MA-GTO - Modified Anode Gate Turn-Off thyristor

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H01L2924/13022

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

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H01L2924/13022MA-GTO - Modified Anode Gate Turn-Off thyristor

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Patents Grantslast 30 patents

Information Patent Grant
Vertical insulated gate turn-off thyristor with intermediate p+ lay...
- Patent number 9,806,152
- Issue date Oct 31, 2017
- Pakal Technologies LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer system for a semiconductor switching device
- Patent number 9,698,067
- Issue date Jul 4, 2017
- ABB Schweiz AG
- Thomas Stiasny
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Spacer System For A Semiconductor Switching Device
- Publication number 20160071815
- Publication date Mar 10, 2016
- ABB TECHNOLOGY AG
- Thomas Stiasny
- H01 - BASIC ELECTRIC ELEMENTS