of electrically active species

Industry

CPC
H01L21/26546

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/26546of electrically active species

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium Nitride high-electron mobility transistors with p-type laye...
- Patent number 12,142,674
- Issue date Nov 12, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coupled guard rings for edge termination
- Patent number 12,136,645
- Issue date Nov 5, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,125,903
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system of junction termination extension in high voltage...
- Patent number 12,113,101
- Issue date Oct 8, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Subhash Srinivas Pidaparthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,087,762
- Issue date Sep 10, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing high electron mobility transistors having...
- Patent number 12,015,075
- Issue date Jun 18, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET having a high resistance region
- Patent number 12,009,390
- Issue date Jun 11, 2024
- Fuji Electric Co., Ltd.
- Katsunori Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating a semiconductor device
- Patent number 11,869,963
- Issue date Jan 9, 2024
- Infineon Technologies AG
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,854,909
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,817,318
- Issue date Nov 14, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 11,804,544
- Issue date Oct 31, 2023
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped seed layer and method of manufact...
- Patent number 11,721,752
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,621,321
- Issue date Apr 4, 2023
- Mitsubishi Electric Corporation
- Kazuya Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor device
- Patent number 11,610,779
- Issue date Mar 21, 2023
- Toyoda Gosei Co., Ltd.
- Kota Yasunishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective thermal annealing method
- Patent number 11,581,418
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,532,478
- Issue date Dec 20, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high-electron mobility transistors with p-type laye...
- Patent number 11,430,882
- Issue date Aug 30, 2022
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,430,702
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implants to enlarge Schottky diode cross-sectional area for lateral...
- Patent number 11,404,407
- Issue date Aug 2, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 11,362,174
- Issue date Jun 14, 2022
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implanted substrate contact for in-process charging control
- Patent number 11,362,082
- Issue date Jun 14, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,362,214
- Issue date Jun 14, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Nan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating a semiconductor device
- Patent number 11,342,451
- Issue date May 24, 2022
- Infineon Technologies AG
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped seed layer and method of manufact...
- Patent number 11,329,148
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing thin film transistor and thin film transistor
- Patent number 11,309,401
- Issue date Apr 19, 2022
- WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Tianyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 11,264,492
- Issue date Mar 1, 2022
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride based semiconductor device and manufacturing method...
- Patent number 11,257,676
- Issue date Feb 22, 2022
- Fuji Electric Co., Ltd.
- Hideaki Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode semiconductor devices including current dependent re...
- Patent number 11,244,831
- Issue date Feb 8, 2022
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN devices with ion implanted ohmic contacts and method of fabrica...
- Patent number 11,201,058
- Issue date Dec 14, 2021
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPLED GUARD RINGS FOR EDGE TERMINATION
- Publication number 20250031416
- Publication date Jan 23, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford DROWLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTATION METHOD
- Publication number 20250014903
- Publication date Jan 9, 2025
- Fraunhofer Gesellschaft zur Forderung der angewandten Forschung e.V.
- Christian Giese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015173
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20250006798
- Publication date Jan 2, 2025
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...
- Publication number 20250006784
- Publication date Jan 2, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Subhash Srinivas PIDAPARTHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240313089
- Publication date Sep 19, 2024
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY
- Publication number 20240204055
- Publication date Jun 20, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing Method of Forming Semiconductor Device and Semiconduc...
- Publication number 20240145551
- Publication date May 2, 2024
- PANJIT INTERNATIONAL INC.
- Hung Shen Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240097000
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT WITH SHIELDING
- Publication number 20240096935
- Publication date Mar 21, 2024
- ROBERT BOSCH GmbH
- Christian Huber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPED SEED LAYER AND METHOD OF MANUFACT...
- Publication number 20240021719
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRENCH MOSFET AND FABRICATION METHOD
- Publication number 20240021724
- Publication date Jan 18, 2024
- Sixpoint Materials, Inc.
- TADAO HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230352557
- Publication date Nov 2, 2023
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ohmic contact of GaN-based electronic device, an...
- Publication number 20230282480
- Publication date Sep 7, 2023
- Korea Atomic Energy Research Institute
- Dong Seok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230215912
- Publication date Jul 6, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ziming DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20230207323
- Publication date Jun 29, 2023
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WBG and UWBG Semiconductor with P- and N-type Conductivity and Proc...
- Publication number 20230197454
- Publication date Jun 22, 2023
- The Government of the United States of America, as represented by the Secreta...
- Boris N. Feigelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Laser Annealing Method
- Publication number 20230155000
- Publication date May 18, 2023
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20230081981
- Publication date Mar 16, 2023
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20220359295
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYE...
- Publication number 20220344500
- Publication date Oct 27, 2022
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE S...
- Publication number 20220285504
- Publication date Sep 8, 2022
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE S...
- Publication number 20220285503
- Publication date Sep 8, 2022
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...
- Publication number 20220254639
- Publication date Aug 11, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-CLOSED DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220254911
- Publication date Aug 11, 2022
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Fabricating a Semiconductor Device
- Publication number 20220254913
- Publication date Aug 11, 2022
- INFINEON TECHNOLOGIES AG
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPLED GUARD RINGS FOR EDGE TERMINATION
- Publication number 20220238643
- Publication date Jul 28, 2022
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS

of electrically active species

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gallium nitride transistor with a doped region

Gallium Nitride high-electron mobility transistors with p-type laye...

Coupled guard rings for edge termination

High electron mobility transistor and method for fabricating the same

Method and system of junction termination extension in high voltage...

Nitride semiconductor device

Methods of manufacturing high electron mobility transistors having...

Vertical MOSFET having a high resistance region

Semiconductor device and method of fabricating a semiconductor device

Semiconductor structure and method for manufacturing thereof

GaN devices with ion implanted ohmic contacts and method of fabrica...

High electron mobility transistor and method for fabricating the same

Semiconductor device having doped seed layer and method of manufact...

Semiconductor device

Method for producing semiconductor device

Selective thermal annealing method

GaN devices with ion implanted ohmic contacts and method of fabrica...

Gallium nitride high-electron mobility transistors with p-type laye...

Semiconductor structure and method for manufacturing thereof

Implants to enlarge Schottky diode cross-sectional area for lateral...

Method of manufacturing semiconductor device and semiconductor device

Implanted substrate contact for in-process charging control

Semiconductor device and fabrication method thereof

Semiconductor device and method of fabricating a semiconductor device

Semiconductor device having doped seed layer and method of manufact...

Method for manufacturing thin film transistor and thin film transistor

High electron mobility transistor and method for fabricating the same

Gallium nitride based semiconductor device and manufacturing method...

Depletion mode semiconductor devices including current dependent re...

GaN devices with ion implanted ohmic contacts and method of fabrica...

Patents Applicationslast 30 patents

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

COUPLED GUARD RINGS FOR EDGE TERMINATION

IMPLANTATION METHOD

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY

Manufacturing Method of Forming Semiconductor Device and Semiconduc...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR ELEMENT WITH SHIELDING

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE HAVING DOPED SEED LAYER AND METHOD OF MANUFACT...

GaN TRENCH MOSFET AND FABRICATION METHOD

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Method for forming ohmic contact of GaN-based electronic device, an...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

WBG and UWBG Semiconductor with P- and N-type Conductivity and Proc...

Selective Laser Annealing Method

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYE...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE S...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE S...

GaN Devices With Ion Implanted Ohmic Contacts and Method of Fabrica...

NORMALLY-CLOSED DEVICE AND FABRICATION METHOD THEREOF

Semiconductor Device and Method of Fabricating a Semiconductor Device

COUPLED GUARD RINGS FOR EDGE TERMINATION