Monocristalline silicon transistors on insulating substrates

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H01L29/66772

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66772Monocristalline silicon transistors on insulating substrates

Industries

Patents Grantslast 30 patents

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Patents Applicationslast 30 patents

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Monocristalline silicon transistors on insulating substrates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor devices and method of manufacturing the same

MOS transistor having substantially parallelepiped-shaped insulatin...

Semiconductor and method of manufacturing the same

Wrap around silicide for FinFETs

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Thin film transistor including a dielectric diffusion barrier and m...

Method of forming source/drain regions with expanded widths

Multi-threshold voltage devices and associated techniques and confi...

Semiconductor device having a necked semiconductor body and method...

Manufacturing method of semiconductor device including field-effect...

Semiconductor-on-insulator (SOI) semiconductor structures including...

Silicon on insulator device with partially recessed gate

Semiconductor devices and method of manufacturing the same

Method for forming semiconductor device structure with nanowires

Selective low temperature epitaxial deposition process

Methods of manufacturing thin film transistor, biometric device, an...

Method for fabricating field-effect transistor

Field-effect transistor

Strained nanowire CMOS device and method of forming

Semiconductor device having a necked semiconductor body and method...

Method for manufacturing semiconductor device with spacer layer

Semiconductor devices

Device for sequencing

Method of manufacturing a semiconductor device and a semiconductor...

Cascode amplifier optimization

Semiconductor device and method of manufacturing the same

High dose implantation for ultrathin semiconductor-on-insulator sub...

Vertical nanowire semiconductor device and manufacturing method the...

Gate all around fin field effect transistor

Patents Applicationslast 30 patents

MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME

MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...

THIN FILM TRANSISTOR INCLUDING A DIELECTRIC DIFFUSION BARRIER AND M...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR-ON-INSULATOR (SOI) SEMICONDUCTOR STRUCTURES INCLUDING...

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

VERTICAL CHANNEL THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING...

METHOD FOR PRODUCING DOPED TRANSISTOR SOURCE AND DRAIN

SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS

SEMICONDUCTOR DEVICES

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

HIGH DOSE IMPLANTATION FOR ULTRATHIN SEMICONDUCTOR-ON-INSULATOR SUB...

SEMICONDUCTOR-ON-INSULATOR (SOI) SEMICONDUCTOR STRUCTURES INCLUDING...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

STRAINED SEMICONDUCTOR ON INSULATOR (SSOI) BASED GATE ALL AROUND (G...

GLASS SUBSTRATE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

1T1R MEMORY WITH A 3D STRUCTURE

EPITAXIAL GROWTH METHODS AND STRUCTURES THEREOF

STRUCTURE FOR RADIO FREQUENCY APPLICATIONS

SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME

Wrap Around Silicide for FinFETs

SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE

SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME

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NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS