of anodic oxidation

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H01L21/3167

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/3167of anodic oxidation

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor light emitting device and method for manufacturing same
- Patent number 9,276,379
- Issue date Mar 1, 2016
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Tomoya Satoh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for providing oxide layers
- Patent number 8,822,330
- Issue date Sep 2, 2014
- IMEC
- Philippe Soussan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for electrochemically structuring a conductive or semiconduc...
- Patent number 8,329,017
- Issue date Dec 11, 2012
- Commissariat a l'Energie Atomique
- Denis Buttard
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 8,067,805
- Issue date Nov 29, 2011
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate insulator in group III-V nitride semicondu...
- Patent number 7,977,254
- Issue date Jul 12, 2011
- Tekcore Co., Ltd.
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor-on-insulator by Si:C combined with porous pr...
- Patent number 7,833,884
- Issue date Nov 16, 2010
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 7,816,237
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of semiconductor integrated circuit device
- Patent number 7,759,224
- Issue date Jul 20, 2010
- Renesas Technology Corp.
- Chuichi Miyazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device by forming separatio...
- Patent number 7,696,065
- Issue date Apr 13, 2010
- Canon Kabushiki Kaisha
- Nobuhiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with dielectric stressor element fully underlying the ac...
- Patent number 7,659,581
- Issue date Feb 9, 2010
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anodic oxidation apparatus
- Patent number 7,569,124
- Issue date Aug 4, 2009
- Tokyo Electron Limited and Matsushita Electric Works, Ltd.
- Yasushi Yagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling at nanometric scale the growth of thin films...
- Patent number 7,498,060
- Issue date Mar 3, 2009
- Fabio Biscarini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of semiconductor integrated circuit device
- Patent number 7,452,787
- Issue date Nov 18, 2008
- Renesas Technology Corp.
- Chuichi Miyazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra shallow junction formation by epitaxial interface limited dif...
- Patent number 7,402,870
- Issue date Jul 22, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet chemical treatment to form a thin oxide for high k gate dielect...
- Patent number 7,358,196
- Issue date Apr 15, 2008
- Applied Materials, Inc.
- Steven Verhaverbeke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating nitrogen-containing gate dielectric layer and...
- Patent number 7,312,139
- Issue date Dec 25, 2007
- United Microelectronics Corp.
- Yu-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma method with high input power
- Patent number 7,312,415
- Issue date Dec 25, 2007
- Foundation for Advancement of International Science
- Tadahiro Ohmi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a gate insulator in group III-V nitride semicondu...
- Patent number 7,253,061
- Issue date Aug 7, 2007
- Tekcore Co., Ltd.
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled growth of highly uniform, oxide layers, especially ultra...
- Patent number 7,235,495
- Issue date Jun 26, 2007
- FSI International, Inc.
- Thomas J. Wagener
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having dielectric stressor elements for applying in-plan...
- Patent number 7,221,024
- Issue date May 22, 2007
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and configuration for reinforcement of a dielectric layer at...
- Patent number 7,176,514
- Issue date Feb 13, 2007
- Infineon Technologies AG
- Thomas Hecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 7,135,417
- Issue date Nov 14, 2006
- Micron Technology, Inc.
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus with improved layers of group III-nitride semiconductor
- Patent number 7,038,300
- Issue date May 2, 2006
- Lucent Technologies Inc.
- Julia Wang-Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layers of group III-nitride semiconductor made by processes with mu...
- Patent number 7,001,813
- Issue date Feb 21, 2006
- Lucent Technologies Inc.
- Michael James Manfra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film semiconductor device and method of manufacturing the same
- Patent number 6,972,215
- Issue date Dec 6, 2005
- Canon Kabushiki Kaisha
- Kiyofumi Sakaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing substrate
- Patent number 6,917,096
- Issue date Jul 12, 2005
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET having enhanced breakdown voltage
- Patent number 6,853,033
- Issue date Feb 8, 2005
- National University of Singapore
- Yung Chii Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for electrochemical oxidation
- Patent number 6,815,315
- Issue date Nov 9, 2004
- Matsushita Electric Works, Ltd.
- Yoshifumi Watabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming low thermal budget sacrificial oxides
- Patent number 6,764,967
- Issue date Jul 20, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd
- Vincent Pai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a high-K gate dielectric and method of...
- Patent number 6,723,581
- Issue date Apr 20, 2004
- Agere Systems Inc.
