Mask materials other than SiO2 or SiN

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/02642Mask materials other than SiO2 or SiN

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonpolar or semipolar group III-nitride substrates
- Patent number 12,106,959
- Issue date Oct 1, 2024
- Saphlux, Inc.
- Jie Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective film deposition and semiconductor feature made...
- Patent number 12,094,935
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced hydrogen deposition processes
- Patent number 12,027,366
- Issue date Jul 2, 2024
- Applied Materials, Inc.
- Xiaoquan Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film-forming method, manufacturing method of electronic device, and...
- Patent number 12,009,183
- Issue date Jun 11, 2024
- The Japan Steel Works, Ltd.
- Keisuke Washio
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming optical components using selective area epitaxy
- Patent number 11,988,868
- Issue date May 21, 2024
- Xerox Corporation
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabrication and control of nano-structure array by angle-...
- Patent number 11,837,470
- Issue date Dec 5, 2023
- Samsung Electronics Co., Ltd.
- Jisun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a semiconductor device
- Patent number 11,776,809
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Markus Fabian Ritter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of silicon using deposition-treat-etch process
- Patent number 11,769,666
- Issue date Sep 26, 2023
- Applied Materials, Inc.
- Rui Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
- Patent number 11,721,549
- Issue date Aug 8, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride substrate, method of making, and method of use
- Patent number 11,705,322
- Issue date Jul 18, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-N nanostructures formed via cavity fill
- Patent number 11,670,686
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective film deposition and semiconductor feature made...
- Patent number 11,652,148
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,626,323
- Issue date Apr 11, 2023
- Sumitomo Electric Device Innovations, Inc.
- Toshiyuki Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction based vertical gallium nitride JFET power devices
- Patent number 11,575,000
- Issue date Feb 7, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET EPI channels having different heights on a stepped substrate
- Patent number 11,545,399
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making porous graphene membranes and membranes produced...
- Patent number 11,518,142
- Issue date Dec 6, 2022
- ETH Zurich
- Murray Height
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a semiconductor structure
- Patent number 11,476,119
- Issue date Oct 18, 2022
- Imec VZW
- Ming Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
- Patent number 11,404,268
- Issue date Aug 2, 2022
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth method and semiconductor device manufacturing method
- Patent number 11,244,826
- Issue date Feb 8, 2022
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of silicon using deposition-treat-etch process
- Patent number 11,081,348
- Issue date Aug 3, 2021
- Applied Materials, Inc.
- Rui Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making epitaxial structure
- Patent number 11,078,597
- Issue date Aug 3, 2021
- Tsinghua University
- Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal carbon film deposition
- Patent number 11,043,379
- Issue date Jun 22, 2021
- Applied Materials, Inc.
- Pramit Manna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally adjacent and diverse group III-N transistors
- Patent number 11,031,305
- Issue date Jun 8, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film-forming method, manufacturing method of electronic device, and...
- Patent number 11,024,488
- Issue date Jun 1, 2021
- The Japan Steel Works, Ltd.
- Keisuke Washio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,943,821
- Issue date Mar 9, 2021
- Sumitomo Electric Device Innovations, Inc.
- Toshiyuki Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Location-specific growth and transfer of single crystalline TMD mon...
- Patent number 10,889,914
- Issue date Jan 12, 2021
- The Trustees of the Stevens Institute of Technology
- Eui-Hyeok Yang
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Gas storage cylinder, deposition system, and method of manufacturin...
- Patent number 10,883,173
- Issue date Jan 5, 2021
- Samsung Electronics., Ltd.
- Yeonock Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...
- Publication number 20240421246
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Saket CHADDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVE FILM DEPOSITION AND SEMICONDUCTOR FEATURE MADE...
- Publication number 20240371947
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY
- Publication number 20240255698
- Publication date Aug 1, 2024
- Xerox Corporation
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF BLOCKING DIELECTRIC SURFACES USING BLOCKING MOLECULES TO...
- Publication number 20240145242
- Publication date May 2, 2024
- Applied Materials, Inc.
- Geetika BAJAJ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...
- Publication number 20240072159
- Publication date Feb 29, 2024
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240071761
- Publication date Feb 29, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
- Publication number 20230317444
- Publication date Oct 5, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATING REGROWN FIDUCIALS FOR SEMICONDUCT...
- Publication number 20230230931
- Publication date Jul 20, 2023
- NEXGEN POWER SYSTEMS, INC.
- Karthik Suresh Arulalan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE
- Publication number 20230154802
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Han Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING A DEVICE USING AN EPITAXIAL LATERAL OVERGROWTH...
- Publication number 20230127257
- Publication date Apr 27, 2023
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A SEMICONDUCTOR DEVICE
- Publication number 20230033374
- Publication date Feb 2, 2023
- International Business Machines Corporation
- Markus Fabian Ritter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...
- Publication number 20230022774
- Publication date Jan 26, 2023
- KYOCERA CORPORATION
- Katsunori AZUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, RESERVOIR COMPUTING SYSTEM, AND METHOD FOR MA...
- Publication number 20230015231
- Publication date Jan 19, 2023
- Fujitsu Limited
- Kenichi Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES
- Publication number 20220328311
- Publication date Oct 13, 2022
- Massachusetts Institute of Technology
- Jeehwan Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY
- Publication number 20220236485
- Publication date Jul 28, 2022
- Palo Alto Research Center Incorporated
- Thomas Wunderer
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCING AN OHMIC CONTACT AND ELECTRONIC COMPONENT WITH OHMIC CONTACT
- Publication number 20220216306
- Publication date Jul 7, 2022
- FORSCHUNGSZENTRUM JULICH GmbH
- Alexander PAWLIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depositing Low Roughness Diamond Films
- Publication number 20220127721
- Publication date Apr 28, 2022
- Applied Materials, Inc.
- Vicknesh Sahmuganathan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CRYSTAL GROWTH METHOD AND A SUBSTRATE FOR A SEMICONDUCTOR DEVICE
- Publication number 20220122839
- Publication date Apr 21, 2022
- Kyocera Corporation
- Takehiro NISHIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing a Semiconductor Structure
- Publication number 20220020587
- Publication date Jan 20, 2022
- IMEC vzw
- Ming Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING BORON AND GALLIUM CONTAINING SILICON GERMANIU...
- Publication number 20210375622
- Publication date Dec 2, 2021
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
Selective Deposition Of Silicon Using Deposition-Treat-Etch Process
- Publication number 20210351035
- Publication date Nov 11, 2021
- Applied Materials, Inc.
- Rui Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATION AND CONTROL OF NANO-STRUCTURE ARRAY BY ANGLE-...
- Publication number 20210335601
- Publication date Oct 28, 2021
- Korea Advanced Institute of Science and Technology
- Jisun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...
- Publication number 20210257510
- Publication date Aug 19, 2021
- GLO AB
- Saket CHADDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD...
- Publication number 20210249252
- Publication date Aug 12, 2021
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT FLOW SWITCHING ELEMENT
- Publication number 20210249581
- Publication date Aug 12, 2021
- MITSUBISHI MATERIALS CORPORATION
- Toshiaki Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...
- Publication number 20210249266
- Publication date Aug 12, 2021
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMIPOLAR OR NONPOLAR GROUP III-NITRIDE SUBSTRATES
- Publication number 20210175077
- Publication date Jun 10, 2021
- Saphlux, Inc.
- Jie Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210166970
- Publication date Jun 3, 2021
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Toshiyuki KOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM-FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND...
- Publication number 20210166922
- Publication date Jun 3, 2021
- The Japan Steel Works, Ltd.
- Keisuke WASHIO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Mask materials other than SiO2 or SiN

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Crystal growth method and a substrate for a semiconductor device

Nonpolar or semipolar group III-nitride substrates

Method of selective film deposition and semiconductor feature made...

Method of fabricating super-junction based vertical gallium nitride...

Reduced hydrogen deposition processes

Film-forming method, manufacturing method of electronic device, and...

Forming optical components using selective area epitaxy

Method of fabrication and control of nano-structure array by angle-...

Method of fabricating super-junction based vertical gallium nitride...

Fabrication of a semiconductor device

Selective deposition of silicon using deposition-treat-etch process

Large area group III nitride crystals and substrates, methods of ma...

Group III nitride substrate, method of making, and method of use

III-N nanostructures formed via cavity fill

Method of selective film deposition and semiconductor feature made...

Semiconductor device

Super-junction based vertical gallium nitride JFET power devices

FinFET EPI channels having different heights on a stepped substrate

Method for making porous graphene membranes and membranes produced...

Method of manufacturing a semiconductor structure

Method for growing GaN crystal and c-plane GaN substrate

Crystal growth method and semiconductor device manufacturing method

Selective deposition of silicon using deposition-treat-etch process

Method for making epitaxial structure

Conformal carbon film deposition

Laterally adjacent and diverse group III-N transistors

Film-forming method, manufacturing method of electronic device, and...

Method of manufacturing semiconductor device

Location-specific growth and transfer of single crystalline TMD mon...

Gas storage cylinder, deposition system, and method of manufacturin...

Patents Applicationslast 30 patents

LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

METHOD OF SELECTIVE FILM DEPOSITION AND SEMICONDUCTOR FEATURE MADE...

FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY

METHOD OF BLOCKING DIELECTRIC SURFACES USING BLOCKING MOLECULES TO...

SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...

SEMICONDUTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE

METHOD AND SYSTEM FOR FABRICATING REGROWN FIDUCIALS FOR SEMICONDUCT...

FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE

METHOD FOR REMOVING A DEVICE USING AN EPITAXIAL LATERAL OVERGROWTH...

FABRICATION OF A SEMICONDUCTOR DEVICE

MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE, RESERVOIR COMPUTING SYSTEM, AND METHOD FOR MA...

MULTI-REGIONAL EPITAXIAL GROWTH AND RELATED SYSTEMS AND ARTICLES

FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY

PRODUCING AN OHMIC CONTACT AND ELECTRONIC COMPONENT WITH OHMIC CONTACT

Depositing Low Roughness Diamond Films

CRYSTAL GROWTH METHOD AND A SUBSTRATE FOR A SEMICONDUCTOR DEVICE

Method of Manufacturing a Semiconductor Structure

METHOD FOR DEPOSITING BORON AND GALLIUM CONTAINING SILICON GERMANIU...

Selective Deposition Of Silicon Using Deposition-Treat-Etch Process

METHOD OF FABRICATION AND CONTROL OF NANO-STRUCTURE ARRAY BY ANGLE-...

LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...

IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD...

HEAT FLOW SWITCHING ELEMENT

LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...

SEMIPOLAR OR NONPOLAR GROUP III-NITRIDE SUBSTRATES

SEMICONDUCTOR DEVICE

FILM-FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND...