Lateral transistor

Industry

CPC
Y10S148/096

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/096Lateral transistor

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Lateral double diffused insulated gate field effect transistor and...
- Patent number 5,578,514
- Issue date Nov 26, 1996
- Texas Instruments Incorporated
- Oh-Kyong Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with reduced projective area of source region
- Patent number 5,508,547
- Issue date Apr 16, 1996
- United Microelectronics Corp.
- Sheng-Hsing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with increased breakdown voltage
- Patent number 5,493,149
- Issue date Feb 20, 1996
- National Semiconductor Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing an LDMOS transistor having reduced dimensions,...
- Patent number 5,466,616
- Issue date Nov 14, 1995
- United Microelectronics Corp.
- Sheng-Hsing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resurf lateral double diffused insulated gate field effect transistor
- Patent number 5,406,110
- Issue date Apr 11, 1995
- Texas Instruments Incorporated
- Oh-Kyong Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a lateral bipolar transistor with dual collector...
- Patent number 5,387,553
- Issue date Feb 7, 1995
- International Business Machines Corporation
- Tor W. Moksvold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating lateral bipolar transistors
- Patent number 5,360,750
- Issue date Nov 1, 1994
- United Microelectronics Corp.
- Sheng-Hsing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 5,358,883
- Issue date Oct 25, 1994
- Motorola, Inc.
- Wayne R. Burger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor with insulating trenches
- Patent number 5,323,057
- Issue date Jun 21, 1994
- International Business Machines Corporation
- Robert K. Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double diffused insulated gate field effect transistor fabr...
- Patent number 5,306,652
- Issue date Apr 26, 1994
- Texas Instruments Incorporated
- Oh-Kyong Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of transistor device with increased breakdown...
- Patent number 5,298,440
- Issue date Mar 29, 1994
- National Semiconductor Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high performance lateral PNP transistor with buri...
- Patent number 5,198,376
- Issue date Mar 30, 1993
- International Business Machines Corporation
- Sridhar Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor and method of making the same
- Patent number 5,187,109
- Issue date Feb 16, 1993
- International Business Machines Corporation
- Robert K. Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VLSI bipolar transistor process
- Patent number 5,036,016
- Issue date Jul 30, 1991
- Bipolar Integrated Technology, Inc.
- Robert M. Drosd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming lateral PNP transistor
- Patent number 4,996,164
- Issue date Feb 26, 1991
- International Business Machines Corporation
- Peter A. Habitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,981,806
- Issue date Jan 1, 1991
- U.S. Philips Corporation
- Henricus G. R. Maas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of bipolar transistor
- Patent number 4,978,630
- Issue date Dec 18, 1990
- Samsung Semiconductor & Telecommunication Co., Ltd.
- Myung S. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making a lateral bipolar transistor in a standard CSAG...
- Patent number 4,669,177
- Issue date Jun 2, 1987
- Texas Instruments Incorporated
- Sebastiano D'Arrigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing NPN type lateral transistor with minimal subs...
- Patent number 4,437,226
- Issue date Mar 20, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing lateral transistor separated from substrate by...
- Patent number 4,435,899
- Issue date Mar 13, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device using at least two sorts...
- Patent number 3,977,920
- Issue date Aug 31, 1976
- Hitachi, Ltd.
- Ichiro Imaizumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary bipolar transistors having collector diffused isolation
- Patent number 3,971,059
- Issue date Jul 20, 1976
- National Semiconductor Corporation
- James L. Dunkley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated multiple transistors with different current gains
- Patent number 3,969,748
- Issue date Jul 13, 1976
- Hitachi, Ltd.
- Noboru Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor for integrated circuits and method for f...
- Patent number 3,967,307
- Issue date Jun 29, 1976
- Signetics Corporation
- Richard S. Muller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide isolated integrated injection logic with selective guard ring
- Patent number 3,962,717
- Issue date Jun 8, 1976
- Fairchild Camera and Instrument Corporation
- David O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating double-diffused, lateral transistors
- Patent number 3,945,857
- Issue date Mar 23, 1976
- Fairchild Camera and Instrument Corporation
- Richard D. Schinella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integral honeycomb-like support of very thin single crystal slices
- Patent number 3,936,329
- Issue date Feb 3, 1976
- Texas Instruments Incorporated
- Don Leslie Kendall
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
3922565
- Patent number 3,922,565
- Issue date Nov 25, 1975
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
3919006
- Patent number 3,919,006
- Issue date Nov 11, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3919005
- Patent number 3,919,005
- Issue date Nov 11, 1975
- H01 - BASIC ELECTRIC ELEMENTS

Lateral transistor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Lateral double diffused insulated gate field effect transistor and...

LDMOS transistor with reduced projective area of source region

Transistor device with increased breakdown voltage

Method of producing an LDMOS transistor having reduced dimensions,...

Resurf lateral double diffused insulated gate field effect transistor

Method for forming a lateral bipolar transistor with dual collector...

Method of fabricating lateral bipolar transistors

Lateral bipolar transistor

Lateral bipolar transistor with insulating trenches

Lateral double diffused insulated gate field effect transistor fabr...

Method of fabrication of transistor device with increased breakdown...

Method of forming high performance lateral PNP transistor with buri...

Lateral bipolar transistor and method of making the same

VLSI bipolar transistor process

Method for forming lateral PNP transistor

Method of manufacturing a semiconductor device

Fabrication method of bipolar transistor

Process for making a lateral bipolar transistor in a standard CSAG...

Process for producing NPN type lateral transistor with minimal subs...

Method of producing lateral transistor separated from substrate by...

Method of fabricating semiconductor device using at least two sorts...

Complementary bipolar transistors having collector diffused isolation

Integrated multiple transistors with different current gains

Lateral bipolar transistor for integrated circuits and method for f...

Oxide isolated integrated injection logic with selective guard ring

Method for fabricating double-diffused, lateral transistors

Integral honeycomb-like support of very thin single crystal slices

3922565

3919006

3919005

Patents Applicationslast 30 patents