely thin silicon-on-insulator silicon germanium device withou...
- Patent number 9,659,960
- Issue date May 23, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor layers including transistor ch...
- Patent number 9,576,798
- Issue date Feb 21, 2017
- Soitec
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die, integrated circuits and driver circuits, and met...
- Patent number 9,570,437
- Issue date Feb 14, 2017
- NXP B.V.
- Priscilla Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 9,472,571
- Issue date Oct 18, 2016
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized region of isolated silicon over recessed dielectric layer
- Patent number 9,466,520
- Issue date Oct 11, 2016
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin on local oxide
- Patent number 9,035,430
- Issue date May 19, 2015
- International Business Machines Corporation
- Reinaldo A. Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a buried dielectric layer underneath a semicondu...
- Patent number 8,835,278
- Issue date Sep 16, 2014
- IMEC
- Gouri Sankar Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering method for dielectrically isolated devices
- Patent number 8,664,746
- Issue date Mar 4, 2014
- STMicroelectronics Pte Ltd
- Janusz Karol Korycinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high-breakdown-voltage transistor
- Patent number 8,436,419
- Issue date May 7, 2013
- Denso Corporation
- Akira Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of gallium nitride and silicon devices and c...
- Patent number 8,242,510
- Issue date Aug 14, 2012
- Intersil Americas Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high-breakdown-voltage transistor
- Patent number 8,097,921
- Issue date Jan 17, 2012
- Denso Corporation
- Akira Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,030,730
- Issue date Oct 4, 2011
- Renesas Electronics Corporation
- Tetsuya Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high topography patterning
- Patent number 8,021,989
- Issue date Sep 20, 2011
- IMEC
- Staf Verhaegen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240297067
- Publication date Sep 5, 2024
- RICHTEK TECHNOLOGY CORPORATION
- Kun-Huang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FABRICATION PROCESS
- Publication number 20230378002
- Publication date Nov 23, 2023
- X-FAB France SAS
- Nicolas PONS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk Nanosheet with Dielectric Isolation
- Publication number 20230197781
- Publication date Jun 22, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SeOI INTEGRATED CIRCUIT CHIP
- Publication number 20230170264
- Publication date Jun 1, 2023
- SOITEC
- Trong Hyunh-Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220223464
- Publication date Jul 14, 2022
- RICHTEK TECHNOLOGY CORPORATION
- Kun-Huang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS...
- Publication number 20220076993
- Publication date Mar 10, 2022
- SOITEC
- Yvan Morandini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS
- Publication number 20220076992
- Publication date Mar 10, 2022
- SOITEC
- Yvan Morandini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20210043454
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT COMPRISING ELECTRICAL INSULATION TRENCHES
- Publication number 20210028056
- Publication date Jan 28, 2021
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- Adrien Gasse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAK DEVICE FOR FDSOI
- Publication number 20200105584
- Publication date Apr 2, 2020
- GLOBALFOUNDRIES INC.
- Wei HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk Nanosheet with Dielectric Isolation
- Publication number 20190312104
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A BURIED CAVITY STRUCTURE
- Publication number 20190027399
- Publication date Jan 24, 2019
- INFINEON TECHNOLOGIES AG
- Ines Uhlig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREMELY THIN SILICON-ON-INSULATOR SILICON GERMANIUM DEVICE WITHOU...
- Publication number 20190019811
- Publication date Jan 17, 2019
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Semiconductor Layer Over Buried Isolation Layer
- Publication number 20180096882
- Publication date Apr 5, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREMELY THIN SILICON-ON-INSULATOR SILICON GERMANIUM DEVICE WITHOU...
- Publication number 20170170195
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20170069550
- Publication date Mar 9, 2017
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Semiconductor Layer Over Buried Isolation Layer
- Publication number 20160379866
- Publication date Dec 29, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR MOBILE ELECTROSTATIC CARRIERS FOR WAFER PROCESSING
- Publication number 20160358802
- Publication date Dec 8, 2016
- SOLEXEL, INC.
- Mehrdad M. Moslehi
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
PROCESS FOR FABRICATING A STRUCTURE HAVING A BURIED DIELECTRIC LAYE...
- Publication number 20160293476
- Publication date Oct 6, 2016
- SOITEC
- Carole David
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI WAFER FABRICATION METHOD AND SOI WAFER
- Publication number 20160148834
- Publication date May 26, 2016
- Toyota Jidosha Kabushiki Kaisha
- Tetsuya Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR LAYERS INCLUDING TRANSISTOR CH...
- Publication number 20160086803
- Publication date Mar 24, 2016
- SOITEC
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX USING SELECTIVE...
- Publication number 20150348827
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Solomon Assefa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED REGION OF ISOLATED SILICON OVER RECESSED DIELECTRIC LAYER
- Publication number 20150294901
- Publication date Oct 15, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED SEMICONDUCTOR LAYER OVER BURIED ISOLATION LAYER
- Publication number 20150294983
- Publication date Oct 15, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ON LOCAL OXIDE
- Publication number 20150044843
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Michael V. AQUILINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS INTEGRATING DIFFERENT FIN DEVICE ARCHITECTURES
- Publication number 20150021709
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES INC.
- Ajey P. JACOB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR INTEGRATED CIRCUITS WITH LOCAL OXIDATION OF SI...
- Publication number 20140332887
- Publication date Nov 13, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shaoqiang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140203365
- Publication date Jul 24, 2014
- NXP B.V.
- Priscilla Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX LATERAL EPITAXI...
- Publication number 20140127877
- Publication date May 8, 2014
- International Business Machines Corporation
- Solomon Assefa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX USING SELECTIVE...
- Publication number 20140127878
- Publication date May 8, 2014
- International Business Machines Corporation
- Solomon Assefa
- H01 - BASIC ELECTRIC ELEMENTS

Lateral isolation by selective oxidation of silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High voltage device and manufacturing method thereof

Semiconductor devices

Bulk nanosheet with dielectric isolation

Single diffusion break device for FDSOI

Isolated semiconductor layer over buried isolation layer

Methods of forming semiconductor devices

Method for producing a buried cavity structure

Extremely thin silicon-on-insulator silicon germanium device withou...

Bulk nanosheet with dielectric isolation

Extremely thin silicon-on-insulator silicon germanium device withou...

Bulk nanosheet with dielectric isolation

Selective deposition of silicon oxide films

Bipolar mobile electrostatic carriers for wafer processing

Process for fabricating a structure having a buried dielectric laye...

Substrates with buried isolation layers and methods of formation th...

Isolated semiconductor layer over buried isolation layer

Bulk finFET with partial dielectric isolation featuring a punch-thr...

Extremely thin silicon-on-insulator silicon germanium device withou...

Method for fabricating semiconductor layers including transistor ch...

Semiconductor die, integrated circuits and driver circuits, and met...

Isolated semiconductor layer over buried isolation layer

Localized region of isolated silicon over recessed dielectric layer

Semiconductor fin on local oxide

Method for forming a buried dielectric layer underneath a semicondu...

Gettering method for dielectrically isolated devices

Semiconductor device with high-breakdown-voltage transistor

Monolithic integration of gallium nitride and silicon devices and c...

Semiconductor device with high-breakdown-voltage transistor

Semiconductor device and manufacturing method thereof

Method for high topography patterning

Patents Applicationslast 30 patents

HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR FABRICATION PROCESS

Bulk Nanosheet with Dielectric Isolation

METHOD FOR MANUFACTURING A SeOI INTEGRATED CIRCUIT CHIP

HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS...

SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS

SEMICONDUCTOR DEVICES

ELECTRONIC CIRCUIT COMPRISING ELECTRICAL INSULATION TRENCHES

SINGLE DIFFUSION BREAK DEVICE FOR FDSOI

Bulk Nanosheet with Dielectric Isolation

METHOD FOR PRODUCING A BURIED CAVITY STRUCTURE

EXTREMELY THIN SILICON-ON-INSULATOR SILICON GERMANIUM DEVICE WITHOU...

Isolated Semiconductor Layer Over Buried Isolation Layer

EXTREMELY THIN SILICON-ON-INSULATOR SILICON GERMANIUM DEVICE WITHOU...

METHOD OF FORMING A SEMICONDUCTOR DEVICE

Isolated Semiconductor Layer Over Buried Isolation Layer

BIPOLAR MOBILE ELECTROSTATIC CARRIERS FOR WAFER PROCESSING

PROCESS FOR FABRICATING A STRUCTURE HAVING A BURIED DIELECTRIC LAYE...

SOI WAFER FABRICATION METHOD AND SOI WAFER

METHOD FOR FABRICATING SEMICONDUCTOR LAYERS INCLUDING TRANSISTOR CH...

FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX USING SELECTIVE...

LOCALIZED REGION OF ISOLATED SILICON OVER RECESSED DIELECTRIC LAYER

ISOLATED SEMICONDUCTOR LAYER OVER BURIED ISOLATION LAYER

SEMICONDUCTOR FIN ON LOCAL OXIDE

STRUCTURES AND METHODS INTEGRATING DIFFERENT FIN DEVICE ARCHITECTURES

SILICON-ON-INSULATOR INTEGRATED CIRCUITS WITH LOCAL OXIDATION OF SI...

SEMICONDUCTOR DEVICE

FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX LATERAL EPITAXI...

FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX USING SELECTIVE...