Memory cell comprising at least a nanowire and only two terminals

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G11C2213/19

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

Current Industry

G11C2213/19Memory cell comprising at least a nanowire and only two terminals

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile nanotube switch elements using sidewall contacts
- Patent number 11,177,261
- Issue date Nov 16, 2021
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Systems and methods for efficient matrix multiplication
- Patent number 10,990,651
- Issue date Apr 27, 2021
- Rain Neuromorphics Inc.
- Jack David Kendall
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile nanotube switches with reduced switching voltages and c...
- Patent number 10,885,978
- Issue date Jan 5, 2021
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile nanotube memory arrays using nonvolatile nanotube block...
- Patent number 10,854,243
- Issue date Dec 1, 2020
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Double density nonvolatile nanotube switch memory cells
- Patent number 10,546,859
- Issue date Jan 28, 2020
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Systems and methods for efficient matrix multiplication
- Patent number 10,430,493
- Issue date Oct 1, 2019
- Rain Neuromorphics Inc.
- Jack Kendall
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory elements and cross point switches and arrays of same using n...
- Patent number 10,339,982
- Issue date Jul 2, 2019
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile nanotube switches and systems using same
- Patent number 10,204,682
- Issue date Feb 12, 2019
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked three-dimensional arrays of two terminal nanotube switching...
- Patent number 10,096,601
- Issue date Oct 9, 2018
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...
- Patent number 9,911,743
- Issue date Mar 6, 2018
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile composite nanoscopic fabric NAND memory arrays and met...
- Patent number 9,767,902
- Issue date Sep 19, 2017
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three-dimensional array of re-programmable non-volatile memory elem...
- Patent number 9,721,653
- Issue date Aug 1, 2017
- SanDisk Technologies LLC
- Tianhong Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Two-terminal nanotube devices and systems and methods of making same
- Patent number 9,601,498
- Issue date Mar 21, 2017
- Nantero Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three-dimensional array of re-programmable non-volatile memory elem...
- Patent number 9,466,790
- Issue date Oct 11, 2016
- SanDisk Technologies LLC
- George Samachisa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory elements and cross point switches and arrays for same using...
- Patent number 9,406,349
- Issue date Aug 2, 2016
- Nantero Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...
- Patent number 9,287,356
- Issue date Mar 15, 2016
- Nantero Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...
- Patent number 9,196,615
- Issue date Nov 24, 2015
- Nantero Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three-dimensional array of re-programmable non-volatile memory elem...
- Patent number 9,190,134
- Issue date Nov 17, 2015
- Sandisk 3D LLC
- George Samachisa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memristors with asymmetric electrodes
- Patent number 9,171,613
- Issue date Oct 27, 2015
- Hewlett-Packard Development Company, L.P.
- Alexandre M. Bratkovski
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory structures having shared pillar memory cells
- Patent number 9,076,518
- Issue date Jul 7, 2015
- Sandisk 3D LLC
- Roy E. Scheuerlein
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable read-only memory device and method of writing the same
- Patent number 9,047,957
- Issue date Jun 2, 2015
- Thomson Licensing
- Holger Kropp
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field programmable read-only memory device
- Patent number 8,923,029
- Issue date Dec 30, 2014
- Thomson Licensing
- Meinolf Blawat
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory elements and cross point switches and arrays of same using n...
- Patent number 8,809,917
- Issue date Aug 19, 2014
- Nantero Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory arrays using nanotube articles with reprogrammable resistance
- Patent number 8,580,586
- Issue date Nov 12, 2013
- Nantero Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of programming a nonvolatile memory cell by reverse biasing...
- Patent number 8,547,725
- Issue date Oct 1, 2013
- Sandisk 3D LLC
- Tanmay Kumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...
- Patent number 8,513,768
- Issue date Aug 20, 2013
- Nantero Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for increasing carbon nano-tube (CNT) yield in memory devices
- Patent number 8,431,417
- Issue date Apr 30, 2013
- Sandisk 3D LLC
- April D. Schricker
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three-dimensional array of re-programmable non-volatile memory elem...
- Patent number 8,351,236
- Issue date Jan 8, 2013
- Sandisk 3D LLC
- Tianhong Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Page register outside array and sense amplifier interface
- Patent number 8,223,525
- Issue date Jul 17, 2012
- Sandisk 3D LLC
- Gopinath Balakrishnan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...
- Patent number 8,217,490
- Issue date Jul 10, 2012
- Nantero Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR EFFICIENT MATRIX MULTIPLICATION
- Publication number 20210216610
- Publication date Jul 15, 2021
- Rain Neuromorphics Inc.
- Jack David Kendall
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS AND METHODS FOR EFFICIENT MATRIX MULTIPLICATION
- Publication number 20200042572
- Publication date Feb 6, 2020
- Rain Neuromorphics Inc.
- Jack David Kendall
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS AND METHODS FOR EFFICIENT MATRIX MULTIPLICATION
- Publication number 20190311018
- Publication date Oct 10, 2019
- Jack David Kendall
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Double Density Nonvolatile Nanotube Switch Memory Cells
- Publication number 20190051651
- Publication date Feb 14, 2019
- Nantero, Inc.
- Claude L. BERTIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Three-Dimensional Arrays of Two Terminal Nanotube Switching...
- Publication number 20180182759
- Publication date Jun 28, 2018
- Nantero, Inc.
- Claude L. BERTIN
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nonvolatile Nanotube Switches and Systems Using Same
- Publication number 20180025779
- Publication date Jan 25, 2018
- Nantero, Inc.
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Memory Elements and Cross Point Switches and Arrays for Same Using...
- Publication number 20140241023
- Publication date Aug 28, 2014
- Claude L. Bertin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...
- Publication number 20140192595
- Publication date Jul 10, 2014
- SanDisk 3D LLC
- George Samachisa
- B82 - NANO-TECHNOLOGY
Information Patent Application
THREE-DIMENSIONAL ARRAY OF RE-PROGRAMMABLE NON-VOLATILE MEMORY ELEM...
- Publication number 20130121078
- Publication date May 16, 2013
- SanDisk 3D LLC
- Tianhong Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
FIELD PROGRAMMABLE READ-ONLY MEMORY DEVICE
- Publication number 20130039115
- Publication date Feb 14, 2013
- Meinolf Blawat
- B82 - NANO-TECHNOLOGY
Information Patent Application
PROGRAMMABLE READ-ONLY MEMORY DEVICE AND METHOD OF WRITING THE SAME
- Publication number 20130039116
- Publication date Feb 14, 2013
- Holger Kropp
- B82 - NANO-TECHNOLOGY
Information Patent Application
Memristors with Asymmetric Electrodes
- Publication number 20120132880
- Publication date May 31, 2012
- Alexandre M. Bratkovski
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Memory Structures Having Shared Pillar Memory Cells
- Publication number 20120135580
- Publication date May 31, 2012
- Roy E. Scheuerlein
- G11 - INFORMATION STORAGE
Information Patent Application
Two-Terminal Nanotube Devices And Systems And Methods Of Making Same
- Publication number 20110220859
- Publication date Sep 15, 2011
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
PAGE REGISTER OUTSIDE ARRAY AND SENSE AMPLIFIER INTERFACE
- Publication number 20110141788
- Publication date Jun 16, 2011
- Gopinath Balakrishnan
- G11 - INFORMATION STORAGE
Information Patent Application
NANOWIRE-BASED MEMRISTOR DEVICES
- Publication number 20110096589
- Publication date Apr 28, 2011
- Alexandre M. Bratkovski
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL NANOTUBE DEVICES AND SYSTEMS AND METHODS OF MAKING SAME
- Publication number 20110044091
- Publication date Feb 24, 2011
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
Devices Comprising Carbon Nanotubes, And Methods Of Forming Devices...
- Publication number 20100276656
- Publication date Nov 4, 2010
- Nishant Sinha
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...
- Publication number 20100259961
- Publication date Oct 14, 2010
- Luca Fasoli
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...
- Publication number 20100259960
- Publication date Oct 14, 2010
- George Samachisa
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...
- Publication number 20100259962
- Publication date Oct 14, 2010
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Memory Structures Having Shared Pillar Memory Cells
- Publication number 20100155784
- Publication date Jun 24, 2010
- Roy E. Scheuerlein
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING A NONVOLATILE MEMORY CELL BY REVERSE BIASING...
- Publication number 20100142256
- Publication date Jun 10, 2010
- SANDISK 3D LLC
- Tanmay KUMAR
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRIC ELEMENT, SWITCHING ELEMENT, MEMORY ELEMENT, SWITCHING METH...
- Publication number 20100124096
- Publication date May 20, 2010
- Kabushiki Kaisha Toshiba
- Yumiko OYASATO
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MEMORY CELL THAT INCLUDES A CARBON NANO-TUBE REVERSIBLE RESISTANCE-...
- Publication number 20100072445
- Publication date Mar 25, 2010
- SanDisk 3D LLC
- April D. Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENTS AND CROSS POINT SWITCHES AND ARRAYS OF SAME USING N...
- Publication number 20100072042
- Publication date Mar 25, 2010
- Claude L. Bertin
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR INCREASING CARBON NANO-TUBE (CNT) YIELD IN MEMORY DEVICES
- Publication number 20100044671
- Publication date Feb 25, 2010
- SanDisk 3D LLC
- April D. Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING...
- Publication number 20100006812
- Publication date Jan 14, 2010
- SanDisk 3D LLC
- Huiwen Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Cross point memory cell with distributed diodes and method of makin...
- Publication number 20100008124
- Publication date Jan 14, 2010
- SANDISK 3D LLC
- Roy E. Scheuerlein
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MULTI-LEVEL RE-WRITABLE MEMORY CELL INCORPORATING A DI...
- Publication number 20090257267
- Publication date Oct 15, 2009
- Roy E. Scheuerlein
- G11 - INFORMATION STORAGE

Memory cell comprising at least a nanowire and only two terminals

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nonvolatile nanotube switch elements using sidewall contacts

Systems and methods for efficient matrix multiplication

Nonvolatile nanotube switches with reduced switching voltages and c...

Nonvolatile nanotube memory arrays using nonvolatile nanotube block...

Double density nonvolatile nanotube switch memory cells

Systems and methods for efficient matrix multiplication

Memory elements and cross point switches and arrays of same using n...

Nonvolatile nanotube switches and systems using same

Stacked three-dimensional arrays of two terminal nanotube switching...

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...

Non-volatile composite nanoscopic fabric NAND memory arrays and met...

Three-dimensional array of re-programmable non-volatile memory elem...

Two-terminal nanotube devices and systems and methods of making same

Three-dimensional array of re-programmable non-volatile memory elem...

Memory elements and cross point switches and arrays for same using...

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...

Three-dimensional array of re-programmable non-volatile memory elem...

Memristors with asymmetric electrodes

Three-dimensional memory structures having shared pillar memory cells

Programmable read-only memory device and method of writing the same

Field programmable read-only memory device

Memory elements and cross point switches and arrays of same using n...

Memory arrays using nanotube articles with reprogrammable resistance

Method of programming a nonvolatile memory cell by reverse biasing...

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...

Methods for increasing carbon nano-tube (CNT) yield in memory devices

Three-dimensional array of re-programmable non-volatile memory elem...

Page register outside array and sense amplifier interface

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and sys...

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR EFFICIENT MATRIX MULTIPLICATION

SYSTEMS AND METHODS FOR EFFICIENT MATRIX MULTIPLICATION

SYSTEMS AND METHODS FOR EFFICIENT MATRIX MULTIPLICATION

Double Density Nonvolatile Nanotube Switch Memory Cells

Stacked Three-Dimensional Arrays of Two Terminal Nanotube Switching...

Nonvolatile Nanotube Switches and Systems Using Same

Memory Elements and Cross Point Switches and Arrays for Same Using...

Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...

THREE-DIMENSIONAL ARRAY OF RE-PROGRAMMABLE NON-VOLATILE MEMORY ELEM...

FIELD PROGRAMMABLE READ-ONLY MEMORY DEVICE

PROGRAMMABLE READ-ONLY MEMORY DEVICE AND METHOD OF WRITING THE SAME

Memristors with Asymmetric Electrodes

Three-Dimensional Memory Structures Having Shared Pillar Memory Cells

Two-Terminal Nanotube Devices And Systems And Methods Of Making Same

PAGE REGISTER OUTSIDE ARRAY AND SENSE AMPLIFIER INTERFACE

NANOWIRE-BASED MEMRISTOR DEVICES

TWO-TERMINAL NANOTUBE DEVICES AND SYSTEMS AND METHODS OF MAKING SAME

Devices Comprising Carbon Nanotubes, And Methods Of Forming Devices...

Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...

Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...

Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...

Three-Dimensional Memory Structures Having Shared Pillar Memory Cells

METHOD OF PROGRAMMING A NONVOLATILE MEMORY CELL BY REVERSE BIASING...

ELECTRIC ELEMENT, SWITCHING ELEMENT, MEMORY ELEMENT, SWITCHING METH...

MEMORY CELL THAT INCLUDES A CARBON NANO-TUBE REVERSIBLE RESISTANCE-...

MEMORY ELEMENTS AND CROSS POINT SWITCHES AND ARRAYS OF SAME USING N...

METHODS FOR INCREASING CARBON NANO-TUBE (CNT) YIELD IN MEMORY DEVICES

CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING...

Cross point memory cell with distributed diodes and method of makin...

NON-VOLATILE MULTI-LEVEL RE-WRITABLE MEMORY CELL INCORPORATING A DI...