Making conductor-insulator-semiconductor electrodes

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H01L21/28008

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28008Making conductor-insulator-semiconductor electrodes

Industries

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device with low threshold voltage
- Patent number 11,901,241
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boundary design for high-voltage integration on HKMG technology
- Patent number 11,855,091
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a conductive contact in direct contact...
- Patent number 11,855,217
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of semiconductor device and method for forming the same
- Patent number 11,854,825
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,785,759
- Issue date Oct 10, 2023
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method of manufacturing the same
- Patent number 11,775,724
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jung Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 11,769,819
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate aligned contact and method to fabricate same
- Patent number 11,756,829
- Issue date Sep 12, 2023
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fins
- Patent number 11,742,414
- Issue date Aug 29, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method therefor
- Patent number 11,715,639
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Chun Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure with stop lay...
- Patent number 11,594,634
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,495,626
- Issue date Nov 8, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro Kasahara
- G02 - OPTICS
Information Patent Grant
Gate aligned contact and method to fabricate same
- Patent number 11,495,496
- Issue date Nov 8, 2022
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,462,540
- Issue date Oct 4, 2022
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,430,799
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chen-Chin Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Boundary design for high-voltage integration on HKMG technology
- Patent number 11,410,999
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact formation
- Patent number 11,393,688
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Jerome A. Imonigie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure and method fo...
- Patent number 11,309,189
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method for producing same
- Patent number 11,276,574
- Issue date Mar 15, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing FET transistors
- Patent number 11,264,479
- Issue date Mar 1, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Laurent Grenouillet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing
- Patent number 11,251,278
- Issue date Feb 15, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sense amplifier layout for FinFET technology
- Patent number 11,238,905
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Huei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,189,522
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with recessed gate electrodes
- Patent number 11,183,432
- Issue date Nov 23, 2021
- Intel Corporation
- Srijit Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and system of manufacturing the same
- Patent number 11,138,361
- Issue date Oct 5, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jung Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Uniform work function metal recess for vertical transistor compleme...
- Patent number 11,133,308
- Issue date Sep 28, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate semiconductor device with dummy gate electrode and manu...
- Patent number 11,107,912
- Issue date Aug 31, 2021
- Renesas Electronics Corporation
- Yoshito Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a repaired dielectric layer
- Patent number 11,088,265
- Issue date Aug 10, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a protective layer to prevent formation of leakage paths
- Patent number 11,081,397
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Leo Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method for manufacturing same
- Patent number 11,062,075
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jung Chang
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY
- Publication number 20240088154
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230385511
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jung CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20230378321
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME
- Publication number 20230360972
- Publication date Nov 9, 2023
- Intel Corporation
- Oleg GOLONZKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230059502
- Publication date Feb 23, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro KASAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME
- Publication number 20230030806
- Publication date Feb 2, 2023
- Intel Corporation
- Oleg GOLONZKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20220415894
- Publication date Dec 29, 2022
- Intel Corporation
- Peter L.D. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220359552
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Chin LIU
- G11 - INFORMATION STORAGE
Information Patent Application
BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY
- Publication number 20220352161
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structure of Semiconductor Device and Method for Forming the Same
- Publication number 20220246441
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yin CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depositing and Oxidizing Silicon Liner for Forming Isolation Regions
- Publication number 20220230908
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20220157606
- Publication date May 19, 2022
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220149168
- Publication date May 12, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND APPARATUS FOR PROCE...
- Publication number 20220084829
- Publication date Mar 17, 2022
- SEMES CO., LTD.
- Joun Taek Koo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES
- Publication number 20220044971
- Publication date Feb 10, 2022
- Intel Corporation
- Srijit MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220027545
- Publication date Jan 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jung CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Forming a Protective Layer to Prevent Formation of Leakage Paths
- Publication number 20210358813
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Leo Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY
- Publication number 20210265344
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20210233944
- Publication date Jul 29, 2021
- Semiconductor Energy Laboratory Co., Ltd.
- Takahiro KASAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME
- Publication number 20210210385
- Publication date Jul 8, 2021
- Intel Corporation
- Abhijit Jayant PETHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20210159228
- Publication date May 27, 2021
- Intel Corporation
- Peter L.D. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210143276
- Publication date May 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME
- Publication number 20210125866
- Publication date Apr 29, 2021
- Intel Corporation
- Oleg GOLONZKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210125876
- Publication date Apr 29, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20210119015
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH STOP LAY...
- Publication number 20210050447
- Publication date Feb 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20210043456
- Publication date Feb 11, 2021
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200373317
- Publication date Nov 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Chin LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200357684
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Hsuan HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field Effect Transistor (FinFET) Device Structure and Method fo...
- Publication number 20200357655
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yin CHEN
- H01 - BASIC ELECTRIC ELEMENTS

Making conductor-insulator-semiconductor electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit device with low threshold voltage

Boundary design for high-voltage integration on HKMG technology

Semiconductor device having a conductive contact in direct contact...

Gate structure of semiconductor device and method for forming the same

Floating body memory cell having gates favoring different conductiv...

Integrated circuit and method of manufacturing the same

Semiconductor device structure with metal gate stack

Gate aligned contact and method to fabricate same

Semiconductor device with fins

Semiconductor device and fabrication method therefor

Fin field effect transistor (FinFET) device structure with stop lay...

Method for manufacturing semiconductor device

Gate aligned contact and method to fabricate same

Floating body memory cell having gates favoring different conductiv...

Semiconductor device and manufacturing method thereof

Boundary design for high-voltage integration on HKMG technology

Semiconductor contact formation

Fin field effect transistor (FinFET) device structure and method fo...

Semiconductor power device and method for producing same

Process for producing FET transistors

Trench-gate MOS transistor and method for manufacturing

Sense amplifier layout for FinFET technology

Semiconductor device and method of manufacturing the same

Integrated circuits with recessed gate electrodes

Integrated circuit and system of manufacturing the same

Uniform work function metal recess for vertical transistor compleme...

Trench gate semiconductor device with dummy gate electrode and manu...

Semiconductor structure having a repaired dielectric layer

Forming a protective layer to prevent formation of leakage paths

Integrated circuit and method for manufacturing same

Patents Applicationslast 30 patents

BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY

INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY

Gate Structure of Semiconductor Device and Method for Forming the Same

Depositing and Oxidizing Silicon Liner for Forming Isolation Regions

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND APPARATUS FOR PROCE...

INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES

INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME

Forming a Protective Layer to Prevent Formation of Leakage Paths

BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

Semiconductor Device and Method

GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH STOP LAY...

SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Fin Field Effect Transistor (FinFET) Device Structure and Method fo...