Lateral transistors with two or more independent gates

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H01L29/66886

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66886Lateral transistors with two or more independent gates

Industries

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor
- Patent number 5,786,610
- Issue date Jul 28, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Mamiko Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a dual field effect transistor
- Patent number 5,360,755
- Issue date Nov 1, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Mitsunori Nakatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having overlapping conductor layers and method...
- Patent number 5,358,900
- Issue date Oct 25, 1994
- Fujitsu Limited
- Masahisa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a dual-gate metal-semiconductor field effect...
- Patent number 5,350,702
- Issue date Sep 27, 1994
- SamSung Electronics Co., Ltd.
- Seok T. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having overlapping conductor layers
- Patent number 5,252,843
- Issue date Oct 12, 1993
- Fujitsu Limited
- Masahisa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual field effect transistor structure employing a single source re...
- Patent number 5,225,703
- Issue date Jul 6, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Mitsunori Nakatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor
- Patent number 4,892,835
- Issue date Jan 9, 1990
- U.S. Philips Corporation
- Patrick D. Rabinzohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar-type field-effect transistor having metallized-well electrod...
- Patent number 4,482,907
- Issue date Nov 13, 1984
- Thomson-CSF
- Paul R. Jay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate Schottky barrier gate fet having an intermediate electrod...
- Patent number 4,048,646
- Issue date Sep 13, 1977
- Nippon Electric Company, Limited
- Masaki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 3,951,708
- Issue date Apr 20, 1976
- RCA Corporation
- Raymond Harkless Dean
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor integrated circuit device and method of fabricating t...
- Publication number 20030173584
- Publication date Sep 18, 2003
- FUJITSU QUANTUM DEVICES LIMITED
- Junichiro Nikaido
- H01 - BASIC ELECTRIC ELEMENTS

Lateral transistors with two or more independent gates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Field effect transistor

Method of manufacturing a dual field effect transistor

Semiconductor device having overlapping conductor layers and method...

Method for fabricating a dual-gate metal-semiconductor field effect...

Semiconductor device having overlapping conductor layers

Dual field effect transistor structure employing a single source re...

Method of manufacturing a field effect transistor

Planar-type field-effect transistor having metallized-well electrod...

Dual-gate Schottky barrier gate fet having an intermediate electrod...

Method of manufacturing a semiconductor device

Patents Applicationslast 30 patents

Semiconductor integrated circuit device and method of fabricating t...