- Yves Jean Chabal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of forming a gate insulator in group III-V nitride semicondu...
- Publication number 20110124203
- Publication date May 26, 2011
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROVIDING OXIDE LAYERS
- Publication number 20110086507
- Publication date Apr 14, 2011
- IMEC
- Philippe Soussan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ELECTROCHEMICALLY STRUCTURING A CONDUCTIVE OR SEMICONDUC...
- Publication number 20090255820
- Publication date Oct 15, 2009
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Denis Buttard
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
STRAINED SEMICONDUCTOR-ON-INSULATOR BY Si:C COMBINED WITH POROUS PR...
- Publication number 20090117720
- Publication date May 7, 2009
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication Method of Semiconductor Integrated Circuit Device
- Publication number 20080286948
- Publication date Nov 20, 2008
- Chuichi Miyazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...
- Publication number 20080233687
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...
- Publication number 20080230840
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING OXIDE FILM AND METHOD OF MANUFACTURING SEMI...
- Publication number 20080214019
- Publication date Sep 4, 2008
- Kabushiki Kaisha Toshiba
- Hiroshi Katsumata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wet chemical treatment to form a thin oxide for high k gate dielect...
- Publication number 20080087970
- Publication date Apr 17, 2008
- Steven Verhaverbeke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanoscale control of the spatial distribution, shape and size of th...
- Publication number 20070234947
- Publication date Oct 11, 2007
- Fabio Biscarini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled growth of highly uniform, oxide layers, especially ultra...
- Publication number 20070218668
- Publication date Sep 20, 2007
- Thomas J. Wagener
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH DIELECTRIC STRESSOR ELEMENT FULLY UNDERLYING THE AC...
- Publication number 20070122956
- Publication date May 31, 2007
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING DIELECTRIC STRESSOR ELEMENTS FOR APPLYING IN-PLAN...
- Publication number 20070096223
- Publication date May 3, 2007
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20070087506
- Publication date Apr 19, 2007
- Micron Technology, Inc.
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20070087505
- Publication date Apr 19, 2007
- Micron Technology, Inc.
- Randhir P. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wet chemical treatment to form a thin oxide for high k gate dielect...
- Publication number 20060178015
- Publication date Aug 10, 2006
- Steven Verhaverbeke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating nitrogen-containing gate dielectric layer and...
- Publication number 20060148179
- Publication date Jul 6, 2006
- Yu-Ren Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making a silicon dioxide layer on a silicon substrate by...
- Publication number 20060141751
- Publication date Jun 29, 2006
- HON HAI Precision Industry CO., LTD.
- Wei-Jian Liao
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Method for forming ultra thin oxide layer by ozonated water
- Publication number 20060134927
- Publication date Jun 22, 2006
- INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Yung-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a gate insulator in group III-V nitride semicondu...
- Publication number 20060121700
- Publication date Jun 8, 2006
- Tekcore Co., Ltd.
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...
- Publication number 20060076627
- Publication date Apr 13, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing oxide film and method of manufacturing semi...
- Publication number 20060068605
- Publication date Mar 30, 2006
- Kabushiki Kaisha Toshiba
- Hiroshi Katsumata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060049487
- Publication date Mar 9, 2006
- Nobuhiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma device
- Publication number 20050250338
- Publication date Nov 10, 2005
- Tadahiro OHMI
- Tadahiro Ohmi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Fabrication method of semiconductor integrated circuit device
- Publication number 20050142815
- Publication date Jun 30, 2005
- Chuichi Miyazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an oxide layer using a mixture of a supercritical...
- Publication number 20050130449
- Publication date Jun 16, 2005
- Ping Chuang
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Method and apparatus for electrochemical processing
- Publication number 20050126920
- Publication date Jun 16, 2005
- GE ENERGY (USA) LLC
- Oleg V. Sulima
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Supercritical water application for oxide formation
- Publication number 20050106895
- Publication date May 19, 2005
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Liang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Anodic oxidation apparatus, anodic oxidation method, and panel for...
- Publication number 20050077183
- Publication date Apr 14, 2005
- Yasushi Yagi
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Controlled growth of highly uniform, oxide layers, especially ultra...
- Publication number 20050048800
- Publication date Mar 3, 2005
- Thomas J. Wagener
- H01 - BASIC ELECTRIC ELEMENTS

