Lithography-related aspects

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H01L21/28123

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28123Lithography-related aspects

Industries

Patents Grantslast 30 patents

Information Patent Grant
Inner spacer features for multi-gate transistors
- Patent number 12,363,988
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Han Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 12,363,937
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device and resulting device
- Patent number 12,349,449
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tong-Min Weng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for metal gate cut and structure thereof
- Patent number 12,347,690
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,336,253
- Issue date Jun 17, 2025
- United Microelectronics Corp.
- Chun-Hsien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,334,350
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number RE50457
- Issue date Jun 10, 2025
- Sony Group Corporation
- Yasushi Tateshita
Information Patent Grant
Semiconductor devices with air gaps and the method thereof
- Patent number 12,324,218
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor
- Patent number 12,317,573
- Issue date May 27, 2025
- AUO Corporation
- Kuo-Jui Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for manufacturing the same
- Patent number 12,315,861
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Ling Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap in inner spacers and methods of fabricating the same in fie...
- Patent number 12,300,735
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having air gap and method of fabricating thereof
- Patent number 12,300,734
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask layout, semiconductor device and manufacturing method using th...
- Patent number 12,288,691
- Issue date Apr 29, 2025
- Magnachip Mixed-Signal, Ltd.
- Guk Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate refill with void
- Patent number 12,283,485
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting-Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate isolation for multigate device
- Patent number 12,272,690
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
- Patent number 12,266,571
- Issue date Apr 1, 2025
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing the density of high-index nanoimprint lithog...
- Patent number 12,242,186
- Issue date Mar 4, 2025
- Applied Materials, Inc.
- Andrew Ceballos
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Power wall integration for multiple stacked devices
- Patent number 12,237,333
- Issue date Feb 25, 2025
- Tokyo Electron Limited
- Daniel Chanemougame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 12,211,922
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,176,412
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with conductive via formation on self-aligned ga...
- Patent number 12,170,203
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of a semiconductor device and method of forming same
- Patent number 12,154,831
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure having a gate contact above a metal gate and strad...
- Patent number 12,148,834
- Issue date Nov 19, 2024
- Huawei Technologies Co., Ltd.
- Xinfang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stacked trench contacts and structures formed the...
- Patent number 12,142,566
- Issue date Nov 12, 2024
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method of forming the same
- Patent number 12,136,657
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure with gate and res...
- Patent number 12,136,572
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chai-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation region fabrication for replacement gate processing
- Patent number RE50181
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Brent A. Anderson
Information Patent Grant
Multi-layered insulating film stack
- Patent number 12,119,268
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED CONTACTS
- Publication number 20250239486
- Publication date Jul 24, 2025
- Intel Corporation
- Mark T. BOHR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHODS OF FORMING
- Publication number 20250210357
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250212490
- Publication date Jun 26, 2025
- Samsung Electronics Co., Ltd.
- Pilkwang KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Air Spacer for Fin-Like Field Effect Transistor
- Publication number 20250185341
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER WALL INTEGRATION FOR MULTIPLE STACKED DEVICES
- Publication number 20250159981
- Publication date May 15, 2025
- TOKYO ELECTRON LIMITED
- Daniel Chanemougame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES HAVING GATE-CUTS, AND FABRICATION METHODS THEREOF
- Publication number 20250149340
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250142935
- Publication date May 1, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED GATE CUT REGION
- Publication number 20250132161
- Publication date Apr 24, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES HAVING HIGHLY INTEGRATED NMOS AND PMOS T...
- Publication number 20250133819
- Publication date Apr 24, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE REFILL WITH VOID
- Publication number 20250125150
- Publication date Apr 17, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Gang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250126874
- Publication date Apr 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Ju CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIRGAP SPACER BETWEEN GATE ELECTRODE AND SOURCE OR DRAIN CONTACT
- Publication number 20250107212
- Publication date Mar 27, 2025
- Intel Corporation
- Yang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250081587
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP SCALE SEMICONDUCTOR PACKAGE HAVING BACK SIDE METAL LAYER AND R...
- Publication number 20250069973
- Publication date Feb 27, 2025
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED PATTERN FORMATION POST SPACER ETCHBACK IN TIGHT PITCH...
- Publication number 20250062126
- Publication date Feb 20, 2025
- TESSERA LLC
- Sean D. Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...
- Publication number 20250054765
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250054764
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- KE-JING YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT
- Publication number 20250040240
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...
- Publication number 20250031439
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...
- Publication number 20250029926
- Publication date Jan 23, 2025
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL-SYMMETRIC GATE
- Publication number 20250006810
- Publication date Jan 2, 2025
- Intel Corporation
- Shao-Ming Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED INSULATING FILM STACK
- Publication number 20250006560
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420959
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420960
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION WITH CONDUCTIVE STRUCTURES
- Publication number 20240395629
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of a Semiconductor Device and Method of Forming Same
- Publication number 20240387294
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240387680
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS

Lithography-related aspects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Inner spacer features for multi-gate transistors

Multi-gate device and related methods

Method for forming semiconductor device and resulting device

Method for metal gate cut and structure thereof

Semiconductor device and method for fabricating the same

Semiconductor device and method of manufacture

Semiconductor device and semiconductor device manufacturing method

Semiconductor devices with air gaps and the method thereof

Thin film transistor

Integrated circuit structure and method for manufacturing the same

Air gap in inner spacers and methods of fabricating the same in fie...

Semiconductor device having air gap and method of fabricating thereof

Mask layout, semiconductor device and manufacturing method using th...

Cut metal gate refill with void

Gate isolation for multigate device

Self-aligned contacts

Methods for increasing the density of high-index nanoimprint lithog...

Power wall integration for multiple stacked devices

Integrated circuit devices having highly integrated NMOS and PMOS t...

Gate air spacer for fin-like field effect transistor

Semiconductor devices and methods of manufacturing thereof

Method of forming a transistor device with a gate structure having...

Integrated circuit with conductive via formation on self-aligned ga...

Gate structure of a semiconductor device and method of forming same

FinFET structure having a gate contact above a metal gate and strad...

Method of forming stacked trench contacts and structures formed the...

Field-effect transistor and method of forming the same

Method for forming semiconductor device structure with gate and res...

Isolation region fabrication for replacement gate processing

Multi-layered insulating film stack

Patents Applicationslast 30 patents

SELF-ALIGNED CONTACTS

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHODS OF FORMING

SEMICONDUCTOR DEVICE

Gate Air Spacer for Fin-Like Field Effect Transistor

POWER WALL INTEGRATION FOR MULTIPLE STACKED DEVICES

TRANSISTOR DEVICES HAVING GATE-CUTS, AND FABRICATION METHODS THEREOF

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

ANGLED GATE CUT REGION

INTEGRATED CIRCUIT DEVICES HAVING HIGHLY INTEGRATED NMOS AND PMOS T...

CUT METAL GATE REFILL WITH VOID

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

AIRGAP SPACER BETWEEN GATE ELECTRODE AND SOURCE OR DRAIN CONTACT

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

CHIP SCALE SEMICONDUCTOR PACKAGE HAVING BACK SIDE METAL LAYER AND R...

SELF ALIGNED PATTERN FORMATION POST SPACER ETCHBACK IN TIGHT PITCH...

INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT

FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...

METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

TRANSISTOR WITH CHANNEL-SYMMETRIC GATE

SEMICONDUCTOR DEVICE AND METHOD

MULTI-LAYERED INSULATING FILM STACK

INVERTED GATE CUT REGION

INVERTED GATE CUT REGION

TRENCH ISOLATION WITH CONDUCTIVE STRUCTURES

Gate Structure of a Semiconductor Device and Method of Forming Same

FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE