of the Ovonic threshold switching type

Industry

CPC
H01L27/2427

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/2427of the Ovonic threshold switching type

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory device including a memory element between wiring layers and...
- Patent number 11,683,942
- Issue date Jun 20, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Jun Sumino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,665,912
- Issue date May 30, 2023
- SK hynix Inc.
- Tae Jung Ha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,641,749
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Dong Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pretreatment method of selector device
- Patent number 11,641,748
- Issue date May 2, 2023
- Huazhong University of Science & Technology
- Hao Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming resistive memory cell having an ovonic threshold...
- Patent number 11,637,144
- Issue date Apr 25, 2023
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer phase change memory device
- Patent number 11,621,394
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Kevin W. Brew
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device and operating method thereof
- Patent number 11,615,841
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Bilal Ahmad Janjua
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 11,600,665
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multitier arrangements of integrated devices, and methods of formin...
- Patent number 11,600,666
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device controlling for misalignment
- Patent number 11,594,529
- Issue date Feb 28, 2023
- Samsung Electronics Co., Ltd.
- Min Chul Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, memory cell and method of forming the same
- Patent number 11,594,576
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,587,977
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Dong-Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,581,367
- Issue date Feb 14, 2023
- Samsung Electronics Co., Ltd.
- Dongho Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned cross-point phase change memory-switch array
- Patent number 11,563,055
- Issue date Jan 24, 2023
- Micron Technology, Inc.
- Jong Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including phase change material layers...
- Patent number 11,563,056
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device
- Patent number 11,545,214
- Issue date Jan 3, 2023
- Samsung Electronics Co., Ltd.
- Masayuki Terai
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of electrodes for memory cells
- Patent number 11,545,623
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded memory devices and methods of making the same
- Patent number 11,538,817
- Issue date Dec 27, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based threshold switching device and memory diode
- Patent number 11,527,573
- Issue date Dec 13, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Kai Fu
- G11 - INFORMATION STORAGE
Information Patent Grant
Connections for memory electrode lines
- Patent number 11,522,014
- Issue date Dec 6, 2022
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method of the same
- Patent number 11,520,652
- Issue date Dec 6, 2022
- Samsung Electronics Co., Ltd.
- Doyoung Im
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor devices including a passive material between memory c...
- Patent number 11,515,358
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,502,132
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Jinwook Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned memory decks in cross-point memory arrays
- Patent number 11,489,117
- Issue date Nov 1, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device including a low-k d...
- Patent number 11,476,419
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Youngmin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch device, storage apparatus, and memory system incorporating b...
- Patent number 11,462,685
- Issue date Oct 4, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroaki Sei
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20240180047
- Publication date May 30, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boron Surface Passivation of Phase Change Memory Material
- Publication number 20240099166
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE MEMORY DEVICE
- Publication number 20240065119
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER OVONIC THRESHOLD SWITCH (OTS) FOR SWITCHING DEVICES AND...
- Publication number 20240015987
- Publication date Jan 11, 2024
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY ENHANCED SELECTOR STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230422517
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Ju LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SELECTOR FOR MEMORY DEVICE
- Publication number 20230397440
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME
- Publication number 20230397439
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SELECTOR
- Publication number 20230371279
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED PHASE CHANGE MEMORY STRUCTURE TO IMPROVE NUCLEATION TIME...
- Publication number 20230371408
- Publication date Nov 16, 2023
- Intel Corporation
- Lu LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF DEPOSITING MEMORY CELL ELECTRODE MATERIALS...
- Publication number 20230354723
- Publication date Nov 2, 2023
- Intel Corporation
- Gowtham Sriram Jawaharram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230301117
- Publication date Sep 21, 2023
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20230284463
- Publication date Sep 7, 2023
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SILICIDE LAYER FOR MEMORY ARRAY
- Publication number 20230276639
- Publication date Aug 31, 2023
- Intel Corporation
- Viswas Reddy Pola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK
- Publication number 20230270024
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching Ju Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING OVONIC THRESHOLD SWITCH SELECTORS USING MICROWAVE...
- Publication number 20230247843
- Publication date Aug 3, 2023
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Oleksandr MOSENDZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FORMING THE SAME AND INTEGRATED CIRCUIT
- Publication number 20230240081
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sam Vaziri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVONIC THRESHOLD SWITCH SELECTORS WITH HIGH-CONDUCTIVITY CURRENT SP...
- Publication number 20230232639
- Publication date Jul 20, 2023
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Oleksandr MOSENDZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHALCOGENIDE-BASED MATERIAL, AND SWITCHING DEVICE AND MEMORY DEVICE...
- Publication number 20230091136
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Kiyeon YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONNECTIONS FOR MEMORY ELECTRODE LINES
- Publication number 20230073464
- Publication date Mar 9, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME
- Publication number 20230065500
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES
- Publication number 20230048180
- Publication date Feb 16, 2023
- Samsung Electronics Co., Ltd.
- Segab Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND A DEVICE INTENDED...
- Publication number 20230047263
- Publication date Feb 16, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Anthonin VERDY
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20230043854
- Publication date Feb 9, 2023
- SK HYNIX INC.
- Gwang Hyuk SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...
- Publication number 20230029529
- Publication date Feb 2, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220415968
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHALCOGENIDE MATERIAL, DEVICE AND MEMORY DEVICE INCLUDING THE SAME
- Publication number 20220406842
- Publication date Dec 22, 2022
- Samsung Electronics Co., Ltd.
- Hajun SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WITH LAMINATED CELL
- Publication number 20220407000
- Publication date Dec 22, 2022
- Macronix International Co., Ltd.
- Chih-Hsiang YANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MEMORY DEVICE
- Publication number 20220399488
- Publication date Dec 15, 2022
- KIOXIA Corporation
- Kunifumi SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
- Publication number 20220392959
- Publication date Dec 8, 2022
- SK HYNIX INC.
- Bong Hoon JANG
- H01 - BASIC ELECTRIC ELEMENTS

of the Ovonic threshold switching type

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device including a memory element between wiring layers and...

Semiconductor devices comprising threshold switching materials

Semiconductor device and method of forming the same

Non-volatile memory

Electronic device and method for fabricating the same

Memory devices

Semiconductor device and method for fabricating the same

Pretreatment method of selector device

Method of forming resistive memory cell having an ovonic threshold...

Multi-layer phase change memory device

Memory device and operating method thereof

Cross-point memory and methods for fabrication of same

Multitier arrangements of integrated devices, and methods of formin...

Nonvolatile memory device controlling for misalignment

Semiconductor device, memory cell and method of forming the same

Memory device and method of manufacturing the same

Semiconductor device

Self-aligned cross-point phase change memory-switch array

Semiconductor memory device including phase change material layers...

Resistive memory device

Fabrication of electrodes for memory cells

Bonded memory devices and methods of making the same

GaN-based threshold switching device and memory diode

Connections for memory electrode lines

Memory device and operating method of the same

Semiconductor devices including a passive material between memory c...

Semiconductor memory device

Self-aligned memory decks in cross-point memory arrays

Method for manufacturing a semiconductor device including a low-k d...

Switch device, storage apparatus, and memory system incorporating b...

Patents Applicationslast 30 patents

PHASE CHANGE MEMORY

Boron Surface Passivation of Phase Change Memory Material

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

VERTICAL PHASE CHANGE MEMORY DEVICE

MULTI-LAYER OVONIC THRESHOLD SWITCH (OTS) FOR SWITCHING DEVICES AND...

THERMALLY ENHANCED SELECTOR STRUCTURE AND METHODS OF FORMING THE SAME

NOVEL SELECTOR FOR MEMORY DEVICE

SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME

MEMORY SELECTOR

OPTIMIZED PHASE CHANGE MEMORY STRUCTURE TO IMPROVE NUCLEATION TIME...

STRUCTURE AND METHOD OF DEPOSITING MEMORY CELL ELECTRODE MATERIALS...

MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

METAL SILICIDE LAYER FOR MEMORY ARRAY

MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK

METHOD OF MAKING OVONIC THRESHOLD SWITCH SELECTORS USING MICROWAVE...

MEMORY DEVICE AND METHOD OF FORMING THE SAME AND INTEGRATED CIRCUIT

OVONIC THRESHOLD SWITCH SELECTORS WITH HIGH-CONDUCTIVITY CURRENT SP...

CHALCOGENIDE-BASED MATERIAL, AND SWITCHING DEVICE AND MEMORY DEVICE...

CONNECTIONS FOR MEMORY ELECTRODE LINES

SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME

MEMORY DEVICES

ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND A DEVICE INTENDED...

ELECTRONIC DEVICE

DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

CHALCOGENIDE MATERIAL, DEVICE AND MEMORY DEVICE INCLUDING THE SAME

MEMORY WITH LAMINATED CELL

MEMORY DEVICE

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE