Lattice strain control or utilization

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CPC
Y10S438/938

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/938Lattice strain control or utilization

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming semiconductor device
- Patent number 9,034,705
- Issue date May 19, 2015
- United Microelectronics Corp.
- Tsai-Yu Wen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Vertical group III-V nanowires on si, heterostructures, flexible ar...
- Patent number 8,932,940
- Issue date Jan 13, 2015
- The Regents of the University of California
- Deli Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor memory cell, device, and method for manufacturing the...
- Patent number 8,927,963
- Issue date Jan 6, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Zongliang Huo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Asymmetric cyclic desposition etch epitaxy
- Patent number 8,906,789
- Issue date Dec 9, 2014
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Technique for the growth of planar semi-polar gallium nitride
- Patent number 8,524,012
- Issue date Sep 3, 2013
- The Regents of the University of California
- Troy J. Baker
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Strained fully depleted silicon on insulator semiconductor device
- Patent number 8,502,283
- Issue date Aug 6, 2013
- GLOBALFOUNDRIES Inc.
- Qi Xiang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
MOS devices with partial stressor channel
- Patent number 8,274,071
- Issue date Sep 25, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hua Yu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing an III-V engineered substrate and the III-...
- Patent number 8,232,581
- Issue date Jul 31, 2012
- IMEC
- Geoffrey Pourtois
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 8,232,191
- Issue date Jul 31, 2012
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of manufacturing semiconductor devices including forming (1...
- Patent number 8,207,040
- Issue date Jun 26, 2012
- Samsung Electronics Co., Ltd.
- Hoi-Sung Chung
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Field-effect transistor and method for fabricating the same
- Patent number 8,187,957
- Issue date May 29, 2012
- Fujitsu Semiconductor Limited
- Keiji Ikeda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Technique for the growth of planar semi-polar gallium nitride
- Patent number 8,128,756
- Issue date Mar 6, 2012
- The Regents of the University of California
- Troy J. Baker
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Strain enhanced semiconductor devices and methods for their fabrica...
- Patent number 8,124,473
- Issue date Feb 28, 2012
- Advanced Micro Devices, Inc.
- James N. Pan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing semiconductor substrate, display panel, an...
- Patent number 8,110,478
- Issue date Feb 7, 2012
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
PMD liner nitride films and fabrication methods for improved NMOS p...
- Patent number 8,084,787
- Issue date Dec 27, 2011
- Texas Instruments Incorporated
- Haowen Bu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for transferring a layer of strained semiconductor material
- Patent number 8,049,224
- Issue date Nov 1, 2011
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of fabrication of channel-stressed semiconductor devices
- Patent number 7,981,750
- Issue date Jul 19, 2011
- Samsung Electronics Co., Ltd.
- Hion-suck Baik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Memory device and method for manufacturing the same
- Patent number 7,923,326
- Issue date Apr 12, 2011
- Dongbu Electronics Co., Ltd.
- Heung Jin Kim
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Field effect transistor having increased carrier mobility
- Patent number 7,923,785
- Issue date Apr 12, 2011
- GLOBALFOUNDRIES Inc.
- Qi Xiang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of producing a tensioned layer on a substrate
- Patent number 7,915,148
- Issue date Mar 29, 2011
- Forschungszentrum Julich GmbH
- Siegfried Mantl
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Flexible and elastic dielectric integrated circuit
- Patent number 7,911,012
- Issue date Mar 22, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd
- Glenn Leedy
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for fabricating a stressed MOS device
- Patent number 7,902,008
- Issue date Mar 8, 2011
- GLOBALFOUNDRIES Inc.
- Igor Peidous
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Memory device and method for manufacturing the same
- Patent number 7,883,966
- Issue date Feb 8, 2011
- Dongbu Electronics Co., Ltd.
- Heung Jin Kim
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Strained channel transistor formation
- Patent number 7,867,860
- Issue date Jan 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Chun Huang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
MOS devices with partial stressor channel
- Patent number 7,868,317
- Issue date Jan 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hua Yu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,838,934
- Issue date Nov 23, 2010
- Dongbu Electronics Co., Ltd.
- Myung Jin Jung
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Field-effect transistor and method for fabricating the same
- Patent number 7,825,493
- Issue date Nov 2, 2010
- Fujitsu Semiconductor Limited
- Keiji Ikeda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Stress-controlled dielectric integrated circuit
- Patent number 7,820,469
- Issue date Oct 26, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Glenn J Leedy
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for transferring a layer of strained semiconductor material
- Patent number 7,803,694
- Issue date Sep 28, 2010
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Transistor with embedded silicon/germanium material on a strained s...
- Patent number 7,763,515
- Issue date Jul 27, 2010
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20140295629
- Publication date Oct 2, 2014
- United Microelectronics Corp.
- Tsai-Yu Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Cyclic Desposition Etch Epitaxy
- Publication number 20140264348
- Publication date Sep 18, 2014
- TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD.
- Chun Hsiung Tsai
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR MEMORY CELL, DEVICE, AND METHOD FOR MANUFACTURING THE...
- Publication number 20120248503
- Publication date Oct 4, 2012
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE
- Publication number 20120119222
- Publication date May 17, 2012
- The Regents of the University of California
- Troy J. Baker
- C30 - CRYSTAL GROWTH
Information Patent Application
VERTICAL GROUP III-V NANOWIRES ON SI, HETEROSTRUCTURES, FLEXIBLE AR...
- Publication number 20110253982
- Publication date Oct 20, 2011
- The Regents of the University of California
- Deli Wang
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20110201166
- Publication date Aug 18, 2011
- Hoi-Sung CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices with Partial Stressor Channel
- Publication number 20110101305
- Publication date May 5, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor and method for fabricating the same
- Publication number 20110045663
- Publication date Feb 24, 2011
- FUJITSU SEMICONDUCTOR
- Keiji IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20110014765
- Publication date Jan 20, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing an III-V Engineered Substrate and the III-...
- Publication number 20100327316
- Publication date Dec 30, 2010
- IMEC
- Geoffrey Pourtois
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL
- Publication number 20100314628
- Publication date Dec 16, 2010
- S.O.I.Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE
- Publication number 20100133663
- Publication date Jun 3, 2010
- The Regents of the University of California
- Troy J. Baker
- C30 - CRYSTAL GROWTH
Information Patent Application
Memory Device and Method for Manufacturing the Same
- Publication number 20090317952
- Publication date Dec 24, 2009
- Heung Jin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device and Method for Manufacturing the Same
- Publication number 20090317953
- Publication date Dec 24, 2009
- Heung Jin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A TENSIONED LAYER ON A SUBSTRATE
- Publication number 20090298301
- Publication date Dec 3, 2009
- Siegfried Mantl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices with Partial Stressor Channel
- Publication number 20090224337
- Publication date Sep 10, 2009
- Ming-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, DISPLAY PANEL, AN...
- Publication number 20090104750
- Publication date Apr 23, 2009
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL-STRESSED SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION
- Publication number 20090020820
- Publication date Jan 22, 2009
- Samsung Electronics Co., Ltd.
- Hion-suck BAIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flexible and elastic dielectric integrated circuit
- Publication number 20080302559
- Publication date Dec 11, 2008
- Elm Technology Corporation
- Glenn Joseph Leedy
- G02 - OPTICS
Information Patent Application
PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL
- Publication number 20080265261
- Publication date Oct 30, 2008
- S.O.I.Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PMD Liner Nitride Films and Fabrication Methods for Improved NMOS P...
- Publication number 20080251850
- Publication date Oct 16, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS
- Publication number 20080251813
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN ENHANCED SEMICONDUCTOR DEVICES AND METHODS FOR THEIR FABRICA...
- Publication number 20080251851
- Publication date Oct 16, 2008
- Advanced Micro Devices, Inc.
- James N. PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVED FABRICATION OF A SEMICONDUCTOR USING A STRESS P...
- Publication number 20080191284
- Publication date Aug 14, 2008
- International Business Machines Corporation
- Christopher Vincent Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20080185612
- Publication date Aug 7, 2008
- Fujitsu Limited
- Masahiro FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SILICON/GERMANIUM MATERIAL ON A STRAINED S...
- Publication number 20080179628
- Publication date Jul 31, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL
- Publication number 20080164492
- Publication date Jul 10, 2008
- S.O.I.Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND STRUCTURE USING A HARD MASK FOR STRAINED SILICON...
- Publication number 20080119032
- Publication date May 22, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING ENHANCED STRESS STATE AND RELATED METHODS
- Publication number 20080108228
- Publication date May 8, 2008
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS devices with partial stressor channel
- Publication number 20080067557
- Publication date Mar 20, 2008
- Ming-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS

Lattice strain control or utilization

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming semiconductor device

Vertical group III-V nanowires on si, heterostructures, flexible ar...

Semiconductor memory cell, device, and method for manufacturing the...

Asymmetric cyclic desposition etch epitaxy

Technique for the growth of planar semi-polar gallium nitride

Strained fully depleted silicon on insulator semiconductor device

MOS devices with partial stressor channel

Method for manufacturing an III-V engineered substrate and the III-...

Semiconductor device manufacturing method

Methods of manufacturing semiconductor devices including forming (1...

Field-effect transistor and method for fabricating the same

Technique for the growth of planar semi-polar gallium nitride

Strain enhanced semiconductor devices and methods for their fabrica...

Method for manufacturing semiconductor substrate, display panel, an...

PMD liner nitride films and fabrication methods for improved NMOS p...

Process for transferring a layer of strained semiconductor material

Methods of fabrication of channel-stressed semiconductor devices

Memory device and method for manufacturing the same

Field effect transistor having increased carrier mobility

Method of producing a tensioned layer on a substrate

Flexible and elastic dielectric integrated circuit

Methods for fabricating a stressed MOS device

Memory device and method for manufacturing the same

Strained channel transistor formation

MOS devices with partial stressor channel

Semiconductor device and method for manufacturing the same

Field-effect transistor and method for fabricating the same

Stress-controlled dielectric integrated circuit

Process for transferring a layer of strained semiconductor material

Transistor with embedded silicon/germanium material on a strained s...

Patents Applicationslast 30 patents

METHOD OF FORMING SEMICONDUCTOR DEVICE

Asymmetric Cyclic Desposition Etch Epitaxy

SEMICONDUCTOR MEMORY CELL, DEVICE, AND METHOD FOR MANUFACTURING THE...

TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE

VERTICAL GROUP III-V NANOWIRES ON SI, HETEROSTRUCTURES, FLEXIBLE AR...

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

MOS Devices with Partial Stressor Channel

Field-effect transistor and method for fabricating the same

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Method for Manufacturing an III-V Engineered Substrate and the III-...

PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL

TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE

Memory Device and Method for Manufacturing the Same

Memory Device and Method for Manufacturing the Same

METHOD OF PRODUCING A TENSIONED LAYER ON A SUBSTRATE

MOS Devices with Partial Stressor Channel

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, DISPLAY PANEL, AN...

CHANNEL-STRESSED SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION

Flexible and elastic dielectric integrated circuit

PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL

PMD Liner Nitride Films and Fabrication Methods for Improved NMOS P...

HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETS

STRAIN ENHANCED SEMICONDUCTOR DEVICES AND METHODS FOR THEIR FABRICA...

METHOD FOR IMPROVED FABRICATION OF A SEMICONDUCTOR USING A STRESS P...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

TRANSISTOR WITH EMBEDDED SILICON/GERMANIUM MATERIAL ON A STRAINED S...

PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL

ETCHING METHOD AND STRUCTURE USING A HARD MASK FOR STRAINED SILICON...

DEVICE HAVING ENHANCED STRESS STATE AND RELATED METHODS

MOS devices with partial stressor channel