of anodic oxidation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor light emitting device and method for manufacturing same

Method for providing oxide layers

Method for electrochemically structuring a conductive or semiconduc...

Ultra shallow junction formation by epitaxial interface limited dif...

Method of forming a gate insulator in group III-V nitride semicondu...

Strained semiconductor-on-insulator by Si:C combined with porous pr...

Ultra shallow junction formation by epitaxial interface limited dif...

Fabrication method of semiconductor integrated circuit device

Method of manufacturing a semiconductor device by forming separatio...

Transistor with dielectric stressor element fully underlying the ac...

Anodic oxidation apparatus

Method for controlling at nanometric scale the growth of thin films...

Fabrication method of semiconductor integrated circuit device

Ultra shallow junction formation by epitaxial interface limited dif...

Wet chemical treatment to form a thin oxide for high k gate dielect...

Method of fabricating nitrogen-containing gate dielectric layer and...

Plasma method with high input power

Method of forming a gate insulator in group III-V nitride semicondu...

Controlled growth of highly uniform, oxide layers, especially ultra...

Transistor having dielectric stressor elements for applying in-plan...

Method and configuration for reinforcement of a dielectric layer at...

Method of forming a semiconductor device

Apparatus with improved layers of group III-nitride semiconductor

Layers of group III-nitride semiconductor made by processes with mu...

Thin-film semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing substrate

Power MOSFET having enhanced breakdown voltage

Method for electrochemical oxidation

Method for forming low thermal budget sacrificial oxides

Semiconductor device having a high-K gate dielectric and method of...

Patents Applicationslast 30 patents

Method of forming a gate insulator in group III-V nitride semicondu...

METHOD FOR PROVIDING OXIDE LAYERS

METHOD FOR ELECTROCHEMICALLY STRUCTURING A CONDUCTIVE OR SEMICONDUC...

STRAINED SEMICONDUCTOR-ON-INSULATOR BY Si:C COMBINED WITH POROUS PR...

Fabrication Method of Semiconductor Integrated Circuit Device

ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...

ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...

METHOD OF MANUFACTURING OXIDE FILM AND METHOD OF MANUFACTURING SEMI...

Wet chemical treatment to form a thin oxide for high k gate dielect...

Nanoscale control of the spatial distribution, shape and size of th...

Controlled growth of highly uniform, oxide layers, especially ultra...

TRANSISTOR WITH DIELECTRIC STRESSOR ELEMENT FULLY UNDERLYING THE AC...

TRANSISTOR HAVING DIELECTRIC STRESSOR ELEMENTS FOR APPLYING IN-PLAN...

METHOD OF FORMING A SEMICONDUCTOR DEVICE

METHOD OF FORMING A SEMICONDUCTOR DEVICE

Wet chemical treatment to form a thin oxide for high k gate dielect...

Method of fabricating nitrogen-containing gate dielectric layer and...

Method for making a silicon dioxide layer on a silicon substrate by...

Method for forming ultra thin oxide layer by ozonated water

Method of forming a gate insulator in group III-V nitride semicondu...

ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIF...

Method of manufacturing oxide film and method of manufacturing semi...

Semiconductor device and method of manufacturing the same

Plasma device

Fabrication method of semiconductor integrated circuit device

Method of forming an oxide layer using a mixture of a supercritical...

Method and apparatus for electrochemical processing

Supercritical water application for oxide formation

Anodic oxidation apparatus, anodic oxidation method, and panel for...

Controlled growth of highly uniform, oxide layers, especially ultra...