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H01L21/0237

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/0237Materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming vias in a GaN/diamond wafer
- Patent number 12,261,206
- Issue date Mar 25, 2025
- RFHIC Corporation
- Won Sang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire array, optoelectronic device and preparation method thereof
- Patent number 12,255,231
- Issue date Mar 18, 2025
- South China Normal University
- Richard Notzel
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Graphene hybrids for biological and chemical sensing
- Patent number 12,247,923
- Issue date Mar 11, 2025
- The Penn State Research Foundation
- Joshua A. Robinson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC semiconductor substrate, and, production method therefor and pr...
- Patent number 12,237,377
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC substrate
- Patent number 12,237,378
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High purity polysilocarb derived silicon carbide powder
- Patent number 12,215,031
- Issue date Feb 4, 2025
- Pallidus, Inc.
- Andrew R. Hopkins
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods of forming SOI substrates
- Patent number 12,211,686
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Alex Usenko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor substrate and epitaxial growt...
- Patent number 12,209,328
- Issue date Jan 28, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device and si...
- Patent number 12,205,990
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Takafumi Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing same
- Patent number 12,205,989
- Issue date Jan 21, 2025
- PROTERIAL, LTD.
- Tsuyoshi Miura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multilayer semiconductor structure, semiconductor device, and metho...
- Patent number 12,198,934
- Issue date Jan 14, 2025
- Sumitomo Electric Industries, Ltd.
- Takahide Hirasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a composite structure comprising a thin layer...
- Patent number 12,198,983
- Issue date Jan 14, 2025
- Soitec
- Ionut Radu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Device and method for high pressure anneal
- Patent number 12,183,573
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate and composite substrate for semiconductor d...
- Patent number 12,183,792
- Issue date Dec 31, 2024
- NGK Insulators, Ltd.
- Kiyoshi Matsushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film transistor including a stacked multilayer graphene active...
- Patent number 12,166,112
- Issue date Dec 10, 2024
- Sumitomo Electric Industries, Ltd.
- Yasunori Tateno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,132,084
- Issue date Oct 29, 2024
- Fuji Electric Co., Ltd.
- Yohei Kagoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biaxially oriented SiC composite substrate and semiconductor device...
- Patent number 12,125,883
- Issue date Oct 22, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method of GaN field effect transistor based on diamond...
- Patent number 12,112,944
- Issue date Oct 8, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Method for producing silicon carbide semiconductor device and silic...
- Patent number 12,100,739
- Issue date Sep 24, 2024
- Sumitomo Electric Industries, Ltd.
- Hideto Tamaso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,091,772
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of controlling wafer bow in a type III-V semiconductor device
- Patent number 12,080,785
- Issue date Sep 3, 2024
- Infineon Technologies Austria AG
- Seong-Eun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,074,201
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE WITH HIGH RESISTIVI...
- Publication number 20250105004
- Publication date Mar 27, 2025
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250107171
- Publication date Mar 27, 2025
- Proterial, Ltd.
- Sadahiko KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250107189
- Publication date Mar 27, 2025
- Hon Young Semiconductor Corporation
- Jian-Yi WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LAYER TRANSFER
- Publication number 20250105005
- Publication date Mar 27, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME
- Publication number 20250107194
- Publication date Mar 27, 2025
- MICROCHIP TECHNOLOGY INCORPORATED
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250107118
- Publication date Mar 27, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250089322
- Publication date Mar 13, 2025
- Kabushiki Kaisha Toshiba
- Mitsuhiro KUSHIBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL
- Publication number 20250079162
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Ying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Epitaxy
- Publication number 20250079165
- Publication date Mar 6, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
- Publication number 20250059679
- Publication date Feb 20, 2025
- Resonac Corporation
- Marusu KATADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implant Hard Mask for Substrates
- Publication number 20250062122
- Publication date Feb 20, 2025
- Applied Materials, Inc.
- Jun FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...
- Publication number 20250063784
- Publication date Feb 20, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE...
- Publication number 20250056856
- Publication date Feb 13, 2025
- Sumitomo Electric Industries, Ltd.
- Naoki KAJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...
- Publication number 20250051962
- Publication date Feb 13, 2025
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR EVALUATING SiC SUBSTRATE, METHOD FOR MANUFACTURING SiC S...
- Publication number 20250035570
- Publication date Jan 30, 2025
- Resonac Corporation
- Hiromasa SUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR GRAPHENE LAYER GROWTH AND SIMULTANEOUS MOLYBDENUM SILI...
- Publication number 20250022967
- Publication date Jan 16, 2025
- STMicroelectronics International N.V.
- Giuseppe D'ARRIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20250014902
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Axel König
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...
- Publication number 20250014897
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...
- Publication number 20250006492
- Publication date Jan 2, 2025
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interfacial Layer for Anneal Capping Layer
- Publication number 20250006507
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Yi ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20250006491
- Publication date Jan 2, 2025
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...
- Publication number 20250006796
- Publication date Jan 2, 2025
- Sumitomo Electric Industries, Ltd.
- Takahiro SHIIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
- Publication number 20240426026
- Publication date Dec 26, 2024
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...
- Publication number 20240379351
- Publication date Nov 14, 2024
- SOITEC
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
- Publication number 20240371632
- Publication date Nov 7, 2024
- ROBERT BOSCH GmbH
- Humberto Rodriguez Alvarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE...
- Publication number 20240363342
- Publication date Oct 31, 2024
- ROBERT BOSCH GmbH
- BO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS
- Publication number 20240355619
- Publication date Oct 24, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin James LINTHICUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE FOR FABRICATION OF BETA GALLIUM OXIDE DEVICES
- Publication number 20240347339
- Publication date Oct 17, 2024
- Syrnatec, Inc.
- Yash Suresh Mirchandani
- B24 - GRINDING POLISHING
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240332081
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming vias in a GaN/diamond wafer

Nanowire array, optoelectronic device and preparation method thereof

Graphene hybrids for biological and chemical sensing

Method for producing a SiC seed crystal for growth of a SiC ingot b...

SiC semiconductor substrate, and, production method therefor and pr...

Method for manufacturing SiC substrate

High purity polysilocarb derived silicon carbide powder

Methods of forming SOI substrates

Method of manufacturing semiconductor substrate and epitaxial growt...

Method of manufacturing silicon carbide semiconductor device and si...

Silicon carbide epitaxial substrate and method for manufacturing same

Multilayer semiconductor structure, semiconductor device, and metho...

Method for producing a composite structure comprising a thin layer...

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

Device and method for high pressure anneal

SiC composite substrate and composite substrate for semiconductor d...

Preparation method for semiconductor structure

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Thin film transistor including a stacked multilayer graphene active...

Silicon carbide semiconductor device and method of manufacturing si...

Biaxially oriented SiC composite substrate and semiconductor device...

Large dimension silicon carbide single crystalline materials with r...

Preparation method of GaN field effect transistor based on diamond...

Silicon carbide substrate

Method for producing silicon carbide semiconductor device and silic...

Silicon carbide substrate

SiC composite substrate including biaxially oreinted SiC layer and...

Method of controlling wafer bow in a type III-V semiconductor device

Semiconductor substrate, semiconductor device, and manufacturing me...

Method for manufacturing a SiC substrate by simultaneously forming...

Patents Applicationslast 30 patents

POLYCRYSTALLINE SILICON CARBIDE (SIC) SUBSTRATE WITH HIGH RESISTIVI...

SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH LAYER TRANSFER

SILICON CARBIDE POWER MOSFET AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE

WAFER AND METHOD FOR MANUFACTURING THE SAME

DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL

Silicon Carbide Epitaxy

SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

Implant Hard Mask for Substrates

PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING...

SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE...

METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...

METHOD FOR EVALUATING SiC SUBSTRATE, METHOD FOR MANUFACTURING SiC S...

A METHOD FOR GRAPHENE LAYER GROWTH AND SIMULTANEOUS MOLYBDENUM SILI...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...

METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...

Interfacial Layer for Anneal Capping Layer

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBI...

COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

METHOD FOR FABRICATING A POLYCRYSTALLINE SILICON CARBIDE CARRIER SU...

METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR COMPONENT

METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE...

SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS

COMPOSITE SUBSTRATE FOR FABRICATION OF BETA GALLIUM OXIDE DEVICES

SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME