of field-effect transistors with Schottky gate

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0891of field-effect transistors with Schottky gate

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Patents Grantslast 30 patents

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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
Gallium nitride transistor with a doped region
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Process of forming nitride semiconductor device
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- Issue date Oct 12, 2021
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
Layered structure, semiconductor device including layered structure...
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Information Patent Grant
Field-effect transistor having a bypass electrode connected to the...
- Patent number 10,672,876
- Issue date Jun 2, 2020
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- Masashi Tanimoto
- H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor devices with raised doped crystalline structures
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Method for forming trench semiconductor device having Schottky barr...
- Patent number 10,593,760
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Field effect transistor (FET) structure with integrated gate connec...
- Patent number 10,593,665
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- Raytheon Company
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Semiconductor device and method of manufacturing semiconductor device
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Field effect transistor and process of forming the same
- Patent number 10,580,887
- Issue date Mar 3, 2020
- Sumitomo Electric Industries, Ltd.
- Ken Nakata
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Information Patent Grant
Low voltage (power) junction FET with all-around junction gate
- Patent number 10,573,648
- Issue date Feb 25, 2020
- International Business Machines Corporation
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Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/...
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- Issue date Nov 26, 2019
- University of Florida Research Foundation, Incorporated
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Semiconductor device, related manufacturing method, and related ele...
- Patent number 10,431,588
- Issue date Oct 1, 2019
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Semiconductor devices with regrown contacts and methods of fabrication
- Patent number 10,403,718
- Issue date Sep 3, 2019
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with regrown contacts and methods of fabrication
- Patent number 10,355,085
- Issue date Jul 16, 2019
- NXP USA, INC.
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- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

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ENHANCEMENT MODE TRANSISTOR WITH A ROBUST GATE AND METHOD
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...
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- TEXAS INSTRUMENTS INCORPORATED
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FIELD EFFECT TRANSISTOR DEVICE
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GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
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RADIO FREQUENCY TRANSISTOR AMPLIFIERS HAVING SELF-ALIGNED DOUBLE IM...
- Publication number 20230261054
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- Wolfspeed, Inc.
- Kyle Bothe
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230238447
- Publication date Jul 27, 2023
- Sumitomo Electric Industries, Ltd.
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SEMICONDUCTOR DEVICE
- Publication number 20230187500
- Publication date Jun 15, 2023
- Kabushiki Kaisha Toshiba
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FIELD EFFECT TRANSISTOR
- Publication number 20230080772
- Publication date Mar 16, 2023
- WALTER TONY WOHLMUTH
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III-NITRIDE TRANSISTOR WITH ELECTRICALLY CONNECTED P-TYPE LAYER IN...
- Publication number 20230043810
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- Finwave Semiconductor, Inc.
- Dongfei Pei
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FIELD EFFECT TRANSISTORS WITH MODIFIED ACCESS REGIONS
- Publication number 20220376106
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- Wolfspeed, Inc.
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FIELD EFFECT TRANSISTOR AND PROCESS OF FORMING THE SAME
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- Sumitomo Electric Industries, Ltd.
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- Publication number 20200119177
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- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
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METHOD FOR FORMING TRENCH SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARR...
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- Michael THOMASON
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LOW VOLTAGE (POWER) JUNCTION FET WITH ALL-AROUND JUNCTION GATE
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- International Business Machines Corporation
- Karthik Balakrishnan
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SURFACE MESFET
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- Publication date Sep 19, 2019
- EMBERION OY
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SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION
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- Publication number 20190189746
- Publication date Jun 20, 2019
- Fujitsu Limited
- Kozo Makiyama
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- Publication number 20190165130
- Publication date May 30, 2019
- Sumitomo Electric Industries, Ltd.
- Tomohiro YOSHIDA
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SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES
- Publication number 20190148533
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- Intel Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
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Passivation Structure For GaN Field Effect Transistor
- Publication number 20190148498
- Publication date May 16, 2019
- WIN Semiconductors Corp.
- Eric LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND PROCESS OF FORMING THE SAME
- Publication number 20190097034
- Publication date Mar 28, 2019
- Sumitomo Electric Industries, Ltd.
- Ken Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW VOLTAGE (POWER) JUNCTION FET WITH ALL-AROUND JUNCTION GATE
- Publication number 20190035787
- Publication date Jan 31, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) STRUCTURE WITH INTEGRATED GATE CONNEC...
- Publication number 20190019790
- Publication date Jan 17, 2019
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS

of field-effect transistors with Schottky gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Radio frequency transistor amplifiers having self-aligned double im...

Gallium nitride transistor with a doped region

High voltage field effect transistor with vertical current paths an...

Field effect transistor

Field effect transistors with modified access regions

Gallium nitride transistor with a doped region

Surface MESFET

Power MOSFET and JBSFET cell topologies with superior high frequenc...

Process of forming nitride semiconductor device

Logic gate cell structure

Enhancement-mode device and method for manufacturing the same

Gallium nitride transistor with a doped region

Field effect transistor and process of forming the same

Layered structure, semiconductor device including layered structure...

Compound semiconductor device and method with high concentration do...

Low voltage (power) junction FET with all-around junction gate

Semiconductor devices with via structure and package structures com...

Method of making a dual-gate HEMT

Semiconductor device

Field-effect transistor having a bypass electrode connected to the...

Semiconductor devices with raised doped crystalline structures

Method for forming trench semiconductor device having Schottky barr...

Field effect transistor (FET) structure with integrated gate connec...

Semiconductor device and method of manufacturing semiconductor device

Field effect transistor and process of forming the same

Low voltage (power) junction FET with all-around junction gate

Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/...

Semiconductor device, related manufacturing method, and related ele...

Semiconductor devices with regrown contacts and methods of fabrication

Semiconductor devices with regrown contacts and methods of fabrication

Patents Applicationslast 30 patents

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DECIVE AND PRODUCTION METHOD THEREFOR

ENHANCEMENT MODE TRANSISTOR WITH A ROBUST GATE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...

FIELD EFFECT TRANSISTOR DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

RADIO FREQUENCY TRANSISTOR AMPLIFIERS HAVING SELF-ALIGNED DOUBLE IM...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR

III-NITRIDE TRANSISTOR WITH ELECTRICALLY CONNECTED P-TYPE LAYER IN...

FIELD EFFECT TRANSISTORS WITH MODIFIED ACCESS REGIONS

FIELD EFFECT TRANSISTOR AND PROCESS OF FORMING THE SAME

Enhancement-mode Device and Method for Manufacturing the Same

METHOD FOR FORMING TRENCH SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARR...

METHOD FOR FORMING TRENCH SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARR...

LOW VOLTAGE (POWER) JUNCTION FET WITH ALL-AROUND JUNCTION GATE

SURFACE MESFET

SEMICONDUCTOR DEVICES WITH REGROWN CONTACTS AND METHODS OF FABRICATION

SEMICONDUCTOR DEVICE

COMPOUND SEMICONDUCTOR DEVICE AND METHOD

PROCESS OF FORMING NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES

Passivation Structure For GaN Field Effect Transistor

FIELD EFFECT TRANSISTOR AND PROCESS OF FORMING THE SAME

LOW VOLTAGE (POWER) JUNCTION FET WITH ALL-AROUND JUNCTION GATE

FIELD EFFECT TRANSISTOR (FET) STRUCTURE WITH INTEGRATED GATE CONNEC...