on an insulating layer or substrate

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H01L29/7394

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7394on an insulating layer or substrate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate bipolar transistor
- Patent number 12,119,395
- Issue date Oct 15, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of making
- Patent number 12,100,754
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with anti-parallelly connected FWD on a common substrate
- Patent number 12,080,705
- Issue date Sep 3, 2024
- Mitsubishi Electric Corporation
- Kenji Hamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral homogenization field high voltage power semiconductor d...
- Patent number 11,888,022
- Issue date Jan 30, 2024
- University of Electronic Science and Technology of China
- Wentong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor (BJT) structure and related method
- Patent number 11,588,044
- Issue date Feb 21, 2023
- GLOBALFOUNDRIES U.S. INC.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor and method
- Patent number 11,575,029
- Issue date Feb 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,569,371
- Issue date Jan 31, 2023
- Dynex Semiconductor Limited
- Ian Deviny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier storage enhanced superjunction IGBT
- Patent number 11,552,184
- Issue date Jan 10, 2023
- Sichuan University
- Mingmin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and diode
- Patent number 11,444,187
- Issue date Sep 13, 2022
- Rohm Co., Ltd.
- Kohei Shinsho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiMOS transistor
- Patent number 11,387,354
- Issue date Jul 12, 2022
- STMicroelectronics S.A.
- Philippe Galy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor with low turn-on overshoo...
- Patent number 11,367,785
- Issue date Jun 21, 2022
- Southeast University
- Jing Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 11,348,997
- Issue date May 31, 2022
- Vanguard International Semiconductor Corporation
- Ankit Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal (MIM) capacitor
- Patent number 11,335,816
- Issue date May 17, 2022
- Sumitomo Electric Device Innovations, Inc.
- Yoshihide Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module and power conversion apparatus
- Patent number 11,271,043
- Issue date Mar 8, 2022
- Mitsubishi Electric Corporation
- Shota Morisaki
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device with a LOCOS trench
- Patent number 11,239,351
- Issue date Feb 1, 2022
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing semiconductor device,...
- Patent number 11,239,350
- Issue date Feb 1, 2022
- Mitsubishi Electric Corporation
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,133,393
- Issue date Sep 28, 2021
- Renesas Electronics Corporation
- Nobue Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip contact structure, device assembly, and method o...
- Patent number 11,094,614
- Issue date Aug 17, 2021
- Littelfuse, Inc.
- Stefan Steinhoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, comprising an insulated gate field effect tra...
- Patent number 11,031,480
- Issue date Jun 8, 2021
- K.Eklund Innovation
- Klas-Håkan Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage tolerant bi-directional electrostatic discharge protec...
- Patent number 11,031,778
- Issue date Jun 8, 2021
- Silicon Laboratories Inc.
- Jeremy C. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,991,815
- Issue date Apr 27, 2021
- Sanken Electric Co., Ltd.
- Shunsuke Fukunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and diode
- Patent number 10,978,580
- Issue date Apr 13, 2021
- Rohm Co., Ltd.
- Kohei Shinsho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an n-type carrier stored layer, powe...
- Patent number 10,916,631
- Issue date Feb 9, 2021
- Mitsubishi Electric Corporation
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC-SOI device and manufacturing method thereof
- Patent number 10,868,123
- Issue date Dec 15, 2020
- Mitsubishi Electric Corporation
- Hajime Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure-based vacuum channel transistor
- Patent number 10,727,325
- Issue date Jul 28, 2020
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Jin-Woo Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor wafer including a porous lay...
- Patent number 10,714,377
- Issue date Jul 14, 2020
- Infineon Technologies AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed superjunction lateral insulated gate bipolar transistor
- Patent number 10,658,496
- Issue date May 19, 2020
- Chongqing University
- Zhi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and diode
- Patent number 10,658,499
- Issue date May 19, 2020
- Rohm Co., Ltd.
- Kohei Shinsho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing semiconductor device...
- Patent number 10,505,027
- Issue date Dec 10, 2019
- Mitsubishi Electric Corporation
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency isolation for SOI transistors
- Patent number 10,453,928
- Issue date Oct 22, 2019
- Skyworks Solutions, Inc.
- Raymond A. Kjar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR MANUFACTURING METHOD
- Publication number 20240332406
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290874
- Publication date Aug 29, 2024
- Kabushiki Kaisha Toshiba
- Kazushi MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING LATERAL INSULATED-GATE BIPOLAR TRANSISTOR
- Publication number 20240222478
- Publication date Jul 4, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Sen ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
- Publication number 20240072178
- Publication date Feb 29, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230178639
- Publication date Jun 8, 2023
- RENESAS ELECTRONICS CORPORATION
- Tomohiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230085921
- Publication date Mar 23, 2023
- Kabushiki Kaisha Toshiba
- Kenichi MATSUSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL HOMOGENIZATION FIELD HIGH VOLTAGE POWER SEMICONDUCTOR D...
- Publication number 20230053369
- Publication date Feb 23, 2023
- University of Electronic Science and Technology of China
- Wentong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED CHIP AND PREPARATION METHOD
- Publication number 20220416063
- Publication date Dec 29, 2022
- Huawei Technologies Co., Ltd
- Wentao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND DIODE
- Publication number 20220384626
- Publication date Dec 1, 2022
- ROHM CO., LTD.
- Kohei SHINSHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR AND METHOD
- Publication number 20220376093
- Publication date Nov 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20220376094
- Publication date Nov 24, 2022
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE AND SEMICONDUCTOR APPARATUS
- Publication number 20220328665
- Publication date Oct 13, 2022
- Fuji Electric Co., Ltd.
- Yushi SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DE...
- Publication number 20220223583
- Publication date Jul 14, 2022
- Mitsubishi Electric Corporation
- Kenji HAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR (BJT) STRUCTURE AND RELATED METHOD
- Publication number 20220173230
- Publication date Jun 2, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE BIPOLAR TRANSISTOR WITH LOW TURN-ON OVERSHOO...
- Publication number 20220157975
- Publication date May 19, 2022
- SOUTHEAST UNIVERSITY
- Jing ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220109061
- Publication date Apr 7, 2022
- Mitsubishi Electric Corporation
- Shinya SONEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
- Publication number 20210343861
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Fu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND DIODE
- Publication number 20210202726
- Publication date Jul 1, 2021
- ROHM CO., LTD.
- Kohei SHINSHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-GATED MEMTRANSISTOR CROSSBAR ARRAY, FABRICATING METHODS AND AP...
- Publication number 20210098611
- Publication date Apr 1, 2021
- Northwestern University
- Mark C. Hersam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR CHIP CONTACT STRUCTURE, DEVICE ASSEMBLY, AND METHOD O...
- Publication number 20210090972
- Publication date Mar 25, 2021
- LITTELFUSE, INC.
- Stefan Steinhoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, COMPRISING AN INSULATED GATE FIELD EFFECT TRA...
- Publication number 20210083066
- Publication date Mar 18, 2021
- K.EKLUND INNOVATION
- Klas-Håkan EKLUND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER STORAGE ENHANCED SUPERJUNCTION IGBT
- Publication number 20210057554
- Publication date Feb 25, 2021
- Sichuan University
- Mingmin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIMOS TRANSISTOR
- Publication number 20200357902
- Publication date Nov 12, 2020
- STMicroelectronics S.A.
- Philippe GALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate bipolar transistor and diode
- Publication number 20200243673
- Publication date Jul 30, 2020
- ROHM CO., LTD.
- Kohei SHINSHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200212190
- Publication date Jul 2, 2020
- RENESAS ELECTRONICS CORPORATION
- Nobue MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20200194543
- Publication date Jun 18, 2020
- Vanguard International Semiconductor Corporation
- Ankit KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Tolerant Bi-Directional Electrostatic Discharge Protec...
- Publication number 20200169079
- Publication date May 28, 2020
- Silicon Laboratories Inc.
- Jeremy C. Smith
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
A SEMICONDUCTOR DEVICE WITH A LOCOS TRENCH
- Publication number 20200091328
- Publication date Mar 19, 2020
- Dynex Semiconductor Limited
- Luther-King NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200058778
- Publication date Feb 20, 2020
- Sanken Electric Co., Ltd.
- Shunsuke FUKUNAGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20200044065
- Publication date Feb 6, 2020
- Mitsubishi Electric Corporation
- Tetsuo TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS

on an insulating layer or substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Insulated gate bipolar transistor

Semiconductor arrangement and method of making

IGBT with anti-parallelly connected FWD on a common substrate

SOI lateral homogenization field high voltage power semiconductor d...

Bipolar junction transistor (BJT) structure and related method

Lateral bipolar junction transistor and method

Semiconductor device

Carrier storage enhanced superjunction IGBT

Insulated gate bipolar transistor and diode

BiMOS transistor

Lateral insulated gate bipolar transistor with low turn-on overshoo...

Semiconductor devices and methods for fabricating the same

Metal-insulator-metal (MIM) capacitor

Semiconductor module and power conversion apparatus

Semiconductor device with a LOCOS trench

Semiconductor device, method of manufacturing semiconductor device,...

Semiconductor device and method of manufacturing the same

Semiconductor chip contact structure, device assembly, and method o...

Semiconductor device, comprising an insulated gate field effect tra...

High-voltage tolerant bi-directional electrostatic discharge protec...

Semiconductor device

Insulated gate bipolar transistor and diode

Semiconductor device including an n-type carrier stored layer, powe...

SiC-SOI device and manufacturing method thereof

Nanostructure-based vacuum channel transistor

Semiconductor device and semiconductor wafer including a porous lay...

High-speed superjunction lateral insulated gate bipolar transistor

Insulated gate bipolar transistor and diode

Semiconductor device, method of manufacturing semiconductor device...

Radio frequency isolation for SOI transistors

Patents Applicationslast 30 patents

TRANSISTOR MANUFACTURING METHOD

SEMICONDUCTOR DEVICE

REVERSE CONDUCTING LATERAL INSULATED-GATE BIPOLAR TRANSISTOR

DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SOI LATERAL HOMOGENIZATION FIELD HIGH VOLTAGE POWER SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE AND RELATED CHIP AND PREPARATION METHOD

INSULATED GATE BIPOLAR TRANSISTOR AND DIODE

LATERAL BIPOLAR JUNCTION TRANSISTOR AND METHOD

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR MODULE AND SEMICONDUCTOR APPARATUS

SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DE...

BIPOLAR JUNCTION TRANSISTOR (BJT) STRUCTURE AND RELATED METHOD

LATERAL INSULATED GATE BIPOLAR TRANSISTOR WITH LOW TURN-ON OVERSHOO...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING

INSULATED GATE BIPOLAR TRANSISTOR AND DIODE

DUAL-GATED MEMTRANSISTOR CROSSBAR ARRAY, FABRICATING METHODS AND AP...

SEMICONDUCTOR CHIP CONTACT STRUCTURE, DEVICE ASSEMBLY, AND METHOD O...

SEMICONDUCTOR DEVICE, COMPRISING AN INSULATED GATE FIELD EFFECT TRA...

CARRIER STORAGE ENHANCED SUPERJUNCTION IGBT

BIMOS TRANSISTOR

Insulated gate bipolar transistor and diode

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

High-Voltage Tolerant Bi-Directional Electrostatic Discharge Protec...

A SEMICONDUCTOR DEVICE WITH A LOCOS TRENCH

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...