Lateral overgrowth

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H01L21/02647

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02647Lateral overgrowth

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three dimensional integrated circuit and fabrication thereof
- Patent number 12,211,789
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing a substrate with a cleaving technique
- Patent number 12,205,847
- Issue date Jan 21, 2025
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate control for trench shaped thin film transistors
- Patent number 12,191,395
- Issue date Jan 7, 2025
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure with controllable channel length by forming lightl...
- Patent number 12,183,822
- Issue date Dec 31, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor structure with semiconductor-on-insulator region and...
- Patent number 12,131,904
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,125,938
- Issue date Oct 22, 2024
- Azur Space Solar Power GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor device, and...
- Patent number 12,100,936
- Issue date Sep 24, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Toshiyuki Takizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor element, semiconductor elemen...
- Patent number 12,065,760
- Issue date Aug 20, 2024
- Kyocera Corporation
- Masahiro Araki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of removing a substrate
- Patent number 12,046,695
- Issue date Jul 23, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturable large area gallium and nitrogen containin...
- Patent number 11,949,212
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an optoelectronic semiconductor chip and optoe...
- Patent number 11,888,083
- Issue date Jan 30, 2024
- Osram Opto Semiconductors GmbH
- Werner Bergbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a planar III-N semiconductor layer and...
- Patent number 11,862,459
- Issue date Jan 2, 2024
- HEXAGEM AB
- Jonas Ohlsson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dual gate control for trench shaped thin film transistors
- Patent number 11,862,728
- Issue date Jan 2, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Three dimensional integrated circuit and fabrication thereof
- Patent number 11,784,119
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a metastable crystalline structure which is a 2-...
- Patent number 11,756,788
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Philipp Staudinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor layers
- Patent number 11,735,418
- Issue date Aug 22, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
- Patent number 11,721,549
- Issue date Aug 8, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride substrate, method of making, and method of use
- Patent number 11,705,322
- Issue date Jul 18, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating a heterostructure comprising active or passi...
- Patent number 11,698,488
- Issue date Jul 11, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N nanostructures formed via cavity fill
- Patent number 11,670,686
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high mobility complementary metal-oxide-semicondu...
- Patent number 11,637,041
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor structures
- Patent number 11,616,344
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Noelia Vico Trivino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer random access memory and methods of manufacture
- Patent number 11,605,636
- Issue date Mar 14, 2023
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of generating a germanium structure and optical device compr...
- Patent number 11,594,654
- Issue date Feb 28, 2023
- Infineon Technologies AG
- Andre Roeth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with semiconductor-on-insulator region and...
- Patent number 11,515,158
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing a substrate with a cleaving technique
- Patent number 11,508,620
- Issue date Nov 22, 2022
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
- Publication number 20240395698
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240234141
- Publication date Jul 11, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...
- Publication number 20240191391
- Publication date Jun 13, 2024
- KYOCERA CORPORATION
- Toshihiro KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE...
- Publication number 20240145622
- Publication date May 2, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240136181
- Publication date Apr 25, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240071761
- Publication date Feb 29, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS
- Publication number 20240055531
- Publication date Feb 15, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
- Publication number 20230378056
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
- Publication number 20230317444
- Publication date Oct 5, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUB...
- Publication number 20230193507
- Publication date Jun 22, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...
- Publication number 20230197446
- Publication date Jun 22, 2023
- KYOCERA CORPORATION
- Katsunori AZUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION
- Publication number 20230134459
- Publication date May 4, 2023
- AZUR SPACE SOLAR POWER GMBH
- Armin DADGAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Semiconductor Layers
- Publication number 20230135654
- Publication date May 4, 2023
- Nippon Telegraph and Telephone Corporation
- Ryo Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING A DEVICE USING AN EPITAXIAL LATERAL OVERGROWTH...
- Publication number 20230127257
- Publication date Apr 27, 2023
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SEMICONDUCTOR-ON-INSULATOR REGION AND...
- Publication number 20230125584
- Publication date Apr 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ramsey Hazbun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION
- Publication number 20230041323
- Publication date Feb 9, 2023
- AZUR SPACE SOLAR POWER GMBH
- Armin DADGAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION
- Publication number 20230039863
- Publication date Feb 9, 2023
- AZUR SPACE SOLAR POWER GMBH
- Armin DADGAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION
- Publication number 20230028392
- Publication date Jan 26, 2023
- AZUR SPACE SOLAR POWER GMBH
- Armin DADGAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...
- Publication number 20230022774
- Publication date Jan 26, 2023
- KYOCERA CORPORATION
- Katsunori AZUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REMOVING A SUBSTRATE WITH A CLEAVING TECHNIQUE
- Publication number 20230005793
- Publication date Jan 5, 2023
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing an Optoelectronic Semiconductor Chip and Optoe...
- Publication number 20220344532
- Publication date Oct 27, 2022
- Osram Opto Semiconductors GmbH
- Werner Bergbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
- Publication number 20220319982
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET STRUCTURE WITH CONTROLLABLE CHANNEL LENGTH BY FORMING LIGHTL...
- Publication number 20220320336
- Publication date Oct 6, 2022
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM-GALLIUM-NITRIDE STRUCTURES AND DEVICES
- Publication number 20220285505
- Publication date Sep 8, 2022
- OPNOVIX CORP
- MICHAEL R. KRAMES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE
- Publication number 20220246444
- Publication date Aug 4, 2022
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUBSTRATE FOR REMOVAL OF DEVICES USING VOID PORTIONS
- Publication number 20220165570
- Publication date May 26, 2022
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL GROWTH METHOD AND A SUBSTRATE FOR A SEMICONDUCTOR DEVICE
- Publication number 20220122839
- Publication date Apr 21, 2022
- Kyocera Corporation
- Takehiro NISHIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING A NON-POLAR A-PLANE GALLIUM NITRIDE USING ALUMIN...
- Publication number 20220122836
- Publication date Apr 21, 2022
- COLLABORATIVE RESEARCHIN ENGINEERING, SCIENCE AND TECHNOLOGY CENTER
- Anas BIN KAMARUNDZAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF METASTABLE CRYSTALLINE STRUCTURES
- Publication number 20220013355
- Publication date Jan 13, 2022
- International Business Machines Corporation
- Philipp Staudinger
- H01 - BASIC ELECTRIC ELEMENTS

