liquid atomic layer deposition

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H01L21/0229

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/0229liquid atomic layer deposition

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming ultra-shallow junction
- Patent number 12,165,876
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jian Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Boron nitride layer, apparatus including the same, and method of fa...
- Patent number 12,139,814
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Mechanism for finFET well doping
- Patent number 12,112,975
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with epitaxy regions having mixed wavy and non-wavy portions
- Patent number 12,094,779
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density logic formation using multi-dimensional laser annealing
- Patent number 12,087,640
- Issue date Sep 10, 2024
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices
- Patent number 12,074,023
- Issue date Aug 27, 2024
- Samsung Electronics Co., Ltd.
- Ji-woon Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electrostatic discharge protection devices
- Patent number 12,074,157
- Issue date Aug 27, 2024
- Samsung Electronics Co., Ltd.
- Dae-Lim Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically-oriented complementary transistor
- Patent number 12,046,678
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Yi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure for semiconductor device
- Patent number 12,040,384
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Left-ISD-LTSEE {low electrostatic field transistor (LEFT) using imp...
- Patent number 12,033,851
- Issue date Jul 9, 2024
- Mammen Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,027,602
- Issue date Jul 2, 2024
- United Microelectronics Corp.
- Jian-Feng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric layer, interconnection structure using the same, and man...
- Patent number 12,014,919
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate, laminate, substrate selection prog...
- Patent number 11,967,617
- Issue date Apr 23, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a monocrystalline layer of diamond or irid...
- Patent number 11,935,743
- Issue date Mar 19, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,930,628
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-I Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a porous portion, wafer composite and met...
- Patent number 11,881,397
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Iris Moder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxial region
- Patent number 11,869,765
- Issue date Jan 9, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator FIN...
- Patent number 11,862,702
- Issue date Jan 2, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor cleaning equipment and method for cleaning through vi...
- Patent number 11,854,794
- Issue date Dec 26, 2023
- NATIONAL CENTER FOR ADVANCED PACKAGING CO., LTD.
- Daping Yao
- B08 - CLEANING
Information Patent Grant
Semiconductor structure and related methods
- Patent number 11,848,241
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Jiu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth monitor system and methods for film deposition
- Patent number 11,848,202
- Issue date Dec 19, 2023
- Applied Materials, Inc.
- Zhepeng Cong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
FinFETs with epitaxy regions having mixed wavy and non-wavy portions
- Patent number 11,830,772
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing gallium nitride semiconductor device
- Patent number 11,784,039
- Issue date Oct 10, 2023
- Denso Corporation
- Jun Kojima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
- Publication number 20240429046
- Publication date Dec 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Toshiki MATSUBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT
- Publication number 20240387675
- Publication date Nov 21, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURNING COMPANY, LTD.
- Tsungyu HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
- Publication number 20240379457
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SUNG-LI WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Processing Using a Two-Dimensional Polymer
- Publication number 20240363333
- Publication date Oct 31, 2024
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS
- Publication number 20240363420
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSIO...
- Publication number 20240347613
- Publication date Oct 17, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Kimimori HAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR
- Publication number 20240347640
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Yi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20240339525
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240322007
- Publication date Sep 26, 2024
- UNITED MICROELECTRONICS CORP.
- Jian-Feng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240313087
- Publication date Sep 19, 2024
- UNITED MICROELECTRONICS CORP.
- Jian-Feng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC LAYER, INTERCONNECTION STRUCTURE USING THE SAME, AND MAN...
- Publication number 20240297038
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Chen HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM FORMING METHOD AND FILM FORMING APPARATUS
- Publication number 20240290610
- Publication date Aug 29, 2024
- Tokyo Electron Limited
- Takashi FUSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND SEMI...
- Publication number 20240258321
- Publication date Aug 1, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRI...
- Publication number 20240249934
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Naomi Yoshida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240204085
- Publication date Jun 20, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Wei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A POROUS PORTION, WAFER COMPOSITE AND MET...
- Publication number 20240153759
- Publication date May 9, 2024
- INFINEON TECHNOLOGIES AG
- Iris MODER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER
- Publication number 20240153761
- Publication date May 9, 2024
- HC SEMITEK (ZHEJIANG) CO., LTD.
- Hongpo HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING FREE CONNECTION STRUCTURES AND METHODS
- Publication number 20240145298
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH MONITOR SYSTEM AND METHODS FOR FILM DEPOSITION
- Publication number 20240120197
- Publication date Apr 11, 2024
- Applied Materials, Inc.
- Zhepeng CONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESS UNIFORMITY BY WAFER BACK SIDE DOPING
- Publication number 20240112904
- Publication date Apr 4, 2024
- SKYWORKS GLOBAL PTE. LTD.
- Kezia Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...
- Publication number 20240088254
- Publication date Mar 14, 2024
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION
- Publication number 20240087884
- Publication date Mar 14, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240071818
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- I-Wei Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYE...
- Publication number 20230411151
- Publication date Dec 21, 2023
- SOITEC
- Eric Guiot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230402278
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING METAL OXYNITRIDE FILM
- Publication number 20230402280
- Publication date Dec 14, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Kazuki TANEMURA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions
- Publication number 20230386924
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE SUPPORTS, SEMICONDUCTOR PROCESSING SYSTEMS, AND MATERIAL...
- Publication number 20230386874
- Publication date Nov 30, 2023
- ASM IP HOLDING, B.V.
- Shujin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PN JUNCTION
- Publication number 20230378311
- Publication date Nov 23, 2023
- STMicroelectronics (Rousset) SAS
- Guillaume GUIRLEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230369457
- Publication date Nov 16, 2023
- RENESAS ELECTRONICS CORPORATION
- YOSHIKI YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS

