MQW barrier reflection layers

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

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H01S5/2013MQW barrier reflection layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Vertical-cavity surface-emitting laser fabrication on large wafer
- Patent number 11,588,299
- Issue date Feb 21, 2023
- Mellanox Technologies, Ltd.
- Vladimir Iakovlev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical cavity light emitting element
- Patent number 10,381,804
- Issue date Aug 13, 2019
- Stanley Electric Co., Ltd.
- Komei Tazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chip-scale power scalable ultraviolet optical source
- Patent number 9,800,018
- Issue date Oct 24, 2017
- HRL Laboratories, LLC
- Keyvan Sayyah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical modulator having reflection layers
- Patent number 9,740,032
- Issue date Aug 22, 2017
- Samsung Electronics Co., Ltd.
- Changyoung Park
- G02 - OPTICS
Information Patent Grant
Method of fabricating optical devices using laser treatment
- Patent number 9,048,170
- Issue date Jun 2, 2015
- Soraa Laser Diode, Inc.
- Nicholas J. Pfister
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiquantum well structures for suppression of electron leakage an...
- Patent number 8,848,754
- Issue date Sep 30, 2014
- Wisconsin Alumni Research Foundation
- Dan Botez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device, its manufacturing method, semi...
- Patent number 8,587,004
- Issue date Nov 19, 2013
- Sony Corporation
- Osamu Goto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting device, its manufacturing method, semi...
- Patent number 8,460,958
- Issue date Jun 11, 2013
- Sony Corporation
- Osamu Goto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Red surface emitting laser element, image forming device, and image...
- Patent number 8,116,344
- Issue date Feb 14, 2012
- Canon Kabushiki Kaisha
- Tetsuya Takeuchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Laser diode with high indium active layer and lattice matched cladd...
- Patent number 8,000,366
- Issue date Aug 16, 2011
- Palo Alto Research Center Incorporated
- David P. Bour
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting device, its manufacturing method, semi...
- Patent number 7,964,419
- Issue date Jun 21, 2011
- Sony Corporation
- Osamu Goto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-V group GaN-based compound semiconductor device
- Patent number 7,826,505
- Issue date Nov 2, 2010
- Samsung LED Co., Ltd.
- Joong-kon Son
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Red surface emitting laser element, image forming device, and image...
- Patent number 7,809,040
- Issue date Oct 5, 2010
- Canon Kabushiki Kaisha
- Tetsuya Takeuchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting device, its manufacturing method, semi...
- Patent number 7,439,546
- Issue date Oct 21, 2008
- Sony Corporation
- Osamu Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device, its manufacturing method, semi...
- Patent number 7,339,195
- Issue date Mar 4, 2008
- Sony Corporation
- Osamu Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device producing red wavelength optica...
- Patent number 6,829,271
- Issue date Dec 7, 2004
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device using graded multi quantum barrier
- Patent number 6,803,597
- Issue date Oct 12, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Chikara Watatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device
- Patent number 6,785,311
- Issue date Aug 31, 2004
- Sharp Kabushiki Kaisha
- Stephen Peter Najda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light emitting device
- Patent number 6,744,064
- Issue date Jun 1, 2004
- Samsung Electro-Mechanics Co., Ltd.
- Sung-nam Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductors separate confinement superlattice optoelectron...
- Patent number 6,570,179
- Issue date May 27, 2003
- MP Technologies, LLC
- Manijeh Razeghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device producing red wavelength optica...
- Patent number 6,542,528
- Issue date Apr 1, 2003
- Ricoh Company, Ltd.
- Shunichi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device with a quantum-wave interference layer
- Patent number 6,486,490
- Issue date Nov 26, 2002
- Canare Electric Co., Ltd.
- Hiroyuki Kano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device with partial reflection quantum...
- Patent number 6,476,412
- Issue date Nov 5, 2002
- Canare Electric Co., Ltd.
- Hiroyuki Kano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device with quantum-wave interference...
- Patent number 6,420,727
- Issue date Jul 16, 2002
- Canare Electric Co., Ltd.
- Hiroyuki Kano
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with quantum-wave interference layers
- Patent number 6,417,520
- Issue date Jul 9, 2002
- Canare Electric Co., Ltd.
- Hiroyuki Kano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 6,356,572
- Issue date Mar 12, 2002
- Hitachi, Ltd.
- Toshiaki Tanaka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices with quantum-wave interference layers
- Patent number 6,175,123
- Issue date Jan 16, 2001
- Canare Electric Co., Ltd.
- Hiroyuki Kano
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,141,364
- Issue date Oct 31, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,081,541
- Issue date Jun 27, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,072,817
- Issue date Jun 6, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL-CAVITY SURFACE-EMITTING LASER FABRICATION ON LARGE WAFER
- Publication number 20210313770
- Publication date Oct 7, 2021
- MELLANOX TECHNOLOGIES, LTD.
- Vladimir Iakovlev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Well Structure for Polarized Semiconductors
- Publication number 20210203134
- Publication date Jul 1, 2021
- John Wasserbauer
- John Wasserbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONIC DEVICES WITH EMBEDDED HOLE INJECTION LAYER TO IMPROVE EFFI...
- Publication number 20150055671
- Publication date Feb 26, 2015
- TSMC Solid State Lighting Ltd.
- Zhen-Yu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIQUANTUM WELL STRUCTURES FOR SUPPRESSION OF ELECTRON LEAKAGE AN...
- Publication number 20140247850
- Publication date Sep 4, 2014
- Dan Botez
- B82 - NANO-TECHNOLOGY
Information Patent Application
Lasers With InGaAsP Quantum Wells And GaAsP Barrier Layers
- Publication number 20140198817
- Publication date Jul 17, 2014
- Finisar Corporation
- Ralph H. Johnson
- B82 - NANO-TECHNOLOGY
Information Patent Application
Photonic Devices with Embedded Hole Injection Layer to Improve Effi...
- Publication number 20140077153
- Publication date Mar 20, 2014
- TSMC Solid State Lighting Ltd.
- Zhen-Yu Li
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of Fabricating Optical Devices Using Laser Treatment
- Publication number 20130234111
- Publication date Sep 12, 2013
- SORAA, INC.
- Nicholas J. Pfister
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMI...
- Publication number 20130230936
- Publication date Sep 5, 2013
- SONY CORPORATION
- OSAMU GOTO
- B82 - NANO-TECHNOLOGY
Information Patent Application
HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RAD...
- Publication number 20130100978
- Publication date Apr 25, 2013
- The Regents of the University of California
- Matthew T. Hardy
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMI...
- Publication number 20110183452
- Publication date Jul 28, 2011
- SONY CORPORATION
- Osamu Goto
- B82 - NANO-TECHNOLOGY
Information Patent Application
RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE...
- Publication number 20100322669
- Publication date Dec 23, 2010
- Canon Kabushiki Kaisha
- Tetsuya Takeuchi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Gallium nitride based semiconductor laser device
- Publication number 20100238963
- Publication date Sep 23, 2010
- KABUSHIKI KAISHA TOSHIBA
- Akira Tanaka
- B82 - NANO-TECHNOLOGY
Information Patent Application
Laser Diode With High Indium Active Layer And Lattice Matched Cladd...
- Publication number 20100127236
- Publication date May 27, 2010
- Palo Alto Research Center Incorporated
- David P. Bour
- B82 - NANO-TECHNOLOGY
Information Patent Application
RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE...
- Publication number 20090252532
- Publication date Oct 8, 2009
- Canon Kabushiki Kaisha
- Tetsuya Takeuchi
- B82 - NANO-TECHNOLOGY
Information Patent Application
RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE...
- Publication number 20080212631
- Publication date Sep 4, 2008
- Canon Kabushiki Kaisha
- Tetsuya Takeuchi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Light Emitting Device, Its Manufacturing Method, Semi...
- Publication number 20080108160
- Publication date May 8, 2008
- SONY CORPORATION
- Osamu Goto
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-V Group GaN-based compound semiconductor device
- Publication number 20060273300
- Publication date Dec 7, 2006
- Samsung Electronics Co., Ltd.
- Joong-kon Son
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Light Emitting Device, its Manufacturing Method, Semi...
- Publication number 20060273326
- Publication date Dec 7, 2006
- Osamu Goto
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light emitting device, its manufacturing method, semi...
- Publication number 20040056259
- Publication date Mar 25, 2004
- Osamu Goto
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light-emitting device using graded multi quantum barrier
- Publication number 20030197188
- Publication date Oct 23, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Chikara Watatani
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting semiconductor device producing red wavelength optica...
- Publication number 20030138015
- Publication date Jul 24, 2003
- Shunichi Sato
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-V semiconductors separate confinement superlattice optoelectron...
- Publication number 20030005880
- Publication date Jan 9, 2003
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor light emitting device
- Publication number 20010030317
- Publication date Oct 18, 2001
- Sung-nam Lee
- B82 - NANO-TECHNOLOGY

MQW barrier reflection layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Vertical-cavity surface-emitting laser fabrication on large wafer

Vertical cavity light emitting element

Chip-scale power scalable ultraviolet optical source

Optical modulator having reflection layers

Method of fabricating optical devices using laser treatment

Multiquantum well structures for suppression of electron leakage an...

Semiconductor light emitting device, its manufacturing method, semi...

Semiconductor light emitting device, its manufacturing method, semi...

Red surface emitting laser element, image forming device, and image...

Laser diode with high indium active layer and lattice matched cladd...

Semiconductor light emitting device, its manufacturing method, semi...

III-V group GaN-based compound semiconductor device

Red surface emitting laser element, image forming device, and image...

Semiconductor light emitting device, its manufacturing method, semi...

Semiconductor light emitting device, its manufacturing method, semi...

Light-emitting semiconductor device producing red wavelength optica...

Semiconductor light-emitting device using graded multi quantum barrier

Optical semiconductor device

Nitride semiconductor light emitting device

III-V semiconductors separate confinement superlattice optoelectron...

Light-emitting semiconductor device producing red wavelength optica...

Light-emitting device with a quantum-wave interference layer

Light emitting semiconductor device with partial reflection quantum...

Light-emitting semiconductor device with quantum-wave interference...

Semiconductor device with quantum-wave interference layers

Semiconductor light emitting device

Semiconductor devices with quantum-wave interference layers

Semiconductor laser device and optical disk apparatus using the same

Semiconductor laser device and optical disk apparatus using the same

Semiconductor laser device and optical disk apparatus using the same

Patents Applicationslast 30 patents

VERTICAL-CAVITY SURFACE-EMITTING LASER FABRICATION ON LARGE WAFER

Quantum Well Structure for Polarized Semiconductors

PHOTONIC DEVICES WITH EMBEDDED HOLE INJECTION LAYER TO IMPROVE EFFI...

MULTIQUANTUM WELL STRUCTURES FOR SUPPRESSION OF ELECTRON LEAKAGE AN...

Lasers With InGaAsP Quantum Wells And GaAsP Barrier Layers

Photonic Devices with Embedded Hole Injection Layer to Improve Effi...

Method of Fabricating Optical Devices Using Laser Treatment

SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMI...

HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RAD...

SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMI...

RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE...

Gallium nitride based semiconductor laser device

Laser Diode With High Indium Active Layer And Lattice Matched Cladd...

RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE...

RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE...

Semiconductor Light Emitting Device, Its Manufacturing Method, Semi...

III-V Group GaN-based compound semiconductor device

Semiconductor Light Emitting Device, its Manufacturing Method, Semi...

Semiconductor light emitting device, its manufacturing method, semi...

Semiconductor light-emitting device using graded multi quantum barrier

Light-emitting semiconductor device producing red wavelength optica...

III-V semiconductors separate confinement superlattice optoelectron...

Nitride semiconductor light emitting device