Lithography-related aspects

Industry

CPC
H01L21/28123

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28123Lithography-related aspects

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,176,412
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with conductive via formation on self-aligned ga...
- Patent number 12,170,203
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of a semiconductor device and method of forming same
- Patent number 12,154,831
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure having a gate contact above a metal gate and strad...
- Patent number 12,148,834
- Issue date Nov 19, 2024
- Huawei Technologies Co., Ltd.
- Xinfang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stacked trench contacts and structures formed the...
- Patent number 12,142,566
- Issue date Nov 12, 2024
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method of forming the same
- Patent number 12,136,657
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure with gate and res...
- Patent number 12,136,572
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chai-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation region fabrication for replacement gate processing
- Patent number RE50181
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Brent A. Anderson
Information Patent Grant
Multi-layered insulating film stack
- Patent number 12,119,268
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 12,113,128
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned pattern formation post spacer etchback in tight pitch...
- Patent number 12,106,963
- Issue date Oct 1, 2024
- TESSERA LLC
- Sean D. Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM speed and margin optimization via spacer tuning
- Patent number 12,101,921
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hao Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and structure for metal gates
- Patent number 12,100,627
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tung-Huang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die and method of manufacturing the same
- Patent number 12,080,789
- Issue date Sep 3, 2024
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,068,162
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,057,491
- Issue date Aug 6, 2024
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 12,040,383
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation with conductive structures
- Patent number 12,033,900
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming the spacers on lateral flanks of a transistor gat...
- Patent number 12,033,859
- Issue date Jul 9, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Valentin Bacquie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal gate for multigate device
- Patent number 12,033,899
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask layout, semiconductor device and manufacturing method using th...
- Patent number 12,020,939
- Issue date Jun 25, 2024
- Magnachip Mixed-Signal, Ltd.
- Guk Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacing in integrated circuit structures
- Patent number 12,002,678
- Issue date Jun 4, 2024
- Intel Corporation
- Charles Henry Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for metal gate cut and structure thereof
- Patent number 11,996,293
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate processes
- Patent number 11,990,341
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap in inner spacers and methods of fabricating the same in fie...
- Patent number 11,990,529
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plate design to decrease noise in semiconductor devices
- Patent number 11,923,429
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,908,750
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and methods of forming thereof
- Patent number 11,894,277
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing the density of high-index nanoimprint lithog...
- Patent number 11,892,771
- Issue date Feb 6, 2024
- Applied Materials, Inc.
- Andrew Ceballos
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH CHANNEL-SYMMETRIC GATE
- Publication number 20250006810
- Publication date Jan 2, 2025
- Intel Corporation
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED INSULATING FILM STACK
- Publication number 20250006560
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420959
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420960
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION WITH CONDUCTIVE STRUCTURES
- Publication number 20240395629
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of a Semiconductor Device and Method of Forming Same
- Publication number 20240387294
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240387680
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with Air Gaps and the Method Thereof
- Publication number 20240379813
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE AND RES...
- Publication number 20240371698
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Chai-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240371873
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM SPEED AND MARGIN OPTIMIZATION VIA SPACER TUNING
- Publication number 20240373614
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Hao Lin
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATES
- Publication number 20240363441
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TUNG-HUANG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240355903
- Publication date Oct 24, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Metal Gate for Multigate Device
- Publication number 20240347391
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN FIN-TYPE FIELD EFFECT TRANSISTOR WITH FINE-TUNED EFFECTIV...
- Publication number 20240347638
- Publication date Oct 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20240347627
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SEPARATION STRUCTURE
- Publication number 20240339516
- Publication date Oct 10, 2024
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20240332293
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR METAL GATE CUT AND STRUCTURE THEREOF
- Publication number 20240332022
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHODS OF FORMING
- Publication number 20240321581
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240321572
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIE...
- Publication number 20240313082
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASK LAYOUT, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD USING TH...
- Publication number 20240290621
- Publication date Aug 29, 2024
- Magnachip Mixed-Signal, Ltd.
- Guk Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESSES
- Publication number 20240290620
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20240249946
- Publication date Jul 25, 2024
- Intel Corporation
- Charles Henry Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR
- Publication number 20240234535
- Publication date Jul 11, 2024
- AUO Corporation
- Kuo-Jui Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT, AND SOURCE AND DRAIN CONTACTS
- Publication number 20240222447
- Publication date Jul 4, 2024
- Intel Corporation
- Reken Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE CUT WITH HYBRID MATERIAL FILL
- Publication number 20240213100
- Publication date Jun 27, 2024
- Intel Corporation
- Swapnadip Ghosh
- H01 - BASIC ELECTRIC ELEMENTS

Lithography-related aspects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices and methods of manufacturing thereof

Method of forming a transistor device with a gate structure having...

Integrated circuit with conductive via formation on self-aligned ga...

Gate structure of a semiconductor device and method of forming same

FinFET structure having a gate contact above a metal gate and strad...

Method of forming stacked trench contacts and structures formed the...

Field-effect transistor and method of forming the same

Method for forming semiconductor device structure with gate and res...

Isolation region fabrication for replacement gate processing

Multi-layered insulating film stack

DMOS transistor having thick gate oxide and STI and method of fabri...

Self aligned pattern formation post spacer etchback in tight pitch...

SRAM speed and margin optimization via spacer tuning

Method and structure for metal gates

Semiconductor die and method of manufacturing the same

Semiconductor device and method

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Multi-gate device and related methods

Trench isolation with conductive structures

Method of forming the spacers on lateral flanks of a transistor gat...

Self-aligned metal gate for multigate device

Mask layout, semiconductor device and manufacturing method using th...

Gate spacing in integrated circuit structures

Method for metal gate cut and structure thereof

Cut metal gate processes

Air gap in inner spacers and methods of fabricating the same in fie...

Plate design to decrease noise in semiconductor devices

Semiconductor device and method

Transistor gates and methods of forming thereof

Methods for increasing the density of high-index nanoimprint lithog...

Patents Applicationslast 30 patents

TRANSISTOR WITH CHANNEL-SYMMETRIC GATE

SEMICONDUCTOR DEVICE AND METHOD

MULTI-LAYERED INSULATING FILM STACK

INVERTED GATE CUT REGION

INVERTED GATE CUT REGION

TRENCH ISOLATION WITH CONDUCTIVE STRUCTURES

Gate Structure of a Semiconductor Device and Method of Forming Same

FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

Semiconductor Devices with Air Gaps and the Method Thereof

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE AND RES...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SRAM SPEED AND MARGIN OPTIMIZATION VIA SPACER TUNING

METHOD AND STRUCTURE FOR METAL GATES

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

Self-Aligned Metal Gate for Multigate Device

MULTI-FIN FIN-TYPE FIELD EFFECT TRANSISTOR WITH FINE-TUNED EFFECTIV...

MULTI-GATE DEVICE AND RELATED METHODS

SEMICONDUCTOR DEVICE HAVING A SEPARATION STRUCTURE

GATE CONTACTS FOR SEMICONDUCTOR DEVICES

METHOD FOR METAL GATE CUT AND STRUCTURE THEREOF

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHODS OF FORMING

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIE...

MASK LAYOUT, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD USING TH...

CUT METAL GATE PROCESSES

GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES

THIN FILM TRANSISTOR

GATE CUT, AND SOURCE AND DRAIN CONTACTS

METAL GATE CUT WITH HYBRID MATERIAL FILL