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H01L29/1075

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/1075of field-effect transistors

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device incorporating a substrate recess
- Patent number 12,218,202
- Issue date Feb 4, 2025
- Wolfspeed, Inc.
- Evan Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,148,713
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, electronic device, method of performing inspec...
- Patent number 12,112,945
- Issue date Oct 8, 2024
- Sumitomo Chemical Company, Limited
- Noboru Fukuhara
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device having a plurality of III-V semiconductor layers
- Patent number 12,087,820
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device, compound semiconductor substrate, an...
- Patent number 12,087,852
- Issue date Sep 10, 2024
- Air Water Inc.
- Shigeomi Hishiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,002,857
- Issue date Jun 4, 2024
- Vanguard International Semiconductor Corporation
- Shin-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods related to switch body connections to achieve soft breakdown
- Patent number 11,973,115
- Issue date Apr 30, 2024
- Skyworks Solutions, Inc.
- Ambarish Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a timing circuit arrangements for flip-flops
- Patent number 11,942,945
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huaixin Xian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,422
- Issue date Mar 5, 2024
- GlobalWafers Co., Ltd.
- Ming-Shien Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride high-electron mobility transistors with buried p-...
- Patent number 11,862,719
- Issue date Jan 2, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,777,023
- Issue date Oct 3, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Weixing Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 11,705,486
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch body connections to achieve soft breakdown
- Patent number 11,682,699
- Issue date Jun 20, 2023
- Skyworks Solutions, Inc.
- Ambarish Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,631,741
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor structure including the substr...
- Patent number 11,552,171
- Issue date Jan 10, 2023
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,476,325
- Issue date Oct 18, 2022
- Jin Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown resistant HEMT substrate and device
- Patent number 11,289,593
- Issue date Mar 29, 2022
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor arrangement and method of producing thereof
- Patent number 11,245,002
- Issue date Feb 8, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate structure and method for fabricating semiconductor struct...
- Patent number 11,183,563
- Issue date Nov 23, 2021
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices
- Patent number 11,183,495
- Issue date Nov 23, 2021
- Semiconductor Components Industries, LLC
- Sun-hak Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 11,121,216
- Issue date Sep 14, 2021
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor having a buried field plate
- Patent number 11,114,554
- Issue date Sep 7, 2021
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a group iii-v semiconductor layer co...
- Patent number 11,081,346
- Issue date Aug 3, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with a gate insulating film and a cap layer of si...
- Patent number 11,031,249
- Issue date Jun 8, 2021
- Sumitomo Chemical Company, Limited
- Taiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with doped regions functioning as enhanced re...
- Patent number 10,971,613
- Issue date Apr 6, 2021
- NXP USA, INC.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride high-electron mobility transistors with buried p-...
- Patent number 10,892,356
- Issue date Jan 12, 2021
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
- Patent number 10,886,381
- Issue date Jan 5, 2021
- Chih-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 10,854,711
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride high-electron mobility transistors with deep implan...
- Patent number 10,840,334
- Issue date Nov 17, 2020
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power compound semiconductor field effect transistor devices w...
- Patent number 10,756,206
- Issue date Aug 25, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICES RELATED TO SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN
- Publication number 20240347600
- Publication date Oct 17, 2024
- Skyworks Solutions, Inc.
- Ambarish ROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240304714
- Publication date Sep 12, 2024
- GANEXT (ZHUHAI) TECHNOLOGY CO., LTD
- Yifeng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A TIMING CIRCUIT ARRANGEMENTS FOR FLIP-FLOPS
- Publication number 20240267036
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huaixin XIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240234585
- Publication date Jul 11, 2024
- DB HITEK CO., LTD.
- Hong Sik SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY
- Publication number 20240204055
- Publication date Jun 20, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...
- Publication number 20240105829
- Publication date Mar 28, 2024
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20230299133
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS RELATED TO SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN
- Publication number 20230275127
- Publication date Aug 31, 2023
- Skyworks Solutions, Inc.
- Ambarish ROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230253455
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- YU-SYUAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF PARASITIC ACOUSTIC WAVES IN INTEGRATED CIRCUIT DEVICES
- Publication number 20230216471
- Publication date Jul 6, 2023
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20230170389
- Publication date Jun 1, 2023
- Vanguard International Semiconductor Corporation
- Shin-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING A SUBSTRATE RECESS
- Publication number 20230078017
- Publication date Mar 16, 2023
- Wolfspeed, Inc.
- Evan Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Breakdown Resistant HEMT Substrate and Device
- Publication number 20220173235
- Publication date Jun 2, 2022
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE INCLUDING THE SUBSTR...
- Publication number 20220069085
- Publication date Mar 3, 2022
- Vanguard International Semiconductor Corporation
- Yung-Fong LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR SUBSTRATE, AN...
- Publication number 20220005945
- Publication date Jan 6, 2022
- AIR WATER INC.
- Shigeomi HISHIKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER CO...
- Publication number 20210343525
- Publication date Nov 4, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN
- Publication number 20210257458
- Publication date Aug 19, 2021
- Skyworks Solutions, Inc.
- Ambarish ROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETER...
- Publication number 20210210602
- Publication date Jul 8, 2021
- SCIOCS COMPANY LIMITED
- Takeshi MEGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH GATE CONN...
- Publication number 20210167199
- Publication date Jun 3, 2021
- Cree, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride High-Electron Mobility Transistors with Buried P-...
- Publication number 20210104623
- Publication date Apr 8, 2021
- Cree, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR STRUCT...
- Publication number 20210104604
- Publication date Apr 8, 2021
- Vanguard International Semiconductor Corporation
- Yung-Fong LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20210043726
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Fabricating a Wafer
- Publication number 20200395447
- Publication date Dec 17, 2020
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200357910
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- YU-SYUAN LIN
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR APPARATUS AND METHOD OF MANUFAC...
- Publication number 20200321432
- Publication date Oct 8, 2020
- Jin WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...
- Publication number 20200227547
- Publication date Jul 16, 2020
- NXP USA, Inc.
- Yuanzheng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF N-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND...
- Publication number 20200105904
- Publication date Apr 2, 2020
- CHIH-SHU HUANG
- C30 - CRYSTAL GROWTH
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20200083324
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN
- Publication number 20190386104
- Publication date Dec 19, 2019
- SKYWORKS SOLUTIONS, INC.
- Ambarish ROY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES
- Publication number 20190348412
- Publication date Nov 14, 2019
- Semiconductor Components Industries, LLC
- Sun-hak LEE
- H01 - BASIC ELECTRIC ELEMENTS

of field-effect transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device incorporating a substrate recess

Semiconductor device and method for manufacturing the same

Semiconductor wafer, electronic device, method of performing inspec...

Semiconductor device having a plurality of III-V semiconductor layers

Compound semiconductor device, compound semiconductor substrate, an...

High electron mobility transistor

Methods related to switch body connections to achieve soft breakdown

Method for forming a timing circuit arrangements for flip-flops

Semiconductor device

Group III-nitride high-electron mobility transistors with buried p-...

Semiconductor device and method for manufacturing the same

Isolation structure for active devices

Switch body connections to achieve soft breakdown

Semiconductor device

Method for fabricating semiconductor structure including the substr...

Semiconductor device

Breakdown resistant HEMT substrate and device

Superjunction transistor arrangement and method of producing thereof

Substrate structure and method for fabricating semiconductor struct...

Power semiconductor devices

III-nitride devices including a graded depleting layer

High-electron-mobility transistor having a buried field plate

Semiconductor structure having a group iii-v semiconductor layer co...

Electronic device with a gate insulating film and a cap layer of si...

Semiconductor devices with doped regions functioning as enhanced re...

Group III-nitride high-electron mobility transistors with buried p-...

Epitaxial structure of N-face group III nitride, active device, and...

Isolation structure for active devices

Gallium nitride high-electron mobility transistors with deep implan...

High power compound semiconductor field effect transistor devices w...

Patents Applicationslast 30 patents

DEVICES RELATED TO SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN

SEMICONDUCTOR POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR FORMING A TIMING CIRCUIT ARRANGEMENTS FOR FLIP-FLOPS

SEMICONDUCTOR DEVICE

SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...

ISOLATION STRUCTURE FOR ACTIVE DEVICES

METHODS RELATED TO SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN

SEMICONDUCTOR DEVICE

SUPPRESSION OF PARASITIC ACOUSTIC WAVES IN INTEGRATED CIRCUIT DEVICES

HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE INCORPORATING A SUBSTRATE RECESS

Breakdown Resistant HEMT Substrate and Device

METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE INCLUDING THE SUBSTR...

COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR SUBSTRATE, AN...

SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER CO...

SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN

SEMICONDUCTOR WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETER...

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH GATE CONN...

Group III-Nitride High-Electron Mobility Transistors with Buried P-...

SUBSTRATE STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR STRUCT...

ISOLATION STRUCTURE FOR ACTIVE DEVICES

Semiconductor Device and Method for Fabricating a Wafer

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, SEMICONDUCTOR APPARATUS AND METHOD OF MANUFAC...

SEMICONDUCTOR DEVICES WITH DOPED REGIONS FUNCTIONING AS ENHANCED RE...

EPITAXIAL STRUCTURE OF N-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND...

ISOLATION STRUCTURE FOR ACTIVE DEVICES

SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN

POWER SEMICONDUCTOR DEVICES