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H01L29/475

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/475on AIII-BV compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,166,117
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Luca Sayadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gate terminal of a HEMT device, and HEMT...
- Patent number 12,165,871
- Issue date Dec 10, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,677
- Issue date Nov 12, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 12,132,103
- Issue date Oct 29, 2024
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,137
- Issue date Oct 1, 2024
- FLOSFIA INC.
- Mitsuru Okigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 12,100,757
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of III-V semiconductor layers
- Patent number 12,087,820
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,074,202
- Issue date Aug 27, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and method of fabricating the same
- Patent number 12,046,669
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superconductor gate semiconductor field-effect transistor
- Patent number 12,009,414
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Eunjung Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a III-N enhancement mode HEMT device
- Patent number 12,002,680
- Issue date Jun 4, 2024
- Imec VZW
- Niels Posthuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high electron mobility transistor
- Patent number 11,929,407
- Issue date Mar 12, 2024
- Vanguard International Semiconductor Corporation
- Ting-En Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 11,876,128
- Issue date Jan 16, 2024
- Walter Tony Wohlmuth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,837,656
- Issue date Dec 5, 2023
- Fuji Electric Co., Ltd.
- Katsunori Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including an improved gate region and related manuf...
- Patent number 11,799,025
- Issue date Oct 24, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 11,784,053
- Issue date Oct 10, 2023
- Sumitomo Electric Device Innovations, Inc.
- Yukinori Nose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,769,841
- Issue date Sep 26, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and nitride semiconductor package
- Patent number 11,769,825
- Issue date Sep 26, 2023
- Rohm Co., Ltd.
- Taketoshi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method of manufacturing the same
- Patent number 11,757,029
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaejoon Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and semiconductor device
- Patent number 11,749,622
- Issue date Sep 5, 2023
- SUMITOMO DEVICE INNOVATIONS, INC.
- Chihoko Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 11,742,419
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a HEMT device with reduced gate leakage cur...
- Patent number 11,728,404
- Issue date Aug 15, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
HEMT and method of fabricating the same
- Patent number 11,721,751
- Issue date Aug 8, 2023
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming a high electron mobility transistor including a...
- Patent number 11,710,773
- Issue date Jul 25, 2023
- Sumitomo Electric Industries, Ltd.
- Kenta Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride component and drive circuit thereof
- Patent number 11,705,494
- Issue date Jul 18, 2023
- Huawei Technologies Co., Ltd.
- Boning Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,694,900
- Issue date Jul 4, 2023
- Kabushiki Kaisha Toshiba
- Toshiyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductors with improved thermal budget and process of making s...
- Patent number 11,658,233
- Issue date May 23, 2023
- Wolfspeed, Inc.
- Kyoung-Keun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,646,382
- Issue date May 9, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429297
- Publication date Dec 26, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240413233
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Yi-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240332370
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED GATE FINS
- Publication number 20240332409
- Publication date Oct 3, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20240332411
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR, RADIO FREQUENCY TRANSISTOR, POWE...
- Publication number 20240322029
- Publication date Sep 26, 2024
- Huawei Technologies Co., Ltd
- Bin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR
- Publication number 20240321634
- Publication date Sep 26, 2024
- Sumitomo Electric Industries, Ltd.
- Yukihiro TSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND ELECTRONIC DEVICE INCLUDING T...
- Publication number 20240274689
- Publication date Aug 15, 2024
- Samsung Electronics Co., Ltd.
- Injun HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240266428
- Publication date Aug 8, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke KANDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240258398
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Junhyuk PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A PRIMARY GATE WRAPPING A FLOATING SECONDARY GATE
- Publication number 20240234533
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...
- Publication number 20240204091
- Publication date Jun 20, 2024
- Intel Corporation
- Heli Vora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20240194759
- Publication date Jun 13, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Changeable Polarization Direction
- Publication number 20240162338
- Publication date May 16, 2024
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH PHOTODIODE, HIGH ELECTRON MOBILITY TRANSISTOR, SURFA...
- Publication number 20240162208
- Publication date May 16, 2024
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...
- Publication number 20240120404
- Publication date Apr 11, 2024
- POWDEC K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240079470
- Publication date Mar 7, 2024
- Peking University
- Jin WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240072126
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF MESFET DEVICE WITH STACKED GATE CONTACT
- Publication number 20240038869
- Publication date Feb 1, 2024
- Farshid Raissi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR INCLUDING AN IMPROVED GATE REGION AND RELATED MANUF...
- Publication number 20240021718
- Publication date Jan 18, 2024
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20240006498
- Publication date Jan 4, 2024
- Huawei Technologies Co., Ltd
- Samir Mouhoubi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Power Transistor
- Publication number 20230411486
- Publication date Dec 21, 2023
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF P-GAN GATE DOUBLE CHANNEL HEMT AND THE MANUFACTURING M...
- Publication number 20230411507
- Publication date Dec 21, 2023
- THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Jing CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20230361208
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230352540
- Publication date Nov 2, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20230335597
- Publication date Oct 19, 2023
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230326758
- Publication date Oct 12, 2023
- Mitsubishi Electric Corporation
- Koichiro NISHIZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT AND METHOD OF FABRICATING THE SAME
- Publication number 20230317840
- Publication date Oct 5, 2023
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD T...
- Publication number 20230299169
- Publication date Sep 21, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Jih-Wen Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SE...
- Publication number 20230253471
- Publication date Aug 10, 2023
- Rohm Co., Ltd.
- TSUYOSHI TACHI
- H01 - BASIC ELECTRIC ELEMENTS

on AIII-BV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Group III nitride-based transistor device

Method for manufacturing a gate terminal of a HEMT device, and HEMT...

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Semiconductor device

High electron mobility transistor and fabrication method thereof

Transistor with multi-level self-aligned gate and source/drain term...

Semiconductor device

Cap structure coupled to source to reduce saturation current in HEM...

Semiconductor device having a plurality of III-V semiconductor layers

Nitride-based semiconductor device and method for manufacturing the...

HEMT and method of fabricating the same

Superconductor gate semiconductor field-effect transistor

Method of manufacturing a III-N enhancement mode HEMT device

Method of fabricating high electron mobility transistor

Field effect transistor

Nitride semiconductor device

HEMT transistor including an improved gate region and related manuf...

Semiconductor device manufacturing method

Junction barrier Schottky diode device and method for fabricating t...

Nitride semiconductor device and nitride semiconductor package

High electron mobility transistor and method of manufacturing the same

Field effect transistor and semiconductor device

Cap structure coupled to source to reduce saturation current in HEM...

Method of manufacturing a HEMT device with reduced gate leakage cur...

HEMT and method of fabricating the same

Process of forming a high electron mobility transistor including a...

Gallium nitride component and drive circuit thereof

Semiconductor device and method for manufacturing the same

Semiconductors with improved thermal budget and process of making s...

Junction barrier Schottky diode device and method for fabricating t...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

GALLIUM NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED GATE FINS

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

HIGH ELECTRON MOBILITY TRANSISTOR, RADIO FREQUENCY TRANSISTOR, POWE...

TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR

HIGH ELECTRON MOBILITY TRANSISTOR AND ELECTRONIC DEVICE INCLUDING T...

SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR WITH A PRIMARY GATE WRAPPING A FLOATING SECONDARY GATE

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...

FIELD EFFECT TRANSISTOR

Semiconductor Device with a Changeable Polarization Direction

STRUCTURE WITH PHOTODIODE, HIGH ELECTRON MOBILITY TRANSISTOR, SURFA...

NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFEC...

GAN POWER DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

NORMALLY-OFF MESFET DEVICE WITH STACKED GATE CONTACT

HEMT TRANSISTOR INCLUDING AN IMPROVED GATE REGION AND RELATED MANUF...

FIELD EFFECT TRANSISTOR DEVICE

Gallium Nitride Power Transistor

NORMALLY-OFF P-GAN GATE DOUBLE CHANNEL HEMT AND THE MANUFACTURING M...

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

GALLIUM NITRIDE POWER TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

HEMT AND METHOD OF FABRICATING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD T...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SE...