Lateral overgrowth

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three dimensional integrated circuit and fabrication thereof

Method of removing a substrate with a cleaving technique

Dual gate control for trench shaped thin film transistors

MOSFET structure with controllable channel length by forming lightl...

Incorporating semiconductors on a polycrystalline diamond substrate

Crystal growth method and a substrate for a semiconductor device

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Semiconductor structure with semiconductor-on-insulator region and...

Nitride semiconductor component and process for its production

Nitride semiconductor structure, nitride semiconductor device, and...

Method of manufacturing semiconductor element, semiconductor elemen...

Method of removing a substrate

Method for manufacturable large area gallium and nitrogen containin...

Method for producing an optoelectronic semiconductor chip and optoe...

Semiconductor device having a planar III-N semiconductor layer and...

Dual gate control for trench shaped thin film transistors

Conductive C-plane GaN substrate

Three dimensional integrated circuit and fabrication thereof

Method for growing a metastable crystalline structure which is a 2-...

Method for forming semiconductor layers

Large area group III nitride crystals and substrates, methods of ma...

Group III nitride substrate, method of making, and method of use

Method for fabricating a heterostructure comprising active or passi...

III-N nanostructures formed via cavity fill

Method of forming high mobility complementary metal-oxide-semicondu...

Fabrication of semiconductor structures

Multi-layer random access memory and methods of manufacture

Method of generating a germanium structure and optical device compr...

Semiconductor structure with semiconductor-on-insulator region and...

Method of removing a substrate with a cleaving technique

Patents Applicationslast 30 patents

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...

TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE...

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

CONDUCTIVE C-PLANE GaN SUBSTRATE

SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

DUAL GATE CONTROL FOR TRENCH SHAPED THIN FILM TRANSISTORS

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUB...

MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...

NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION

Method for Forming Semiconductor Layers

METHOD FOR REMOVING A DEVICE USING AN EPITAXIAL LATERAL OVERGROWTH...

SEMICONDUCTOR STRUCTURE WITH SEMICONDUCTOR-ON-INSULATOR REGION AND...

NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION

NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION

NITRIDE SEMICONDUCTOR COMPONENT AND PROCESS FOR ITS PRODUCTION

MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...

METHOD OF REMOVING A SUBSTRATE WITH A CLEAVING TECHNIQUE

Method for Producing an Optoelectronic Semiconductor Chip and Optoe...

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

MOSFET STRUCTURE WITH CONTROLLABLE CHANNEL LENGTH BY FORMING LIGHTL...

INDIUM-GALLIUM-NITRIDE STRUCTURES AND DEVICES

INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE

SUBSTRATE FOR REMOVAL OF DEVICES USING VOID PORTIONS

CRYSTAL GROWTH METHOD AND A SUBSTRATE FOR A SEMICONDUCTOR DEVICE

METHOD FOR GROWING A NON-POLAR A-PLANE GALLIUM NITRIDE USING ALUMIN...

FABRICATION OF METASTABLE CRYSTALLINE STRUCTURES