Niobium [Nb] as principal constituent

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H01L2224/05679

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00

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H01L2224/05679Niobium [Nb] as principal constituent

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide device and method for forming a silicon carbide device
- Patent number 11,869,840
- Issue date Jan 9, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor chip, method for producing a power semiconducto...
- Patent number 11,664,335
- Issue date May 30, 2023
- Semikron Elektronik GmbH & Co., KG
- Wolfgang-Michael Schulz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and method for forming a silicon carbide device
- Patent number 11,367,683
- Issue date Jun 21, 2022
- Infineon Technologies AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-destructive testing of integrated circuit chips
- Patent number 10,651,099
- Issue date May 12, 2020
- International Business Machines Corporation
- David W. Abraham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip and power module, and manufacturing method of th...
- Patent number 10,522,638
- Issue date Dec 31, 2019
- Hitachi Power Semiconductor Device, Ltd.
- Masakazu Sagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a layer including niobium, and/or tantalu...
- Patent number 8,836,120
- Issue date Sep 16, 2014
- Infineon Technologies AG
- Khalil Hosseini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for bonding substrates in an energy assisted magnetic record...
- Patent number 8,763,235
- Issue date Jul 1, 2014
- Western Digital (Fremont), LLC
- Lei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
System for performing bonding a first substrate to a second substrate
- Patent number 8,220,140
- Issue date Jul 17, 2012
- Western Digital (Fremont), LLC
- Lei Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Metallization with tailorable coefficient of thermal expansion
- Patent number 8,141,556
- Issue date Mar 27, 2012
- Medtronic, Inc.
- David A. Ruben
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Semiconductor power device with shear stress compensation
- Patent number 6,888,246
- Issue date May 3, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Lei L. Mercado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bond pad of semiconductor device and method of fabricating the same
- Patent number 6,746,951
- Issue date Jun 8, 2004
- Samsung Electronics Co., Ltd.
- Seong-ho Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and method of formation
- Patent number 6,646,347
- Issue date Nov 11, 2003
- Motorola, Inc.
- Lei L. Mercado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making super conducting bonds for thin film devices
- Patent number 5,592,732
- Issue date Jan 14, 1997
- Wisconsin Alumni Research Foundation
- Arthur C. Leuthold
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240324344
- Publication date Sep 26, 2024
- SAMSUNG DISPLAY CO., LTD.
- HYUNEOK SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240243028
- Publication date Jul 18, 2024
- Innolux Corporation
- Ming-Chih Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
- Publication number 20240113026
- Publication date Apr 4, 2024
- INFINEON TECHNOLOGIES AG
- Edward Fürgut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
- Publication number 20220285283
- Publication date Sep 8, 2022
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Chip, Method for Producing a Power Semiconducto...
- Publication number 20190148318
- Publication date May 16, 2019
- SEMIKRON Elektronik GmbH & Co., KG
- Wolfgang-Michael SCHULZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20190088618
- Publication date Mar 21, 2019
- Toshiba Memory Corporation
- Kazumichi TSUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Bonding Wire
- Publication number 20120267784
- Publication date Oct 25, 2012
- INFINEON TECHNOLOGIES AG
- Khalil Hosseini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION WITH TAILORABLE COEFFICIENT OF THERMAL EXPANSION
- Publication number 20080269623
- Publication date Oct 30, 2008
- David A. Ruben
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Semiconductor power device and method of formation
- Publication number 20030232493
- Publication date Dec 18, 2003
- Lei L. Mercado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD OF FORMATION
- Publication number 20030102563
- Publication date Jun 5, 2003
- Lei L. Mercado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bond pad of semiconductor device and method of fabricating the same
- Publication number 20020047218
- Publication date Apr 25, 2002
- SAMSUNG ELECTRONICS CO., LTD.
- Seong-ho Liu
- H01 - BASIC ELECTRIC ELEMENTS

Niobium [Nb] as principal constituent

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide device and method for forming a silicon carbide device

Power semiconductor chip, method for producing a power semiconducto...

Silicon carbide device and method for forming a silicon carbide device

Non-destructive testing of integrated circuit chips

Semiconductor chip and power module, and manufacturing method of th...

Semiconductor device with a layer including niobium, and/or tantalu...

Method for bonding substrates in an energy assisted magnetic record...

System for performing bonding a first substrate to a second substrate

Metallization with tailorable coefficient of thermal expansion

Semiconductor power device with shear stress compensation

Bond pad of semiconductor device and method of fabricating the same

Semiconductor power device and method of formation

Method of making super conducting bonds for thin film devices

Patents Applicationslast 30 patents

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

Power Semiconductor Chip, Method for Producing a Power Semiconducto...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Semiconductor Device and Bonding Wire

METALLIZATION WITH TAILORABLE COEFFICIENT OF THERMAL EXPANSION

Semiconductor power device and method of formation

SEMICONDUCTOR POWER DEVICE AND METHOD OF FORMATION

Bond pad of semiconductor device and method of fabricating the same