liquid atomic layer deposition

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for forming ultra-shallow junction

Optimized heteroepitaxial growth of semiconductors

Boron nitride layer, apparatus including the same, and method of fa...

Optimized heteroepitaxial growth of semiconductors

Mechanism for finFET well doping

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

High density logic formation using multi-dimensional laser annealing

Methods of manufacturing semiconductor devices

Electrostatic discharge protection devices

Vertically-oriented complementary transistor

Source/drain structure for semiconductor device

Left-ISD-LTSEE {low electrostatic field transistor (LEFT) using imp...

Semiconductor device and method for forming the same

Dielectric layer, interconnection structure using the same, and man...

Nitride semiconductor substrate, laminate, substrate selection prog...

Method for manufacturing a monocrystalline layer of diamond or irid...

Semiconductor device and manufacturing method thereof

Semiconductor device with a porous portion, wafer composite and met...

Semiconductor device including epitaxial region

Gate-all-around integrated circuit structures having insulator FIN...

Semiconductor cleaning equipment and method for cleaning through vi...

Semiconductor structure and related methods

Growth monitor system and methods for film deposition

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Method for manufacturing gallium nitride semiconductor device

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Patents Applicationslast 30 patents

METHOD FOR PRODUCING HETEROEPITAXIAL WAFER

EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE

Semiconductor Processing Using a Two-Dimensional Polymer

FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSIO...

VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR

SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

DIELECTRIC LAYER, INTERCONNECTION STRUCTURE USING THE SAME, AND MAN...

FILM FORMING METHOD AND FILM FORMING APPARATUS

COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND SEMI...

INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRI...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH A POROUS PORTION, WAFER COMPOSITE AND MET...

SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER

DOPING FREE CONNECTION STRUCTURES AND METHODS

GROWTH MONITOR SYSTEM AND METHODS FOR FILM DEPOSITION

PLASMA PROCESS UNIFORMITY BY WAFER BACK SIDE DOPING

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...

SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYE...

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

METHOD FOR MANUFACTURING METAL OXYNITRIDE FILM

FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions

SUBSTRATE SUPPORTS, SEMICONDUCTOR PROCESSING SYSTEMS, AND MATERIAL...

PN JUNCTION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME