Multilevel magnetic memory cell using non-magnetic non-conducting interlayer

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CPC
G11C2211/5615

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C2211/5615Multilevel magnetic memory cell using non-magnetic non-conducting interlayer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction device and method of forming same
- Patent number 11,990,167
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jhih Shen
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,957,064
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,930,645
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,849,648
- Issue date Dec 19, 2023
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,600,661
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,508,904
- Issue date Nov 22, 2022
- United Microelectronics Corp.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structured pedestal for MTJ containing devices
- Patent number 11,502,243
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Nathan P. Marchack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 11,417,378
- Issue date Aug 16, 2022
- TOHOKU UNIVERSITY
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Reinforced single element bottom electrode for MTJ-containing devices
- Patent number 11,152,563
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having magnetic tunnel junction (MTJ) stack
- Patent number 11,127,788
- Issue date Sep 21, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Baohua Niu
- G01 - MEASURING TESTING
Information Patent Grant
Back-side memory element with local memory select transistor
- Patent number 11,101,318
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,063,206
- Issue date Jul 13, 2021
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method of forming same
- Patent number 11,043,251
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jhih Shen
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,037,982
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G01 - MEASURING TESTING
Information Patent Grant
Multi-state memory and method for manufacturing the same
- Patent number 10,991,877
- Issue date Apr 27, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Meiyin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive stacks and methods therefor
- Patent number 10,971,545
- Issue date Apr 6, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Sanjeev Aggarwal
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunable tetragonal ferrimagnetic heusler compound with PMA and high...
- Patent number 10,937,953
- Issue date Mar 2, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic wall utilization-analog memory element and magnetic wall u...
- Patent number 10,892,009
- Issue date Jan 12, 2021
- TDK Corporation
- Tomoyuki Sasaki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive device and method of fabricating same
- Patent number 10,797,224
- Issue date Oct 6, 2020
- Imec VZW
- Praveen Raghavan
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional arrays with MTJ devices including a free magnetic...
- Patent number 10,784,437
- Issue date Sep 22, 2020
- Spin Memory, Inc.
- Satoru Araki
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional arrays with magnetic tunnel junction devices incl...
- Patent number 10,734,573
- Issue date Aug 4, 2020
- Spin Memory, Inc.
- Satoru Araki
- G11 - INFORMATION STORAGE
Information Patent Grant
Read-out techniques for multi-bit cells
- Patent number 10,692,569
- Issue date Jun 23, 2020
- Spin Memory, Inc.
- Michail Tzoufras
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance device and method for forming the same
- Patent number 10,629,802
- Issue date Apr 21, 2020
- United Microelectronics Corp.
- Chiu-Jung Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage device, information processing apparatus, and storage devic...
- Patent number 10,586,578
- Issue date Mar 10, 2020
- Sony Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with enhanced tunneling magnetoresistance ratio, memor...
- Patent number 10,541,014
- Issue date Jan 21, 2020
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit line structures for three-dimensional arrays with magnetic tunn...
- Patent number 10,529,915
- Issue date Jan 7, 2020
- Spin Memory, Inc.
- Satoru Araki
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetoresistive stack/ structure using p...
- Patent number 10,483,460
- Issue date Nov 19, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Kerry Joseph Nagel
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic wall utilization-analog memory element and magnetic wall u...
- Patent number 10,453,523
- Issue date Oct 22, 2019
- TDK Corporation
- Tomoyuki Sasaki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor devices and semiconductor packages including magnetic...
- Patent number 10,453,801
- Issue date Oct 22, 2019
- Samsung Electronics Co., Ltd.
- Bo-young Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Back-side memory element with local memory select transistor
- Patent number 10,446,606
- Issue date Oct 15, 2019
- International Business Machines Corporation
- Arvind Kumar
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240081157
- Publication date Mar 7, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074328
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction Device and Method of Forming Same
- Publication number 20240021230
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Jhih Shen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, A...
- Publication number 20230371277
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION
- Publication number 20230225136
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230038528
- Publication date Feb 9, 2023
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
BACK-SIDE MEMORY ELEMENT WITH LOCAL MEMORY SELECT TRANSISTOR
- Publication number 20210313391
- Publication date Oct 7, 2021
- International Business Machines Corporation
- Arvind Kumar
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD OF FORMING SAME
- Publication number 20210312965
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Jhih Shen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION
- Publication number 20210305317
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20210110857
- Publication date Apr 15, 2021
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STATE MEMORY AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20200303635
- Publication date Sep 24, 2020
- INSTITUTE OF MICROELECTRONICS, CHINESES ACADEMY OF SCIENCES
- Meiyin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20200106000
- Publication date Apr 2, 2020
- UNITED MICROELECTRONICS CORP.
- Chiu-Jung Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC WALL UTILIZATION-ANALOG MEMORY ELEMENT AND MAGNETIC WALL U...
- Publication number 20200013457
- Publication date Jan 9, 2020
- TDK Corporation
- Tomoyuki SASAKI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Multi-Bit Cell Read-Out Techniques
- Publication number 20200013454
- Publication date Jan 9, 2020
- Spin Memory, Inc.
- Michail Tzoufras
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
BACK-SIDE MEMORY ELEMENT WITH LOCAL MEMORY SELECT TRANSISTOR
- Publication number 20190259807
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Arvind Kumar
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING A MAGNETIC MEMORY DEVICE HAVING BUFFER LAYER
- Publication number 20190067564
- Publication date Feb 28, 2019
- IMEC vzw
- Johan Swerts
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, INFORMATION PROCESSING APPARATUS, AND STORAGE DEVIC...
- Publication number 20190051338
- Publication date Feb 14, 2019
- SONY CORPORATION
- Tetsuhiro SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC WALL UTILIZATION-ANALOG MEMORY ELEMENT AND MAGNETIC WALL U...
- Publication number 20180350432
- Publication date Dec 6, 2018
- TDK Corporation
- Tomoyuki SASAKI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MEMORY CELLS WITH ENHANCED TUNNELING MAGNETORESISTANCE RATIO, MEMOR...
- Publication number 20180350418
- Publication date Dec 6, 2018
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE DEVICE AND METHOD OF FABRICATING SAME
- Publication number 20180248111
- Publication date Aug 30, 2018
- IMEC vzw
- Praveen Raghavan
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20140328118
- Publication date Nov 6, 2014
- Katsuhiko Hoya
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20140273288
- Publication date Sep 18, 2014
- QUALCOMM Incorporated
- Xia Li
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY
- Publication number 20140192591
- Publication date Jul 10, 2014
- Avalanche Technology, Inc.
- Parviz Keshtbod
- B82 - NANO-TECHNOLOGY
Information Patent Application
MULTI-STATE SPIN-TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20130258764
- Publication date Oct 3, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- G11 - INFORMATION STORAGE
Information Patent Application
High Speed Magnetic Random Access Memory-based Ternary CAM
- Publication number 20130208523
- Publication date Aug 15, 2013
- CROCUS TECHNOLOGY SA
- Jeremy Alvarez-Herault
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-FREE LAYER MTJ AND MULTI-TERMINAL READ CIRCUIT WITH CONCURREN...
- Publication number 20130201757
- Publication date Aug 8, 2013
- QUALCOMM Incorporated
- Xia Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20130062716
- Publication date Mar 14, 2013
- QUALCOMM Incorporated
- Xia Li
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20120243304
- Publication date Sep 27, 2012
- Kabushiki Kaisha Toshiba
- Katsuhiko HOYA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY
- Publication number 20120002463
- Publication date Jan 5, 2012
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY
- Publication number 20120003757
- Publication date Jan 5, 2012
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- G11 - INFORMATION STORAGE

Multilevel magnetic memory cell using non-magnetic non-conducting interlayer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic tunnel junction device and method of forming same

Semiconductor device and method for fabricating the same

Semiconductor structure integrated with magnetic tunneling junction

Semiconductor device and method for fabricating the same

Semiconductor structure integrated with magnetic tunneling junction

Semiconductor device and method for fabricating the same

Structured pedestal for MTJ containing devices

Integrated circuit device

Reinforced single element bottom electrode for MTJ-containing devices

Semiconductor device having magnetic tunnel junction (MTJ) stack

Back-side memory element with local memory select transistor

Semiconductor device and method for fabricating the same

Magnetic tunnel junction device and method of forming same

Semiconductor structure integrated with magnetic tunneling junction

Multi-state memory and method for manufacturing the same

Magnetoresistive stacks and methods therefor

Tunable tetragonal ferrimagnetic heusler compound with PMA and high...

Magnetic wall utilization-analog memory element and magnetic wall u...

Magnetoresistive device and method of fabricating same

Three-dimensional arrays with MTJ devices including a free magnetic...

Three-dimensional arrays with magnetic tunnel junction devices incl...

Read-out techniques for multi-bit cells

Magnetoresistance device and method for forming the same

Storage device, information processing apparatus, and storage devic...

Memory cells with enhanced tunneling magnetoresistance ratio, memor...

Bit line structures for three-dimensional arrays with magnetic tunn...

Method of manufacturing a magnetoresistive stack/ structure using p...

Magnetic wall utilization-analog memory element and magnetic wall u...

Semiconductor devices and semiconductor packages including magnetic...

Back-side memory element with local memory select transistor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Magnetic Tunnel Junction Device and Method of Forming Same

SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, A...

SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

BACK-SIDE MEMORY ELEMENT WITH LOCAL MEMORY SELECT TRANSISTOR

MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD OF FORMING SAME

SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION

INTEGRATED CIRCUIT DEVICE

MULTI-STATE MEMORY AND METHOD FOR MANUFACTURING THE SAME

MAGNETORESISTANCE DEVICE AND METHOD FOR FORMING THE SAME

MAGNETIC WALL UTILIZATION-ANALOG MEMORY ELEMENT AND MAGNETIC WALL U...

Multi-Bit Cell Read-Out Techniques

BACK-SIDE MEMORY ELEMENT WITH LOCAL MEMORY SELECT TRANSISTOR

METHOD OF MANUFACTURING A MAGNETIC MEMORY DEVICE HAVING BUFFER LAYER

STORAGE DEVICE, INFORMATION PROCESSING APPARATUS, AND STORAGE DEVIC...

MAGNETIC WALL UTILIZATION-ANALOG MEMORY ELEMENT AND MAGNETIC WALL U...

MEMORY CELLS WITH ENHANCED TUNNELING MAGNETORESISTANCE RATIO, MEMOR...

MAGNETORESISTIVE DEVICE AND METHOD OF FABRICATING SAME

SEMICONDUCTOR STORAGE DEVICE

METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION DEVICE

HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY

MULTI-STATE SPIN-TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY

High Speed Magnetic Random Access Memory-based Ternary CAM

MULTI-FREE LAYER MTJ AND MULTI-TERMINAL READ CIRCUIT WITH CONCURREN...

METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION DEVICE

SEMICONDUCTOR STORAGE DEVICE

HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY

HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY