Microstructure

Industry

CPC
H01L21/0259

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0259Microstructure

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Channel structures including doped 2D materials for semiconductor d...
- Patent number 12,243,934
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature for multigate device performance and method of...
- Patent number 12,243,912
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain recess formation with metal-comprising maski...
- Patent number 12,243,783
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having backside gate contact
- Patent number 12,243,823
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming source/drain features
- Patent number 12,237,232
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-FET transistor with alternating nanostructures and method of f...
- Patent number 12,237,399
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-En Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features with improved strain properties
- Patent number 12,237,414
- Issue date Feb 25, 2025
- Taiwan Semicondcutor Manufacturing Co., Ltd.
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,237,224
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co. LTD
- Wei-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 12,237,325
- Issue date Feb 25, 2025
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 12,230,634
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Organoaminosilane precursors and methods for depositing films compr...
- Patent number 12,230,496
- Issue date Feb 18, 2025
- VERSUM MATERIALS US, LLC
- Mark Leonard O'Neill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a beta-Ga2O3-based single crystal film by f...
- Patent number 12,230,500
- Issue date Feb 18, 2025
- Tamura Corporation
- Quang Tu Thieu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystalline silicon stack formation and bonding to a cmos wafer
- Patent number 12,224,201
- Issue date Feb 11, 2025
- Micron Technology, Inc.
- Si-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting display device and manufacturing method thereof
- Patent number 12,225,770
- Issue date Feb 11, 2025
- Samsung Display Co., Ltd.
- Keun Woo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride substrate with oxygen gradient, method of making,...
- Patent number 12,224,172
- Issue date Feb 11, 2025
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain silicide for multigate device performance and method o...
- Patent number 12,218,214
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with backside interconnections and method of mak...
- Patent number 12,218,057
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,211,942
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Soojin Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip manufacturing method
- Patent number 12,211,754
- Issue date Jan 28, 2025
- STMicroelectronics S.r.l.
- Pierpaolo Monge Roffarello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with threshold voltage modulation layer
- Patent number 12,213,297
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channel pattern formed of stacked semicon...
- Patent number 12,211,941
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Donghyuk Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoscale thin film structure and implementing method thereof
- Patent number 12,205,986
- Issue date Jan 21, 2025
- KOREA ADVANCED NANO FAB CENTER
- Dong Hwan Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including backside conductive vias
- Patent number 12,205,997
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam free isolation structures and method for making the same
- Patent number 12,199,097
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two transistor gain cell memory with indium gallium zinc oxide
- Patent number 12,191,135
- Issue date Jan 7, 2025
- Intel Corporation
- Shigeki Tomishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with reduced source/drain contact resist...
- Patent number 12,191,151
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors having at least 50% grain boundaries offset be...
- Patent number 12,191,354
- Issue date Jan 7, 2025
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low Ge isolated epitaxial layer growth over nano-sheet architecture...
- Patent number 12,191,393
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yan-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250081587
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Epitaxy
- Publication number 20250079165
- Publication date Mar 6, 2025
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072107
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- SUNGIL PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250072028
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250063823
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kam-Tou SIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...
- Publication number 20250054765
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Passivation Layer
- Publication number 20250046603
- Publication date Feb 6, 2025
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20250046656
- Publication date Feb 6, 2025
- Socpra Sciences et Genie s.e.c.
- Thierno Mamoudou DIALLO
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- Publication number 20250031446
- Publication date Jan 23, 2025
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING A MOLYBDENUM METAL FILM ON A DIELECTRIC SURF...
- Publication number 20250029834
- Publication date Jan 23, 2025
- ASM IP HOLDING B.V.
- Bhushan Zope
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT
- Publication number 20250029925
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO TRANSISTOR GAIN CELL MEMORY WITH INDIUM GALLIUM ZINC OXIDE
- Publication number 20250031453
- Publication date Jan 23, 2025
- Intel Corporation
- Shigeki TOMISHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM FORMING APPARATUS AND FILM FORMING METHOD, AND OXIDE SEMICONDU...
- Publication number 20240425982
- Publication date Dec 26, 2024
- Shin-Etsu Chemical Co., Ltd.
- Takahiro SAKATSUME
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE
- Publication number 20240429047
- Publication date Dec 26, 2024
- SICOXS CORPORATION
- Kuniaki YAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR
- Publication number 20240426026
- Publication date Dec 26, 2024
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
PATTERNING USING MONOMER BASED SACRIFICIAL MATERIAL LIFTOFF
- Publication number 20240412973
- Publication date Dec 12, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Nathaniel P. Wyckoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHOWERHEAD HEATED BY CIRCULAR ARRAY
- Publication number 20240408621
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Shashidhara Patel H B
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413252
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seungmin SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELE...
- Publication number 20240405091
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Junhyoung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING COUNTER-DOPED STRUCTURES
- Publication number 20240405075
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FE...
- Publication number 20240395901
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20240395547
- Publication date Nov 28, 2024
- UNIVERSITY OF TSUKUBA
- Kaoru TOKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING CHANNEL STRUCTURES INCLUDING DOPED 2D MATERI...
- Publication number 20240395918
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER
- Publication number 20240397694
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240395793
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kam-Tou SIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Devices with Varying Channel Layers
- Publication number 20240387743
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuan-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CH...
- Publication number 20240387171
- Publication date Nov 21, 2024
- ZING SEMICONDUCTOR CORPORATION
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE FOR MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20240387670
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Feng YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE ARCHITECTURE FOR CELL-HEIGHT SCALING
- Publication number 20240387541
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Microstructure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Channel structures including doped 2D materials for semiconductor d...

