Nitrides

Industry

CPC
H01L21/02458

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/02458Nitrides

Industries

Patents Grantslast 30 patents

Information Patent Grant
GaN substrate wafer and method for manufacturing same
- Patent number 12,288,686
- Issue date Apr 29, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for compound semiconductor device
- Patent number 12,283,922
- Issue date Apr 22, 2025
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,279,444
- Issue date Apr 15, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced electronic device structures using semiconductor structure...
- Patent number 12,272,764
- Issue date Apr 8, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device with low threshold voltage
- Patent number 12,272,604
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,272,761
- Issue date Apr 8, 2025
- Azur Space Solar Power GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor including multi-portion nitride region
- Patent number 12,266,698
- Issue date Apr 1, 2025
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate stripping method and epitaxial wafer
- Patent number 12,261,040
- Issue date Mar 25, 2025
- HC Semitek (Zhejiang) Co. Ltd.
- Hongpo Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer film structure and method for producing same
- Patent number 12,247,297
- Issue date Mar 11, 2025
- Tosoh Corporation
- Yuya Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group IIIA nitride growth system and method
- Patent number 12,211,690
- Issue date Jan 28, 2025
- Robbie J. Jorgenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,930
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tse-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of cubic crystalline phase structure on silicon substrates a...
- Patent number 12,183,852
- Issue date Dec 31, 2024
- Steven R. J. Brueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element
- Patent number 12,163,058
- Issue date Dec 10, 2024
- Jae-Wan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride-based semiconductor devices on patterned substrates and...
- Patent number 12,154,864
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,148,713
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element
- Patent number 12,146,076
- Issue date Nov 19, 2024
- Jae-Wan Park
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,142,646
- Issue date Nov 12, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 12,142,639
- Issue date Nov 12, 2024
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor component and process for its production
- Patent number 12,125,938
- Issue date Oct 22, 2024
- Azur Space Solar Power GmbH
- Armin Dadgar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER
- Publication number 20250118552
- Publication date Apr 10, 2025
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- C30 - CRYSTAL GROWTH
Information Patent Application
III-NITRIDE TRANSISTOR WITH TOP AND BOTTOM CAP LAYERS WITH ETCH STOP
- Publication number 20250098274
- Publication date Mar 20, 2025
- Finwave Semiconductor, Inc.
- Dongfei Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE
- Publication number 20250079188
- Publication date Mar 6, 2025
- Texas State University
- Raju Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20250062120
- Publication date Feb 20, 2025
- Kyocera Corporation
- Takehiro NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250063786
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...
- Publication number 20250054754
- Publication date Feb 13, 2025
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20250040208
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...
- Publication number 20250040175
- Publication date Jan 30, 2025
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR D...
- Publication number 20250026962
- Publication date Jan 23, 2025
- SOULBRAIN CO., LTD
- Jae-Wan PARK
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS
- Publication number 20250015143
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY
- Publication number 20240429306
- Publication date Dec 26, 2024
- The Regents of the University of Michigan
- Zetian Mi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...
- Publication number 20240421246
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Saket CHADDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS
- Publication number 20240404824
- Publication date Dec 5, 2024
- AZUR SPACE SOLAR POWER GMBH
- Atsushi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
Ohmic Contact for Semiconductor Structures
- Publication number 20240379360
- Publication date Nov 14, 2024
- Shiva RAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS
- Publication number 20240355619
- Publication date Oct 24, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin James LINTHICUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices Including Gate Barrier Layers
- Publication number 20240355880
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-POWER COMPONENT BASED ON III NITRIDE COMPOUND SEMICONDUCTORS,...
- Publication number 20240347629
- Publication date Oct 17, 2024
- Frauhofer-Gesellschaft zur Forderung Der angewandten Forschung e.V.
- Philipp Döring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240339320
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE AND PREPARING METHOD TH...
- Publication number 20240332371
- Publication date Oct 3, 2024
- Dynax Semiconductor, Inc.
- Hui ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEGMENTED TRANSISTOR ACTIVE REGION FOR ENHANCED THERMAL CONDUCTIVITY
- Publication number 20240332355
- Publication date Oct 3, 2024
- Raytheon Company
- Caroline Reilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240321576
- Publication date Sep 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240322007
- Publication date Sep 26, 2024
- UNITED MICROELECTRONICS CORP.
- Jian-Feng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240313086
- Publication date Sep 19, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE
- Publication number 20240313060
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Miin-Jang Chen
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

GaN substrate wafer and method for manufacturing same

Manufacturing method for compound semiconductor device

Semiconductor device and method for manufacturing the same

Advanced electronic device structures using semiconductor structure...

Integrated circuit device with low threshold voltage

Nitride semiconductor component and process for its production

Nitride semiconductor including multi-portion nitride region

Substrate stripping method and epitaxial wafer

Multilayer film structure and method for producing same

Group IIIA nitride growth system and method

Semiconductor device

Epitaxial oxide materials, structures, and devices

Growth of cubic crystalline phase structure on silicon substrates a...

Preparation method for semiconductor structure

Incorporating semiconductors on a polycrystalline diamond substrate

Nitride semiconductor, semiconductor device, and method for manufac...

Crystal growth method and a substrate for a semiconductor device

Semiconductor element

Optimized heteroepitaxial growth of semiconductors

III-nitride-based semiconductor devices on patterned substrates and...

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Epitaxial oxide materials, structures, and devices

Semiconductor device and method for manufacturing the same

Semiconductor element

Double-channel HEMT device and manufacturing method thereof

Nitride semiconductor, semiconductor device, and method for manufac...

Electronic device with gallium nitride transistors and method of ma...

Nitride semiconductor template, method for manufacturing nitride se...

Method of manufacturing nitride semiconductor light-emitting element

Nitride semiconductor component and process for its production

Patents Applicationslast 30 patents

METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER

III-NITRIDE TRANSISTOR WITH TOP AND BOTTOM CAP LAYERS WITH ETCH STOP

INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE

SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...

COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR D...

NOVEL BUFFER LAYER STRUCTURE TO IMPROVE GAN SEMICONDUCTORS

SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

LIGHT EMITTING DIODE CONTAINING PINHOLE MASKING LAYER AND METHOD OF...

SEMICONDUCTOR WAFER FOR FORMING SEMICONDUCTOR COMPONENTS

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

Ohmic Contact for Semiconductor Structures

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS

Methods of Forming Semiconductor Devices Including Gate Barrier Layers

HIGH-POWER COMPONENT BASED ON III NITRIDE COMPOUND SEMICONDUCTORS,...

CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME

EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE AND PREPARING METHOD TH...

SEGMENTED TRANSISTOR ACTIVE REGION FOR ENHANCED THERMAL CONDUCTIVITY

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE