Memory core region

Industry

CPC
H01L27/1159

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/1159Memory core region

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Ephemeral storage elements, circuits, and systems
- Patent number 11,783,898
- Issue date Oct 10, 2023
- Jonker LLC
- John Nicholas Gross
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory structure and method of manufacturing the same
- Patent number 11,683,936
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, semiconductor device and manufacturing method of the...
- Patent number 11,678,492
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including ferroelectric layer
- Patent number 11,677,025
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Yunseong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with ferroelectric layer and methods of manuf...
- Patent number 11,670,715
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor device and method for producing a memor...
- Patent number 11,672,127
- Issue date Jun 6, 2023
- Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- Bernhard Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 11,672,126
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device structures and methods
- Patent number 11,670,698
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device incorporating hafnium oxide insulative...
- Patent number 11,665,908
- Issue date May 30, 2023
- Kioxia Corporation
- Haruka Sakuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of operating the semiconduct...
- Patent number 11,659,715
- Issue date May 23, 2023
- SK hynix Inc.
- Kun Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device film stacks with texturing layer, and method o...
- Patent number 11,659,714
- Issue date May 23, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device, manufacturing method of the ferroelect...
- Patent number 11,653,501
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective film deposition and semiconductor feature made...
- Patent number 11,652,148
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array contact structures
- Patent number 11,653,500
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
FeFET with embedded conductive sidewall spacers and process for for...
- Patent number 11,653,502
- Issue date May 16, 2023
- Intel Corporation
- Shriram Shivaraman
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices
- Patent number 11,647,636
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device and method of forming the same
- Patent number 11,647,635
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices and methods of manufacturing thereof
- Patent number 11,647,637
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,647,634
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng-Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,637,126
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 11,631,698
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device, method of manufacturing the same, and...
- Patent number 11,626,498
- Issue date Apr 11, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory device including ferroelectr...
- Patent number 11,616,081
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Chang Hwan Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with ferroelectric material
- Patent number 11,616,080
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric-type semiconductor memory device with hole transfer-t...
- Patent number 11,605,647
- Issue date Mar 14, 2023
- Kioxia Corporation
- Yusuke Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gaps in memory array structures
- Patent number 11,600,520
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Chen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with multiple liners and method for...
- Patent number 11,594,447
- Issue date Feb 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Chia-Hsiang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wakeup-free ferroelectric memory device
- Patent number 11,594,632
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mickey Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, memory cells and semiconductor constructions
- Patent number 11,594,611
- Issue date Feb 28, 2023
- Micron Technology, Inc.
- Durai Vishak Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric memory device containing lattice-ma...
- Patent number 11,594,553
- Issue date Feb 28, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC FIELD EFFECT TRANSISTOR RANDOM ACCE...
- Publication number 20240164107
- Publication date May 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Dongxue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240164112
- Publication date May 16, 2024
- RENESAS ELECTRONICS CORPORATION
- Ryo OGURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPE...
- Publication number 20240105811
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek Anil Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
TCAM WITH HYSTERETIC OXIDE MEMORY CELLS
- Publication number 20240105248
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek Anil Sharma
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20240098992
- Publication date Mar 21, 2024
- SANDISK TECHNOLOGIES LLC
- Tatsuya HINOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE ERASURE
- Publication number 20240088065
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE
- Publication number 20240081077
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Tsun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240074205
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064991
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240064994
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064992
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM-ACCESS MEMORY CELL
- Publication number 20240064997
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING TRANSISTOR STRUCTURE
- Publication number 20240064993
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
- Publication number 20240055518
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240055517
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE
- Publication number 20240049470
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Jun Wu
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE
- Publication number 20240032302
- Publication date Jan 25, 2024
- SK HYNIX INC.
- Woo Cheol LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D LATERAL PATTERNING VIA SELECTIVE DEPOSITION FOR FERROELECTRIC DE...
- Publication number 20240032300
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCT...
- Publication number 20240015965
- Publication date Jan 11, 2024
- SK HYNIX INC.
- Ga Ram CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER
- Publication number 20240008284
- Publication date Jan 4, 2024
- SK HYNIX INC.
- Joong Sik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TEMPLATED CRYSTALLINE FE...
- Publication number 20240008281
- Publication date Jan 4, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING OXIDE CHANNEL LAYER AND FERROELECTRI...
- Publication number 20240008282
- Publication date Jan 4, 2024
- SK HYNIX INC.
- Mir IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240006538
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wu-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME
- Publication number 20230422513
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Wei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230413571
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ling LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413573
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Mir IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-LAST TRI-GATE FEFET
- Publication number 20230413572
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230403863
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ying-Chih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230403858
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE
- Publication number 20230397433
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Fatma Arzum SIMSEK-EGE
- H01 - BASIC ELECTRIC ELEMENTS

Memory core region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ephemeral storage elements, circuits, and systems

Semiconductor memory structure and method of manufacturing the same

Memory device, semiconductor device and manufacturing method of the...

Electronic device including ferroelectric layer

Semiconductor devices with ferroelectric layer and methods of manuf...

Ferroelectric semiconductor device and method for producing a memor...

Three-dimensional memory device and manufacturing method thereof

Three-dimensional memory device structures and methods

Semiconductor memory device incorporating hafnium oxide insulative...

Semiconductor memory device and method of operating the semiconduct...

Ferroelectric device film stacks with texturing layer, and method o...

Ferroelectric memory device, manufacturing method of the ferroelect...

Method of selective film deposition and semiconductor feature made...

Memory array contact structures

FeFET with embedded conductive sidewall spacers and process for for...

Memory devices

Ferroelectric memory device and method of forming the same

Semiconductor memory devices and methods of manufacturing thereof

Three-dimensional memory device and method

Memory device and method of forming the same

Three-dimensional memory device with ferroelectric material

Semiconductor memory device, method of manufacturing the same, and...

Three-dimensional semiconductor memory device including ferroelectr...

Three-dimensional memory device with ferroelectric material

Ferroelectric-type semiconductor memory device with hole transfer-t...

Air gaps in memory array structures

Semiconductor device structure with multiple liners and method for...

Wakeup-free ferroelectric memory device

Transistors, memory cells and semiconductor constructions

Three-dimensional ferroelectric memory device containing lattice-ma...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL FERROELECTRIC FIELD EFFECT TRANSISTOR RANDOM ACCE...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPE...

TCAM WITH HYSTERETIC OXIDE MEMORY CELLS

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

FERROELECTRIC MEMORY DEVICE ERASURE

TRANSISTOR, MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

FERROELECTRIC RANDOM-ACCESS MEMORY CELL

METHOD OF FABRICATING TRANSISTOR STRUCTURE

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE

NON-VOLATILE MEMORY DEVICE

3D LATERAL PATTERNING VIA SELECTIVE DEPOSITION FOR FERROELECTRIC DE...

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF SEMICONDUCT...

SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TEMPLATED CRYSTALLINE FE...

SEMICONDUCTOR DEVICE INCLUDING OXIDE CHANNEL LAYER AND FERROELECTRI...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

GATE-LAST TRI-GATE FEFET

SEMICONDUCTOR DEVICES

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE