Magnetic-field-controlled resistors

Industry

CPC
H01L43/08

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L43/00Devices using galvano-magnetic or similar magnetic effects Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

Current Industry

H01L43/08Magnetic-field-controlled resistors

Industries

Patents Grantslast 30 patents

Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and Heusler alloy
- Patent number 11,694,714
- Issue date Jul 4, 2023
- TDK Corporation
- Kazuumi Inubushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stack with seed region and method of manufacturing...
- Patent number 11,690,229
- Issue date Jun 27, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,688,446
- Issue date Jun 27, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic field controlled transistor
- Patent number 11,683,938
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Cezar Bogdan Zota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,682,442
- Issue date Jun 20, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,683,988
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,672,182
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 11,672,181
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huang-Wen Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory (MRAM) device
- Patent number 11,665,970
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Whan-Kyun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,659,718
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device, magnetoresistive random access memory device,...
- Patent number 11,659,770
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Dae-Shik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and manufacturing method of magnetic memory...
- Patent number 11,659,773
- Issue date May 23, 2023
- Kioxia Corporation
- Takao Ochiai
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method for MRAM devices having spacer element
- Patent number 11,659,774
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Devices, systems and methods including magnetic structures and micr...
- Patent number 11,649,157
- Issue date May 16, 2023
- Analog Devices International Unlimited Company
- Alan J. O'Donnell
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Manufacturing techniques and corresponding devices for magnetic tun...
- Patent number 11,653,572
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic sensor
- Patent number 11,644,517
- Issue date May 9, 2023
- TDK Corporation
- Kei Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact integrated device packages
- Patent number 11,647,678
- Issue date May 9, 2023
- Analog Devices International Unlimited Company
- David Frank Bolognia
- G01 - MEASURING TESTING
Information Patent Grant
Stage device, power supply mechanism, and processing apparatus
- Patent number 11,640,918
- Issue date May 2, 2023
- Tokyo Electron Limited
- Satoshi Takeda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Planarization stop region for use with low pattern density intercon...
- Patent number 11,637,036
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Cornelius Brown Peethala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin current magnetization rotational element
- Patent number 11,637,237
- Issue date Apr 25, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of integration of a magnetoresistive structure
- Patent number 11,631,806
- Issue date Apr 18, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Kerry Joseph Nagel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterned silicide structures and methods of manufacture
- Patent number 11,631,807
- Issue date Apr 18, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Kuk-Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Linear sensor with dual spin valve element having reference layers...
- Patent number 11,630,168
- Issue date Apr 18, 2023
- ALLEGRO MICROSYSTEMS, LLC
- Rémy Lassalle-Balier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof, and memory
- Patent number 11,626,558
- Issue date Apr 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xiaoguang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin element and magnetic memory
- Patent number 11,624,790
- Issue date Apr 11, 2023
- TDK Corporation
- Atsushi Tsumita
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device with ruthenium diffusion barrier
- Patent number 11,626,451
- Issue date Apr 11, 2023
- Intel Corporation
- Emily Walker
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element including a crystallized co heusle...
- Patent number 11,621,392
- Issue date Apr 4, 2023
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,616,193
- Issue date Mar 28, 2023
- United Microelectronics Corp.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MRAM DEVICE WITH OCTAGON PROFILE
- Publication number 20240233793
- Publication date Jul 11, 2024
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...
- Publication number 20240196755
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE
- Publication number 20240188446
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Shravana Kumar Katakam
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Package with Current Sensing
- Publication number 20240170374
- Publication date May 23, 2024
- Shu Hui Goh
- G01 - MEASURING TESTING
Information Patent Application
FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAY...
- Publication number 20240164219
- Publication date May 16, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE WITH OCTAGON PROFILE
- Publication number 20240135978
- Publication date Apr 25, 2024
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
TOP CONTACT STRUCTURE FOR EMBEDDED MRAM
- Publication number 20240130242
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Ailian Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20240130243
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
- Publication number 20240112712
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED FET WITH THREE-TERMINAL SOT MRAM
- Publication number 20240105244
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...
- Publication number 20240107892
- Publication date Mar 28, 2024
- Apple Inc.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETO RESISTIVE ELEMENT
- Publication number 20240099152
- Publication date Mar 21, 2024
- TDK Corporation
- Kazuumi INUBUSHI
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER
- Publication number 20240099148
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODE...
- Publication number 20240090337
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20240065108
- Publication date Feb 22, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM STRUCTURE WITH RAISED EDGE OF TUNNEL BARRIER LAYER
- Publication number 20240032435
- Publication date Jan 25, 2024
- International Business Machines Corporation
- Koichi Motoyama
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE STRUCTURE
- Publication number 20240032436
- Publication date Jan 25, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER...
- Publication number 20240027547
- Publication date Jan 25, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Samridh Jaiswal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR AND NEUROMORPHIC DEVICE
- Publication number 20240020520
- Publication date Jan 18, 2024
- TDK Corporation
- Shogo YAMADA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240023456
- Publication date Jan 18, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE
- Publication number 20240023458
- Publication date Jan 18, 2024
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20240016063
- Publication date Jan 11, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Wei Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240008369
- Publication date Jan 4, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with G...
- Publication number 20240005973
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES
- Publication number 20230422629
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20230413682
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Chia-Hua LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH TAPERED SIDEWALLS
- Publication number 20230403944
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Oscar van der Strate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20230402078
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COAXIAL TOP MRAM ELECTRODE
- Publication number 20230402079
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS

Magnetic-field-controlled resistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Low resistance MgO capping layer for perpendicularly magnetized mag...

Magnetoresistance effect element and Heusler alloy

Magnetoresistive stack with seed region and method of manufacturing...

Forced current access with voltage clamping in cross-point array

Magnetic field controlled transistor

Forced current access with voltage clamping in cross-point array

Semiconductor device

Seed layer for multilayer magnetic materials

Magnetic random access memory

Magnetoresistive random access memory (MRAM) device

Magnetic random access memory and manufacturing method thereof

Semiconductor device, magnetoresistive random access memory device,...

Magnetic memory device and manufacturing method of magnetic memory...

Structure and method for MRAM devices having spacer element

Devices, systems and methods including magnetic structures and micr...

Manufacturing techniques and corresponding devices for magnetic tun...

Magnetic sensor

Compact integrated device packages

Stage device, power supply mechanism, and processing apparatus

Planarization stop region for use with low pattern density intercon...

Spin current magnetization rotational element

Method of integration of a magnetoresistive structure

Patterned silicide structures and methods of manufacture

Linear sensor with dual spin valve element having reference layers...

Semiconductor structure and manufacturing method thereof, and memory

Spin element and magnetic memory

Magnetic memory device with ruthenium diffusion barrier

Magnetoresistance effect element including a crystallized co heusle...

Stackable symmetrical operation memory bit cell structure with bidi...

Semiconductor device and method for fabricating the same

Patents Applicationslast 30 patents

MRAM DEVICE WITH OCTAGON PROFILE

REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-AC...

MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE

Semiconductor Package with Current Sensing

FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAY...

MRAM DEVICE WITH OCTAGON PROFILE

TOP CONTACT STRUCTURE FOR EMBEDDED MRAM

MAGNETIC TUNNEL JUNCTION DEVICE

SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

STACKED FET WITH THREE-TERMINAL SOT MRAM

MAGNETORESISTANCE SENSOR WITH BIASED FREE LAYER FOR IMPROVED STABIL...

MAGNETO RESISTIVE ELEMENT

MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER

MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODE...

HIGH DENSITY MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

MRAM STRUCTURE WITH RAISED EDGE OF TUNNEL BARRIER LAYER

MRAM DEVICE STRUCTURE

CONTROLLING OUT-OF-PLANE ANISOTROPY IN AN MR SENSOR WITH FREE LAYER...

MEMRISTOR AND NEUROMORPHIC DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE

MRAM STRUCTURE AND METHOD OF FABRICATING THE SAME

MAGNETORESISTIVE RANDOM ACCESS MEMORY

Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with G...

MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH TAPERED SIDEWALLS

SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY...

COAXIAL TOP MRAM ELECTRODE