Nanowires or nanotubes

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CPC
H01L29/0669

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0669Nanowires or nanotubes

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and forming method thereof
- Patent number 12,176,425
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods
- Patent number 12,171,148
- Issue date Dec 17, 2024
- Microsoft Technology Licensing, LLC
- Kevin Van Hoogdalem
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Graphene/nanostructure FET with self-aligned contact and gate
- Patent number 12,166,106
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Method of manufacturing semiconductor devices including the steps o...
- Patent number 12,151,213
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzu-Ang Chao
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,148,794
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SAG nanowire growth with ion implantation
- Patent number 12,119,224
- Issue date Oct 15, 2024
- Microsoft Technology Licensing, LLC
- Geoffrey C. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around structure with additional silicon layer and method...
- Patent number 12,119,404
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Han Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,119,392
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,087,766
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Sujin Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,795
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Sung Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanorod production method and nanorod produced thereby
- Patent number 12,074,247
- Issue date Aug 27, 2024
- Samsung Display Co., Ltd.
- Young Rag Do
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Back end of line nanowire power switch transistors
- Patent number 12,062,714
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing, Co., Ltd.
- Li-Yang Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,062,696
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure with front side signal lines and backs...
- Patent number 12,051,692
- Issue date Jul 30, 2024
- Intel Corporation
- Quan Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming same
- Patent number 12,051,699
- Issue date Jul 30, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Kui Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating vertically oriented planar structures for adv...
- Patent number 12,051,588
- Issue date Jul 30, 2024
- The Penn State Research Foundation
- Joshua Alexander Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plug and recess process for dual metal gate on stacked nanoribbon d...
- Patent number 12,046,652
- Issue date Jul 23, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with isolating feature
- Patent number 12,040,403
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-silicide structure for a semiconductor device and a method fo...
- Patent number 12,040,375
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including metal-2 dimensional material-semicon...
- Patent number 12,040,360
- Issue date Jul 16, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate patterning process for multi-gate devices
- Patent number 12,021,132
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate isolation feature and manufacturing method thereof
- Patent number 12,021,136
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leave-behind protective layer having secondary purpose
- Patent number 11,996,408
- Issue date May 28, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon nanotube composite, dispersion liquid using same, semiconduc...
- Patent number 11,996,445
- Issue date May 28, 2024
- Toray Industries, Inc.
- Kazuki Isogai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication methods and structures thereof
- Patent number 11,996,334
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of gate-all-around integrated circuit structures having...
- Patent number 11,990,472
- Issue date May 21, 2024
- Intel Corporation
- Leonard P. Guler
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual step etch-back inner spacer formation
- Patent number 11,990,508
- Issue date May 21, 2024
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,978,769
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Kwang-Young Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395905
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER MASKING LAYER AND METHOD OF FORMING SAME
- Publication number 20240395907
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Devices Including The Steps o...
- Publication number 20240390861
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ang Chao
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
THIN FILM TRANSFER USING SUBSTRATE WITH ETCH STOP LAYER AND DIFFUSI...
- Publication number 20240379792
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Eugene I-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND M...
- Publication number 20240379440
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371999
- Publication date Nov 7, 2024
- Samsung Electronics Co., Ltd.
- Sung Min KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240363688
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATING FEATURE
- Publication number 20240355928
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Xuan HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH FRONT SIDE SIGNAL LINES AND BACKS...
- Publication number 20240355819
- Publication date Oct 24, 2024
- Intel Corporation
- Quan SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Isolation Feature and Manufacturing Method Thereof
- Publication number 20240339526
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...
- Publication number 20240332389
- Publication date Oct 3, 2024
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION METHODS AND STRUCTURES THEREOF
- Publication number 20240312845
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240266394
- Publication date Aug 8, 2024
- Samsung Electronics Co., Ltd.
- Kwang-Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240243203
- Publication date Jul 18, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINFET DEVICES
- Publication number 20240234534
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELONGATED CONTACT FOR SOURCE OR DRAIN REGION
- Publication number 20240213324
- Publication date Jun 27, 2024
- Intel Corporation
- Tuhin Guha Neogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS
- Publication number 20240204103
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240178226
- Publication date May 30, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTOMASK PELLICLE AND METHOD OF FORMING THE SAME
- Publication number 20240177994
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YUN-YUE LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING THREE-DIMENSIONAL MEMORY
- Publication number 20240172433
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Feng YOUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS
- Publication number 20240164080
- Publication date May 16, 2024
- Intel Corporation
- Peng ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE MOSFET
- Publication number 20240162292
- Publication date May 16, 2024
- Shanghai Huali Integrated Circuit Corporation
- Wenyin Weng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion Implantation For Nano-FET
- Publication number 20240136228
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND M...
- Publication number 20240105515
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMULATIONS TO SELECTIVELY ETCH SILICON-GERMANIUM RELATIVE TO SILICON
- Publication number 20240096635
- Publication date Mar 21, 2024
- Entegris, Inc.
- Steven M. Bilodeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS
- Publication number 20240088265
- Publication date Mar 14, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...
- Publication number 20240072145
- Publication date Feb 29, 2024
- Intel Corporation
- Megan BECK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SWITCH CIRCUIT, IC STRUCTURE OF POWER SWITCH CIRCUIT, AND MET...
- Publication number 20240056074
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TZUNG-YO HUNG
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MIXED CMOS ARCHITECTURE AND METHOD OF M...
- Publication number 20240055430
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Wei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH C...
- Publication number 20240038889
- Publication date Feb 1, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS

Nanowires or nanotubes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and forming method thereof

Transition metal dichalcogenide nanowires and methods of fabrication

Fabrication methods

Graphene/nanostructure FET with self-aligned contact and gate

Non-planar gate all-around device and method of fabrication thereof

Method of manufacturing semiconductor devices including the steps o...

Method of manufacturing a semiconductor device and a semiconductor...

SAG nanowire growth with ion implantation

Gate all around structure with additional silicon layer and method...

Semiconductor device and method

Integrated circuit device

Semiconductor device

Nanorod production method and nanorod produced thereby

Back end of line nanowire power switch transistors

Manufacturing method of semiconductor device

Integrated circuit structure with front side signal lines and backs...

Semiconductor structure and method for forming same

Method of fabricating vertically oriented planar structures for adv...

Plug and recess process for dual metal gate on stacked nanoribbon d...

Semiconductor structure with isolating feature

Multi-silicide structure for a semiconductor device and a method fo...

Semiconductor device including metal-2 dimensional material-semicon...

Gate patterning process for multi-gate devices

Gate isolation feature and manufacturing method thereof

Leave-behind protective layer having secondary purpose

Carbon nanotube composite, dispersion liquid using same, semiconduc...

Semiconductor device fabrication methods and structures thereof

Fabrication of gate-all-around integrated circuit structures having...

Dual step etch-back inner spacer formation

Semiconductor device and method of fabricating the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD

MULTILAYER MASKING LAYER AND METHOD OF FORMING SAME

Method of Manufacturing Semiconductor Devices Including The Steps o...

THIN FILM TRANSFER USING SUBSTRATE WITH ETCH STOP LAYER AND DIFFUSI...

TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND M...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH ISOLATING FEATURE

INTEGRATED CIRCUIT STRUCTURE WITH FRONT SIDE SIGNAL LINES AND BACKS...

Gate Isolation Feature and Manufacturing Method Thereof

PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...

SEMICONDUCTOR DEVICE FABRICATION METHODS AND STRUCTURES THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

METHODS OF FORMING FINFET DEVICES

ELONGATED CONTACT FOR SOURCE OR DRAIN REGION

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

PHOTOMASK PELLICLE AND METHOD OF FORMING THE SAME

METHOD FOR FABRICATING THREE-DIMENSIONAL MEMORY

CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS

N-TYPE MOSFET

Ion Implantation For Nano-FET

TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND M...

FORMULATIONS TO SELECTIVELY ETCH SILICON-GERMANIUM RELATIVE TO SILICON

EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING...

POWER SWITCH CIRCUIT, IC STRUCTURE OF POWER SWITCH CIRCUIT, AND MET...

SEMICONDUCTOR DEVICE HAVING MIXED CMOS ARCHITECTURE AND METHOD OF M...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH C...