Material including carbon

Industry

CPC
G11C2213/35

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/35Material including carbon

Industries

Patents Grantslast 30 patents

Information Patent Grant
Resistive change element arrays
- Patent number 11,923,003
- Issue date Mar 5, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic switching element
- Patent number 11,522,141
- Issue date Dec 6, 2022
- Merck Patent GmbH
- Peer Kirsch
- G11 - INFORMATION STORAGE
Information Patent Grant
Carbon-based volatile and non-volatile memristors
- Patent number 11,393,976
- Issue date Jul 19, 2022
- Massachusetts Institute of Technology
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatic discharge protection devices using carbon-based diodes
- Patent number 11,387,277
- Issue date Jul 12, 2022
- Nantero, Inc.
- Claude L. Bertin
- G11 - INFORMATION STORAGE
Information Patent Grant
Combinational resistive change elements
- Patent number 11,295,810
- Issue date Apr 5, 2022
- Nantero, Inc.
- Jia Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,069,745
- Issue date Jul 20, 2021
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic switching element
- Patent number 11,063,227
- Issue date Jul 13, 2021
- Merck Patent GmbH
- Peer Kirsch
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Nonvolatile memory device including two-dimensional material and ap...
- Patent number 11,024,748
- Issue date Jun 1, 2021
- Samsung Electronics Co., Ltd.
- Jaeho Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for programing DDR compatible open architecture resistive c...
- Patent number 10,937,498
- Issue date Mar 2, 2021
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory device
- Patent number 10,930,656
- Issue date Feb 23, 2021
- Korea Advanced Institute of Science and Technology
- Bum Ki Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile nanotube switches with reduced switching voltages and c...
- Patent number 10,885,978
- Issue date Jan 5, 2021
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Conductive bridge random access memory (CBRAM) devices with low the...
- Patent number 10,868,246
- Issue date Dec 15, 2020
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive change element arrays using a reference line
- Patent number 10,762,961
- Issue date Sep 1, 2020
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electronic component including molecular layer
- Patent number 10,741,778
- Issue date Aug 11, 2020
- Merck Patent GmbH
- Peer Kirsch
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-linear resistive change memory cells and arrays
- Patent number 10,700,131
- Issue date Jun 30, 2020
- Nantero, Inc.
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory stack with treated sidewalls
- Patent number 10,692,572
- Issue date Jun 23, 2020
- Micron Technology, Inc.
- Yongjun Jeff Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spherical complementary resistance switchable filler and nonvolatil...
- Patent number 10,615,227
- Issue date Apr 7, 2020
- Korea Institute of Science and Technology
- Sang-Soo Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Select device for memory cell applications
- Patent number 10,608,048
- Issue date Mar 31, 2020
- Micron Technology, Inc.
- David H. Wells
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 10,600,845
- Issue date Mar 24, 2020
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Grant
Probabilistic event detector for fast overwrite disturb remediation...
- Patent number 10,510,408
- Issue date Dec 17, 2019
- Micron Technology, Inc.
- Samuel E. Bradshaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming crosspoint arrays of resistive change memory cells
- Patent number 10,403,683
- Issue date Sep 3, 2019
- Nantero, Inc.
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory stack with treated sidewalls
- Patent number 10,381,072
- Issue date Aug 13, 2019
- Micron Technology, Inc.
- Yongjun Jeff Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive change element arrays with in situ initialization
- Patent number 10,340,005
- Issue date Jul 2, 2019
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Variable resistance memory stack with treated sidewalls
- Patent number 10,325,653
- Issue date Jun 18, 2019
- Micron Technology, Inc.
- Yongjun Jeff Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
DDR compatible open array architectures for resistive change elemen...
- Patent number 10,290,349
- Issue date May 14, 2019
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Resistive change elements incorporating carbon based diode select d...
- Patent number 10,249,684
- Issue date Apr 2, 2019
- Nantero, Inc.
- Claude L. Bertin
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile nanotube switches and systems using same
- Patent number 10,204,682
- Issue date Feb 12, 2019
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Storage element
- Patent number 10,192,600
- Issue date Jan 29, 2019
- Sony Corporation
- Hiroyuki Uchida
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 10,141,374
- Issue date Nov 27, 2018
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Select device for memory cell applications
- Patent number 10,109,677
- Issue date Oct 23, 2018
- Micron Technology, Inc.
- David H. Wells
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Resistive Change Element Arrays
- Publication number 20240038299
- Publication date Feb 1, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Change Element Arrays
- Publication number 20220148652
- Publication date May 12, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
Carbon-Based Volatile and Non-Volatile Memristors
- Publication number 20210217952
- Publication date Jul 15, 2021
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Application
Electrostatic Discharge Protection Devices Using Carbon-Based Diodes
- Publication number 20200403036
- Publication date Dec 24, 2020
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
Combinational Resistive Change Elements
- Publication number 20200388331
- Publication date Dec 10, 2020
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20200176514
- Publication date Jun 4, 2020
- Toshiba Memory Corporation
- Kenichi Murooka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Linear Resistive Change Memory Cells and Arrays
- Publication number 20190378879
- Publication date Dec 12, 2019
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY STACK WITH TREATED SIDEWALLS
- Publication number 20190362785
- Publication date Nov 28, 2019
- Micron Technology, Inc.
- Yongjun Jeff Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Change Element Arrays Using a Reference Line
- Publication number 20190341107
- Publication date Nov 7, 2019
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods for Forming Crosspoint Arrays of Resistive Change Memory Cells
- Publication number 20190221613
- Publication date Jul 18, 2019
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20190067376
- Publication date Feb 28, 2019
- Toshiba Memory Corporation
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Application
SELECT DEVICE FOR MEMORY CELL APPLICATIONS
- Publication number 20190006420
- Publication date Jan 3, 2019
- Micron Technology, Inc.
- David H. Wells
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY STACK WITH TREATED SIDEWALLS
- Publication number 20180144795
- Publication date May 24, 2018
- Micron Technology, Inc.
- Yongjun Jeff Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE CHANGE ELEMENT ARRAYS WITH IN SITU INITIALIZATION
- Publication number 20180033483
- Publication date Feb 1, 2018
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nonvolatile Nanotube Switches and Systems Using Same
- Publication number 20180025779
- Publication date Jan 25, 2018
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRONIC COMPONENT
- Publication number 20180006253
- Publication date Jan 4, 2018
- Merck Patent GmbH
- Peer KIRSCH
- G11 - INFORMATION STORAGE
Information Patent Application
SELECT DEVICE FOR MEMORY CELL APPLICATIONS
- Publication number 20170358627
- Publication date Dec 14, 2017
- Micron Technology, Inc.
- David H. Wells
- G11 - INFORMATION STORAGE
Information Patent Application
DDR COMPATIBLE OPEN ARRAY ACHITECTURES FOR RESISTIVE CHANGE ELEMENT...
- Publication number 20170352418
- Publication date Dec 7, 2017
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Memory Apparatus and Method of Production Thereof
- Publication number 20170323929
- Publication date Nov 9, 2017
- Nokia Technologies Oy
- Alexander Alexandrovich BESSONOV
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20170317144
- Publication date Nov 2, 2017
- KABUSHIKI KAISHA TOSHIBA
- Kenichi MUROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FABRICATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES A...
- Publication number 20170154925
- Publication date Jun 1, 2017
- SanDisk Technologies LLC
- Seiji Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Application
PROTON RESISTIVE MEMORY DEVICES AND METHODS
- Publication number 20170047513
- Publication date Feb 16, 2017
- University of Washington
- Marco Rolandi
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR PROGRAMMING AND ACCESSING DDR COMPATIBLE RESISTIVE CHAN...
- Publication number 20170032839
- Publication date Feb 2, 2017
- Nantero Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS POINT ARRAYS OF 1-R NONVOLATILE RESISTIVE CHANGE MEMORY CELLS...
- Publication number 20160315122
- Publication date Oct 27, 2016
- Nantero Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND...
- Publication number 20160268340
- Publication date Sep 15, 2016
- SanDisk Technologies LLC
- Seiji Shimabukuro
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20160254320
- Publication date Sep 1, 2016
- KABUSHIKI KAISHA TOSHIBA
- Kenichi MUROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20140369104
- Publication date Dec 18, 2014
- KABUSHIKI KAISHA TOSHIBA
- Kenichi MUROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
FILAMENTARY MEMORY DEVICES AND METHODS
- Publication number 20140339491
- Publication date Nov 20, 2014
- Lei Bi
- G11 - INFORMATION STORAGE
Information Patent Application
USE OF HYDROCARBON NANORINGS FOR DATA STORAGE
- Publication number 20140269015
- Publication date Sep 18, 2014
- Laurence H. COOKE
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY STATE SENSING BASED ON CELL CAPACITANCE
- Publication number 20140254291
- Publication date Sep 11, 2014
- International Business Machines Corporation
- SangBum Kim
- G11 - INFORMATION STORAGE

Material including carbon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistive change element arrays

Electronic switching element

Carbon-based volatile and non-volatile memristors

Electrostatic discharge protection devices using carbon-based diodes

Combinational resistive change elements

Memory device

Electronic switching element

Nonvolatile memory device including two-dimensional material and ap...

Methods for programing DDR compatible open architecture resistive c...

Memory device

Nonvolatile nanotube switches with reduced switching voltages and c...

Conductive bridge random access memory (CBRAM) devices with low the...

Resistive change element arrays using a reference line

Electronic component including molecular layer

Non-linear resistive change memory cells and arrays

Variable resistance memory stack with treated sidewalls

Spherical complementary resistance switchable filler and nonvolatil...

Select device for memory cell applications

Memory device

Probabilistic event detector for fast overwrite disturb remediation...

Methods for forming crosspoint arrays of resistive change memory cells

Phase change memory stack with treated sidewalls

Resistive change element arrays with in situ initialization

Variable resistance memory stack with treated sidewalls

DDR compatible open array architectures for resistive change elemen...

Resistive change elements incorporating carbon based diode select d...

Nonvolatile nanotube switches and systems using same

Storage element

Memory device

Select device for memory cell applications

Patents Applicationslast 30 patents

Resistive Change Element Arrays

Resistive Change Element Arrays

Carbon-Based Volatile and Non-Volatile Memristors

Electrostatic Discharge Protection Devices Using Carbon-Based Diodes

Combinational Resistive Change Elements

MEMORY DEVICE

Non-Linear Resistive Change Memory Cells and Arrays

VARIABLE RESISTANCE MEMORY STACK WITH TREATED SIDEWALLS

Resistive Change Element Arrays Using a Reference Line

Methods for Forming Crosspoint Arrays of Resistive Change Memory Cells

MEMORY DEVICE

SELECT DEVICE FOR MEMORY CELL APPLICATIONS

VARIABLE RESISTANCE MEMORY STACK WITH TREATED SIDEWALLS

RESISTIVE CHANGE ELEMENT ARRAYS WITH IN SITU INITIALIZATION

Nonvolatile Nanotube Switches and Systems Using Same

ELECTRONIC COMPONENT

SELECT DEVICE FOR MEMORY CELL APPLICATIONS

DDR COMPATIBLE OPEN ARRAY ACHITECTURES FOR RESISTIVE CHANGE ELEMENT...

Memory Apparatus and Method of Production Thereof

MEMORY DEVICE

METHOD OF FABRICATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES A...

PROTON RESISTIVE MEMORY DEVICES AND METHODS

METHODS FOR PROGRAMMING AND ACCESSING DDR COMPATIBLE RESISTIVE CHAN...

CROSS POINT ARRAYS OF 1-R NONVOLATILE RESISTIVE CHANGE MEMORY CELLS...

METHOD OF OPERATING MEMORY ARRAY HAVING DIVIDED APART BIT LINES AND...

MEMORY DEVICE

MEMORY DEVICE

FILAMENTARY MEMORY DEVICES AND METHODS

USE OF HYDROCARBON NANORINGS FOR DATA STORAGE

MEMORY STATE SENSING BASED ON CELL CAPACITANCE