Source/drain feature for multigate device performance and method of...

Epitaxial source/drain recess formation with metal-comprising maski...

Semiconductor device having backside gate contact

Methods for forming source/drain features

Nano-FET transistor with alternating nanostructures and method of f...

Source/drain features with improved strain properties

Semiconductor device and method

Three-dimensional field effect device

Semiconductor devices and methods of fabricating the same

Organoaminosilane precursors and methods for depositing films compr...

Method of manufacturing a beta-Ga2O3-based single crystal film by f...

Single crystalline silicon stack formation and bonding to a cmos wafer

Light emitting display device and manufacturing method thereof

Group III nitride substrate with oxygen gradient, method of making,...

Three-dimensional semiconductor device and method of fabricating th...

Source/drain silicide for multigate device performance and method o...

Integrated circuit with backside interconnections and method of mak...

Semiconductor devices

Integrated circuit devices having highly integrated NMOS and PMOS t...

Semiconductor chip manufacturing method

Semiconductor devices with threshold voltage modulation layer

Semiconductor device with channel pattern formed of stacked semicon...

Nanoscale thin film structure and implementing method thereof

Integrated circuit including backside conductive vias

Seam free isolation structures and method for making the same

Two transistor gain cell memory with indium gallium zinc oxide

Gate-all-around transistor with reduced source/drain contact resist...

Vertical transistors having at least 50% grain boundaries offset be...

Low Ge isolated epitaxial layer growth over nano-sheet architecture...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Silicon Carbide Epitaxy

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME

INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...

Atomic Layer Deposition of Passivation Layer

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS

METHODS FOR DEPOSITING A MOLYBDENUM METAL FILM ON A DIELECTRIC SURF...

SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT

TWO TRANSISTOR GAIN CELL MEMORY WITH INDIUM GALLIUM ZINC OXIDE

FILM FORMING APPARATUS AND FILM FORMING METHOD, AND OXIDE SEMICONDU...

METHOD FOR PRODUCING POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE

COMPOSITE SILICON CARBIDE SUBSTRATE AND PREPARATION METHOD THEREFOR

PATTERNING USING MONOMER BASED SACRIFICIAL MATERIAL LIFTOFF

SHOWERHEAD HEATED BY CIRCULAR ARRAY

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELE...

SEMICONDUCTOR DEVICES HAVING COUNTER-DOPED STRUCTURES

SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FE...

SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

METHOD FOR FABRICATING CHANNEL STRUCTURES INCLUDING DOPED 2D MATERI...

SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER

INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

Multigate Devices with Varying Channel Layers

STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CH...

GATE STRUCTURE FOR MULTI-GATE DEVICE AND RELATED METHODS

NANOSHEET DEVICE ARCHITECTURE FOR CELL-HEIGHT SCALING