Metal-insulator-semiconductor electrodes

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H01L29/49

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/49Metal-insulator-semiconductor electrodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming FinFET devices with a fin top hardmask
- Patent number 12,211,921
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,938
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fish bone structure and methods of formin...
- Patent number 12,211,944
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of semiconductor device and method of manufacture
- Patent number 12,211,701
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 12,211,922
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with threshold voltage modulation layer
- Patent number 12,213,297
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,206,007
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Wen-Wen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted body contact for SOI transistor and amplifier circuit
- Patent number 12,205,954
- Issue date Jan 21, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with intergrated resistor at element region bo...
- Patent number 12,206,019
- Issue date Jan 21, 2025
- Kabushiki Kaisha Toshiba
- Kanako Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for tuning threshold voltage
- Patent number 12,205,850
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of power devices having increased cross over current
- Patent number 12,199,149
- Issue date Jan 14, 2025
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same where semic...
- Patent number 12,199,163
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Munhyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective single diffusion/electrical barrier
- Patent number 12,199,152
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate electrode for applying tensile...
- Patent number 12,198,987
- Issue date Jan 14, 2025
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,199,164
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Che Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,191,304
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor devices in sealants and interconnected with p...
- Patent number 12,191,362
- Issue date Jan 7, 2025
- AOI Electronics Co., Ltd.
- Takashi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with enlarged gate electrode structure and...
- Patent number 12,191,366
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with capped air-gap spacer
- Patent number 12,191,373
- Issue date Jan 7, 2025
- Samsung Electronics Co., Ltd.
- Sangkoo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar I/O and logic semiconductor devices having different wor...
- Patent number 12,191,207
- Issue date Jan 7, 2025
- Intel Corporation
- Roman W. Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,191,209
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,399
- Issue date Jan 7, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Tetsuhiro Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,183,787
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,183,805
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Qiang Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
In-Situ Tungsten for Gate Stack of Multigate Device
- Publication number 20250038002
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED TRENCH GATE WITH MULTIPLE LAYERS FORM IMPROVED PERFORMANC...
- Publication number 20250040229
- Publication date Jan 30, 2025
- Pakal Technologies, Inc.
- Paul Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250040230
- Publication date Jan 30, 2025
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiajun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250040226
- Publication date Jan 30, 2025
- INSTITUTE OF MICORELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Junjie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040207
- Publication date Jan 30, 2025
- Rohm Co., Ltd.
- Yusuke SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20250040233
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Cheng CHING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-SILICIDE STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20250031440
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Domingo Ferrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING TRENCH INTERNAL SPAC...
- Publication number 20250031418
- Publication date Jan 23, 2025
- Samsung Electronics Co., LTD
- Rock-Hyun BAEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...
- Publication number 20250029926
- Publication date Jan 23, 2025
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCT...
- Publication number 20250029836
- Publication date Jan 23, 2025
- KIOXIA Corporation
- Masayuki KITAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031415
- Publication date Jan 23, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Multi-Gate Device With Reduced Contact Resistance And Metho...
- Publication number 20250031419
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD
- Publication number 20250022719
- Publication date Jan 16, 2025
- Hitachi High-Tech Corporation
- Thi-Thuy-Nga NGUYEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL...
- Publication number 20250024685
- Publication date Jan 16, 2025
- Sunrise Memory Corporation
- Jie Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
Methods Of Forming Contact Structure In Semiconductor Devices
- Publication number 20250022925
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022929
- Publication date Jan 16, 2025
- Japan Display Inc.
- Hajime WATAKABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE CONTACT FOR 3D MEMORY WITH CMOS BONDED ARRAY
- Publication number 20250022935
- Publication date Jan 16, 2025
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022930
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sunjung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH IMPROVED THERMAL STABILITY
- Publication number 20250022934
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015158
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SPACER AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015164
- Publication date Jan 9, 2025
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SPACER AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015163
- Publication date Jan 9, 2025
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015170
- Publication date Jan 9, 2025
- Fuji Electric Co., Ltd.
- Yuta SHINODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015202
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Mitsuhide KORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR CARBON NANOTUBE AND MANUFAC...
- Publication number 20250006826
- Publication date Jan 2, 2025
- NANYA TECHNOLOGY CORPORATION
- Wei-Chuan FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...
- Publication number 20250006829
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...
- Publication number 20250006795
- Publication date Jan 2, 2025
- Fuji Electric Co., Ltd.
- Naruhisa NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF, INTEGRATED CIR...
- Publication number 20250006833
- Publication date Jan 2, 2025
- Huawei Digital Power Technologies Co., Ltd.
- Runtao Ning
- H01 - BASIC ELECTRIC ELEMENTS

Metal-insulator-semiconductor electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and a method for fabricating the same

Method for forming FinFET devices with a fin top hardmask

FinFET device and method of forming same

Semiconductor device with fish bone structure and methods of formin...

Semiconductor device and manufacturing method thereof

Integrated circuit devices having highly integrated NMOS and PMOS t...

Semiconductor device having a doped fin well

Method for manufacturing FinFETs by fin-recessing processes to form...

Gate structure of semiconductor device and method of manufacture

Field effect transistors comprising a matrix of gate-all-around cha...

Gate air spacer for fin-like field effect transistor

Semiconductor devices with threshold voltage modulation layer

Semiconductor device and method for fabricating the same

Butted body contact for SOI transistor and amplifier circuit

Semiconductor device with intergrated resistor at element region bo...

Gate structures for tuning threshold voltage

Manufacture of power devices having increased cross over current

Semiconductor device and method of fabricating the same where semic...

Selective single diffusion/electrical barrier

Semiconductor device including gate electrode for applying tensile...

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device and a semiconductor...

Stacked semiconductor devices in sealants and interconnected with p...

Semiconductor structure with enlarged gate electrode structure and...

Method of forming a semiconductor device with capped air-gap spacer

Non-planar I/O and logic semiconductor devices having different wor...

Semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device with silicide gate fill structure

Semiconductor device and manufacturing method thereof

Patents Applicationslast 30 patents

In-Situ Tungsten for Gate Stack of Multigate Device

INSULATED TRENCH GATE WITH MULTIPLE LAYERS FORM IMPROVED PERFORMANC...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

MULTI-SILICIDE STACKED FIELD-EFFECT TRANSISTORS

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING TRENCH INTERNAL SPAC...

METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCT...

SEMICONDUCTOR DEVICE

Stacked Multi-Gate Device With Reduced Contact Resistance And Metho...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

ETCHING METHOD

MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL...

Methods Of Forming Contact Structure In Semiconductor Devices

SEMICONDUCTOR DEVICE

SOURCE CONTACT FOR 3D MEMORY WITH CMOS BONDED ARRAY

SEMICONDUCTOR DEVICE

TRANSISTORS WITH IMPROVED THERMAL STABILITY

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH SPACER AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH SPACER AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR CARBON NANOTUBE AND MANUFAC...

SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...

SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF, INTEGRATED CIR...