of the bipolar type

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CPC
H01L27/2445

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/2445of the bipolar type

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory cell and memory array select transistor
- Patent number 11,600,663
- Issue date Mar 7, 2023
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric read operation resistive random-access memory cell with b...
- Patent number 11,411,049
- Issue date Aug 9, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 11,295,813
- Issue date Apr 5, 2022
- Zeno Semiconductor Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit including transistors having a common base
- Patent number 11,211,428
- Issue date Dec 28, 2021
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,201,192
- Issue date Dec 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,183,538
- Issue date Nov 23, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including bipolar transistors
- Patent number 11,152,430
- Issue date Oct 19, 2021
- STMicroelectronics (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned interconnection for integrated circuits
- Patent number 11,049,769
- Issue date Jun 29, 2021
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional stackable multi-layer cross-point memory with bip...
- Patent number 11,018,188
- Issue date May 25, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 11,011,579
- Issue date May 18, 2021
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and method to enhance efficiency of memory
- Patent number 10,950,658
- Issue date Mar 16, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Chang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,910,437
- Issue date Feb 2, 2021
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional stackable multi-layer cross-point memory with sin...
- Patent number 10,903,275
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized elements
- Patent number 10,886,332
- Issue date Jan 5, 2021
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 10,867,676
- Issue date Dec 15, 2020
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,854,675
- Issue date Dec 1, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector-resistive random access memory cell
- Patent number 10,804,323
- Issue date Oct 13, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xuan Anh Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned high density and size adjustable phase change memory
- Patent number 10,803,933
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated 1T1R RRAM memory cell
- Patent number 10,706,921
- Issue date Jul 7, 2020
- Intel Corporation
- Elijah V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of operating memory devices and apparatuses
- Patent number 10,658,428
- Issue date May 19, 2020
- Micron Technology, Inc.
- Ugo Russo
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 10,636,843
- Issue date Apr 28, 2020
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally optimized phase change memory cells and methods of fabric...
- Patent number 10,636,966
- Issue date Apr 28, 2020
- Micron Technology, Inc.
- Mattia Boniardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with independently-sized elements
- Patent number 10,573,689
- Issue date Feb 25, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level phase change device
- Patent number 10,460,801
- Issue date Oct 29, 2019
- Western Digital Technologies, Inc.
- Jeffrey Lille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,439,001
- Issue date Oct 8, 2019
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Clamp elements for phase change memory arrays
- Patent number 10,431,739
- Issue date Oct 1, 2019
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming MOS and bipolar transistors
- Patent number 10,381,344
- Issue date Aug 13, 2019
- STMicroelectronics (Crolles 2) SAS
- Olivier Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,367,033
- Issue date Jul 30, 2019
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory having both volatile and non-volatile function...
- Patent number 10,340,006
- Issue date Jul 2, 2019
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Switching element, semiconductor device, and semiconductor device m...
- Patent number 10,312,288
- Issue date Jun 4, 2019
- NEC Corporation
- Munehiro Tada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELEC...
- Publication number 20240196628
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240172455
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ELEMENTS ACCESSED BY BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240147736
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE
- Publication number 20220321022
- Publication date Oct 6, 2022
- Mitsubishi Electric Corporation
- Takuya SHIRAISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC READ OPERATION RESISTIVE RANDOM-ACCESS MEMORY CELL WITH B...
- Publication number 20220199688
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20220199160
- Publication date Jun 23, 2022
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE
- Publication number 20220115441
- Publication date Apr 14, 2022
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IN-MEMORY CONVOLUTIONAL COMPUTATION AND CORRESPONDING IN...
- Publication number 20220044099
- Publication date Feb 10, 2022
- STMicroelectronics S.r. I.
- Antonino Conte
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS
- Publication number 20220020816
- Publication date Jan 20, 2022
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED TRANSISTORS AND PHASE CHANGE MEMORY
- Publication number 20210343788
- Publication date Nov 4, 2021
- STMicroelectronics (Crolles 2) SAS
- Remy BERTHELON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20210202575
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20210110872
- Publication date Apr 15, 2021
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210013263
- Publication date Jan 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL STACKABLE MULTI-LAYER CROSS-POINT MEMORY WITH BIP...
- Publication number 20200381480
- Publication date Dec 3, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL STACKABLE MULTI-LAYER CROSS-POINT MEMORY WITH SIN...
- Publication number 20200381481
- Publication date Dec 3, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200227481
- Publication date Jul 16, 2020
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL AND MEMORY ARRAY SELECT TRANSISTOR
- Publication number 20200227478
- Publication date Jul 16, 2020
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS
- Publication number 20200144329
- Publication date May 7, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY
- Publication number 20200098823
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-CHANG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned High Density and Size Adjustable Phase Change Memory
- Publication number 20200066337
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Injo OK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20200027926
- Publication date Jan 23, 2020
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20190355789
- Publication date Nov 21, 2019
- Micron Technology, Inc.
- Ombretta Donghi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE
- Publication number 20190312087
- Publication date Oct 10, 2019
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS
- Publication number 20190312088
- Publication date Oct 10, 2019
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20190267089
- Publication date Aug 29, 2019
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THERMALLY OPTIMIZED PHASE CHANGE MEMORY CELLS AND METHODS OF FABRIC...
- Publication number 20190252608
- Publication date Aug 15, 2019
- Micron Technology, Inc.
- Mattia Boniardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190189692
- Publication date Jun 20, 2019
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR-RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20190148454
- Publication date May 16, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xuan Anh TRAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS
- Publication number 20190109176
- Publication date Apr 11, 2019
- Micron Technology, Inc.
- Samuele Sciarrillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF OPERATING MEMORY DEVICES AND ELECTRONIC SYSTEMS
- Publication number 20190081104
- Publication date Mar 14, 2019
- Micron Technology, Inc.
- Ugo Russo
- H01 - BASIC ELECTRIC ELEMENTS

of the bipolar type

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory cell and memory array select transistor

Symmetric read operation resistive random-access memory cell with b...

Semiconductor memory having both volatile and non-volatile function...

Integrated circuit including transistors having a common base

Memory device and method of manufacturing the same

Memory device and method of manufacturing the same

Integrated circuit including bipolar transistors

Self-aligned interconnection for integrated circuits

Three-dimensional stackable multi-layer cross-point memory with bip...

Cross-point memory and methods for fabrication of same

Circuit and method to enhance efficiency of memory

Cross-point memory and methods for fabrication of same

Three-dimensional stackable multi-layer cross-point memory with sin...

Memory cell with independently-sized elements

Semiconductor memory having both volatile and non-volatile function...

Cross-point memory and methods for fabrication of same

Selector-resistive random access memory cell

Self-aligned high density and size adjustable phase change memory

Integrated 1T1R RRAM memory cell

Methods of operating memory devices and apparatuses

Memory device and method of manufacturing the same

Thermally optimized phase change memory cells and methods of fabric...

Memory cell with independently-sized elements

Multi-level phase change device

Cross-point memory and methods for fabrication of same

Clamp elements for phase change memory arrays

Method of forming MOS and bipolar transistors

Cross-point memory and methods for fabrication of same

Semiconductor memory having both volatile and non-volatile function...

Switching element, semiconductor device, and semiconductor device m...

Patents Applicationslast 30 patents

MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELEC...

ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS

RESISTIVE MEMORY ELEMENTS ACCESSED BY BIPOLAR JUNCTION TRANSISTORS

SEMICONDUCTOR MODULE

SYMMETRIC READ OPERATION RESISTIVE RANDOM-ACCESS MEMORY CELL WITH B...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE

METHOD FOR IN-MEMORY CONVOLUTIONAL COMPUTATION AND CORRESPONDING IN...

INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS

STRAINED TRANSISTORS AND PHASE CHANGE MEMORY

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

THREE-DIMENSIONAL STACKABLE MULTI-LAYER CROSS-POINT MEMORY WITH BIP...

THREE-DIMENSIONAL STACKABLE MULTI-LAYER CROSS-POINT MEMORY WITH SIN...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MEMORY CELL AND MEMORY ARRAY SELECT TRANSISTOR

MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS

CIRCUIT AND METHOD TO ENHANCE EFFICIENCY OF MEMORY

Self-Aligned High Density and Size Adjustable Phase Change Memory

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

INTEGRATED CIRCUIT INCLUDING TRANSISTORS HAVING A COMMON BASE

INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

THERMALLY OPTIMIZED PHASE CHANGE MEMORY CELLS AND METHODS OF FABRIC...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

SELECTOR-RESISTIVE RANDOM ACCESS MEMORY CELL

MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS

METHODS OF OPERATING MEMORY DEVICES AND ELECTRONIC SYSTEMS