of silicon on insulator

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CPC
H01L21/3226

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/3226of silicon on insulator

Industries

Patents Grantslast 30 patents

Information Patent Grant
Methods and devices related to radio frequency devices
- Patent number 11,948,802
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Hans Taddiken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,942,360
- Issue date Mar 26, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a porous portion in a substrate
- Patent number 11,901,194
- Issue date Feb 13, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator (SOI) device and forming method thereof
- Patent number 11,888,025
- Issue date Jan 30, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 11,887,885
- Issue date Jan 30, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor wafer composed of monocrystall...
- Patent number 11,639,558
- Issue date May 2, 2023
- Siltronic AG
- Timo Mueller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,626,318
- Issue date Apr 11, 2023
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 11,587,825
- Issue date Feb 21, 2023
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for radio-frequency applications
- Patent number RE49365
- Issue date Jan 10, 2023
- Soitec
- Oleg Kononchuk
Information Patent Grant
Epitaxy substrate and method of manufacturing the same
- Patent number 11,538,681
- Issue date Dec 27, 2022
- GlobalWafers Co., Ltd.
- Ying-Ru Shih
- C30 - CRYSTAL GROWTH
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 11,532,501
- Issue date Dec 20, 2022
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon on insulator structure and method of making the same
- Patent number 11,393,712
- Issue date Jul 19, 2022
- ZING SEMICONDUCTOR CORPORATION
- Xing Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 11,380,576
- Issue date Jul 5, 2022
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RFSOI semiconductor structures including a nitrogen-doped charge-tr...
- Patent number 11,362,176
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices related to radio frequency devices
- Patent number 11,217,453
- Issue date Jan 4, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Hans Taddiken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for embedded gettering in a silicon on insulat...
- Patent number 11,211,259
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pu-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered polysilicon and oxygen-doped polysilicon design for R...
- Patent number 11,171,015
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,075,109
- Issue date Jul 27, 2021
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing bonded SOI wafer
- Patent number 11,056,381
- Issue date Jul 6, 2021
- Shin-Etsu Handotai Co., Ltd.
- Toru Ishizuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Managed substrate effects for stabilized SOI FETs
- Patent number 10,971,359
- Issue date Apr 6, 2021
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 10,943,813
- Issue date Mar 9, 2021
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for gettering impurities in semiconductors
- Patent number 10,937,665
- Issue date Mar 2, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing an isolation region in a high resistivity silic...
- Patent number 10,825,718
- Issue date Nov 3, 2020
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating layer structure for semiconductor product, and preparati...
- Patent number 10,748,989
- Issue date Aug 18, 2020
- Shenyang Silicon Technology Co., Ltd.
- Wenlin Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing SOI wafer by using rapid thermal processing
- Patent number 10,658,226
- Issue date May 19, 2020
- Shenyang Silicon Technology Co., Ltd.
- Jie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing bonded SOI wafer
- Patent number 10,566,196
- Issue date Feb 18, 2020
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Managed substrate effects for stabilized SOI FETs
- Patent number 10,546,747
- Issue date Jan 28, 2020
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a semiconductor element comprising a highl...
- Patent number 10,510,531
- Issue date Dec 17, 2019
- Soitec
- Oleg Kononchuk
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity silicon-on-insulator substrate comprising an isola...
- Patent number 10,475,695
- Issue date Nov 12, 2019
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing substrate with carrier trapping center
- Patent number 10,361,114
- Issue date Jul 23, 2019
- Shanghai Simgui Technology Co., Ltd.
- Xing Wei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND DEVICES RELATED TO RADIO FREQUENCY DEVICES
- Publication number 20240145253
- Publication date May 2, 2024
- Infineon Technologies Dresden GmbH & Co., KG
- Hans Taddiken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR DEVICE
- Publication number 20240128317
- Publication date Apr 18, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLA...
- Publication number 20230163022
- Publication date May 25, 2023
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...
- Publication number 20230062816
- Publication date Mar 2, 2023
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Application
RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...
- Publication number 20220320277
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Ta WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR (SOI) DEVICE AND FORMING METHOD THEREOF
- Publication number 20220130956
- Publication date Apr 28, 2022
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Embedded Gettering in a Silicon On Insulat...
- Publication number 20220122849
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pu-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS...
- Publication number 20220076993
- Publication date Mar 10, 2022
- SOITEC
- Yvan Morandini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE OF THE SEMI-CONDUCTOR-ON-INSULATOR TYPE FOR RADIOFREQUENC...
- Publication number 20220076991
- Publication date Mar 10, 2022
- SOITEC
- Kim Young Pil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS
- Publication number 20220076992
- Publication date Mar 10, 2022
- SOITEC
- Yvan Morandini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED POLYSILICON AND OXYGEN-DOPED POLYSILICON DESIGN FOR R...
- Publication number 20220059364
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING THE SAME
- Publication number 20210375638
- Publication date Dec 2, 2021
- WAFER WORKS CORPORATION
- Wen-Chung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...
- Publication number 20210242075
- Publication date Aug 5, 2021
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A POROUS PORTION IN A SUBSTRATE
- Publication number 20210210357
- Publication date Jul 8, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Shay REBOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...
- Publication number 20210159114
- Publication date May 27, 2021
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED POLYSILICON AND OXYGEN-DOPED POLYSILICON DESIGN FOR R...
- Publication number 20210074551
- Publication date Mar 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Devices Related to Radio Frequency Devices
- Publication number 20210043497
- Publication date Feb 11, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Hans Taddiken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...
- Publication number 20210035855
- Publication date Feb 4, 2021
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...
- Publication number 20210013091
- Publication date Jan 14, 2021
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Managed Substrate Effects for Stabilized SOI FETs
- Publication number 20200176252
- Publication date Jun 4, 2020
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200075328
- Publication date Mar 5, 2020
- GLOBALWAFERS CO., LTD.
- Ying-Ru Shih
- C30 - CRYSTAL GROWTH
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...
- Publication number 20200020571
- Publication date Jan 16, 2020
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING SOI WAFER BY USING RAPID THERMAL PROCESSING
- Publication number 20190326160
- Publication date Oct 24, 2019
- Shenyang Silicon Technology Co., Ltd.
- Jie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Embedded Gettering in a Silicon On Insulat...
- Publication number 20190326128
- Publication date Oct 24, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pu-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING LAYER STRUCTURE FOR SEMICONDUCTOR PRODUCT, AND PREPARATI...
- Publication number 20190237540
- Publication date Aug 1, 2019
- Shenyang Silicon Technology Co., Ltd.
- Wenlin GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...
- Publication number 20190214294
- Publication date Jul 11, 2019
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR GETTERING IMPURITIES IN SEMICONDUCTORS
- Publication number 20190189464
- Publication date Jun 20, 2019
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Managed Substrate Effects for Stabilized SOI FETs
- Publication number 20190057868
- Publication date Feb 21, 2019
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Managed Substrate Effects for Stabilized SOI FETs
- Publication number 20180337043
- Publication date Nov 22, 2018
- pSemi Corporation
- Robert Mark Englekirk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING BONDED SOI WAFER
- Publication number 20180247860
- Publication date Aug 30, 2018
- Shin-Etsu Handotai Co., Ltd.
- Toru ISHIZUKA
- C30 - CRYSTAL GROWTH

of silicon on insulator

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods and devices related to radio frequency devices

Radio frequency silicon on insulator structure with superior perfor...

Method of forming a porous portion in a substrate

Silicon on insulator (SOI) device and forming method thereof

Radio frequency silicon on insulator wafer platform with superior p...

Method for producing a semiconductor wafer composed of monocrystall...

Radio frequency silicon on insulator structure with superior perfor...

Method of preparing an isolation region in a high resistivity silic...

Structure for radio-frequency applications

Epitaxy substrate and method of manufacturing the same

Radio frequency silicon on insulator wafer platform with superior p...

Silicon on insulator structure and method of making the same

Method of preparing an isolation region in a high resistivity silic...

RFSOI semiconductor structures including a nitrogen-doped charge-tr...

Methods and devices related to radio frequency devices

Structure and method for embedded gettering in a silicon on insulat...

Multi-layered polysilicon and oxygen-doped polysilicon design for R...

Radio frequency silicon on insulator structure with superior perfor...

Method for producing bonded SOI wafer

Managed substrate effects for stabilized SOI FETs

Radio frequency silicon on insulator wafer platform with superior p...

Methods and apparatus for gettering impurities in semiconductors

Method of preparing an isolation region in a high resistivity silic...

Insulating layer structure for semiconductor product, and preparati...

Method for preparing SOI wafer by using rapid thermal processing

Method for manufacturing bonded SOI wafer

Managed substrate effects for stabilized SOI FETs

Method of fabrication of a semiconductor element comprising a highl...

High resistivity silicon-on-insulator substrate comprising an isola...

Method for preparing substrate with carrier trapping center

Patents Applicationslast 30 patents

METHODS AND DEVICES RELATED TO RADIO FREQUENCY DEVICES

SILICON ON INSULATOR DEVICE

HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING AN ISOLA...

RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...

RFSOI SEMICONDUCTOR STRUCTURES INCLUDING A NITROGEN-DOPED CHARGE-TR...

SILICON ON INSULATOR (SOI) DEVICE AND FORMING METHOD THEREOF

Structure and Method for Embedded Gettering in a Silicon On Insulat...

SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS...

SUBSTRATE OF THE SEMI-CONDUCTOR-ON-INSULATOR TYPE FOR RADIOFREQUENC...

SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS

MULTI-LAYERED POLYSILICON AND OXYGEN-DOPED POLYSILICON DESIGN FOR R...

SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING THE SAME

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...

METHOD OF FORMING A POROUS PORTION IN A SUBSTRATE

RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...

MULTI-LAYERED POLYSILICON AND OXYGEN-DOPED POLYSILICON DESIGN FOR R...

Methods and Devices Related to Radio Frequency Devices

METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...

METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...

Managed Substrate Effects for Stabilized SOI FETs

EPITAXY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...

METHOD FOR PREPARING SOI WAFER BY USING RAPID THERMAL PROCESSING

Structure and Method for Embedded Gettering in a Silicon On Insulat...

INSULATING LAYER STRUCTURE FOR SEMICONDUCTOR PRODUCT, AND PREPARATI...

METHOD OF PREPARING AN ISOLATION REGION IN A HIGH RESISTIVITY SILIC...

METHODS AND APPARATUS FOR GETTERING IMPURITIES IN SEMICONDUCTORS

Managed Substrate Effects for Stabilized SOI FETs

Managed Substrate Effects for Stabilized SOI FETs

METHOD FOR PRODUCING BONDED SOI WAFER