of devices having a semiconductor body comprising crystalline silicon carbide

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H01L29/66053

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66053of devices having a semiconductor body comprising crystalline silicon carbide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Solid body and multi-component arrangement
- Patent number 12,211,702
- Issue date Jan 28, 2025
- Siltectra GmbH
- Wolfram Drescher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 12,205,983
- Issue date Jan 21, 2025
- Denso Corporation
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device having a ferroelectric g...
- Patent number 12,107,128
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,080,762
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Naoyuki Ohse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
On-chip integrated silicon carbide pressure and temperature sensors
- Patent number 12,044,585
- Issue date Jul 23, 2024
- United States Government Administrator of NASA
- Robert S. Okojie
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Manufacturing method of an element of an electronic device having i...
- Patent number 11,869,771
- Issue date Jan 9, 2024
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a ferroelectric gate stack
- Patent number 11,791,383
- Issue date Oct 17, 2023
- Infineon Technologies AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of re-using a silicon carbide substrate
- Patent number 11,735,642
- Issue date Aug 22, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor apparatus manufactured with a plurality of substra...
- Patent number 11,610,993
- Issue date Mar 21, 2023
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate
- Patent number 11,373,868
- Issue date Jun 28, 2022
- Sumitomo Electric Industries, Ltd.
- Hironori Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, semiconductor device, and power converter
- Patent number 11,233,126
- Issue date Jan 25, 2022
- Mitsubishi Electric Corporation
- Masashi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming semiconductor devices in silicon carbide
- Patent number 11,031,483
- Issue date Jun 8, 2021
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thinning solid body layers provided with components
- Patent number 10,978,311
- Issue date Apr 13, 2021
- Siltectra GmbH
- Wolfram Drescher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing semiconductor wafers using a grinding wheel
- Patent number 10,974,365
- Issue date Apr 13, 2021
- Infineon Technologies AG
- Rudolf Lehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and manufacturing method of the same
- Patent number 10,964,785
- Issue date Mar 30, 2021
- Mitsubishi Electric Corporation
- Yoichiro Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate insulating layer having a plurality of silicon oxide layer wit...
- Patent number 10,892,332
- Issue date Jan 12, 2021
- Kabushiki Kaisha Toshiba
- Shigeto Fukatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, inverter circuit, driving device, vehicle, an...
- Patent number 10,770,549
- Issue date Sep 8, 2020
- Kabushiki Kaisha Toshiba
- Toshiyuki Oshima
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method for forming semiconductor devices
- Patent number 10,710,210
- Issue date Jul 14, 2020
- Infineon Technologies AG
- Rudolf Lehner
- B24 - GRINDING POLISHING
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,651,277
- Issue date May 12, 2020
- Renesas Electronics Corporation
- Yuya Abiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,453,687
- Issue date Oct 22, 2019
- Fuji Electric Co., Ltd.
- Kenichi Iguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide single crystal substrate, silicon carbide semicondu...
- Patent number 9,978,651
- Issue date May 22, 2018
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- B24 - GRINDING POLISHING
Information Patent Grant
Manufacturing method of a graphene-based electrochemical sensor, an...
- Patent number 9,797,860
- Issue date Oct 24, 2017
- STMicroelectronics S.r.l.
- Corrado Accardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 9,716,159
- Issue date Jul 25, 2017
- Fuji Electric Co., Ltd.
- Manabu Takei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 9,613,809
- Issue date Apr 4, 2017
- Sumitomo Electric Industries, Ltd
- Taku Horii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide bipolar junction transistor including shielding reg...
- Patent number 9,515,176
- Issue date Dec 6, 2016
- Fairchild Semiconductor Corporation
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a graphene-based electrochemical sensor, an...
- Patent number 9,476,852
- Issue date Oct 25, 2016
- STMicroelectronics S.r.l.
- Corrado Accardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered source/drain region for n-Type MOSFET
- Patent number 9,356,136
- Issue date May 31, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a graphene-based electrochemical sensor, an...
- Patent number 9,324,825
- Issue date Apr 26, 2016
- STMicroelectronics S.r.l.
- Corrado Accardi
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 9,263,347
- Issue date Feb 16, 2016
- Sumitomo Electric Industries, Ltd
- Hideto Tamaso
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING...
- Publication number 20240203737
- Publication date Jun 20, 2024
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC G...
- Publication number 20230411460
- Publication date Dec 21, 2023
- INFINEON TECNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...
- Publication number 20230361196
- Publication date Nov 9, 2023
- Infineon Techmologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230299151
- Publication date Sep 21, 2023
- Kabushiki Kaisha Toshiba
- Makoto MIZUKAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Breakdown Voltage, Low RDSON Electrical Component with Dissimi...
- Publication number 20230067511
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC GATE STACK
- Publication number 20230035144
- Publication date Feb 2, 2023
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20220399442
- Publication date Dec 15, 2022
- PAUL SCHERRER INSTITUT
- Massimo Camarda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, IN...
- Publication number 20220302261
- Publication date Sep 22, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20220262905
- Publication date Aug 18, 2022
- Fuji Electric Co., Ltd.
- Naoyuki OHSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
- Publication number 20220102502
- Publication date Mar 31, 2022
- Rohm Co., Ltd.
- Shingo OTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20220102485
- Publication date Mar 31, 2022
- DENSO CORPORATION
- Hidefumi TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING I...
- Publication number 20220076955
- Publication date Mar 10, 2022
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20220044934
- Publication date Feb 10, 2022
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Re-using a Silicon Carbide Substrate
- Publication number 20210265484
- Publication date Aug 26, 2021
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solid Body and Multi-Component Arrangement
- Publication number 20210225659
- Publication date Jul 22, 2021
- Wolfram Drescher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR APPARATUS MANUFACTURED WITH A PLURALITY OF SUBSTRA...
- Publication number 20210175358
- Publication date Jun 10, 2021
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Processing Semiconductor Wafers Using a Grinding Wheel
- Publication number 20200298369
- Publication date Sep 24, 2020
- Rudolf Lehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF THE SAME
- Publication number 20200066847
- Publication date Feb 27, 2020
- Mitsubishi Electric Corporation
- Yoichiro MITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Thinning Solid Body Layers Provided with Components
- Publication number 20200066542
- Publication date Feb 27, 2020
- SILTECTRA GMBH
- Wolfram Drescher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE, AN...
- Publication number 20200035791
- Publication date Jan 30, 2020
- KABUSHIKI KAISHA TOSHIBA
- Toshiyuki OSHIMA
- B66 - HOISTING LIFTING HAULING
Information Patent Application
Semiconductor Device and Manufacturing
- Publication number 20190333765
- Publication date Oct 31, 2019
- Markus Kahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190207001
- Publication date Jul 4, 2019
- RENESAS ELECTRONICS CORPORATION
- Yuya ABIKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190019679
- Publication date Jan 17, 2019
- Fuji Electric Co., Ltd.
- Kenichi IGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180286952
- Publication date Oct 4, 2018
- RENESAS ELECTRONICS CORPORATION
- Yuya ABIKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150303119
- Publication date Oct 22, 2015
- Sumitomo Electric Industries, Ltd.
- Hideto Tamaso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Buried Junction Devices in Silicon Carbide Using...
- Publication number 20150028351
- Publication date Jan 29, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Band Gap Semiconductor Wafers Grown and processed in a Microgr...
- Publication number 20140353682
- Publication date Dec 4, 2014
- MASTERSON INDUSTRIES, LLC
- William F. Seng
- C30 - CRYSTAL GROWTH
Information Patent Application
Engineered Source/Drain Region for N-Type MOSFET
- Publication number 20140252468
- Publication date Sep 11, 2014
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER SURGE DIODES
- Publication number 20140138705
- Publication date May 22, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A GRAPHENE-BASED ELECTROCHEMICAL SENSOR, AN...
- Publication number 20130334579
- Publication date Dec 19, 2013
- Corrado Accardi
- G01 - MEASURING TESTING

of devices having a semiconductor body comprising crystalline silicon carbide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Solid body and multi-component arrangement

Semiconductor device and manufacturing method of semiconductor device

Method of producing a semiconductor device having a ferroelectric g...

Silicon carbide semiconductor device and method of manufacturing si...

SiC composite substrate including biaxially oreinted SiC layer and...

On-chip integrated silicon carbide pressure and temperature sensors

Manufacturing method of an element of an electronic device having i...

Semiconductor device having a ferroelectric gate stack

Methods of re-using a silicon carbide substrate

3D semiconductor apparatus manufactured with a plurality of substra...

Method for manufacturing silicon carbide epitaxial substrate

SiC epitaxial wafer, semiconductor device, and power converter

Forming semiconductor devices in silicon carbide

Method for thinning solid body layers provided with components

Method for processing semiconductor wafers using a grinding wheel

SiC epitaxial wafer and manufacturing method of the same

Gate insulating layer having a plurality of silicon oxide layer wit...

Semiconductor device, inverter circuit, driving device, vehicle, an...

Method for forming semiconductor devices

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device

Silicon carbide single crystal substrate, silicon carbide semicondu...

Manufacturing method of a graphene-based electrochemical sensor, an...

Method of manufacturing silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device

Silicon carbide bipolar junction transistor including shielding reg...

Manufacturing method of a graphene-based electrochemical sensor, an...

Engineered source/drain region for n-Type MOSFET

Manufacturing method of a graphene-based electrochemical sensor, an...

Method of manufacturing silicon carbide semiconductor device

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING...

METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC G...

Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

High-Breakdown Voltage, Low RDSON Electrical Component with Dissimi...

SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC GATE STACK

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, IN...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SiC SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING I...

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

Methods of Re-using a Silicon Carbide Substrate

Solid Body and Multi-Component Arrangement

3D SEMICONDUCTOR APPARATUS MANUFACTURED WITH A PLURALITY OF SUBSTRA...

Method for Processing Semiconductor Wafers Using a Grinding Wheel

SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF THE SAME

Method for Thinning Solid Body Layers Provided with Components

SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE, AN...

Semiconductor Device and Manufacturing

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Methods of Forming Buried Junction Devices in Silicon Carbide Using...

Wide Band Gap Semiconductor Wafers Grown and processed in a Microgr...

Engineered Source/Drain Region for N-Type MOSFET

SUPER SURGE DIODES

MANUFACTURING METHOD OF A GRAPHENE-BASED ELECTROCHEMICAL SENSOR, AN...