Multistep manufacturing processes

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CPC
H01L29/401

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/401Multistep manufacturing processes

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory cell of charge-trapping non-volatile memory
- Patent number 12,199,160
- Issue date Jan 14, 2025
- Ememory Technology Inc.
- Chia-Jung Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device
- Patent number 12,200,940
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Process window control for gate formation in semiconductor devices
- Patent number 12,199,151
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation with reduced dopant loss and increased dimensions
- Patent number 12,199,156
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structure
- Patent number 12,198,985
- Issue date Jan 14, 2025
- Applied Materials, Inc.
- Wenhui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Driver placement in memories having stacked memory arrays
- Patent number 12,200,938
- Issue date Jan 14, 2025
- Haitao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective single diffusion/electrical barrier
- Patent number 12,199,152
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,199,169
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory device having memory cell strings and separate read and writ...
- Patent number 12,200,928
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Haitao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 12,199,155
- Issue date Jan 14, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Wufeng Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device including a buried floating gate and a buried e...
- Patent number 12,199,159
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,200,937
- Issue date Jan 14, 2025
- SK hynix Inc.
- Moon Sik Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit, system and method for rapid retrieval of data sets
- Patent number 12,190,968
- Issue date Jan 7, 2025
- SUNRISE MEMORY CORPORATION
- Eli Harari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Etch method for opening a source line in flash memory
- Patent number 12,193,227
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yong-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate semiconductor device with inner spacer and fabrication m...
- Patent number 12,191,379
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bone-Fong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered structure, semiconductor device including the same, and man...
- Patent number 12,191,389
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,144
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yi Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with reduced source/drain contact resist...
- Patent number 12,191,151
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor devices in sealants and interconnected with p...
- Patent number 12,191,362
- Issue date Jan 7, 2025
- AOI Electronics Co., Ltd.
- Takashi Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of gate contact formation for vertical transistors
- Patent number 12,191,363
- Issue date Jan 7, 2025
- BESANG, INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with enlarged gate electrode structure and...
- Patent number 12,191,366
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with restrained charge migration an...
- Patent number 12,193,233
- Issue date Jan 7, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for silicon carbide gate formation
- Patent number 12,191,360
- Issue date Jan 7, 2025
- Applied Materials, Inc.
- Yi Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thicker corner of a gate dielectric structure around a recessed gat...
- Patent number 12,191,365
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a current spreading region
- Patent number 12,191,385
- Issue date Jan 7, 2025
- Infineon Technologies Austria AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor with a gate structure having a dielectr...
- Patent number 12,183,823
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Neng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure with metal-semico...
- Patent number 12,183,793
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,183,805
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Qiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film deposition method and element including film deposited by the...
- Patent number 12,183,582
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and semiconductor device
- Patent number 12,185,547
- Issue date Dec 31, 2024
- Kioxia Corporation
- Takanobu Ono
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250022922
- Publication date Jan 16, 2025
- Mitsubishi Electric Corporation
- Kohei NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250022950
- Publication date Jan 16, 2025
- Hyundai Motor Company
- Junghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE
- Publication number 20250022932
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiao-Chun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF
- Publication number 20250015156
- Publication date Jan 9, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015158
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Yi-Fan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015146
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yotaro GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION
- Publication number 20250015149
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250017020
- Publication date Jan 9, 2025
- KIOXIA Corporation
- Yoko YOSHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CREATING AN OHMIC CONTACT ON A HIGH-POWER ELECTRICAL DIODE
- Publication number 20250015145
- Publication date Jan 9, 2025
- STMicroelectronics International N.V.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250014988
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHU-CHENG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM TIN GATE-ALL-AROUND DEVICE
- Publication number 20250015140
- Publication date Jan 9, 2025
- Taiwean Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE CONTACT OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTU...
- Publication number 20250015153
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guo-Zhou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250006801
- Publication date Jan 2, 2025
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE
- Publication number 20250006814
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Wolfgang LEHNERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...
- Publication number 20250006784
- Publication date Jan 2, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Subhash Srinivas PIDAPARTHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...
- Publication number 20250006829
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...
- Publication number 20250006802
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF
- Publication number 20250006800
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER
- Publication number 20250006807
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chuan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL
- Publication number 20250006848
- Publication date Jan 2, 2025
- Mianyang HKC Optoelectronics Technology Co., Ltd.
- Xiufeng ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING CRITICAL DIMENSION OF PATTERNS GENERATED USING...
- Publication number 20240429053
- Publication date Dec 26, 2024
- Silicon Laboratories Inc.
- Jiye Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240429302
- Publication date Dec 26, 2024
- NANYA TECHNOLOGY CORPORATION
- Yu-Ping CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240431107
- Publication date Dec 26, 2024
- SK HYNIX INC.
- Jin-Ha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240429303
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Donggon Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONT SIDE OHMIC CONTACT FORMATION FOR SIC DEVICE
- Publication number 20240429286
- Publication date Dec 26, 2024
- STMicroelectronics International N.V.
- Simone RASCUNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...
- Publication number 20240421196
- Publication date Dec 19, 2024
- GaN Systems Inc.
- Abhinandan DIXIT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES
- Publication number 20240421194
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-An LAI
- H01 - BASIC ELECTRIC ELEMENTS

Multistep manufacturing processes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory cell of charge-trapping non-volatile memory

Three-dimensional memory device

Process window control for gate formation in semiconductor devices

Contact formation with reduced dopant loss and increased dimensions

Contact over active gate structure

Driver placement in memories having stacked memory arrays

Selective single diffusion/electrical barrier

Structure and formation method of semiconductor device structure wi...

Memory device having memory cell strings and separate read and writ...

Semiconductor structure and fabrication method thereof

Flash memory device including a buried floating gate and a buried e...

Semiconductor device and method of manufacturing semiconductor device

Memory circuit, system and method for rapid retrieval of data sets

Etch method for opening a source line in flash memory

Multi-gate semiconductor device with inner spacer and fabrication m...

Layered structure, semiconductor device including the same, and man...

Semiconductor device and manufacturing method thereof

Gate-all-around transistor with reduced source/drain contact resist...

Stacked semiconductor devices in sealants and interconnected with p...

Methods of gate contact formation for vertical transistors

Semiconductor structure with enlarged gate electrode structure and...

Three-dimensional memory device with restrained charge migration an...

Methods for silicon carbide gate formation

Thicker corner of a gate dielectric structure around a recessed gat...

Semiconductor device having a current spreading region

Fin field-effect transistor with a gate structure having a dielectr...

Method for forming semiconductor device structure with metal-semico...

Semiconductor device and manufacturing method thereof

Film deposition method and element including film deposited by the...

Semiconductor substrate and semiconductor device

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE

SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION

SEMICONDUCTOR MEMORY DEVICE

METHOD FOR CREATING AN OHMIC CONTACT ON A HIGH-POWER ELECTRICAL DIODE

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

GERMANIUM TIN GATE-ALL-AROUND DEVICE

CONDUCTIVE CONTACT OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTU...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SILICON CARBIDE DEVICE

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...

SEMICONDUCTOR DEVICE WITH METAL GATE STRUCTURE AND FABRICATION METH...

TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...

SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE WITH WRAPAROUND BACKSIDE AMORPHOUS LAYER

ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL

METHOD FOR REDUCING CRITICAL DIMENSION OF PATTERNS GENERATED USING...

MEMORY DEVICE AND FORMING METHOD THEREOF

VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT DEVICE

FRONT SIDE OHMIC CONTACT FORMATION FOR SIC DEVICE

GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...

GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES